Patents by Inventor Shinji Kawasaki

Shinji Kawasaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6869902
    Abstract: A silicon nitride porous body (5) obtained by nitriding a molded body having metallic silicon (3) as a main component, the porous body having a porous structure with an average pore diameter of 3 ?m or above, and wherein the total content of silicon and nitrogen is 95% or above and the nitridation ratio of silicon is 90% or above. The silicon nitride porous body has a porous structure with a large average pore diameter, with a test specimen cut out from the porous body exhibiting large thermal conductivity and a small thermal expansion coefficient, and can be suitably used in a component for purifying gas and/or solution such as a ceramic filter.
    Type: Grant
    Filed: June 25, 2002
    Date of Patent: March 22, 2005
    Assignee: NGK Insulators, Ltd.
    Inventors: Katsuhiro Inoue, Kenji Morimoto, Masaaki Masuda, Shinji Kawasaki, Hiroaki Sakai
  • Patent number: 6846764
    Abstract: A silicon nitride porous body which is obtained by nitriding a molded body having metallic silicon as a main component and by performing a high temperature heating treatment at a temperature higher than the nitriding temperature, and which has a porous structure with an average pore diameter of 3 ?m or above, and contains at least one kind of element selected from the group consisting of the groups 2A, 3A, 3B inclusive of lanthanoid elements, and 4B. The silicon nitride porous body has a porous structure with a large average pore diameter, a test specimen cut out from the porous body exhibiting a high thermal conductivity and a small thermal expansion coefficient, and can be suitably used in a component for purifying gas and/or solution such as a ceramic filter.
    Type: Grant
    Filed: March 25, 2002
    Date of Patent: January 25, 2005
    Assignee: NGK Insulators, Ltd.
    Inventors: Katsuhiro Inoue, Kenji Morimoto, Masaaki Masuda, Shinji Kawasaki, Hiroaki Sakai
  • Publication number: 20040266617
    Abstract: A catalyst body comprising a catalytic material containing an alkali metal and/or an alkaline earth metal, and a carrier carrying the catalytic material, and a manufacturing method of the catalyst body are provided. The carrier comprises a cordierite binder phase 1 and aggregate phases 2 dispersed in the cordierite binder phase 1. The catalyst body can hinder a deterioration in catalyst performance.
    Type: Application
    Filed: May 20, 2004
    Publication date: December 30, 2004
    Inventors: Misako Fujii, Kenji Morimoto, Shinji Kawasaki
  • Patent number: 6815038
    Abstract: A honeycomb structure constituted by cell partition walls (ribs) which form combined cells being composed of a plurality of cells adjacent to each other, and a honeycomb outer wall surrounding and holding outermost cells located at the circumference of combined cells, characterized in that cell partition walls and the honeycomb outer wall are formed by a bonded texture containing silicon carbide (SiC) as an aggregate and cordierite as a binder, and that the proportion (volume %) of silidon carbide (SiC) forming the bonded texture to the total of cordierite and silicon carbide (SiC) is 40 to 90%. This honeycomb structure can exceed required levels, in all of thermal conductivity, chemical durability, low thermal expansion and mechanical strength, producible at a low cost, and suitably used in a filter for purification of automobile exhaust gas, a catalyst carrier, etc.
    Type: Grant
    Filed: October 18, 2002
    Date of Patent: November 9, 2004
    Assignee: NGK Insulators, Ltd.
    Inventors: Kenji Morimoto, Katsuhiro Inoue, Shinji Kawasaki, Hiroaki Sakai
  • Patent number: 6794190
    Abstract: The invention provides a high capacity binary shuttle vector having T-DNA region and Ri ori and capable to integrate a large genome fragment in it; a genomic library having the ability to transform a plant, especially monocotyledonous ones; a plant transformed with the high capacity binary shuttle vector; and a method of searching for a useful gene by use of the above vector. The present high capacity binary shuttle vector can introduce a large genome fragment of 10 kb or more, easily, efficiently and stably into a plant, especially monocotyledonous ones under those conditions in which the rearrangement or deletion of these genome fragments does not occur. The invention also provides some other vectors derived from the above Ri ori driven vectors, which can integrate circular genome library plasmids with a lox site, or which can efficiently transform plants with genes of arbitrary expression properties.
    Type: Grant
    Filed: August 20, 2002
    Date of Patent: September 21, 2004
    Assignee: National Institute of Agrobological Sciences
    Inventor: Shinji Kawasaki
  • Patent number: 6777114
    Abstract: It is directed to a silicon carbide-based porous body, wherein said body is a porous one which contains silicon carbide particles as an aggregate and metallic silicon, and has an oxygen-containing phase at the surfaces of silicon carbide particles and/or metallic silicon or in the vicinity of the surfaces thereof. The silicon carbide-based porous body contains refractory particles such as silicon carbide particles or the like and yet can be produced at a relatively low firing temperature at a low cost, has a high thermal conductivity, and is superior in oxidation resistance, acid resistance, chemical resistance to ash and particulates.
    Type: Grant
    Filed: August 13, 2002
    Date of Patent: August 17, 2004
    Assignee: NGK Insulators, Ltd.
    Inventors: Takahiro Tomita, Shuichi Ichikawa, Shinji Kawasaki, Hiroaki Sakai
  • Patent number: 6764742
    Abstract: A honeycomb structure body which has a number of passages partitioned with partition walls and penetrating along the axial direction. A porous honeycomb structure body which contains refractory grains as filler, one or more elements selected from the group consisting of the rare earth elements, alkaline earth elements, Al, and Si, and the crystal containing one or more kinds of these elements. The present honeycomb structure body contains refractory grains such as silicon carbide grains and the like, but it can be produced at a relatively low firing temperature at a low price, it is sufficiently porous and high in specific surface area, and it can be used as a filter for purifying automobile exhaust gas, a catalyst carrier, and the like under the high SV conditions.
    Type: Grant
    Filed: October 1, 2002
    Date of Patent: July 20, 2004
    Assignee: NGK Insulators, Ltd.
    Inventors: Shuichi Ichikawa, Takahiro Tomita, Shinji Kawasaki, Hiroaki Sakai
  • Patent number: 6746748
    Abstract: A honeycomb structure made of a silicon carbide-based porous body and having a number of through-holes extending in the axial direction, separated by partition walls. The strength and Young's modulus of the silicon carbide-based porous body satisfy the following relation: Strength (MPa)/Young's modulus (GPa)≧1.1. The honeycomb structure contains refractory particles such as silicon carbide particles and the like and yet can be produced at a relatively low firing temperature at a low cost, has a high strength and a high thermal shock resistance, and can be suitably used, for example, as a filter for purification of automobile exhaust gas by a treatment such as plugging of through-channel at its inlet or outlet, or as a catalyst carrier, even under a high SV condition.
    Type: Grant
    Filed: August 12, 2002
    Date of Patent: June 8, 2004
    Assignee: NGK Insulators, Ltd.
    Inventors: Shuichi Ichikawa, Takahiro Tomita, Shinji Kawasaki, Hiroaki Sakai
  • Publication number: 20040023789
    Abstract: A silicon nitride porous body (5) obtained by nitriding a molded body having metallic silicon (3) as a main component, the porous body having a porous structure with an average pore diameter of 3 &mgr;m or above, and wherein the total content of silicon and nitrogen is 95% or above and the nitridation ratio of silicon is 90% or above. The silicon nitride porous body has a porous structure with a large average pore diameter, with a test specimen cut out from the porous body exhibiting large thermal conductivity and a small thermal expansion coefficient, and can be suitably used in a component for purifying gas and/or solution such as a ceramic filter.
    Type: Application
    Filed: December 23, 2002
    Publication date: February 5, 2004
    Inventors: Katsuhiro Inoue, Kenji Morimoto, Masaaki Masuda, Shinji Kawasaki, Hiroaki Sakai
  • Patent number: 6652803
    Abstract: When a nitride film is formed on a substrate containing at least metallic aluminum, a fluctuation in forming a nitride film can be prevented, or the formation of the nitride film can be accelerated. A substrate containing at least metallic aluminum is subjected to a heating treatment in vacuum of 10−3 torrs or less, and subsequently it is subjected to a heating/nitriding treatment in an atmosphere (5) containing at least nitrogen. During the heating/nitriding treatment, porous bodies (3) and (4) through which nitrogen atoms-containing gases (A) and (B) can flow are contacted with the atmosphere (5).
    Type: Grant
    Filed: July 26, 2001
    Date of Patent: November 25, 2003
    Assignee: NGK Insulators, Ltd.
    Inventors: Morimichi Watanabe, Shinji Kawasaki, Takahiro Ishikawa
  • Publication number: 20030186801
    Abstract: A silicon nitride porous body which is obtained by nitriding a molded body having metallic silicon as a main component and by performing a high temperature heating treatment at a temperature higher than the nitriding temperature, and which has a porous structure with an average pore diameter of 3 &mgr;m or above, and contains at least one kind of element selected from the group consisting of the groups 2A, 3A, 3B inclusive of lanthanoid elements, and 4B. The silicon nitride porous body has a porous structure with a large average pore diameter, a test specimen cut out from the porous body exhibiting a high thermal conductivity and a small thermal expansion coefficient, and can be suitably used in a component for purifying gas and/or solution such as a ceramic filter.
    Type: Application
    Filed: December 19, 2002
    Publication date: October 2, 2003
    Inventors: Katsuhiro Inoue, Kenji Morimoto, Masaaki Masuda, Shinji Kawasaki, Hiroaki Sakai
  • Publication number: 20030148063
    Abstract: A honeycomb structure constituted by
    Type: Application
    Filed: October 18, 2002
    Publication date: August 7, 2003
    Inventors: Kenji Morimoto, Katsuhiro Inoue, Shinji Kawasaki, Hiroaki Sakai
  • Publication number: 20030134084
    Abstract: A honeycomb structure having a large number of channels through along the axial direction and being defined by partition walls. A honeycomb structure containing a refractory particle to be an aggregate and metallic silicon and being porous. This honeycomb structure can be suitably used under high SV conditions as a filter for purifying automobile exhaust gas by treatment such as clogging or catalyst supporting.
    Type: Application
    Filed: October 7, 2002
    Publication date: July 17, 2003
    Inventors: Shuichi Ichikawa, Takahiro Tomita, Shinji Kawasaki, Hiroaki Sakai
  • Publication number: 20030108458
    Abstract: A honeycomb structure body which has a number of passages partitioned with partition walls and penetrating along the axial direction. A porous honeycomb structure body which contains refractory grains as filler, one or more elements selected from the group consisting of the rare earth elements, alkaline earth elements, Al, and Si, and the crystal containing one or more kinds of these elements. The present honeycomb structure body contains refractory grains such as silicon carbide grains and the like, but it can be produced at a relatively low firing temperature at a low price, it is sufficiently porous and high in specific surface area, and it can be used as a filter for purifying automobile exhaust gas, a catalyst carrier, and the like under the high SV conditions.
    Type: Application
    Filed: October 1, 2002
    Publication date: June 12, 2003
    Inventors: Shuichi Ichikawa, Takahiro Tomita, Shinji Kawasaki, Hiroaki Sakai
  • Patent number: 6555257
    Abstract: This invention relates to a corrosion-resistant member comprising a ceramic substrate and a silicon carbide film formed through a chemical vapor deposition process and having a resistivity at room temperature of 20-500 &OHgr;·cm, and a method of manufacturing the same as well as an heating apparatus using the same.
    Type: Grant
    Filed: October 23, 1998
    Date of Patent: April 29, 2003
    Assignee: NGK Insulators, Ltd.
    Inventors: Masao Nishioka, Naotaka Katoh, Shinji Kawasaki
  • Publication number: 20030072973
    Abstract: This invention relates to a corrosion-resistant member comprising a ceramic substrate and a silicon carbide film formed through a chemical vapor deposition process and having a resistivity at room temperature of 20-500 &OHgr;·cm, and a method of manufacturing the same as well as an heating apparatus using the same.
    Type: Application
    Filed: October 23, 1998
    Publication date: April 17, 2003
    Applicant: NGK INSULATORS, LTD.
    Inventors: MASAO NISHIOKA, NAOTAKA KATOH, SHINJI KAWASAKI
  • Publication number: 20030068553
    Abstract: An object of the present invention is to provide a novel complex oxide applicable as an oxide-ion conductor. The complex oxide according to the present invention has a basic composition of (Sm1-xAX)(Al1-yBy)O3. In the formula, “A” represents one or more element selected from the group consisting of barium, strontium and calcium; “B” represents an element selected from the group consisting of magnesium, iron and cobalt; x=0.10 to 0.30; and y=0 to 0.30.
    Type: Application
    Filed: September 26, 2002
    Publication date: April 10, 2003
    Applicant: NGK Insulators, Ltd.
    Inventors: Yoshihiko Yamamura, Kazuyuki Kaigawa, Shinji Kawasaki, Hiroaki Sakai
  • Publication number: 20030053940
    Abstract: A honeycomb structure which is a plurality of honeycomb segments (21) bonded into one piece by a bonding material (25), the honeycomb segments (21) each having a large number of through-channels (11) separated from each other by partition walls (20), the bonding material (25) being composed of components substantially same as components composing the unified boy of honeycomb segments (21), and the honeycomb segments (21) being bonded to each other at their planes substantially parallel to the direction of channels of through-channels (11), in which honeycomb structure each bonded plane (22) of each honeycomb segment (21) has a structure possessing an unbonded area (12) containing at least an edge portion opening to a periphery of its gas inlet side end face (15) and/or a periphery of its gas outlet side end face (17). With this honeycomb structure, there is no cracking caused by the thermal stress during the use, and excellent durability can be obtained.
    Type: Application
    Filed: February 1, 2002
    Publication date: March 20, 2003
    Inventors: Takashi Harada, Yukio Miyairi, Yoshiyuki Kasai, Shinji Kawasaki
  • Patent number: 6524401
    Abstract: While a nitride film is formed on a substrate containing metallic aluminum, a fluctuation in forming nitride film can be prevented, or the formation of the nitride film can be accelerated. A substrate containing at least metallic aluminum is subjected to a heating treatment in vacuum of 10−3 torr or less, and subsequently it is subjected to a heating/nitriding treatment in a atmosphere containing at least nitrogen to form a nitride film. A porous body through which a nitrogen atoms containing gas flow is clarified by heating at a temperature of 1000° C. or more under pressure of 10−4 torr or less, and then the porous body is contacted the atmosphere during the heating/nitriding step.
    Type: Grant
    Filed: July 30, 2001
    Date of Patent: February 25, 2003
    Assignee: NGK Insulators, Ltd.
    Inventors: Morimichi Watanabe, Shinji Kawasaki, Takahiro Ishikawa
  • Patent number: 6521408
    Abstract: The invention provides a high capacity binary shuttle vector having T-DNA region and Ri ori and capable to integrate a large genome fragment in it; a genomic library having the ability to transform a plant, especially monocotyledonous ones; a plant transformed with the high capacity binary shuttle vector; and a method of searching for a useful gene by use of the above vector. The present high capacity binary shuttle vector can introduce a large genome fragment of 10 kb or more, easily, efficiently and stably into a plant, especially monocotyledonous ones under those conditions in which the rearrangement or deletion of these genome fragments does not occur. The invention also provides some other vectors derived from the above Ri ori driven vectors, which can integrate circular genome library plasmids with a lox site, or which can efficiently transform plants with genes of arbitrary expression properties.
    Type: Grant
    Filed: August 17, 2000
    Date of Patent: February 18, 2003
    Assignee: National Institute of Agrobiological Sciences
    Inventor: Shinji Kawasaki