Patents by Inventor Shinichi Arakawa
Shinichi Arakawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230396895Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.Type: ApplicationFiled: August 23, 2023Publication date: December 7, 2023Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Takeshi YANAGITA, Masaaki TAKIZAWA, Yuuji NISHIMURA, Shinichi ARAKAWA, Yuugo NAKAMURA, Yohei CHIBA
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Patent number: 11778349Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.Type: GrantFiled: June 14, 2022Date of Patent: October 3, 2023Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Takeshi Yanagita, Masaaki Takizawa, Yuuji Nishimura, Shinichi Arakawa, Yuugo Nakamura, Yohei Chiba
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Patent number: 11470276Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.Type: GrantFiled: June 30, 2021Date of Patent: October 11, 2022Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Takeshi Yanagita, Masaaki Takizawa, Yuuji Nishimura, Shinichi Arakawa, Yuugo Nakamura, Yohei Chiba
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Publication number: 20220311964Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.Type: ApplicationFiled: June 14, 2022Publication date: September 29, 2022Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Takeshi YANAGITA, Masaaki TAKIZAWA, Yuuji NISHIMURA, Shinichi ARAKAWA, Yuugo NAKAMURA, Yohei CHIBA
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Patent number: 11329002Abstract: Fabrication of an alignment mark in a semiconductor device is simplified. A semiconductor device including a semiconductor substrate, an epitaxial layer, and an alignment mark is provided. The epitaxial layer included in the semiconductor device includes a single-crystalline semiconductor that is epitaxially grown on a surface of the semiconductor substrate included in the semiconductor device. The alignment mark included in the semiconductor device is disposed between the semiconductor substrate and the epitaxial layer.Type: GrantFiled: July 24, 2018Date of Patent: May 10, 2022Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Teruyuki Sato, Shinichi Arakawa, Takayuki Enomoto, Yohei Chiba
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Publication number: 20220102469Abstract: A display device includes: a first substrate that includes a semiconductor material layer in which a transistor has been formed, the transistor driving a light-emitting part that is included in a pixel; and a second substrate that includes a predetermined circuit. The first substrate and the second substrate are stuck together in such a way that respective joint surfaces face each other. A pad opening is provided from a side of the first substrate to face a pad electrode that has been provided on a side of the respective joint surfaces, in such a way that the pad electrode is exposed on a bottom surface.Type: ApplicationFiled: January 28, 2020Publication date: March 31, 2022Inventor: SHINICHI ARAKAWA
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Patent number: 11252356Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.Type: GrantFiled: June 17, 2020Date of Patent: February 15, 2022Assignee: Sony Semiconductor Solutions CorporationInventors: Takeshi Yanagita, Masaaki Takizawa, Yuuji Nishimura, Shinichi Arakawa, Yuugo Nakamura, Yohei Chiba
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Publication number: 20220006040Abstract: Provided is a display device in which pixels each configured by layering a first electrode, an organic layer, and a second electrode are formed in a two-dimensional matrix arrangement on a substrate; the first electrode is arranged for each pixel and includes a conductive light reflecting film formed on an insulating layer provided on the substrate, and a transparent electrode formed on the light reflecting film; vias conductive with the light reflecting films are formed in portions of the insulating layer positioned under the light reflecting films; and a voltage is applied to the first electrodes through the vias.Type: ApplicationFiled: November 6, 2019Publication date: January 6, 2022Inventor: Shinichi Arakawa
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Publication number: 20210329183Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.Type: ApplicationFiled: June 30, 2021Publication date: October 21, 2021Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Takeshi YANAGITA, Masaaki TAKIZAWA, Yuuji NISHIMURA, Shinichi ARAKAWA, Yuugo NAKAMURA, Yohei CHIBA
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Publication number: 20200314371Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.Type: ApplicationFiled: June 17, 2020Publication date: October 1, 2020Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Takeshi YANAGITA, Masaaki TAKIZAWA, Yuuji NISHIMURA, Shinichi ARAKAWA, Yuugo NAKAMURA, Yohei CHIBA
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Publication number: 20200303317Abstract: Fabrication of an alignment mark in a semiconductor device is simplified. A semiconductor device including a semiconductor substrate, an epitaxial layer, and an alignment mark is provided. The epitaxial layer included in the semiconductor device includes a single-crystalline semiconductor that is epitaxially grown on a surface of the semiconductor substrate included in the semiconductor device. The alignment mark included in the semiconductor device is disposed between the semiconductor substrate and the epitaxial layer.Type: ApplicationFiled: July 24, 2018Publication date: September 24, 2020Inventors: TERUYUKI SATO, SHINICHI ARAKAWA, TAKAYUKI ENOMOTO, YOHEI CHIBA
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Patent number: 10777594Abstract: In a global shutter system back-illuminated CMOS image sensor, optical noise is reduced to enhance image quality. A solid-state imaging element is provided that includes: a semiconductor substrate; a photoelectric conversion unit; a charge holding unit; a first penetrating light-shielding film that partitions the photoelectric conversion unit and the charge holding unit from each other; a first bypass part containing a semiconductor material on an outer front surface of the semiconductor substrate; and a control unit that controls charge transfer from the photoelectric conversion unit to the charge holding unit via the first bypass part. A front-side end portion of the first penetrating light-shielding film has, in a thickness direction of the semiconductor substrate, an approximately same length as a front-side end of the charge holding unit or has a longer length than in the front-side end of the charge holding unit in a front side direction.Type: GrantFiled: November 9, 2017Date of Patent: September 15, 2020Assignee: Sony Semiconductor Solutions CorporationInventor: Shinichi Arakawa
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Patent number: 10728475Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.Type: GrantFiled: May 26, 2016Date of Patent: July 28, 2020Assignee: Sony Semiconductor Solutions CorporationInventors: Takeshi Yanagita, Masaaki Takizawa, Yuuji Nishimura, Shinichi Arakawa, Yuugo Nakamura, Yohei Chiba
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Patent number: 10721422Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.Type: GrantFiled: May 2, 2019Date of Patent: July 21, 2020Assignee: Sony Semiconductor Solutions CorporationInventors: Takeshi Yanagita, Masaaki Takizawa, Yuuji Nishimura, Shinichi Arakawa, Yuugo Nakamura, Yohei Chiba
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Publication number: 20190371846Abstract: In a global shutter system back-illuminated CMOS image sensor, optical noise is reduced to enhance image quality. A solid-state imaging element is provided that includes: a semiconductor substrate; a photoelectric conversion unit; a charge holding unit; a first penetrating light-shielding film that partitions the photoelectric conversion unit and the charge holding unit from each other; a first bypass part containing a semiconductor material on an outer front surface of the semiconductor substrate; and a control unit that controls charge transfer from the photoelectric conversion unit to the charge holding unit via the first bypass part. A front-side end portion of the first penetrating light-shielding film has, in a thickness direction of the semiconductor substrate, an approximately same length as a front-side end of the charge holding unit or has a longer length than in the front-side end of the charge holding unit in a front side direction.Type: ApplicationFiled: November 9, 2017Publication date: December 5, 2019Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventor: Shinichi ARAKAWA
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Publication number: 20190260950Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.Type: ApplicationFiled: May 2, 2019Publication date: August 22, 2019Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Takeshi YANAGITA, Masaaki TAKIZAWA, Yuuji NISHIMURA, Shinichi ARAKAWA, Yuugo NAKAMURA, Yohei CHIBA
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Patent number: 10341592Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.Type: GrantFiled: December 20, 2017Date of Patent: July 2, 2019Assignee: Sony Semiconductor Solutions CorporationInventors: Takeshi Yanagita, Masaaki Takizawa, Yuuji Nishimura, Shinichi Arakawa, Yuugo Nakamura, Yohei Chiba
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Patent number: 10276623Abstract: Disclosed herein is a solid-state image pickup device including: a photoelectric conversion section configured to convert incident light into a signal charge; a transfer transistor configured to read the signal charge from the photoelectric conversion section and transfer the signal charge; and an amplifying transistor configured to amplify the signal charge read by the transfer transistor, wherein a compressive stress film having a compressive stress is formed on the amplifying transistor.Type: GrantFiled: May 13, 2016Date of Patent: April 30, 2019Assignee: SONY CORPORATIONInventor: Shinichi Arakawa
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Publication number: 20180184025Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.Type: ApplicationFiled: May 26, 2016Publication date: June 28, 2018Inventors: Takeshi YANAGITA, Masaaki TAKIZAWA, Yuuji NISHIMURA, Shinichi ARAKAWA, Yuugo NAKAMURA, Yohei CHIBA
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Publication number: 20180115727Abstract: A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.Type: ApplicationFiled: December 20, 2017Publication date: April 26, 2018Inventors: Takeshi YANAGITA, Masaaki TAKIZAWA, Yuuji NISHIMURA, Shinichi ARAKAWA, Yuugo NAKAMURA, Yohei CHIBA