Patents by Inventor Shinichi Ike
Shinichi Ike has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12152304Abstract: A film forming method for forming an object film on a substrate including: providing the substrate including an oxide layer of a first material formed on a layer of the first material formed on a surface of a first area, and a layer of a second material formed on a surface of a second area, the second material being different from the first material; reducing the oxide layer; oxidizing a surface of the layer of the first material after reducing the oxide layer; and forming a self-assembled monolayer on the surface of the layer of the first material by supplying a raw material gas of the self-assembled monolayer after oxidizing the surface of the layer of the first material.Type: GrantFiled: September 22, 2020Date of Patent: November 26, 2024Assignee: TOKYO ELECTRON LIMITEDInventors: Shuji Azumo, Shinichi Ike, Yumiko Kawano
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Publication number: 20240263306Abstract: A film forming method includes: (A) preparing a substrate with a surface having a first region where a first film is exposed, and a second region where a second film formed by a material different from the first film is exposed; (B) forming a stepped portion in the surface such that the first region becomes higher than the second region; (C) supplying a liquid to the surface where the stepped portion is formed; and (D) supplying, to the surface, a processing gas that chemically changes the liquid, and moving the liquid from the second region to the first region by a reaction between the processing gas and the liquid to selectively form a film in the first region with respect to the second region.Type: ApplicationFiled: May 25, 2022Publication date: August 8, 2024Inventors: Shuji AZUMO, Sena FUJITA, Tadashi MITSUNARI, Yumiko KAWANO, Shinichi IKE
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Publication number: 20240150895Abstract: A film forming method includes: a preparation process of preparing a substrate having a surface from which a first film without containing silicon and a second film are exposed; a first film formation process of forming a self-assembled monolayer, which has a fluorine-containing functional group and inhibits formation of a third film containing silicon, on the first film; a second film formation process of forming the third film on the second film; a modification process of decomposing the self-assembled monolayer by plasma using a gas containing hydrogen and nitrogen while maintaining a temperature of the substrate to be 70 degrees C. or lower, so that a side portion of the third film, which is formed in a vicinity of the self-assembled monolayer, is modified into ammonium fluorosilicate by active species contained in the decomposed self-assembled monolayer; and a removal process of removing the ammonium fluorosilicate.Type: ApplicationFiled: February 24, 2022Publication date: May 9, 2024Inventors: Shuji AZUMO, Shinichi IKE, Yumiko KAWANO, Hiroki MURAKAMI
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Publication number: 20240030025Abstract: A film formation method of selectively forming a film on a substrate includes: a preparation process of preparing the substrate having a first film and a second film exposed on a surface thereof; a first film formation process of forming a self-assembled monolayer on the first film by supplying, onto the substrate, a compound for forming the self-assembled monolayer that has a functional group not containing fluorine and containing an alkyl group and prevents formation of a third film; a second film formation process of forming the third film on the second film; and a first removal process of removing the third film formed in a vicinity of the self-assembled monolayer by applying energy to the surface, wherein the third film is a film that is more likely than the first film to combine with hydrogen and carbon contained in the self-assembled monolayer to form a volatile compound.Type: ApplicationFiled: November 25, 2021Publication date: January 25, 2024Inventors: Shinichi IKE, Shuji AZUMO, Yumiko KAWANO
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Patent number: 11830741Abstract: A method of selectively forming a film on a substrate includes: a preparation process of preparing a substrate having a surface to which a metal film and an insulating film are exposed; a first removal process of removing a natural oxide film on the metal film; a first film forming process of forming a self-assembled monolayer, which suppresses formation of a titanium nitride film, on the insulating film by providing the substrate with a compound for forming the self-assembled monolayer, the compound having a functional group containing fluorine and carbon; a second film forming process of forming a titanium nitride film on the metal film; an oxidation process of oxidizing the surface of the substrate; and a second removal process of removing a titanium oxide film, which is formed on the metal film and the self-assembled monolayer, by providing the surface of the substrate with the compound.Type: GrantFiled: February 28, 2020Date of Patent: November 28, 2023Assignee: Tokyo Electron LimitedInventors: Shinichi Ike, Shuji Azumo, Yumiko Kawano, Hiroki Murakami
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Publication number: 20230369041Abstract: A film formation method includes (A) to (C) below: (A) preparing a substrate including, on a surface of the substrate, a first region from which an insulating film is exposed and a second region from which a metal film is exposed; (B) forming a self-assembled monolayer in the second region by supplying an organic compound containing a nitro group, which is a raw material of the self-assembled monolayer, in a head group to the surface of the substrate, and selectively adsorbing the organic compound to the second region among the first region and the second region; and (C) forming a second insulating film in the first region by supplying a raw material gas as a raw material of the second insulating film to the surface of the substrate while formation of the second insulating film in the second region is inhibited by the self-assembled monolayer.Type: ApplicationFiled: September 6, 2021Publication date: November 16, 2023Inventors: Zeyuan NI, Yumiko KAWANO, Shuji AZUMO, Taiki KATO, Shinichi IKE
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Patent number: 11788185Abstract: A film formation method includes: providing a substrate including a first region in which a first material is exposed and a second region in which a second material different from the first material is exposed; forming an intermediate film selectively in the second region from the first region and the second region by supplying a processing gas to the substrate; forming a self-assembled monolayer in the first region and the second region after forming the intermediate film; removing the intermediate film and the self-assembled monolayer from the second region by heating the substrate to sublimate the intermediate film; and forming, after sublimation of the intermediate film, a target film selectively in the second region from the first region and the second region in a state in which the self-assembled monolayer is left in the first region.Type: GrantFiled: March 3, 2020Date of Patent: October 17, 2023Assignee: Tokyo Electron LimitedInventors: Shuji Azumo, Shinichi Ike, Yumiko Kawano
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Publication number: 20230148162Abstract: The present disclosure provides a technique capable of controlling a shape of an SAM. Provided is a method of forming a target film on a substrate, wherein the method includes preparing a substrate including a layer of a first conductive material formed on a surface of a first region, and a layer of an insulating material formed on a surface of a second region; forming carbon nanotubes on a surface of the layer of the first conductive material; and supplying a raw material gas for a self-assembled film to form the self-assembled film in a region of the surface of the layer of the first conductive material in which the carbon nanotubes have not been formed.Type: ApplicationFiled: September 16, 2020Publication date: May 11, 2023Inventors: Shuji AZUMO, Masahito SUGIURA, Takashi MATSUMOTO, Yumiko KAWANO, Shinichi IKE, Kenji OUCHI
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Patent number: 11598001Abstract: A film forming method includes: preparing a substrate having a metal layer formed on a surface of a first region and an insulating layer formed on a surface of a second region, wherein the metal layer is formed of a first metal; forming a self-assembled film on a surface of the metal layer by supplying a source gas of the self-assembled film; after forming the self-assembled film, forming an oxide film of a second metal on the insulating layer through an atomic layer deposition method by repeating a supply of a precursor gas containing the second metal and a supply of an oxidizing gas; and reducing an oxide film of the first metal formed on a surface of the first metal by supplying a reducing gas after the supply of the oxidizing gas and before the supply of the precursor gas.Type: GrantFiled: February 3, 2021Date of Patent: March 7, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Shuji Azumo, Shinichi Ike, Yumiko Kawano
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Publication number: 20230037372Abstract: A film formation method includes (A) to (C) below. (A) Providing a substrate including, on a surface of the substrate, a first region in which a first material is exposed and a second region in which a second material different from the first material is exposed. (B) Supplying, to the surface of the substrate, vapor of a solution that contains a raw material of a self-assembled monolayer and a solvent by which the raw material is dissolved, and selectively forming a self-assembled monolayer in the first region. (C) Forming a desired target film in the second region by using the self-assembled monolayer formed in the first region.Type: ApplicationFiled: December 21, 2020Publication date: February 9, 2023Inventors: Yumiko KAWANO, Shuji AZUMO, Shinichi IKE
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Publication number: 20230009551Abstract: A film formation method includes: preparing a substrate including, on its surface, a first region in which a first material is exposed and a second region in which a second material different from the first material is exposed; selectively forming a self-assembled monolayer in the first region, among the first region and the second region; and forming a desired target film in the second region, among the first region and the second region, by using the self-assembled monolayer formed in the first region, wherein the selectively forming the self-assembled monolayer includes: selectively forming the self-assembled monolayer in the first region by using a first processing liquid including a first raw material of the self-assembled monolayer; and modifying the self-assembled monolayer, by using a second processing liquid including a second raw material of the self-assembled monolayer at a concentration different from a concentration of the first processing liquid.Type: ApplicationFiled: December 14, 2020Publication date: January 12, 2023Inventors: Yumiko KAWANO, Shinichi IKE, Shuji AZUMO
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Publication number: 20220341033Abstract: The film-forming method of forming a target film on a substrate includes preparing the substrate including a first material layer formed on a surface of a first region, and including a second material layer, which is different from the first material, formed on a surface of a second region; controlling the temperature of the substrate to a first temperature; forming the self-assembled film on a surface of the first material layer at the first temperature by supplying a raw-material gas for a self-assembled film; controlling the temperature of the substrate to a second temperature higher than the first temperature; and further forming a self-assembled film at the second temperature on the first material layer on which the self-assembled film has been formed at the first temperature by supplying the raw-material gas for the self-assembled film.Type: ApplicationFiled: September 16, 2020Publication date: October 27, 2022Inventors: Shinichi IKE, Shuji AZUMO, Yumiko KAWANO, Tsutomu HIROKI
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Publication number: 20220336205Abstract: A film formation method for selectively forming a film on a substrate includes: a preparation step of preparing a substrate having a surface on which a first film and a second film are exposed; a first film forming step of supplying a compound for forming a self-assembled monolayer onto the substrate to form the self-assembled monolayer on the first film, the compound having a functional group including fluorine and carbon and suppressing formation of a third film; a second film forming step of forming the third film on the second film; and a first removal step of removing the third film formed in a vicinity of the self-assembled monolayer by irradiating the surface of the substrate with ions or active species, wherein the third film is a film which forms a volatile compound more easily than the first film by being bonded to fluorine and carbon in the self-assembled monolayer.Type: ApplicationFiled: August 24, 2020Publication date: October 20, 2022Inventors: Kenji OUCHI, Shuji AZUMO, Yumiko KAWANO, Shinichi IKE
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Patent number: 11417514Abstract: There is provided a film forming method, including: forming a film containing silicon, carbon and nitrogen on a substrate in a first process; and oxidizing the film with an oxidizing agent containing a hydroxy group and subsequently supplying a nitriding gas to the substrate in a second process.Type: GrantFiled: March 11, 2020Date of Patent: August 16, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Yuichiro Wagatsuma, Toyohiro Kamada, Shinichi Ike, Shuji Azumo
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Publication number: 20220189778Abstract: A method of selectively forming a film on a substrate includes: a preparation process of preparing a substrate having a surface to which a metal film and an insulating film are exposed; a first removal process of removing a natural oxide film on the metal film; a first film forming process of forming a self-assembled monolayer, which suppresses formation of a titanium nitride film, on the insulating film by providing the substrate with a compound for forming the self-assembled monolayer, the compound having a functional group containing fluorine and carbon; a second film forming process of forming a titanium nitride film on the metal film; an oxidation process of oxidizing the surface of the substrate; and a second removal process of removing a titanium oxide film, which is formed on the metal film and the self-assembled monolayer, by providing the surface of the substrate with the compound.Type: ApplicationFiled: February 28, 2020Publication date: June 16, 2022Inventors: Shinichi IKE, Shuji AZUMO, Yumiko KAWANO, Hiroki MURAKAMI
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Publication number: 20220186362Abstract: A film formation method includes: providing a substrate including a first region in which a first material is exposed and a second region in which a second material different from the first material is exposed; forming an intermediate film selectively in the second region from the first region and the second region by supplying a processing gas to the substrate; forming a self-assembled monolayer in the first region and the second region after forming the intermediate film; removing the intermediate film and the self-assembled monolayer from the second region by heating the substrate to sublimate the intermediate film; and forming, after sublimation of the intermediate film, a target film selectively in the second region from the first region and the second region in a state in which the self-assembled monolayer is left in the first region.Type: ApplicationFiled: March 3, 2020Publication date: June 16, 2022Inventors: Shuji AZUMO, Shinichi IKE, Yumiko KAWANO
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Publication number: 20220181144Abstract: There is provided a film formation method. The method comprises: preparing a substrate having a first region on which an oxide formed by oxidization of a surface of a conductive material is exposed and a second region on which an insulating material is exposed; replacing a film of the oxide with a film of boron oxide by supplying a boron halide gas to the substrate; etching the boron oxide film in the first region and forming a self-assembled monolayer film in the second region by supplying a gas of a fluorine-containing silane compound to the substrate; and forming a conductive target film selectively in the first region, from the first region and the second region, using the self-assembled monolayer film formed in the second region, the first region having the conductive material exposed thereon.Type: ApplicationFiled: March 12, 2020Publication date: June 9, 2022Inventors: Yumiko KAWANO, Shuji AZUMO, Shinichi IKE
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Publication number: 20210398846Abstract: A substrate processing method for area selective deposition. The method includes providing a substrate containing a metal film, a metal-containing liner, and a dielectric film, exposing the substrate to a plasma-excited cleaning gas containing 1) N2 gas and H2 gas, 2) N2 gas followed by H2 gas, or 3) H2 gas followed by N2 gas, forming a blocking layer on the metal film and on the metal-containing liner, and selectively depositing a material film on the dielectric film.Type: ApplicationFiled: June 11, 2021Publication date: December 23, 2021Inventors: Kandabara N. Tapily, Shuji Azumo, Yumiko Kawano, Shinichi Ike
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Publication number: 20210246547Abstract: A film forming method includes: preparing a substrate having a metal layer formed on a surface of a first region and an insulating layer formed on a surface of a second region, wherein the metal layer is formed of a first metal; forming a self-assembled film on a surface of the metal layer by supplying a source gas of the self-assembled film; after forming the self-assembled film, forming an oxide film of a second metal on the insulating layer through an atomic layer deposition method by repeating a supply of a precursor gas containing the second metal and a supply of an oxidizing gas; and reducing an oxide film of the first metal formed on a surface of the first metal by supplying a reducing gas after the supply of the oxidizing gas and before the supply of the precursor gas.Type: ApplicationFiled: February 3, 2021Publication date: August 12, 2021Inventors: Shuji AZUMO, Shinichi IKE, Yumiko KAWANO
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Publication number: 20210087691Abstract: A film forming method for forming an object film on a substrate including: providing the substrate including an oxide layer of a first material formed on a layer of the first material formed on a surface of a first area, and a layer of a second material formed on a surface of a second area, the second material being different from the first material; reducing the oxide layer; oxidizing a surface of the layer of the first material after reducing the oxide layer; and forming a self-assembled monolayer on the surface of the layer of the first material by supplying a raw material gas of the self-assembled monolayer after oxidizing the surface of the layer of the first material.Type: ApplicationFiled: September 22, 2020Publication date: March 25, 2021Inventors: Shuji AZUMO, Shinichi IKE, Yumiko KAWANO