Patents by Inventor Shinichiro Matsunaga
Shinichiro Matsunaga has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20110204437Abstract: A semiconductor device having a low on resistance and high integration level with respect to the surface area of a substrate is provided. In the semiconductor device, a first trench, a second trench, and a third trench are provided in an element formation region provided on a semiconductor substrate. Metal is deposited within the first trench and second trench, to form a drain electrode and a source electrode, respectively. Polysilicon is deposited inside the third trench with a gate insulating film intervening, and a gate electrode is formed.Type: ApplicationFiled: May 2, 2011Publication date: August 25, 2011Applicant: Fuji Electric Systems Co., Ltd.Inventor: Shinichiro MATSUNAGA
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Publication number: 20100330398Abstract: A bidirectional Trench Lateral Power MOSFET (TLPM) can achieve a high breakdown voltage and a low on-resistance. A plurality of straight-shaped islands having circular portions at both ends are surrounded by a trench arrangement. The islands provide first n source regions and a second n source region is formed on the outside of the islands. With such a pattern, the breakdown voltage in the case where the first n source regions are at a high potential can be higher than the breakdown voltage in the case where the second n source region is at a high potential. Alternatively, in the case of not changing the breakdown voltage, the on-resistance can be reduced.Type: ApplicationFiled: August 26, 2010Publication date: December 30, 2010Applicant: Fuji Electric Systems Co., Ltd.Inventors: Mutsumi Kitamura, Akio Sugi, Naoto Fujishima, Shinichiro Matsunaga
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Patent number: 7800167Abstract: A bidirectional Trench Lateral Power MOSFET (TLPM) can achieve a high breakdown voltage and a low on-resistance. A plurality of straight-shaped islands having circular portions at both ends are surrounded by a trench arrangement. The islands provide first n source regions and a second n source region is formed on the outside of the islands. With such a pattern, the breakdown voltage in the case where the first n source regions are at a high potential can be higher than the breakdown voltage in the case where the second n source region is at a high potential. Alternatively, in the case of not changing the breakdown voltage, the on-resistance can be reduced.Type: GrantFiled: May 25, 2007Date of Patent: September 21, 2010Assignee: Fuji Electric Systems Co., Ltd.Inventors: Mutsumi Kitamura, Akio Sugi, Naoto Fujishima, Shinichiro Matsunaga
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Patent number: 7737664Abstract: A battery protective device that protects against battery damage and semiconductor destruction from overdischarge and overcharge of the battery. Resistance across switching elements is controllable to prevent current leakage through parasitic dipole elements in the integrated circuit. Current is detected with an overdischarge detecting circuit and an overcharge detecting circuit. Direction of the current to/from the battery is detected by discharge overcurrent and charge overcurrent detecting circuits. Switching discharge FETs and charge FETs are enabled as independently controlled, ON-OFF parallel switching elements, interposed in series in the charge/discharge current path of the battery. Only a part of the discharge or charge switching FETs can be turned ON and OFF for accurate current control in accordance with the detected current and its direction.Type: GrantFiled: May 7, 2008Date of Patent: June 15, 2010Assignee: Fuji Electric Systems Co., Ltd.Inventor: Shinichiro Matsunaga
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Publication number: 20090085106Abstract: A semiconductor device having a low on resistance and high integration level with respect to the surface area of a substrate is provided. In the semiconductor device, a first trench, a second trench, and a third trench are provided in an element formation region provided on a semiconductor substrate. Metal is deposited within the first trench and second trench, to form a drain electrode and a source electrode, respectively. Polysilicon is deposited inside the third trench with a gate insulating film intervening, and a gate electrode is formed.Type: ApplicationFiled: September 26, 2008Publication date: April 2, 2009Applicant: Fuji Electric Device Technology Co., Ltd.Inventor: Shinichiro Matsunaga
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Publication number: 20080287466Abstract: Furo- and thienopyrimidine derivatives, which are useful as TIE-2 and/or VEGFR-2 inhibitors are described herein. The described invention also includes methods of making such furo- and thienopyrimidine derivatives as well as methods of using the same in the treatment of hyperproliferative diseases.Type: ApplicationFiled: July 9, 2008Publication date: November 20, 2008Inventors: Jerry Leroy Adams, Deborah Lynne Bryan, Yanhong Feng, Shinichiro Matsunaga, Yutaka Maeda, Yasushi Miyazaki, Masato Nakano, Jean-Philippe Rocher, Hideyuki Sato, Marcus Semones, Domingos J. Silva, Jun Tang
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Publication number: 20080278116Abstract: A battery protective device that protects against battery damage and semiconductor destruction from overdischarge and overcharge of the battery. Resistance across switching elements is controllable to prevent current leakage through parasitic dipole elements in the integrated circuit. Current is detected with an overdischarge detecting circuit and an overcharge detecting circuit. Direction of the current to/from the battery is detected by discharge overcurrent and charge overcurrent detecting circuits. Switching discharge FETs and charge FETs are enabled as independently controlled, ON-OFF parallel switching elements, interposed in series in the charge/discharge current path of the battery. Only a part of the discharge or charge switching FETs can be turned ON and OFF for accurate current control in accordance with the detected current and its direction.Type: ApplicationFiled: May 7, 2008Publication date: November 13, 2008Applicant: Fuji Electric Device Technology Co., LtdInventor: Shinichiro Matsunaga
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Publication number: 20080275127Abstract: ?-Amino hydroxamic acid derivative of the formula I, in which R is C2-C7-alkyl, which is mono-, di- or trisubstituted by halogen, nitro, lower acyloxy, trifluoromethoxy, cyano, C3-C5-cycloalkyl or unsubstituted or substituted C3-C6-heteroaryl comprising one or two heteroatoms selected from the group consisting of O, S and N; or C3-C7-alkenyl or C3-C7-alkynyl, which in each case is unsubstituted or mono-, di- or trisubstituted by halogen, nitro, lower acyloxy, trifluoromethoxy, cyano, C3-C5-cycloalkyl or unsubstituted or substituted C3-C6-heteroaryl comprising one or two heteroatoms selected from the group consisting of O, S and N; and the other symbols are as defined in claim 1, are described. These compounds are MMP and in particular MMP2 inhibitors and can be used for treatment of MMP dependent diseases, in particular inflammation conditions, rheumatoid arthritis, osteoarthritis, tumors (tumor growth, metastasis, progression or invasion) and pulmonary disorders (e.g. emphysema, COPD).Type: ApplicationFiled: October 16, 2006Publication date: November 6, 2008Inventors: Werner Breitenstein, Kenji Hayakawa, Genji Iwasaki, Takanori Kanazawa, Tatsuhiko Kasaoka, Shinichi Koizumi, Shinichiro Matsunaga, Motowo Nakajima, Junichi Sakaki
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Patent number: 7427623Abstract: Furo- and thienopyrimidine derivatives, which are useful as TIE-2 and/or VEGFR-2 inhibitors are described herein. The described invention also includes methods of making such furo- and thienopyrimidine derivatives as well as methods of using the same in the treatment of hyperproliferative diseases.Type: GrantFiled: September 10, 2002Date of Patent: September 23, 2008Assignee: SmithKline Beecham CorporationInventors: Jerry Leroy Adams, Deborah Lynne Bryan, Yanhong Feng, Shinichiro Matsunaga, Yutaka Maeda, Yasushi Miyazaki, Masato Nakano, Jean-Philippe Rocher, Hideyuki Sato, Marcus Semones, Domingos J. Silva, Jun Tang
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Publication number: 20070274110Abstract: A bidirectional Trench Lateral Power MOSFET (TLPM) can achieve a high breakdown voltage and a low on-resistance. A plurality of straight-shaped islands having circular portions at both ends are surrounded by a trench arrangement. The islands provide first n source regions and a second n source region is formed on the outside of the islands. With such a pattern, the breakdown voltage in the case where the first n source regions are at a high potential can be higher than the breakdown voltage in the case where the second n source region is at a high potential. Alternatively, in the case of not changing the breakdown voltage, the on-resistance can be reduced.Type: ApplicationFiled: May 25, 2007Publication date: November 29, 2007Applicant: Fuji Electric Device Technology Co., LtdInventors: Mutsumi Kitamura, Akio Sugi, Naoto Fujishima, Shinichiro Matsunaga
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Patent number: 7138432Abstract: ?-Amino hydroxamic acid derivative of formula (I), in which R is C2–C7-alkyl, which is mono-, di- or trisubstituted by halogen, nitro, lower acyloxy, trifluoromethoxy, cyano, C3–C5-cycloalkyl or unsubstituted or substituted C3–C4-heteroaryl comprising one or two heteroatoms selected from the group consisting of O, S and N; or C3–C7-alkenyl or C3–C7-alkynyl, which in each case is unsubstituted or mono-, di- or trisubstituted by halogen, nitro, lower acyloxy, trifluoromethoxy, cyano, C3–C5-cycloalkyl or unsubstituted or substituted C3–C6-heteroaryl comprising one or two heteroatoms selected from the group consisting of O, S and N; and the other symbols are as defined in claim 1, are described. These compounds are MMP and in particular MMP2 inhibitors and can be used for treatment of MMP dependent diseases, in particular inflammation conditions, rheumatoid arthritis, osteoarthritis, tumors (tumor growth, metastasis, progression or invasi n) and pulmonary disorders (e.g. emphysema, COPD).Type: GrantFiled: August 7, 2000Date of Patent: November 21, 2006Assignee: Novartis AGInventors: Werner Breitenstein, Kenji Hayakawa, Genji Iwasaki, Takanori Kanazawa, Tatsuhiko Kasaoka, Shinichi Koizumi, Shinichiro Matsunaga, Motowo Nakajima, Junichi Sakaki
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Publication number: 20060223826Abstract: The present invention provide a compound of the formula (I) wherein ring A represents an aromatic ring optionally having substituents; B, Y and Ya are the same or different and each represents a bond, etc.; R1 and R2 are the same or different and each represents a hydrogen atom, etc.; R3 represents a hydrogen atom, etc.; R4 and R5 are the same or different and each represents a hydrogen, etc.; R6 represents an indolyl group optionally having substituents; and Z and Za are the same or different and each represents a hydrogen atom, etc.; or a salt thereof or a prodrug thereof, having a somatostatin receptor binding inhibition activity and is useful for preventing and/or treating diseases associated with somatostatin.Type: ApplicationFiled: November 18, 2003Publication date: October 5, 2006Applicant: Takeda Pharmaceutical Company Limited Intellectual Property DepartmentInventors: Hidenori Abe, Shinichiro Matsunaga, Shiro Takekawa, Masanori Watanabe
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Patent number: 6977513Abstract: A bidirectional main switch includes two main switches M1 and M2 formed of two main MOSFET'S Q1 and Q2, respectively; a bidirectional mirror switch including two mirror switches M3 and M4 formed of two mirror MOSFET'S Q3 and Q4, respectively, both being formed so as to allow a small current (a mirror current) to flow therein in a specified ratio to a current in the main MOSFET'S Q1 and Q2; and an operational amplifier Op1 forming feed back amplifying circuit having power supplied from two power sources. Thus, a bidirectional current flowing in the bidirectional main switch for cutting off an excessive charge current and an excessive discharge current of a battery E can be detected by a simple circuit with low power losses and a high accuracy.Type: GrantFiled: November 30, 2004Date of Patent: December 20, 2005Assignee: Fuji Electric Holdings Co., Ltd.Inventor: Shinichiro Matsunaga
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Publication number: 20050189981Abstract: A bidirectional main switch includes two main switches M1 and M2 formed of two main MOSFET's Q1 and Q2, respectively; a bidirectional mirror switch including two mirror switches M3 and M4 formed of two mirror MOSFET's Q3 and Q4, respectively, both being formed so as to allow a small current (a mirror current) to flow therein in a specified ratio to a current in the main MOSFET's Q1 and Q2; and an operational amplifier Op1 forming a feed back amplifying circuit having power supplied from two power sources of a positive source VDD and a negative source—VDD, being connected between the end of the bidirectional main switch and the end of the bidirectional mirror switch, and allowing the mirror current to flow in the bidirectional mirror switch through a sensing resistor Rs so as to equalize voltages at the ends of the two bidirectional switches, with which the mirror current, consequently a battery charge and discharge current, is detected from a voltage across the sensing resistor.Type: ApplicationFiled: November 30, 2004Publication date: September 1, 2005Inventor: Shinichiro Matsunaga
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Publication number: 20050004142Abstract: Furo- and thienopyrimidine derivatives, which are useful as TIE-2 and/or VEGFR-2 inhibitors are described herein. The described invention also includes methods of making such furo- and thienopyrimidine derivatives as well as methods of using the same in the treatment of hyperproliferative diseases.Type: ApplicationFiled: September 10, 2002Publication date: January 6, 2005Inventors: Jerry Adams, Deborah Bryan, Yanhong Feng, Shinichiro Matsunaga, Yutaka Maeda, Yasushi Miyazaki, Masato Nakano, Jean-Philippe Rocher, Hideyuki Sato, Marcus Semones, Domingos Silva, Jun Tang