Abstract: In repeated processes (steps 201 to 213) of lot processing, an analytical apparatus detects abnormality of overlay, that is, deterioration of overlay accuracy in step 211 and optimizes an apparatus parameter of an exposure apparatus so that the abnormality is solved (so that the overlay accuracy is improved), and then the optimization result is promptly reflected in the exposure apparatus and a measurement/inspection instrument. Since such optimization is performed without stopping the lot processing, the productivity of devices is not lowered.

Abstract: By repeatedly executing a predetermined measurement at set intervals, data on a predetermined performance (a best focus position) of a predetermined apparatus and data on variation factors of the performance are obtained (Steps 204 to 214). Based on the obtained data, multivariate analysis is performed and a model equation that is used to predict a variation amount of the performance and includes at least one of the variation factors as a variable is derived (Step 214). Therefore, after deriving the model equation, a variation amount of the performance can be predicted using the model equation by obtaining data on the variation factor that serves as the variable (Step 238). Accordingly, it becomes possible to maintain the performance described above with good accuracy in accordance with the prediction results and also optimize the implementation timing of maintenance and the like.

Abstract: [PROBLEM] To provide an information display method enabling efficient analysis and evaluation of alignment results and thereby facilitating the setting of effective alignment conditions or parameters. [MEANS FOR SOLUTION] The alignment information display method of the present invention receives as input the data of the results of processing relating to alignment measurement, receives as input information relating to the parameters of the alignment measurement, finds the information for display from the data of the results of processing based on the input parameters, and displays the found desired information for display by a display mode by which the effects on the alignment measurement become clear. Therefore, in setting the desired conditions, it is possible to easily confirm the results of analysis by the set conditions, that is, the effects of the set conditions. Therefore, a user can easily detect the optimum alignment conditions and parameters.

Abstract: To reduce a superimpose error after exposure without using a plenty of time or cost.

Abstract: An edge of a surface to be measured of wafer and each of search alignment marks on the wafer are detected by an inline measurement instrument or the like that operates independently of an exposure apparatus, and position coordinates of the search marks in an X?Y? coordinate system, which is a two-dimensional coordinate system substantially parallel to the surface to be measured and is set by a position of a notch of the wafer, are measured. Then, in pre-alignment performed when loading the wafer into the exposure apparatus, the edge of the wafer is detected, and from the detection results, position information of the object in the X?Y? coordinate system is measured.

Abstract: [PROBLEM] To enable confirmation of whether a substrate processing system is being illicitly used and preventing that use when there is the fact of illicit use. [MEANS FOR SOLUTION] A license file LF is a file encrypting license information L including usage terms of a substrate processing system for a specific user. A match confirmation program P2 confirms the match between the content of the license file LF decrypted by a decryption program P1 and device information DI, network information NI, and current time CT obtained from the substrate processing system to confirm the existence of the fact of illicit use. If there is illicit use, the control program P3 stops operation of the substrate processing system until predetermined action is taken based on the information from the match confirmation program P2.

Abstract: In the inspection of one reticle of reticles used for double exposure, the pattern area of the reticle is divided into a plurality of areas, according to (a) whether an area is a light-transmitting section or a light-shielding section, (b) whether a pattern area of the other reticle is a light-transmitting section, a light-shielding section, or a proximity section to a pattern, and the like, and inspection conditions are changed with respect to each area so that abnormality that is directly related to the yield can be detected. Thus, the defect inspection of the reticles that is directly related to the yield of device production can be performed.

Abstract: When a host issues an analysis order that specifically instructs the analytical contents to an analytical apparatus (step 401), the analytical apparatus collects two types of measurement and/or inspection results from a measurement and/or inspection instrument (steps 403 to 409), and in step 411, the analytical apparatus analyzes the measurement and/or inspection results and optimizes processing conditions of a series of processes related to wafer W. In step 411, data related to a processing state of a processing apparatus is acquired from the processing apparatus as needed. In step 413, the measurement and/or inspection results and the optimization results are accumulated in a database, and the optimization results are transmitted to various processing apparatuses (including the measurement and/or inspection instrument). After that, the analytical apparatus sends a processing end notice to the host (step 417).

Abstract: A communication server connects together device manufacturing processing apparatuses such as exposure apparatuses and various inspection apparatuses and the like. This communication server is provided with a file format conversion section that converts the format of data exchanged between device manufacturing processing apparatuses, a communication message conversion section that converts communication messages, and a communication protocol conversion section that converts communication protocols. The communication server receives information transmitted from a transmission source compatibly with a device manufacturing processing apparatus which is the transmission source, and transmits the received information compatibly with a device manufacturing processing apparatus that is a destination of the transmission.

Abstract: A line width of a pattern on a substrate that is exposed and developed in an exposure apparatus is measured by a measuring instrument. In the case the line width is judged to be abnormal (step 303), an analytical apparatus specifies an apparatus that causes a line width variation factor (step 307) based on a degree of coincidence between an actual measurement value and a simulation value of the line width, specifies a line width variation factor based on a statistical value (step 311), optimizes parameters (steps 315 and 317) or the like. With these operations, the yield in device manufacturing processes improves.

Abstract: high performance and high quality micro devices, etc. are produced highly efficiently at a high throughput. Before transferring a wafer W to an exposure apparatus 200 for exposing the wafer W, marks formed on the wafer W is measured by an in-line measurement device 400 and a measurement result and/or a result of performing calculation processing on the measurement result is notified to the exposure apparatus 200. In the exposure apparatus 200, a measurement condition is optimized based on the notified result and an alignment processing and other processing are performed.

Abstract: First, an operator inputs various parameters required for a mark recognition operation including a designated position coordinate designated via a mouse and a keyboard (step 201). Then, an edge potential position closest to the designated position is selected (step 205), or an edge potential position within a predetermined range having the designated position as a datum is selected (step 207), and a mark recognition operation is performed at the selected edge potential position (step 209). The recognition results are shown on a display (step 211).

Abstract: A reticle is loaded on a reticle measuring instrument (step S50), and the surface shape of the reticle in a state held by a reticle holder of the reticle measuring instrument is measured in advance (step S52). Because the surface shape difference between the reticle holder of the reticle measuring instrument and a reticle holder of an exposure apparatus is known, the surface shape of the reticle in a state equivalent to the state held by the reticle holder of the exposure apparatus can be calculated (step S56) by adding to the measurement results such surface shape difference.

Abstract: An alignment method enabling reduction of the effects on throughput and nonlinear correction for the optimum shot alignment for each wafer. According to the present invention, the nonlinear error is corrected by EGA calculation having higher order terms. One or more correction conditions (correction coefficients) are selected with reference EGA log data or overlay measurement data in advance for each process condition and registered in an exposure apparatus. At the time of lot processing of the exposure apparatus, the shot alignment of several sample shots is detected to detect the trend in nonlinear error and a single optimum correction coefficient is selected based on this from the registered plurality of correction coefficients. Further, after ordinary EGA, higher order EGA is performed using the selected correction coefficient to correct the nonlinear component and position each shot area.

Abstract: A scanning exposure apparatus which promptly analyzes a cause for a variation in exposure line width. The scanning exposure apparatus includes a mask stage on which a mask is placed, a wafer stage on which a wafer is placed, a focusing mechanism which detects surface position information of the wafer and adjustment means which adjusts the surface position of the wafer. Control means acquires pose information of the wafer adjusted by the adjustment means at the time of exposure and stores the pose information in a memory in association with preacquired surface shape information of an exposure area. A state in which the exposed surface of the wafer has been exposed with respect to exposure light is known from the pose information and the surface shape information.

Abstract: A scanning exposure apparatus which promptly analyzes a cause for a variation in exposure line width. The scanning exposure apparatus includes a mask stage on which a mask is placed, a wafer stage on which a wafer is placed, a focusing mechanism which detects surface position information of the wafer and adjustment means which adjusts the surface position of the wafer. Control means acquires pose information of the wafer adjusted by the adjustment means at the time of exposure and stores the pose information in a memory in association with preacquired surface shape information of an exposure area. A state in which the exposed surface of the wafer has been exposed with respect to exposure light is known from the pose information and the surface shape information.

Abstract: A scanning exposure apparatus which promptly analyzes a cause for a variation in exposure line width. The scanning exposure apparatus includes a mask stage on which a mask is placed, a wafer stage on which a wafer is placed, a focusing mechanism which detects surface position information of the wafer and adjustment means which adjusts the surface position of the wafer. Control means acquires pose information of the wafer adjusted by the adjustment means at the time of exposure and stores the pose information in a memory in association with preacquired surface shape information of an exposure area. A state in which the exposed surface of the wafer has been exposed with respect to exposure light is known from the pose information and the surface shape information.

Abstract: A scanning exposure apparatus which promptly analyzes a cause for a variation in exposure line width. The scanning exposure apparatus includes a mask stage on which a mask is placed, a wafer stage on which a wafer is placed, a focusing mechanism which detects surface position information of the water and adjustment means which adjusts the surface position of the wafer. Control means acquires pose information of the wafer adjusted by the adjustment means at the time of exposure and stores the pose information in a memory in association with preacquired surface shape information of an exposure area. A state in which the exposed surface of the wafer has been exposed with respect to exposure light is known from the pose information and the surface shape information.

Abstract: A scanning exposure apparatus which promptly analyzes a cause for a variation in exposure line width. The scanning exposure apparatus includes a mask stage on which a mask is placed, a wafer stage on which a wafer is placed, a focusing mechanism which detects surface position information of the wafer and adjustment means which adjusts the surface position of the wafer. Control means acquires pose information of the wafer adjusted by the adjustment means at the time of exposure and stores the pose information in a memory in association with preacquired surface shape information of an exposure area. A state in which the exposed surface of the wafer has been exposed with respect to exposure light is known from the pose information and the surface shape information.

Abstract: In an image processing method of effecting the pattern matching of an input image and a pre-memorized reference image, the reference image is pre-memorized in memory means and the input image is input to input means. The reference image and the input image obtained from the memory means and the input means, respectively, have the same differential filters applied thereto by differentiation means, whereby a differential reference image and a differential input image are obtained. The differential reference image and the differential input image are input to differential correlation value calculation means or inner product sum calculation means, whereby the cross-correlation value or the inner product sum of these is calculated, and the local maximum value of the cross-correlation value or the inner product sum is found by image recognizing means to thereby find the relative positional relation between the reference image and the input image.