Abstract: Provided is a charged particle beam device that is small, high performance, and easy to transport. A charged particle beam device (100) is provided with a detachable body unit (15) and an auxiliary unit (14), the body unit (15) housing a functional unit related to charged particle beams, and the auxiliary unit (14) housing a power source unit (9).

Abstract: Provided is a charged particle beam device that is small, high performance, and easy to transport. A charged particle beam device (100) is provided with a detachable body unit (15) and an auxiliary unit (14), the body unit (15) housing a functional unit related to charged particle beams, and the auxiliary unit (14) housing a power source unit (9).

Abstract: Provided is a charged particle beam device that is capable of suppressing an field-of-view deviation occurring when observing a tilted image or a left-right parallax-angle image acquired by irradiating a tilted beam on a sample while continuously compensating a focus. By means of an aligner for compensating field-of-view (54) installed between an objective lens (7) that focuses a primary charged particle beam on a surface of the sample (10), and a deflector for controlling tilt angle (53) that tilts the primary charged particle beam, the field-of-view deviation occurring during tilting of the primary charged particle beam is suppressed based on an amount of compensation required by a tilt angle of the deflector for controlling tilt angle (53), lens conditions, and a distance between the objective lens (7) and the sample (10), in conjunction with a focus compensation of the objective lens (7).

Abstract: A charged particle beam apparatus is provided with a parameter adjustment practice function for allowing any user to easily learn manual focus adjustment and stigma adjustment. Control conditions of the focus arrangement of an objective lens, an X-stigmator and a Y-stigmator are set according to the user's operation. According to a group of the focus adjustment, an X-stigma adjustment and a Y-stigma adjustment which are set, a practice-purpose image corresponding to the control conditions is read out from a storage device and is displayed on a screen.

Abstract: In order to provide a charged-particle radiation apparatus capable of evaluating and distinguishing the analysis position in a sample subjected to X-ray analysis in the stage before performing X-ray elemental analysis, and also making it possible for an analyst to perform, in a short period of time and without reworking, analysis for which high reliability is ensured, the present invention provides a charged-particle radiation apparatus provided with an X-ray detector, wherein a first back scattered electron detector (15) on the same axis as the X-ray detection surface of the X-ray detector (12 (25-30)) is disposed integrally with or independently from the X-ray detector (12), an X-ray signal being detected by the X-ray detector (12) simultaneously with or separately from detection of a back scattered electron signal by the first back scattered electron detector (15).

Abstract: In order to provide a charged-particle radiation apparatus capable of evaluating and distinguishing the analysis position in a sample subjected to X-ray analysis in the stage before performing X-ray elemental analysis, and also making it possible for an analyst to perform, in a short period of time and without reworking, analysis for which high reliability is ensured, the present invention provides a charged-particle radiation apparatus provided with an X-ray detector, wherein a first back scattered electron detector (15) on the same axis as the X-ray detection surface of the X-ray detector (12 (25-30)) is disposed integrally with or independently from the X-ray detector (12), an X-ray signal being detected by the X-ray detector (12) simultaneously with or separately from detection of a back scattered electron signal by the first back scattered electron detector (15)

Abstract: In recent years, a range of users for a charged particle beam apparatus such as a scanning electron microscope has been broadened. All users want to learn a manual adjustment technology, but it is very difficult to adjust all parameters for observation to have an appropriate value. Therefore, a beginner is unlikely to sufficiently show a performance of an apparatus. This disclosure aims to provide the charged particle beam apparatus including a parameter adjustment practice function for allowing any user to easily learn the manual adjustment technology. In order to solve the above-described problem, there is provided means for practicing a focus adjustment and a stigma adjustment. Control conditions of the focus arrangement of an objective lens, an X-stigmator and a Y-stigmator are set according to the user's operation.

Abstract: Provided is a charged particle beam device that is capable of suppressing an field-of-view deviation occurring when observing a tilted image or a left-right parallax-angle image acquired by irradiating a tilted beam on a sample while continuously compensating a focus. By means of an aligner for compensating field-of-view (54) installed between an objective lens (7) that focuses a primary charged particle beam on a surface of the sample (10), and a deflector for controlling tilt angle (53) that tilts the primary charged particle beam, the field-of-view deviation occurring during tilting of the primary charged particle beam is suppressed based on an amount of compensation required by a tilt angle of the deflector for controlling tilt angle (53), lens conditions, and a distance between the objective lens (7) and the sample (10) , in conjunction with a focus compensation of the objective lens (7).

Abstract: A charged particle beam impinging on a specimen is set to have left and right tilt angles corresponding to a parallactic angle. A control unit is provided which scans the beam over the specimen while giving a left tilt and a right tilt corresponding to the parallactic angle alternately to the beam on each scanning line. In this way, images are acquired. A three-dimensional image in which deterioration of the resolution is suppressed is displayed in real time by combining aberration cancellation means with the control of the beam according to the parallactic angle. The aberration cancellation means uses an optical system having plural stages of lenses to provide overall cancellation of aberrations by making use of the action of a lens to deflect the beam back to the optical axis.

Abstract: In a VP-SEM that uses gas multiplication induced within a low-vacuum sample chamber and uses a method of detecting a positive displacement current, a secondary electron detector for the VP-SEM that responds at high speed, which can acquire a TV-Scan rate image at a low cost while saving a space is provided. A secondary electron detector is formed by forming the electron supplying electrode and the detection electrode on the flexible thin film type substrate such as a polyimide film, etc., by an etching method. Thereby, the space can be saved while realizing low cost due to mass production. Further, the ion horizontally moving with respect to the surface of the secondary electron detector is detected and the ion moving in a vertical direction returned to the sample holder is not detected, making it possible to realize a high-speed response.

Abstract: A charged particle beam apparatus facilitating adjusting a beam center axis of a charged particle beam in a case where optical conditions are modified or in a case where the beam center axis of the charged particle beam is moved due to state variation of the apparatus. When the beam center axis of a primary charged particle beam is adjusted with a deflector (aligner), a first processing step for measuring the sensitivity of the aligner and a second processing step for detecting the deviation between the center of the primary charged particle beam and the center of the objective aperture are provided. The charged particle beam apparatus determines the aligner set values, using the aligner sensitivity measured in the first processing step and the amount of deviation detected in the second processing step, such that the primary charged particle beam passes through the center of the objective aperture and controls the aligner using the aligner set values.

Abstract: A method for manufacturing a silicon wafer is characterized by performing one or both of grinding and polishing to a thin discoid silicon wafer to give bowl-shaped warpage that is concave at a central part to a wafer surface. One main surface of the thin discoid silicon wafer is adsorbed and held, and one or both of grinding and polishing are performed to the other main surface to fabricate a convex wafer whose thickness is increased from a wafer outer periphery toward a wafer center or fabricate a concave wafer whose thickness is reduced from the wafer outer periphery toward the wafer center. Then, the other main surface is adsorbed and held to protrude the center or the periphery of the one main surface side based on elastic deformation. One or both of grinding and polishing are carried out with respect to the one main surface to flatten the main surface, and adsorption and holding are released to give bowl-shaped warpage that is concave at the central part to the other main surface or the one main surface.

Abstract: A method for manufacturing a silicon wafer is characterized by performing one or both of grinding and polishing to a thin discoid silicon wafer to give bowl-shaped warpage that is concave at a central part to a wafer surface. One main surface of the thin discoid silicon wafer is adsorbed and held, and one or both of grinding and polishing are performed to the other main surface to fabricate a convex wafer whose thickness is increased from a wafer outer periphery toward a wafer center or fabricate a concave wafer whose thickness is reduced from the wafer outer periphery toward the wafer center. Then, the other main surface is adsorbed and held to protrude the center or the periphery of the one main surface side based on elastic deformation. One or both of grinding and polishing are carried out with respect to the one main surface to flatten the main surface, and adsorption and holding are released to give bowl-shaped warpage that is concave at the central part to the other main surface or the one main surface.

Abstract: In a scanning electron microscope, a reflection plate at ground potential is provided in a specimen chamber and backscattering electrons given off from a specimen impinge on the reflection plate to generate subsidiary electrons. An electric field supply electrode applied with a positive voltage of +100 to +500V is arranged in a gap defined by the reflection plate and a specimen stage. A first detection electrode is arranged to detect ion current attributable to backscattering electrons and a second detection electrode is arranged to detect current representative of coexistence of ion currents attributable to secondary electron and backscattering electron. The scanning electron microscope constructed as above can achieve simultaneous separation/detection of secondary electron and backscattering electron.

Abstract: A scanning electron microscope includes an irradiation optical system for irradiating an electron beam to a sample; a sample holder for supporting the sample, arranged inside a sample chamber; at least one electric field supply electrode arranged around the sample holder; and an ion current detection electrode.

Abstract: A method for manufacturing a silicon wafer is characterized by performing one or both of grinding and polishing to a thin discoid silicon wafer to give bowl-shaped warpage that is concave at a central part to a wafer surface. One main surface of the thin discoid silicon wafer is adsorbed and held, and one or both of grinding and polishing are performed to the other main surface to fabricate a convex wafer whose thickness is increased from a wafer outer periphery toward a wafer center or fabricate a concave wafer whose thickness is reduced from the wafer outer periphery toward the wafer center. Then, the other main surface is adsorbed and held to protrude the center or the periphery of the one main surface side based on elastic deformation. One or both of grinding and polishing are carried out with respect to the one main surface to flatten the main surface, and adsorption and holding are released to give bowl-shaped warpage that is concave at the central part to the other main surface or the one main surface.

Abstract: A charged particle beam impinging on a specimen is set to have left and right tilt angles corresponding to a parallactic angle. A control unit is provided which scans the beam over the specimen while giving a left tilt and a right tilt corresponding to the parallactic angle alternately to the beam on each scanning line. In this way, images are acquired. A three-dimensional image in which deterioration of the resolution is suppressed is displayed in real time by combining aberration cancellation means with the control of the beam according to the parallactic angle. The aberration cancellation means uses an optical system having plural stages of lenses to provide overall cancellation of aberrations by making use of the action of a lens to deflect the beam back to the optical axis.

Abstract: In a VP-SEM that uses gas multiplication induced within a low-vacuum sample chamber and uses a method of detecting a positive displacement current, a secondary electron detector for the VP-SEM that responds at high speed, which can acquire a TV-Scan rate image at a low cost while saving a space is provided. A secondary electron detector is formed by forming the electron supplying electrode and the detection electrode on the flexible thin film type substrate such as a polyimide film, etc., by an etching method. Thereby, the space can be saved while realizing low cost due to mass production. Further, the ion horizontally moving with respect to the surface of the secondary electron detector is detected and the ion moving in a vertical direction returned to the sample holder is not detected, making it possible to realize a high-speed response.

Abstract: A bonded SOI wafer is manufactured by performing bonding in a state where organics exist on a surface of an active layer wafer and/or on a surface of a supporting wafer and performing heat-treating for bonding reinforcement in a state where the organics are trapped at an interface between the active layer wafer and the supporting wafer to form crystal defects at an interface between the active layer wafer and an oxide film and/or at an interface between the supporting wafer and the oxide film. This allows a simple and inexpensive gettering source to be formed at the interface between an SOI layer and an insulating layer (oxide film). Also, the bonded SOI wafer of the present invention that is manufactured by this method can effectively remove heavy-metal impurities that may have a negative impact on the characteristics of the device and/or the withstand voltage characteristics of the oxide film.

Abstract: This bonded SOI substrate includes: an SOI layer having a low density impurity layer in which dopants are present at low density and a high density impurity layer in which dopants are present at high density; a wafer for a support substrate which supports said SOI layer; and a buried insulating film, wherein said SOI layer and said wafer for a support substrate are bonded with said buried insulating film therebetween, and gettering sites are formed in said high density impurity layer.