Abstract: Disclosed herein is a solid-state image pickup device including: a photoelectric conversion section configured to convert incident light into a signal charge; a transfer transistor configured to read the signal charge from the photoelectric conversion section and transfer the signal charge; and an amplifying transistor configured to amplify the signal charge read by the transfer transistor, wherein a compressive stress film having a compressive stress is formed on the amplifying transistor.

Abstract: A semiconductor device including a substrate, a metal wiring on the substrate, an insulation film on the substrate covering the metal wiring, a connection hole in the insulation film which extends to a portion of the metal wiring, a via in the connection hole, and an alloy layer. The metal wiring includes a first metallic material, the alloy layer comprises a portion of the metal wiring and a second metallic material which is different than the first metallic material, and the via extends to the alloy layer.

Abstract: A method of manufacturing a semiconductor device, comprising a first step of forming a layer insulation film on a lower layer wiring provided on a substrate and forming a connection hole in the layer insulation film, a second step of forming an alloy layer composed of a first metallic material constituting the lower layer wiring and a second metallic material different from the first metallic material, on the surface side of the lower layer wiring in the region to be a bottom portion of the connection hole, a third step of sputter-etching the alloy layer, and a fourth step of forming a via in the connection hole in the state of reaching the lower layer wiring; and the semiconductor device.

Abstract: This invention discloses a semiconductor device including an insulating film having a recess therein; an electric conductor formed inside the recess; a manganese silicate film formed on an upper surface of the conductor, the manganese silicate film being formed of a reaction product of a manganese with a silicon oxide insulating film. A method for manufacturing such a semiconductor device is also described.

Abstract: A method for manufacturing a semiconductor device, the method including: the first step of forming an insulating film over a substrate of which surface side has a first conductive layer, and forming a recess in the insulating film by dry etching; the second step of carrying out plasma treatment for the insulating film with use of a gas that contains carbon or silicon; and the third step of forming a second conductive layer buried in the recess for which the plasma treatment has been carried out.

Abstract: A method of manufacturing a semiconductor device includes the steps of: forming recesses (a via hole and wiring grooves) in a insulation film; forming a seal layer on inside surfaces of the recesses by using a gas based on a silane having an alkyl group as a precursor; applying EB-cure or UV-cure to the seal layer; and filling up the recesses with a conductor.

Abstract: A method of manufacturing a semiconductor device, comprising a first step of forming a layer insulation film on a lower layer wiring provided on a substrate and forming a connection hole in the layer insulation film, a second step of forming an alloy layer composed of a first metallic material constituting the lower layer wiring and a second metallic material different from the first metallic material, on the surface side of the lower layer wiring in the region to be a bottom portion of the connection hole, a third step of sputter-etching the alloy layer, and a fourth step of forming a via in the connection hole in the state of reaching the lower layer wiring; and the semiconductor device.

Abstract: A power supply system includes a photovoltaic generator, a load to which electric power is supplied from the photovoltaic generator, an electrical system for receiving a portion of the electric power generated by the photovoltaic generator and supplying electric power to the load, and a control unit for controlling the reception and the supply of the electrical power by the electrical system. To ensure that the photovoltaic generator generates electric power at an optimal operational point, the control unit is adapted to not operate when the maximum electric power Pmax generated by the photovoltaic generator and an electric power PL consumed in the load are equal to each other, and to be operated when Pmax>PL, thereby permitting the electrical system to receive a surplus electric power &Dgr;P1, and to be operated when Pmax<PL, thereby supplying a deficient electric power &Dgr;P2 from the electrical system to the load.

Abstract: A power supply system includes a photovoltaic generator, a load to which electric power is supplied from the photovoltaic generator, an electrical system for receiving a portion of the electric power generated by the photovoltaic generator and supplying electric power to the load, and a control unit for controlling the reception and the supply of the electrical power by the electrical system. To ensure that the photovoltaic generator generates electric power at an optimal operational point, the control unit is adapted to not operate when the maximum electric power Pmax generated by the photovoltaic generator and an electric power PL consumed in the load are equal to each other, and to be operated when Pmax>PL, thereby permitting the electrical system to receive a surplus electric power &Dgr;P1, and to be operated when Pmax<PL, thereby supplying a deficient electric power &Dgr;P2 from the electrical system to the load.

Abstract: A process for producing methyl tertiary butyl ether is disclosed, comprising reacting isobutylene and methanol using a hydrocarbon mixture of 4 carbon atoms containing isobutylene and methanol as starting materials in a reaction zone containing an acidic ion exchange resin and distilling the resulting reaction mixture in a distillation column connected to the reaction zone to separate methyl tertiary butyl ether from the unreacted hydrocarbon mixture of 4 carbon atoms, wherein a mixture of the hydrocarbon mixture of 4 carbon atoms as a distillate from a top of the distillation column and methanol as a distillate by azeotropy is contacted with water in a second extraction step to wash and extract methanol with water, and the water containing the extracted methanol is then contacted with said hdyrocarbon mixture of 4 carbon atoms containing isobutylene which is fed to the reaction zone in a first extraction step in an upstream of the reaction zone to thereby transfer a part or a large portion of the methanol in