Abstract: A photomask is manufactured from a photomask blank comprising a transparent substrate and a light-shielding film consisting of upper and lower layers of transition metal-containing silicon base materials, the content of O+N in the upper layer being higher than that of the lower layer. The light-shielding film is processed in two steps by fluorine dry etching through a resist pattern such that a lower portion of the film is left behind, and oxygen-containing chlorine dry etching for removing the remainder of the film.

Abstract: A photomask is manufactured by providing a photomask blank comprising a transparent substrate, a phase shift film, and a light-shielding film, the phase shift film and the light-shielding film including silicon base material layers, a N+O content in the silicon base material layer of the phase shift film differing from that of the light-shielding film, and chlorine dry etching the blank with oxygen-containing chlorine gas in a selected O/Cl ratio for selectively etching away the silicon base material layer of the light-shielding film.

Abstract: A photomask is manufactured from a photomask blank comprising a transparent substrate and a light-shielding film consisting of upper and lower layers of transition metal-containing silicon base materials, the content of O+N in the upper layer being higher than that of the lower layer. The light-shielding film is processed in two steps by fluorine dry etching through a resist pattern such that a lower portion of the film is left behind, and oxygen-containing chlorine dry etching for removing the remainder of the film.

Abstract: Disclosed herein is a dry etching method for a work layer formed over a substrate, including the steps of forming a hard mask layer over the work layer formed over the substrate, forming a resist pattern over the hard mask layer, transferring the resist pattern to the hard mask layer by first dry etching conducted using the resist pattern, and patterning the work layer by second dry etching conducted using a hard mask pattern obtained upon the transfer to the hard mask layer, wherein after the hard mask layer is patterned by the first dry etching, the patterning of the work layer by the second dry etching is conducted through changing the concentration of an auxiliary ingredient of a dry etching gas, without changing a main ingredient of the dry etching gas, in an etching apparatus in which the first dry etching has been conducted.

Abstract: A photomask blank is provided comprising a transparent substrate, a single or multi-layer film including an outermost layer composed of chromium base material, and an etching mask film. The etching mask film is a silicon oxide base material film formed of a composition comprising a hydrolytic condensate of a hydrolyzable silane, a crosslink promoter, and an organic solvent and having a thickness of 1-10 nm. The etching mask film has high resistance to chlorine dry etching, ensuring high-accuracy processing of the photomask blank.

Abstract: A photomask is manufactured by providing a photomask blank comprising a transparent substrate, a phase shift film, and a light-shielding film, the phase shift film and the light-shielding film including silicon base material layers, a N+O content in the silicon base material layer of the phase shift film differing from that of the light-shielding film, and chlorine dry etching the blank with oxygen-containing chlorine gas in a selected O/C1 ratio for selectively etching away the silicon base material layer of the light-shielding film.

Abstract: A novel two-dimensional patterning method enabling two-dimension patterning without using any photosensitive material and ion milling, wherein a two-dimensional pattern is formed by destroying a blister provided on a substrate by electron or ion irradiation.

Abstract: A novel two-dimensional patterning method enabling two-dimension patterning without using any photosensitive material and ion milling, wherein a two-dimensional pattern is formed by destroying a blister provided on a substrate by electron or ion irradiation.

Abstract: Iodopropargylamine compound of the general formula (1): ##STR1## wherein R.sup.1 and R.sup.2 each independently represent a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, or R.sup.1 and R.sup.2 combine with each other to form a tetramethylene group or a pentamethylene group, R.sup.3 represents a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, and X and Y each independently represent a cyano group, an alkoxycarbonyl group having 2 to 7 carbon atoms, an alkylcarbonyl group having 2 to 7 carbon atoms, an alkylsulfonyl group having 1 to 6 carbon atoms, a phenylcarbonyl group or a phenylsulfonyl group, provided that the phenyl group of a phenylcarbonyl group or a phenylsulfonyl group may be optionally substituted by halogen atoms, alkyl groups having 1 to 3 carbon atoms, alkoxy groups having 1 to 3 carbon atoms, nitro groups or trifluoromethyl groups.

Abstract: A controlled release composition comprising a volatile compound such as allyl isothiocyanate and a rosin in a proportion of 0.1 to 100 parts by weight of the compound per 100 parts by weight of the rosin, the controlled release composition further comprising a plasticizer, and the controlled release composition laminated on a substrate or in other forms. The AIT controlled release composition of the present invention can be used for emission of aroma, antimicrobial effect, antibacterial effect, insecticidal action, insectproof effect, fungicidal action, fungiproof action, freshness retention, antiseptic or preservative effect and the like.

Abstract: For use in generating a schematic diagram in compliance with logic connection informating specifying symbol tags indicative of individual symbols, pin names of the symbols, symbol classifiers for classifying the symbols into a plurality of classes, and signal names corresponding to the pin names, a computer aided design system comprises a group and set determining unit and a signal bundle name determining arrangement. The unit is intermittently used in determining identifier groups, each consisting of the symbol tags indicative of the symbols classified into one of the classes and the signal names corresponding to the pin names of the symbols. The arrangement determines signal bundle names, each in connection with the signal names included in most of the identifier groups and with only one signal name included in other identifier group or groups.

Abstract: An injection timing control device in a distributor-type fuel injection pump for an internal combustion engine having a filter arranged in the exhaust passage for trapping exhaust gas fine particles, and a sensor for detecting exhaust pressure upstream of the filter. A timer spring and a second spring having a smaller force than that of the timer spring are accommodated within a spring chamber at one end of a timer piston. While the timer piston is displaced from its initial position to a predetermined position in the injection timing advancing direction by pressure within a hydraulic pressure chamber at the other end of the timer piston, the second spring alone counteracts the displacement of the timer piston. When the timer piston is further displaced beyond the predetermined position in the injection timing advancing direction, at least the timer spring counteracts the displacement of the timer piston.