Abstract: A conductive C-plane GaN substrate has a resistivity of 2×10?2 ?·cm or less or an n-type carrier concentration of 1×1018 cm?3 or more at room temperature. At least one virtual line segment with a length of 40 mm can be drawn at least on one main surface of the substrate. The line segment satisfies at least one of the following conditions (A1) and (B1): (A1) when an XRC of (004) reflection is measured at 1 mm intervals on the line segment, a maximum value of XRC-FWHMs across all measurement points is less than 30 arcsec; and (B1) when an XRC of the (004) reflection is measured at 1 mm intervals on the line segment, a difference between maximum and minimum values of XRC peak angles across all the measurement points is less than 0.2°.

Abstract: A conductive C-plane GaN substrate has a resistivity of 2×10?2 ?·cm or less or an n-type carrier concentration of 1×1018 cm?3 or more at room temperature. At least one virtual line segment with a length of 40 mm can be drawn at least on one main surface of the substrate. The line segment satisfies at least one of the following conditions (A1) and (B1): (A1) when an XRC of (004) reflection is measured at 1 mm intervals on the line segment, a maximum value of XRC-FWHMs across all measurement points is less than 30 arcsec; and (B1) when an XRC of the (004) reflection is measured at 1 mm intervals on the line segment, a difference between maximum and minimum values of XRC peak angles across all the measurement points is less than 0.2°.

Abstract: In an information processing device (a server device), a first acquirer acquires multiple captured images of the outside of a vehicle. A detector detects, from acquired multiple captured images, multiple images related to unsafe driving using a learned model. An image extractor extracts, from detected multiple images related to unsafe driving, an image to be a candidate for relearning data of the learned model.

Abstract: A stop detection device includes: an acquirer that acquires multiple captured images captured in chronological order by a camera mounted on a vehicle; an image processor that performs image processing on acquired multiple captured images; and a detector that detects vehicle speed of a vehicle at a stop position based on a result of image processing. The image processor includes a stop position identification unit that detects a marking indicating a stop position from a captured image to identify a stop position, and a vehicle speed calculation unit that calculates vehicle speed by comparing captured images in chronological order. The vehicle speed calculation unit excludes a specific region from each of multiple captured images to compare captured images.

Abstract: A GaN single crystal having a gallium polar surface which is a main surface on one side and a nitrogen polar surface which is a main surface on the opposite side, wherein on the gallium polar surface is found at least one square area, an outer periphery of which is constituted by four sides of 2 mm or more in length, and, when the at least one square area is divided into a plurality of sub-areas each of which is a 100 ?m×100 ?m square, pit-free areas account for 80% or more of the plurality of sub-areas.

Abstract: A driving evaluation device includes a first memory and a first processor that is coupled to the first memory. The first processor is configured to cause driving information pertaining to dangerous driving incidents collected from a vehicle to be stored in a storage unit together with types and danger ratings of the dangerous driving incidents, generate evaluation information pertaining to a driver of the vehicle based on the driving information collected from the vehicle, retrieve dangerous driving incidents pertaining to the driver based on at least one of the types or the danger ratings, and provide to a user the evaluation information that has been generated and driving information pertaining to the dangerous driving incidents that have been retrieved.

Abstract: A method for growing a GaN crystal suitable as a material of GaN substrates including C-plane GaN substrates includes: a first step of preparing a GaN seed having a nitrogen polar surface; a second step of arranging a pattern mask on the nitrogen polar surface of the GaN seed, the pattern mask being provided with a periodical opening pattern comprising linear openings and including intersections, the pattern mask being arranged such that longitudinal directions of at least part of the linear openings are within ±3° from a direction of an intersection line between the nitrogen polar surface and an M-plane; and a third step of ammonothermally growing a GaN crystal through the pattern mask such that a gap is formed between the GaN crystal and the pattern mask.

Abstract: A driving evaluation device that acquires dangerous driving detection results for a plurality of vehicles and characteristic information indicating supplementary characteristics for at least one of a driver characteristic or an environmental characteristic; and groups the acquired dangerous driving detection results according to the characteristic information, and derives a relative driving evaluation result for each driver of the plurality of vehicles, based on the grouped detection results.

Abstract: A temporary stop detection device that includes: a memory; and a processor coupled to the memory, the processor being configured to: acquire image information indicating a captured image captured by an imaging device provided to a vehicle; detect a plurality of road signs, including a temporary stop sign, from the acquired image information; and detect a temporary stop position by using a bounding box surrounding a region including the plurality of detected road signs.

Abstract: A driving evaluation device includes a first memory and a first processor that is coupled to the first memory. The first processor is configured to cause driving information pertaining to dangerous driving incidents collected from a vehicle to be stored in a storage unit together with types and danger ratings of the dangerous driving incidents, generate evaluation information pertaining to a driver of the vehicle based on the driving information collected from the vehicle, retrieve dangerous driving incidents pertaining to the driver based on at least one of the types or the danger ratings, and provide to a user the evaluation information that has been generated and driving information pertaining to the dangerous driving incidents that have been retrieved.

Abstract: A moving body obstruction detection device includes: a detection section that detects a predetermined moving body within an image that is captured by an imaging section provided at a vehicle; and an inferring section that infers a moving body state that relates to the moving body crossing a road, based on a position of a bounding box that surrounds the moving body detected by the detection section.

Abstract: A dangerous driving detection device includes: an acquisition section that acquires image information, which expresses captured images that are captured by an imaging section provided at a vehicle, and vehicle information that expresses a state of the vehicle; plural detection sections that, based on the image information and the vehicle information acquired by the acquisition section, detect types of dangerous driving that are respectively different from one another; and a deriving section that, based on results of detection of the plural detection sections, derives a degree of danger of dangerous driving of a driver.

Abstract: A high-quality nitride crystal can be produced efficiently by charging a nitride crystal starting material that contains tertiary particles having a maximum diameter of from 1 to 120 mm and formed through aggregation of secondary particles having a maximum diameter of from 100 to 1000 ?m, in the starting material charging region of a reactor, followed by crystal growth in the presence of a solvent in a supercritical state and/or a subcritical state in the reactor, wherein the nitride crystal starting material is charged in the starting material charging region in a bulk density of from 0.7 to 4.5 g/cm3 for the intended crystal growth.

Abstract: A high-quality nitride crystal can be produced efficiently by charging a nitride crystal starting material that contains tertiary particles having a maximum diameter of from 1 to 120 mm and formed through aggregation of secondary particles having a maximum diameter of from 100 to 1000 ?m, in the starting material charging region of a reactor, followed by crystal growth in the presence of a solvent in a supercritical state and/or a subcritical state in the reactor, wherein the nitride crystal starting material is charged in the starting material charging region in a bulk density of from 0.7 to 4.5 g/cm3 for the intended crystal growth.

Abstract: A GaN single crystal having a gallium polar surface which is a main surface on one side and a nitrogen polar surface which is a main surface on the opposite side, wherein on the gallium polar surface is found at least one square area, an outer periphery of which is constituted by four sides of 2 mm or more in length, and, when the at least one square area is divided into a plurality of sub-areas each of which is a 100 ?m×100 ?m square, pit-free areas account for 80% or more of the plurality of sub-areas.

Abstract: A new GaN single crystal is provided. A GaN single crystal according to the present embodiment comprises a gallium polar surface which is a main surface on one side and a nitrogen polar surface which is a main surface on the opposite side, wherein on the gallium polar surface is found at least one square area, an outer periphery of which is constituted by four sides each with a length of 2 mm or more, and, when the at least one square are is divided into a plurality of sub-areas each of which is a square of 100 ?m×100 ?m, pit-free areas account for 80% or more of the sub-areas.

Abstract: A conductive C-plane GaN substrate has a resistivity of 2×10?2 ?·cm or less or an n-type carrier concentration of 1×1018 cm?3 or more at room temperature. At least one virtual line segment with a length of 40 mm can be drawn at least on one main surface of the substrate. The line segment satisfies at least one of the following conditions (A1) and (B1): (A1) when an XRC of (004) reflection is measured at 1 mm intervals on the line segment, a maximum value of XRC-FWHMs across all measurement points is less than 30 arcsec; and (B1) when an XRC of the (004) reflection is measured at 1 mm intervals on the line segment, a difference between maximum and minimum values of XRC peak angles across all the measurement points is less than 0.2°.

Abstract: A conductive C-plane GaN substrate has a resistivity of 2×10?2 ?·cm or less or an n-type carrier concentration of 1×1018 cm?3 or more at room temperature. At least one virtual line segment with a length of 40 mm can be drawn at least on one main surface of the substrate. The line segment satisfies at least one of the following conditions (A1) and (B1): (A1) when an XRC of (004) reflection is measured at 1 mm intervals on the line segment, a maximum value of XRC-FWHMs across all measurement points is less than 30 arcsec; and (B1) when an XRC of the (004) reflection is measured at 1 mm intervals on the line segment, a difference between maximum and minimum values of XRC peak angles across all the measurement points is less than 0.2°.

Abstract: A conductive C-plane GaN substrate has a resistivity of 2×10?2 ?·cm or less or an n-type carrier concentration of 1×1018 cm?3 or more at room temperature. At least one virtual line segment with a length of 40 mm can be drawn at least on one main surface of the substrate. The line segment satisfies at least one of the following conditions (A1) and (B1): (A1) when an XRC of (004) reflection is measured at 1 mm intervals on the line segment, a maximum value of XRC-FWHMs across all measurement points is less than 30 arcsec; and (B1) when an XRC of the (004) reflection is measured at 1 mm intervals on the line segment, a difference between maximum and minimum values of XRC peak angles across all the measurement points is less than 0.2°.

Abstract: A conductive C-plane GaN substrate has a resistivity of 2×10?2 ?·cm or less or an n-type carrier concentration of 1×1018 cm?3 or more at room temperature. At least one virtual line segment with a length of 40 mm can be drawn at least on one main surface of the substrate. The line segment satisfies at least one of the following conditions (A1) and (B1): (A1) when an XRC of (004) reflection is measured at 1 mm intervals on the line segment, a maximum value of XRC-FWHMs across all measurement points is less than 30 arcsec; and (B1) when an XRC of the (004) reflection is measured at 1 mm intervals on the line segment, a difference between maximum and minimum values of XRC peak angles across all the measurement points is less than 0.2°.