Abstract: A method for growing a GaN crystal suitable as a material of GaN substrates including C-plane GaN substrates includes: a first step of preparing a GaN seed having a nitrogen polar surface; a second step of arranging a pattern mask on the nitrogen polar surface of the GaN seed, the pattern mask being provided with a periodical opening pattern comprising linear openings and including intersections, the pattern mask being arranged such that longitudinal directions of at least part of the linear openings are within ±3° from a direction of an intersection line between the nitrogen polar surface and an M-plane; and a third step of ammonothermally growing a GaN crystal through the pattern mask such that a gap is formed between the GaN crystal and the pattern mask.

Abstract: A method for growing a GaN crystal suitable as a material of GaN substrates including C-plane GaN substrates includes: a first step of preparing a GaN seed having a nitrogen polar surface; a second step of arranging a pattern mask on the nitrogen polar surface of the GaN seed, the pattern mask being provided with a periodical opening pattern comprising linear openings and including intersections, the pattern mask being arranged such that longitudinal directions of at least part of the linear openings are within ±3° from a direction of an intersection line between the nitrogen polar surface and an M-plane; and a third step of ammonothermally growing a GaN crystal through the pattern mask such that a gap is formed between the GaN crystal and the pattern mask.

Abstract: A high-quality nitride crystal can be produced efficiently by charging a nitride crystal starting material that contains tertiary particles having a maximum diameter of from 1 to 120 mm and formed through aggregation of secondary particles having a maximum diameter of from 100 to 1000 ?m, in the starting material charging region of a reactor, followed by crystal growth in the presence of a solvent in a supercritical state and/or a subcritical state in the reactor, wherein the nitride crystal starting material is charged in the starting material charging region in a bulk density of from 0.7 to 4.5 g/cm3 for the intended crystal growth.

Abstract: A high-quality nitride crystal can be produced efficiently by charging a nitride crystal starting material that contains tertiary particles having a maximum diameter of from 1 to 120 mm and formed through aggregation of secondary particles having a maximum diameter of from 100 to 1000 ?m, in the starting material charging region of a reactor, followed by crystal growth in the presence of a solvent in a supercritical state and/or a subcritical state in the reactor, wherein the nitride crystal starting material is charged in the starting material charging region in a bulk density of from 0.7 to 4.5 g/cm3 for the intended crystal growth.

Abstract: A conductive C-plane GaN substrate has a resistivity of 2×10?2 ?·cm or less or an n-type carrier concentration of 1×1018 cm?3 or more at room temperature. At least one virtual line segment with a length of 40 mm can be drawn at least on one main surface of the substrate. The line segment satisfies at least one of the following conditions (A1) and (B1): (A1) when an XRC of (004) reflection is measured at 1 mm intervals on the line segment, a maximum value of XRC-FWHMs across all measurement points is less than 30 arcsec; and (B1) when an XRC of the (004) reflection is measured at 1 mm intervals on the line segment, a difference between maximum and minimum values of XRC peak angles across all the measurement points is less than 0.2°.

Abstract: A method for growing a GaN crystal suitable as a material of GaN substrates including C-plane GaN substrates includes: a first step of preparing a GaN seed having a nitrogen polar surface; a second step of arranging a pattern mask on the nitrogen polar surface of the GaN seed, the pattern mask being provided with a periodical opening pattern comprising linear openings and including intersections, the pattern mask being arranged such that longitudinal directions of at least part of the linear openings are within ±3° from a direction of an intersection line between the nitrogen polar surface and an M-plane; and a third step of ammonothermally growing a GaN crystal through the pattern mask such that a gap is formed between the GaN crystal and the pattern mask.

Abstract: A new GaN single crystal is provided. A GaN single crystal according to the present embodiment comprises a gallium polar surface which is a main surface on one side and a nitrogen polar surface which is a main surface on the opposite side, wherein on the gallium polar surface is found at least one square area, an outer periphery of which is constituted by four sides each with a length of 2 mm or more, and, when the at least one square are is divided into a plurality of sub-areas each of which is a square of 100 ?m×100 ?m, pit-free areas account for 80% or more of the sub-areas.

Abstract: A new GaN single crystal is provided. A GaN single crystal according to the present embodiment comprises a gallium polar surface which is a main surface on one side and a nitrogen polar surface which is a main surface on the opposite side, wherein on the gallium polar surface is found at least one square area, an outer periphery of which is constituted by four sides each with a length of 2 mm or more, and, when the at least one square are is divided into a plurality of sub-areas each of which is a square of 100 ?m×100 ?m, pit-free areas account for 80% or more of the sub-areas.

Abstract: A new GaN single crystal is provided. A GaN single crystal according to the present embodiment comprises a gallium polar surface which is a main surface on one side and a nitrogen polar surface which is a main surface on the opposite side, wherein on the gallium polar surface is found at least one square area, an outer periphery of which is constituted by four sides each with a length of 2 mm or more, and, when the at least one square are is divided into a plurality of sub-areas each of which is a square of 100 ?m×100 ?m, pit-free areas account for 80% or more of the sub-areas.

Abstract: A high-quality nitride crystal can be produced efficiently by charging a nitride crystal starting material that contains tertiary particles having a maximum diameter of from 1 to 120 mm and formed through aggregation of secondary particles having a maximum diameter of from 100 to 1000 ?m, in the starting material charging region of a reactor, followed by crystal growth in the presence of a solvent in a supercritical state and/or a subcritical state in the reactor, wherein the nitride crystal starting material is charged in the starting material charging region in a bulk density of from 0.7 to 4.5 g/cm3 for the intended crystal growth.

Abstract: A high-quality nitride crystal can be produced efficiently by charging a nitride crystal starting material that contains tertiary particles having a maximum diameter of from 1 to 120 mm and formed through aggregation of secondary particles having a maximum diameter of from 100 to 1000 ?m, in the starting material charging region of a reactor, followed by crystal growth in the presence of a solvent in a supercritical state and/or a subcritical state in the reactor, wherein the nitride crystal starting material is charged in the starting material charging region in a bulk density of from 0.7 to 4.5 g/cm3 for the intended crystal growth.

Abstract: A washing machine includes a vibration damping device located in an outer casing for damping vibration of a tub using a cylinder enclosing an operating fluid including a functional fluid such as a magnetic viscous fluid changing a viscosity when an electrical energy is applied to the fluid. The vibration damping device includes the cylinder, a shaft inserted into the cylinder, a coil disposed in the cylinder, two yokes disposed between the cylinder and the shaft so as to be located at both axial sides of the coil respectively, the yokes forming a magnetic circuit together with the shaft and cylinder, a sealing member disposed axially outside one of the yokes in the cylinder to seal the operating fluid, and two bearings located axially outside the respective yokes in the cylinder to support the shaft so that the shaft is axially reciprocable.

Abstract: A high-quality nitride crystal can be produced efficiently by charging a nitride crystal starting material that contains tertiary particles having a maximum diameter of from 1 to 120 mm and formed through aggregation of secondary particles having a maximum diameter of from 100 to 1000 ?m, in the starting material charging region of a reactor, followed by crystal growth in the presence of a solvent in a supercritical state and/or a subcritical state in the reactor, wherein the nitride crystal starting material is charged in the starting material charging region in a bulk density of from 0.7 to 4.5 g/cm3 for the intended crystal growth.

Abstract: A high-quality nitride crystal can be produced efficiently by charging a nitride crystal starting material that contains tertiary particles having a maximum diameter of from 1 to 120 mm and formed through aggregation of secondary particles having a maximum diameter of from 100 to 1000 ?m, in the starting material charging region of a reactor, followed by crystal growth in the presence of a solvent in a supercritical state and/or a subcritical state in the reactor, wherein the nitride crystal starting material is charged in the starting material charging region in a bulk density of from 0.7 to 4.5 g/cm3 for the intended crystal growth.

Abstract: A washing and dehydrating machine includes a circulating passage communicating between interior and exterior of a water tub, warm air generating unit rendering air in the passage warm, an overflow outlet located in the water tub surface, so that water flows through the overflow outlet when a water level in the water tub is increased to or above a level, a drain conduit introduced outside the machine via a drain valve, through which water in the water tub is discharged, an overflow conduit having a lower end connected to the drain valve and communicating with the overflow outlet, and air stopping unit located in the overflow conduit and including a trap cutting off air flow and a water supply unit supplying water to the trap, allowing water to pass through and stopping air flow. The overflow conduit is introduced outside the machine via the air stopping unit.

Abstract: A damper obtaining damping force by the frictional resistance imparted by the viscosity of the magnetic viscous fluid is disclosed. The damper is provided with a seal not only on one (lower side) of the axial outer sides of the yoke but also on the other (upper side) of the axial outer sides of the yoke to trap the magnetic viscous fluid within the magnetic viscous fluid filling portion at both axial outer sides of magnetic viscous fluid filling portion. Because the leakage of the magnetic viscous fluid can be prevented, no air is introduced into the magnetic viscous fluid filling portion, to allow the density of the magnetic viscous fluid within magnetic viscous fluid filling portion to be maintained at a favorable level and prevent degradation of damping force.

Abstract: A drum type washing-drying machine includes an air supply opening and an air discharge opening both located in a water tub, a circulation path having both ends connected to the air supply opening and the air discharge opening respectively, and branch paths located between a part of the circulation path where the condenser is located and the air supply opening and/or extending in another part of the circulation path between the evaporator and the air discharge opening. Either air supply or discharge opening is located in an upper part of the water tub front. The circulation path includes a heat exchange section where a condenser and an evaporator are disposed so as to be located below the water tub. The branch paths extend from either air supply or air discharge opening, through a periphery of the opening of the water tub front to the heat exchange section.

Abstract: A high-quality nitride crystal can be produced efficiently by charging a nitride crystal starting material that contains tertiary particles having a maximum diameter of from 1 to 120 mm and formed through aggregation of secondary particles having a maximum diameter of from 100 to 1000 ?m, in the starting material charging region of a reactor, followed by crystal growth in the presence of a solvent in a supercritical state and/or a subcritical state in the reactor, wherein the nitride crystal starting material is charged in the starting material charging region in a bulk density of from 0.7 to 4.5 g/cm3 for the intended crystal growth.

Abstract: A drum type washing machine having a suspension supporting a water tub in a vibration isolated manner and including a cylinder, a magnetic field generator fixed in the cylinder, a pair of magnetic members located at both axial sides of the field generator respectively, a smart fluid including a magneto-rheological fluid retained on an inner surface of the generator, a sealing member which is fixed in the cylinder so as to be located below the generator to prevent leakage of the smart fluid so that the smart fluid is retained, and a shaft which is supported so as to be axially reciprocable relatively along the generator, magnetic members, smart fluid, and sealing member such that reciprocation of the shaft does not substantially displace the smart fluid. The generator generates a magnetic circuit including the cylinder and the shaft.

Abstract: A damper obtaining damping force by the frictional resistance imparted by the viscosity of the magnetic viscous fluid is disclosed. The damper is provided with a seal not only on one (lower side) of the axial outer sides of the yoke but also on the other (upper side) of the axial outer sides of the yoke to trap the magnetic viscous fluid within the magnetic viscous fluid filling portion at both axial outer sides of magnetic viscous fluid filling portion.