Abstract: A satisfaction level calculation device (10) acquires environmental data detected by each of a plurality of environment sensors (20). The satisfaction level calculation device (10) sets each of a plurality of indexes about a space environment as a target index. The satisfaction level calculation device (10) calculates, from the environmental data acquired by measuring the target index, an individual satisfaction level, which is a satisfaction level of the target index. The satisfaction level calculation device (10) calculates, from the individual satisfaction level about each of the plurality of indexes, an overall satisfaction level, which is an overall satisfaction level about the space environment.

Abstract: The present technique pertains to a signal processing apparatus, a signal processing method, and a receiving apparatus that enable gain control to be appropriately performed on various interfering signals. An amplifier controls a gain according to a count value to amplify a signal, and a comparator compares the signal outputted by the amplifier with the count value. An accumulator counts the count value according to an output from the comparator. The present technique can be applied to, for example, a receiving apparatus that receives an RF signal for a television broadcast.

Abstract: An in-vehicle system installed in a vehicle including a plurality of relay devices, wherein the plurality of relay devices are installed in a plurality of installation areas partitioned in the vehicle and include a plurality of connectors corresponding in number to the plurality of installation areas, the number and shapes of the plurality of connectors are standardized between the plurality of relay devices, harnesses extended from the plurality of installation areas are connected to the plurality of connectors either directly or via relay connectors, the plurality of relay devices include: a first relay device in which harnesses extended from different installation areas are connected to the plurality of connectors; and a second relay device other than the first relay device, and the number of relay connectors connected to the first relay device is no greater than the number of relay connectors connected to the second relay device.

Abstract: Techniques may relate to an electrode having high production efficiency of a synthetic gas containing at least CO. Such techniques relating to an electrode may include: a catalyst that produces at least carbon monoxide by a reduction reaction; an electrode material including the catalyst; and a solid base additive provided at least on the electrode material.

Abstract: A third semiconductor layer (105) including a third nitride semiconductor is provided between an electrode (110) and a second semiconductor layer (104) including a second nitride semiconductor. The band gap of the second nitride semiconductor is set such that the carrier movement between a first semiconductor layer (103) and the third semiconductor layer (105) via the second semiconductor layer (104) is rate-determined by a diffusion process. The thickness of the second semiconductor layer (104) is set such that the carrier movement between the first semiconductor layer (103) and the third semiconductor layer (105) via the second semiconductor layer (104) is rate-determined by the diffusion process. The carrier movement between the first semiconductor layer (103) and the third semiconductor layer (105) via the second semiconductor layer (104) is rate-determined by a field emission process.

Abstract: A third semiconductor layer (105) including a third nitride semiconductor is provided between an electrode (110) and a second semiconductor layer (104) including a second nitride semiconductor. The band gap of the second nitride semiconductor is set such that the carrier movement between a first semiconductor layer (103) and the third semiconductor layer (105) via the second semiconductor layer (104) is rate-determined by a diffusion process. The thickness of the second semiconductor layer (104) is set such that the carrier movement between the first semiconductor layer (103) and the third semiconductor layer (105) via the second semiconductor layer (104) is rate-determined by the diffusion process. The carrier movement between the first semiconductor layer (103) and the third semiconductor layer (105) via the second semiconductor layer (104) is rate-determined by a field emission process.

Abstract: A digital baseband signal for radio frequency transmission is processed prior to performing digital-to-analog conversion. The digital baseband signal is filtered. The number of bits of the digital baseband signal is reduced to minimise the size of the digital-to-analog converter. By performing some of the bit reduction before filtering, the size of the filter circuit is reduced whilst still meeting relevant performance parameters.

Abstract: A technology is provided where a high performance Schottky-barrier diode and other semiconductor elements can be formed in the same chip controlling the increase in the number of steps. After a silicon oxide film is deposited over a substrate where an n-channel type MISFET is formed and the silicon oxide film over a gate electrode and n+ type semiconductor region is selectively removed, a Co film is deposited over the substrate and a CoSi2 layer is formed over the n+ type semiconductor region and the gate electrode by applying a heat treatment to the substrate.

Abstract: A technology is provided where a high performance Schottky-barrier diode and other semiconductor elements can be formed in the same chip controlling the increase in the number of steps. After a silicon oxide film is deposited over a substrate where an n-channel type MISFET is formed and the silicon oxide film over a gate electrode and n+ type semiconductor region is selectively removed, a Co film is deposited over the substrate and a CoSi2 layer is formed over the n+ type semiconductor region and the gate electrode by applying a heat treatment to the substrate.

Abstract: A technology is provided where a high performance Schottky-barrier diode and other semiconductor elements can be formed in the same chip controlling the increase in the number of steps. After a silicon oxide film is deposited over a substrate where an n-channel type MISFET is formed and the silicon oxide film over a gate electrode and n+ type semiconductor region is selectively removed, a Co film is deposited over the substrate and a CoSi2 layer is formed over the n+ type semiconductor region and the gate electrode by applying a heat treatment to the substrate.

Abstract: An automatic gain control circuit able to perform high speed and correct level acquisition, able to prevent occurrence of error, and able to prevent a crash of the system. An amplification gain controller outputs a gain control signal to an automatic gain control amplifier to amplify the received signal with maximum value when receiving a burst detection trigger signal. A second gain control signal based on the detected reception signal power is calculated when receiving a first burst synchronization detection signal; and this second gain control signal is output to the automatic gain control amplifier. A received digital signal is amplified with the second gain and integrated to find the reception signal power, from which a third gain control signal is calculated and outputted to the automatic gain control amplifier to amplify the received signal with this third gain.

Abstract: A technology is provided where a high performance Schottky-barrier diode and other semiconductor elements can be formed in the same chip controlling the increase in the number of steps. After a silicon oxide film is deposited over a substrate where an n-channel type MISFET is formed and the silicon oxide film over a gate electrode and n+ type semiconductor region is selectively removed, a Co film is deposited over the substrate and a CoSi2 layer is formed over the n+ type semiconductor region and the gate electrode by applying a heat treatment to the substrate.

Abstract: A step of preparing data of (1) material properties of a first part and so on and data of (2) an amount of solar radiation passing through the translucent member to reach a measuring device having a shape imitating a human body part, an amount of solar radiation to the structure, an amount of convection heat transfer in the structure, an amount of radiation heat transfer in the structure, humidity in the structure and/or a thermo-regulating function of the measuring device, and calculating at least one of the amount of heat loss from the surface of the measuring device, the temperature of the measuring device and/or the wettedness at the surface of the measuring device based on at least one in each of data (1) and (2), and a step (b) of calculating a thermal comfort index of the measuring device by using a result of the above calculation, are presented, whereby the thermal comfort of a structure is evaluated without using a laboratory equipment.

Abstract: A gain control circuit comprises a variable gain circuit having a predetermined gain control range and a control voltage supply circuit for supplying an internal control voltage to the variable gain circuit as a gain control signal. In this gain control circuit, the control voltage supply circuit generates the internal control voltage in response to an external control voltage so as to compensate the linearity of the variable gain circuit to the extent of the external control voltage where the variable gain circuit loses linearity. This gain control circuit is applied to an AGC circuit of the transmitting stage in a CDMA-type mobile phone.

Abstract: A gain control circuit comprises a variable gain circuit having a predetermined gain control range and a control voltage supply circuit for supplying an internal control voltage to the variable gain circuit as a gain control signal. In this gain control circuit, the control voltage supply circuit generates the internal control voltage in response to an external control voltage so as to compensate the linearity of the variable gain circuit to the extent of the external control voltage where the variable gain circuit loses linearity. This gain control circuit is applied to an AGC circuit of the transmitting stage in a CDMA-type mobile phone.

Abstract: A gain control circuit comprises a variable gain circuit having a predetermined gain control range and a control voltage supply circuit for supplying an internal control voltage to the variable gain circuit as a gain control signal. In this gain control circuit, the control voltage supply circuit generates the internal control voltage in response to an external control voltage so as to compensate the linearity of the variable gain circuit to the extent of the external control voltage where the variable gain circuit loses linearity. This gain control circuit is applied to an AGC circuit of the transmitting stage in a CDMA-type mobile phone.

Abstract: A gain control circuit comprises a variable gain circuit having a predetermined gain control range and a control voltage supply circuit for supplying an internal control voltage to the variable gain circuit as a gain control signal. In this gain control circuit, the control voltage supply circuit generates the internal control voltage in response to an external control voltage so as to compensate the linearity of the variable gain circuit to the extent of the external control voltage where the variable gain circuit loses linearity. This gain control circuit is applied to an AGC circuit of the transmitting stage in a CDMA-type mobile phone.

Abstract: The present invention provides systems and methods related to a variable gain amplifier. The variable gain amplifier includes a first differential amplifier, a second differential amplifier, a combining circuit, and a current control circuit. The first differential amplifier circuit and the second differential amplifier circuit share a common input signal and have different amplification degrees. Each of the first and second differential amplifier circuits includes a first transistor and a second transistor that form a differential pair. The first transistor and the second transistor of each differential amplifier circuit have bases that are supplied with the input signal, and collectors that output signals to the combining circuit. The current control circuit changes a ratio between a bias current of the first differential amplifier circuit and a bias current of said second differential amplifier circuit based on a gain control signal.

Abstract: A gain control circuit comprises a variable gain circuit having a predetermined gain control range and a control voltage supply circuit for supplying an internal control voltage to the variable gain circuit as a gain control signal. In this gain control circuit, the control voltage supply circuit generates the internal control voltage in response to an external control voltage so as to compensate the linearity of the variable gain circuit to the extent of the external control voltage where the variable gain circuit loses linearity. This gain control circuit is applied to an AGC circuit of the transmitting stage in a CDMA-type mobile phone.

Abstract: A step of preparing data of (1) material properties of a first part and so on and data of (2) an amount of solar radiation passing through the translucent member to reach a measuring device having a shape imitating a human body part, an amount of solar radiation to the structure, an amount of convection heat transfer in the structure, an amount of radiation heat transfer in the structure, humidity in the structure and/or a thermo-regulating function of the measuring device, and calculating at least one of the amount of heat loss from the surface of the measuring device, the temperature of the measuring device and/or the wettedness at the surface of the measuring device based on at least one in each of data (1) and (2), and a step (b) of calculating a thermal comfort index of the measuring device by using a result of the above calculation, are presented, whereby the thermal comfort of a structure is evaluated without using a laboratory equipment.