Abstract: A tube connecting apparatus capable of stably and reliably connecting tubes in which liquid is contained and sealed is provided. A tube connecting apparatus 1 equips a first tube-holding assembly 2 and a second tube-holding assembly 3, each holding tube 8, 9 in which blood is contained and sealed in a parallel state. A first clamp 6 and a second clamp 7, each pressing the tubes to a flat state, is provided at the first tube-holding assembly 2 and the second tube-holding assembly 3. A tube-pushing member 10 which presses the tubes to a flat state is disposed movably to and integrally with the first clamp 6 at a side of the second clamp 7. The tube connecting apparatus 1 has a cutting mechanism 4, disposed between the first clamp 6 and the second clamp 7, for melting and cutting the tubes, and has a movement mechanism which moves the first tube-holding assembly 2 and the second tube-holding assembly 3 such that end portions to be connected contact closely each other.

Abstract: The invention relates to a photomask for use in a thermal flow process in which: a photomask is prepared in which a plurality of exposure openings are formed; a resist is applied to the surface of a layer of a semiconductor integrated circuit that is to undergo processing; this resist is patterned by an exposure process through the photomask to form a plurality of openings in the resist that correspond to each of the exposure openings; and the patterned resist is then heated to cause each of the openings to shrink; wherein at least a portion of exposure openings among the plurality of exposure openings are formed in shapes that compensate for anisotropic deformation that occurs in the openings when the patterned resist is heated to cause each of the openings to shrink. Since the openings that are formed in the resist are provided in advance with shapes that compensate for the deformation that occurs when the openings shrink, these openings attain the proper shape after undergoing shrinking and deformation.

Abstract: A bias circuit which supplies a bias voltage to a first transistor comprises a second transistor formed on a same semiconductor substrate as the first transistor and having a control electrode and a first and a second main electrodes; a resistance circuit; and a first and a second level shifters. The second transistor is either a metal semiconductor field effect transistor or a high electron mobility transistor. One end of the resistance circuit is connected to a voltage supply, other end of the resistance circuit is connected to the first main electrode of the second transistor, the control electrode of the second transistor is connected to the second main electrode of the second transistor, the second main electrode of the second transistor is connected to a common voltage. A voltage at the first main electrode of the second transistor is divided by the first and second level shifters and the divided voltage is outputted as the bias voltage.

Abstract: A bias circuit which supplies a bias voltage to a first transistor comprises a second transistor formed on a same semiconductor substrate as the first transistor and having a control electrode and a first and a second main electrodes; a resistance circuit; and a first and a second level shifters. The second transistor is either a metal semiconductor field effect transistor or a high electron mobility transistor. One end of the resistance circuit is connected to a voltage supply, other end of the resistance circuit is connected to the first main electrode of the second transistor, the control electrode of the second transistor is connected to the second main electrode of the second transistor, the second main electrode of the second transistor is connected to a common voltage. A voltage at the first main electrode of the second transistor is divided by the first and second level shifters and the divided voltage is outputted as the bias voltage.

Abstract: A photo mask which is used for exposure of an isolated pattern and a dense pattern for a semiconductor substrate. The photo mask includes a transparent substrate, a pair of first patterns, a first assistant pattern and a plurality of second patterns. The pair of first patterns is separated from each other by a first distance, wherein one of the first pattern is arranged at one side of the isolated pattern, and another of the first pattern is arranged at another side. The first assistant pattern is provided apart from the one of the first pattern by the first distance. In the plurality of second patterns, each of the linear patterns is sandwiched between two of the second patterns that are adjacent to each other. One of the linear patterns is separated from adjacent the other of the linear patterns by a predetermined distance. A phase of light transmitted through the one of the first pattern and a phase of light transmitted through the assistant pattern are opposite to each other.

Abstract: The invention relates to a photomask for use in a thermal flow process in which: a photomask is prepared in which a plurality of exposure openings are formed; a resist is applied to the surface of a layer of a semiconductor integrated circuit that is to undergo processing; this resist is patterned by an exposure process through the photomask to form a plurality of openings in the resist that correspond to each of the exposure openings; and the patterned resist is then heated to cause each of the openings to shrink; wherein at least a portion of exposure openings among the plurality of exposure openings are formed in shapes that compensate for anisotropic deformation that occurs in the openings when the patterned resist is heated to cause each of the openings to shrink. Since the openings that are formed in the resist are provided in advance with shapes that compensate for the deformation that occurs when the openings shrink, these openings attain the proper shape after undergoing shrinking and deformation.

Abstract: The invention relates to a photomask for use in a thermal flow process in which: a photomask is prepared in which a plurality of exposure openings are formed; a resist is applied to the surface of a layer of a semiconductor integrated circuit that is to undergo processing; this resist is patterned by an exposure process through the photomask to form a plurality of openings in the resist that correspond to each of the exposure openings; and the patterned resist is then heated to cause each of the openings to shrink; wherein at least a portion of exposure openings among the plurality of exposure openings are formed in shapes that compensate for anisotropic deformation that occurs in the openings when the patterned resist is heated to cause each of the openings to shrink. Since the openings that are formed in the resist are provided in advance with shapes that compensate for the deformation that occurs when the openings shrink, these openings attain the proper shape after undergoing shrinking and deformation.

Abstract: The invention relates to a photomask for use in a thermal flow process in which: a photomask is prepared in which a plurality of exposure openings are formed; a resist is applied to the surface of a layer of a semiconductor integrated circuit that is to undergo processing; this resist is patterned by an exposure process through the photomask to form a plurality of openings in the resist that correspond to each of the exposure openings; and the patterned resist is then heated to cause each of the openings to shrink; wherein at least a portion of exposure openings among the plurality of exposure openings are formed in shapes that compensate for anisotropic deformation that occurs in the openings when the patterned resist is heated to cause each of the openings to shrink. Since the openings that are formed in the resist are provided in advance with shapes that compensate for the deformation that occurs when the openings shrink, these openings attain the proper shape after undergoing shrinking and deformation.

Abstract: A Levenson phase shift mask has a phase shifter implemented by thin transparent portions and a non-phase shifter implemented by thick transparent portions, and the thin transparent portions are to be equal in transmittance to and 180 degrees different in phase from the thick transparent portions, wherein a dispersion of light intensity in optical images of the phase shifter and the non-phase shifter obtained by a CCD camera is analyzed to see whether or not the abnormal difference in transmittance and the abnormal phase difference take place, if the abnormal difference in transmittance or the abnormal phase difference takes place, the thin/thick transparent portions are reshaped so as to repair the Levenson phase shift mask.

Abstract: Disclosed is a photomask in which contrast of light intensity of a pattern to be transferred (main pattern) is enhanced on an image plane while transfer of auxiliary pattern themselves is suppressed.

Abstract: The invention relates to a photomask for use in a thermal flow process in which: a photomask is prepared in which a plurality of exposure openings are formed; a resist is applied to the surface of a layer of a semiconductor integrated circuit that is to undergo processing; this resist is patterned by an exposure process through the photomask to form a plurality of openings in the resist that correspond to each of the exposure openings; and the patterned resist is then heated to cause each of the openings to shrink; wherein at least a portion of exposure openings among the plurality of exposure openings are formed in shapes that compensate for anisotropic deformation that occurs in the openings when the patterned resist is heated to cause each of the openings to shrink. Since the openings that are formed in the resist are provided in advance with shapes that compensate for the deformation that occurs when the openings shrink, these openings attain the proper shape after undergoing shrinking and deformation.

Abstract: In an optical disc, a sector is sequentially formed with a first gap field, a first guard data recording field, a data recording field composed of synchronous signal and user data, a second guard data recording field, and a second gap field, wherein the length of the first and second gap fields, and the length of the first and second guard data recording fields is changed randomly in every recording, and the changing amount of the first and second guard data recording fields is set smaller than the changing amount of the first and second guard data recording fields, thereby suppressing optical disc medium deterioration in every sector and every mark resulting from repeated recording.

Abstract: A photomask has a plurality of main holes which pass a prescribed light beam that is shone onto positions that make up a plurality of pattern parts, at locations that are opposite a plurality of pattern parts for said semiconductor device, this photomask also having a plurality of minute auxiliary holes, which pass a light beam of a degree that is not transferred at the time of exposure, these auxiliary holes being disposed between the main holes.

Abstract: In an optical disc, a sector is sequentially formed with a first gap field, a first guard data recording field, a data recording field composed of synchronous signal and user data, a second guard data recording field, and a second gap field, wherein the length of the first and second gap fields, and the length of the first and second guard data recording fields is changed randomly in every recording, and the changing amount of the first and second guard data recording fields is set smaller than the changing amount of the first and second guard data recording fields, thereby suppressing optical disc medium deterioration in every sector and every mark resulting from repeated recording.

Abstract: In an optical disc, a sector is sequentially formed with a first gap field, a first guard data recording field, a data recording field composed of synchronous signal and user data, a second guard data recording field, and a second gap field, wherein the length of the first and second gap fields, and the length of the first and second guard data recording fields is changed randomly in every recording, and the changing amount of the first and second guard data recording fields is set smaller than the changing amount of the first and second guard data recording fields, thereby suppressing optical disc medium deterioration in every sector and every mark resulting from repeated recording.

Abstract: An optical disc having a plurality of sectors, each sector sequentially comprising a field for recording guard data, a data recording field containing a synchronous signal and following user data, the guard data in the guard data recording field corresponding to a recording pattern of the synchronous signal, and the phase of the recording pattern being continuous at the boundary of the guard data recording field and the data recording field; and a recording method using such discs; and a device for formatting and recording on such discs.

Abstract: In an optical disc, a sector is sequentially formed with a first gap field, a first guard data recording field, a data recording field composed of synchronous signal and user data, a second guard data recording field, and a second gap field, wherein the length of the first and second gap fields, and the length of the first and second guard data recording fields is changed randomly in every recording, and the changing amount of the first and second guard data recording fields is set smaller than the changing amount of the first and second guard data recording fields, thereby suppressing optical disc medium deterioration in every sector and every mark resulting from repeated recording.

Abstract: A photomask used for a projection exposure equipment comprises a transparent substrate and a light intercepting film provided on the transparent substrate. The transparent substrate comprises a main pattern region and an auxiliary pattern region provided in a periphery of the main pattern region. The auxiliary pattern region is etched to a depth at which a phase difference arises between light transmitted through the main pattern and light transmitted through the auxiliary pattern. The phase difference is of substantially an integral number of times as large as 360 degrees, wherein the integral number is one selected from the group consisting of integral numbers of one or more and integral numbers of minus one or less. The light intercepting film comprises openings on the main pattern region and the auxiliary pattern region.

Abstract: To a projection lens system is added spherical aberration of 0.1.lambda., and the exposure is performed by using a phase-shifting mask having a phase difference of 200 degrees which is provided with a phase error of 20 degrees corresponding to the spherical aberration amount. Therefore, the focus characteristic can be more remarkably flattened as compared with the prior art in which the phase difference of the mask is set to 180 degrees and the spherical aberration of the projection lens system is set to zero, so that the depth of focus can be enlarged by about 0.2 micron and the precision of the pattern dimension of semiconductor devices manufactured by using the exposure method can be enhanced.

Abstract: Disclosed is a photomask, which has: a transparent substrate; and masking film which is selectively formed on the transparent substrate to provide a predetermined pattern composed of a transparent region and a masking region; wherein the transparent region comprises a first transparent region which is formed adjacent to the masking region and extends like a belt along the masking region and a second transparent region which lies sandwiching the first transparent region with the masking region, whereby a phase of exposure light through the first transparent region is advanced prior to that through the second transparent region.