Abstract: This invention relates to an image sensor with photo sensors (13). An object thereof is to simplify mounting operation of an image sensor chip (12) provided with the photo sensors (13). In order to accomplish this object, according to this invention, the photo sensors (13) and electrodes (15) are disposed on the underside of the image sensor chip (12). The image sensor chip (12) is bonded to the upper side of a transparent substrate (18) by means of a transparent photo-setting type insulating resin (16), so that the electrodes (15) come into contact with circuit conductor layers (17) disposed on the upper side of the transparent substrate (18). With the above-mentioned construction, since fine metal wire (75) by which the electrodes (15) and the circuit conductor layers (17) are connected to each other is not required, mounting operation can be simplified.

Abstract: A semiconductor memory device has plural first transistors constituting an information memory circuit and plural second transistors constituting gate units for controlling information input and output. The plural first transistors and the plural second transistors are formed in mutually overlaying structure across an insulating layer. A heterogeneous material of a nucleation density sufficiently higher than that of the insulating layer and of a size small enough to grow a single nucleus of a semiconductor material is formed on the insulating layer. The transistors positioned on the insulating layer are formed in a monocrystalline or substantially monocrystalline semiconductor layer grown around the single nucleus formed on the different material.

Abstract: Methods for the production of image sensors having simplified chip mounting are provided which comprise disposing a photo-setting type insulating resin on the upper side of a substrate, a portion of the substrate being transparent and having circuit conductor layers on its upper side; bringing an image sensor chip, the underside of which has electrodes, into contact with the upper side of the substrate so that the photo-setting type resin is wedged away and the electrodes come into contact with the corresponding circuit conductor layers; flowing current into the image sensor chip through the circuit conductor layers to determine that the image sensor chip operates in a normal manner; and irradiating the photo-setting type resin with light so that the resin is hardened.

Abstract: A method for forming a hydroxyapatite coating film on a substrate which comprises coating a dispersion of flocculated colloids of hydroxyapatite on a substrate and drying. The coating method of this invention does not require heating of the coated substrate to high temperature and hence can also be applied to a substrate which is easily deteriorated with heat. The coated substrate of this invention has excellent strength and adhesion force and is useful in a variety of fields, particularly as an implant and as a material, adsorbing and separating agent.

Abstract: Image sensors are provided which include a transparent substrate having circuit conductor layers on one side thereof and an image sensor chip set on the one side of the transparent substrate by means of transparent photo-setting type insulating resin. The image sensor chip has photo sensors and electrodes on the side thereof facing the transparent substrate. The electrodes are in contact with the circuit conductor layers.

Abstract: A method for forming a hydroxyapatite coating film on a surface of a substrate which comprises coating a coating liquor onto a surface of a substrate, followed by drying and then subjecting to insolubilization (e.g., treating with an insolubilizing agent or calcination) which is characterized by using a coating liquor comprising a colloidal dispersion of hydroxyapatite having a fine particle size of 0.5 .mu.m or less.

Abstract: In a solid-state image sensor of the type consisting of a semiconductor circuit substrate capable of charge transfer or having the switching function and a photoconductive layer or a photosensor, a pattern of light-shielding checks is formed between the surface of the semiconductor circuit substrate and a transparent electrode on the photoconductive layer or a photosensor so as to optically shield the gaps or spaces between electrodes which are provided for respective picture elements and which are connected to their associated diode regions and the photoconductive layer or photosensor, whereby blooming can be suppressed without causing a decrease in sensitivity.

Abstract: A photoconductor which comprises, on a conductive substrate, a photoconductive layer of amorphous silicon hydride to which a first impurity consisting essentially of an element of Group Va or Group VIa of the Periodic Table is added. The contents of the first impurity and hydrogen in the amorphous silicon hydride layer vary in section from one side toward the other side of said layer.

Abstract: A solid-state image sensor is formed of the combination of a semiconductor substrate having a charge transfer function and a photoconductive film. In this solid-state image sensor, blooming suppressing capability is greatly increased by controlling the following potentials to fixed potentials, that is, (1) the potential of a transparent electrode formed on the photoconductive film, (2) the channel potential of a MOS field-effect transistor formed of a charge transfer stage and a gate electrode which are formed together with a Si diode in the semiconductor substrate in which the diode is electrically connected to the photoconductive film, and (3) the barrier potential of the charge transfer stage.

Abstract: This invention discloses a high efficiency solid state imager combining a semiconductor substrate having a charge transfer function and a photoelectric conversion film, wherein a high frequency transfer pulse having a frequency higher than that of a vertical transfer pulse is applied for a prescribed time during the vertical blanking period; voltages with different values are applied to a transparent electrode provided on the above-mentioned photoelectric conversion film in the first and second period of the period with the presence of the above-mentioned high frequency transfer pulse; and a voltage differing with each field is applied to the above-mentioned transparent electrode during the vertical blanking period, whereby blooming, highlight lag and flicker due to an intense light are considerably suppressed.

Abstract: A solid-state image sensor has a semiconductor substrate and a photoconductive film formed on the semiconductor substrate. The photoconductive film has a charge transfer function and subjects each field or group of picture elements to interlaced scanning. Flicker which otherwise results from inevitable differences between the magnitudes of setting voltages or areas of the photoconductive film portions with respect to the respective fields or groups of picture elements is significantly suppressed by changing the voltages applied to the photoconductive film portions with respect to each field or group of the interlaced picture element.

Abstract: A method of applying electrodeposition coating onto metallic material by continuously passing the metallic material through an electrodeposition bath comprising an alkaline-solution soluble resin, solid lubricant and water is disclosed.

Abstract: A stripe-color filter for spatial color encoding in a color TV camera, having a striped semiconductor filter-element-layer supported between a transparent substrate layer and a transparent dielectric covering layer. There are further provided a first coating layer of a transparent thin film between the substrate layer and the semiconductor filter-element-layer and a second coating layer of a transparent thin film between the semiconductor filter-element-layer and the covering layer. The refractive indexes of those layers are in the relationship: n.sub.F >n.sub.T1 >n.sub.S and n.sub.F >n.sub.T2 >n.sub.D, wherein n.sub.S represents the refractive index of the substrate layer, n.sub.T1 the first coating layer, n.sub.F the semiconductor filter-element-layer, n.sub.D the covering layer, and n.sub.T2 the second coating layer.

Abstract: In a solid-state image pickup device of the type in which a photoconductive substance is formed as a photosensor on a scanning device consisting of charge-transfer elements or MOS matrix elements, light shielding means are provided in order to optically shield the boundaries or spacing between first electrodes each of which represents a picture element and which electrically couples between the scanning device and the photosensor, whereby a high resolution can be obtained and concurrently effects of blooming can be remarkably improved.

Abstract: In a solid-state image pickup device of the type in which a photosensitive or photoconductive film is formed over a substrate capable of charge-transfer or X-Y address scanning and an electrode is formed over the photosensitive or photoconductive film, a means for applying to the electrode a voltage having an amplitude proportional to the amount of incident light, whereby blooming may be minimized and an automatic aperture control function may be attained. Because the voltage applied to the electrode over the photosensitive or photoconductive film is set so that the sensitivity of the photoconductive film may be decreased when a light image of high intensity falls on the device, blooming may be avoided.

Abstract: A solid-state image sensor is provided, which has a high spectral response over the whole visible light range and wherein a photoconductor layer having a hetero-junction defined by a hole blocking layer and a layer consisting of a system (Zn.sub.1-x Cd.sub.x Te).sub.1-y (In.sub.2 Te.sub.3).sub.y is formed over a semiconductor substrate which has charge transfer type unit cells or X-Y switching matrix type unit cells.

Abstract: The present invention relates to a microwave oscillator to be applied to radiosonde. The microwave oscillator in accordance with the present invention is constructed on a plane base plate of dielectric material (insulation material) on whose both sides conductor sheets are provided. The resonance circuit, which is the most important part of the microwave oscillator, is mounted fixedly on the one side of the base plate and electrically connected to the conductor sheet provided on the other side of the base plate. The element for determining the resonance frequency of this resonance circuit assumes a three dimensional form, whereby two bent conductor plates are combined into a case shaped body, whose one side is constructionally and electrically connected to the conductor sheet provided on the one side of the base plate.The transistor, which is an active element of the resonance circuit, is constructionally and electrically connected to a part of the case shaped metal body.

Abstract: This invention relates to a photoconductor element comprising in the following order 1) a material having wider band gap energy than CdTe, 2) a material primarily consisting of CdTe and 3) a material primarily consisting of ZnTe doped with In. The instant material exhibits characteristics in light sensitivity over entire visible light range, and a low level of dark current and a high speed of light response. This invention further relates to a target for image pickup tube employing the element and a method of making the element.

Abstract: A target for an image pickup tube having high sensitivity, low dark current and low amount of lag-image is manufactured by forming a hetero-junction by the evaporation process. A first layer of ZnS.sub.x Se.sub.1.sub.-x or Zn.sub.u Cd.sub.1.sub.-u S (wherein 0 .ltoreq. x .ltoreq. 1 and 0 .ltoreq. u .ltoreq. 1) is deposited on a light transmitting substrate having a coefficient of linear expansion of 56 .times. 10.sup..sup.-7 /.degree.C - 110 .times. 10.sup..sup.-7 /.degree.C and a second layer of (Zn.sub.y Cd.sub.1.sub.-y Te).sub.z (In.sub.2 Te.sub.3).sub.1.sub.-z (wherein 0.1 .ltoreq. y .ltoreq. 0.9 and 0.7 .ltoreq. z .ltoreq. 1) is deposited on the first layer. The substrate is then heat treated in an inert gas atmosphere or under vacuum at a temperature of 350.degree.-650.degree.C, preferably 500.degree.-600.degree.C for a time period of 5-90 minutes, preferably 5-15 minutes.