Abstract: [PROBLEM] To enable confirmation of whether a substrate processing system is being illicitly used and preventing that use when there is the fact of illicit use. [MEANS FOR SOLUTION] A license file LF is a file encrypting license information L including usage terms of a substrate processing system for a specific user. A match confirmation program P2 confirms the match between the content of the license file LF decrypted by a decryption program P1 and device information DI, network information NI, and current time CT obtained from the substrate processing system to confirm the existence of the fact of illicit use. If there is illicit use, the control program P3 stops operation of the substrate processing system until predetermined action is taken based on the information from the match confirmation program P2.

Abstract: An information display method that enables for efficient analysis and evaluation of alignment results and thereby facilitating the setting of effective alignment conditions or parameters. The alignment information display method receives as input the data of the results of processing relating to alignment measurement, receives as input information relating to the parameters of the alignment measurement, finds the information for display from the data of the results of processing based on the input parameters, and displays the found desired information for display by a display mode by which the effects on the alignment measurement become clear. Therefore, in setting the desired conditions, it is possible to easily confirm the results of analysis by the set conditions, that is, the effects of the set conditions. Therefore, a user can easily detect the optimum alignment conditions and parameters.

Abstract: In a first process, a process A, an actually measured transfer position measured by a measurement/inspection instrument is indicated by a black circle. A targeted transfer position indicated by x in a process B is located at the same position as the black circle. Assuming that the weights in the subsequent processes are the same, a targeted transfer position Xtarget indicated by x in processes C, D and E is located at a moderate position with which the total deviation from an actual transfer position (black circle) measured by the measurement/inspection instrument in a process preceding the current process is minimized, that is, at a proper position with respect to a plurality of other processes. Accordingly, the productivity of devices can be improved.

Abstract: An exposure apparatus restricts reduction in throughput. The exposure apparatus controls movement such that, (1) when a substrate is moving in one direction, a first pattern is moved in a specified direction to expose a first shot region using a first exposure light, then movement of the substrate in the one direction continues while moving the second pattern in the specified direction to expose a second shot region, and (2) then the respective movement directions of the substrate and the second pattern are reversed to expose a third shot region using the second exposure light, then movement of the substrate in the reverse direction continues while moving the first pattern in a direction that is the reverse of the specified direction to expose a fourth shot region using the first exposure light.

Abstract: When a host issues an analysis order that specifically instructs the analytical contents to an analytical apparatus (step 401), the analytical apparatus collects two types of measurement and/or inspection results from a measurement and/or inspection instrument (steps 403 to 409), and in step 411, the analytical apparatus analyzes the measurement and/or inspection results and optimizes processing conditions of a series of processes related to wafer W. In step 411, data related to a processing state of a processing apparatus is acquired from the processing apparatus as needed. In step 413, the measurement and/or inspection results and the optimization results are accumulated in a database, and the optimization results are transmitted to various processing apparatuses (including the measurement and/or inspection instrument). After that, the analytical apparatus sends a processing end notice to the host (step 417).

Abstract: In the case where measurement/inspection of a wafer is performed in a measurement/inspection instrument before and after exposure is performed in an exposure apparatus, various kinds of conditions of the exposure apparatus and the measurement/inspection instrument are made to be matched. In particular, in accordance with a processing state of the exposure apparatus and a coater developer, a measurement result of a film, and the like, exclusion of a mark for overlay error measurement, adjustment of the measurement condition and correction of the measurement result, adjustment of the environment, correction of the measurement result according to the environment, and adjustment of pattern defect inspection are performed. Further, in calibration processing, aberration of a projection optical system of an exposure apparatus that transfers a pattern on a wafer for calibration, and the like are also taken into consideration. Accordingly, the yield of device production can be improved.

Abstract: When a host issues an analysis order that specifically instructs the analytical contents to an analytical apparatus (step 401), the analytical apparatus collects two types of measurement and/or inspection results from a measurement and/or inspection instrument (steps 403 to 409), and in step 411, the analytical apparatus analyzes the measurement and/or inspection results and optimizes processing conditions of a series of processes related to wafer W. In step 411, data related to a processing state of a processing apparatus is acquired from the processing apparatus as needed. In step 413, the measurement and/or inspection results and the optimization results are accumulated in a database, and the optimization results are transmitted to various processing apparatuses (including the measurement and/or inspection instrument). After that, the analytical apparatus sends a processing end notice to the host (step 417).

Abstract: A communication server connects together device manufacturing processing apparatuses such as exposure apparatuses and various inspection apparatuses and the like. This communication server is provided with a file format conversion section that converts the format of data exchanged between device manufacturing processing apparatuses, a communication message conversion section that converts communication messages, and a communication protocol conversion section that converts communication protocols. The communication server receives information transmitted from a transmission source compatibly with a device manufacturing processing apparatus which is the transmission source, and transmits the received information compatibly with a device manufacturing processing apparatus that is a destination of the transmission.

Abstract: By repeatedly executing a predetermined measurement at set intervals, data on a predetermined performance (a best focus position) of a predetermined apparatus and data on variation factors of the performance are obtained (Steps 204 to 214). Based on the obtained data, multivariate analysis is performed and a model equation that is used to predict a variation amount of the performance and includes at least one of the variation factors as a variable is derived (Step 214). Therefore, after deriving the model equation, a variation amount of the performance can be predicted using the model equation by obtaining data on the variation factor that serves as the variable (Step 238). Accordingly, it becomes possible to maintain the performance described above with good accuracy in accordance with the prediction results and also optimize the implementation timing of maintenance and the like.

Abstract: A wafer measurement/inspection instrument receives information on at least one of a processing result and an operating state of at least one of a coater/developer that performs film forming/resist processing to a wafer and an exposure apparatus that performs liquid immersion exposure to the wafer, and optimizes inspection conditions of the wafer based on the received information (steps 501 and 517). With this operation, quality inspection of the wafer can be efficiently performed, and as a consequence, it becomes possible to efficiently perform processing to the wafer.

Abstract: First, an operator inputs various parameters required for a mark recognition operation including a designated position coordinate designated via a mouse and a keyboard (step 201). Then, an edge potential position closest to the designated position is selected (step 205), or an edge potential position within a predetermined range having the designated position as a datum is selected (step 207), and a mark recognition operation is performed at the selected edge potential position (step 209). The recognition results are shown on a display (step 211).

Abstract: Alignment parameters determination method with less overlay error after exposure without tremendous expending time and cost is provided. Provision is made of a fetching unit performing position measurement and statistical processing to obtain reference computation results. Another fetching unit obtains reference processing results by positioning and exposing shots at a predetermined exposure apparatus based on the reference computation results, then measuring overlay error for the shots. Another fetching unit changes at least parts of the predetermined alignment parameters and performs position measurement and statistical processing to obtain comparative computation results. A controller 650 calculates estimated overlay error when assuming positioning and exposure of shots at a predetermined exposure apparatus based on the comparative computation results using the reference computation results, comparative computation results, and reference processing results.

Abstract: In repeated processes (steps 201 to 213) of lot processing, an analytical apparatus detects abnormality of overlay, that is, deterioration of overlay accuracy in step 211 and optimizes an apparatus parameter of an exposure apparatus so that the abnormality is solved (so that the overlay accuracy is improved), and then the optimization result is promptly reflected in the exposure apparatus and a measurement/inspection instrument. Since such optimization is performed without stopping the lot processing, the productivity of devices is not lowered.

Abstract: In the inspection of one reticle of reticles used for double exposure, the pattern area of the reticle is divided into a plurality of areas, according to (a) whether an area is a light-transmitting section or a light-shielding section, (b) whether a pattern area of the other reticle is a light-transmitting section, a light-shielding section, or a proximity section to a pattern, and the like, and inspection conditions are changed with respect to each area so that abnormality that is directly related to the yield can be detected. Thus, the defect inspection of the reticles that is directly related to the yield of device production can be performed.

Abstract: A reticle is loaded on a reticle measuring instrument (step S50), and the surface shape of the reticle in a state held by a reticle holder of the reticle measuring instrument is measured in advance (step S52). Because the surface shape difference between the reticle holder of the reticle measuring instrument and a reticle holder of an exposure apparatus is known, the surface shape of the reticle in a state equivalent to the state held by the reticle holder of the exposure apparatus can be calculated (step S56) by adding to the measurement results such surface shape difference.

Abstract: An exposure apparatus restricts reduction in throughput. The exposure apparatus controls movement such that, (1) when a substrate is moving in one direction, a first pattern is moved in a specified direction to expose a first shot region using a first exposure light, then movement of the substrate in the one direction continues while moving the second pattern in the specified direction to expose a second shot region, and (2) then the respective movement directions of the substrate and the second pattern are reversed to expose a third shot region using the second exposure light, then movement of the substrate in the reverse direction continues while moving the first pattern in a direction that is the reverse of the specified direction to expose a fourth shot region using the first exposure light.

Abstract: An exposure apparatus illuminates a pattern on a first object with an illuminating beam to expose an area to be exposed on a second object with a pattern image. The exposure apparatus includes a scanning apparatus that scans the first object in a prescribed scanning direction with the illuminating beam, and an optical guiding device that guides the illuminating beam which has scanned the first object onto the area to be exposed on the second object.

Abstract: A wafer measurement/inspection instrument receives information on at least one of a processing result and an operating state of at least one of a coater/developer that performs film forming/resist processing to a wafer and an exposure apparatus that performs liquid immersion exposure to the wafer, and optimizes inspection conditions of the wafer based on the received information (steps 501 and 517). With this operation, quality inspection of the wafer can be efficiently performed, and as a consequence, it becomes possible to efficiently perform processing to the wafer.

Abstract: In the case where measurement/inspection of a wafer is performed in a measurement/inspection instrument before and after exposure is performed in an exposure apparatus, various kinds of conditions of the exposure apparatus and the measurement/inspection instrument such as environment in the apparatus/instrument, a measurement condition of an alignment system a measurement condition of an AF measurement device, a wafer grid, and image distortion are made to be matched. In particular, in accordance with a processing state of the exposure apparatus and a coater developer, a measurement result of a film, and the like, exclusion of a mark for overlay error measurement, adjustment of the measurement condition and correction of the measurement result, adjustment of the environment, correction of the measurement result according to the environment, and adjustment of pattern defect inspection are performed.

Abstract: In a first process, a process A, an actually measured transfer position measured by a measurement/inspection instrument is indicated by a black circle. A targeted transfer position indicated by x in a process B is located at the same position as the black circle. Assuming that the weights in the subsequent processes are the same, a targeted transfer position Xtarget indicated by x in processes C, D and E is located at a moderate position with which the total deviation from an actual transfer position (black circle) measured by the measurement/inspection instrument in a process preceding the current process is minimized, that is, at a proper position with respect to a plurality of other processes. Accordingly, the productivity of devices can be improved.