Abstract: A light emitting apparatus (10) includes a substrate (100), an insulating layer (160), a light emitting element (102), a coating film (140), and a structure (150). The insulating layer (160) is formed over one surface of the substrate (100), and includes an opening (162). The light emitting element (102) is formed in the opening (162). The coating film (140) is formed over the one surface of the substrate (100), and covers a portion of the light emitting element (102), the insulating layer (160), and the one surface of the substrate (100). The coating film (140) does not cover another portion of the substrate (100) (for example, a portion of an end portion: hereinafter, referred to as a first portion). The structure (150) is located between the first portion of the substrate (100) and the insulating layer (160). The coating film (140) also covers the insulating layer (160).

Abstract: Provided are an active-matrix substrate, a method for manufacturing the same, and a display device, which render it possible to inhibit electrostatic discharge from occurring during the process of manufacturing a display panel and suppress manufacturing cost. An IGZO film, which is positioned between a silicon oxide film included in a gate insulating film and an etch-stop layer, is annealed at 200 to 350° C. after a passivation film for protecting a TFT is formed. As a result, the passivation film is annealed, and the IGZO film is changed from a conductor to a semiconductor. Consequently, it is not only possible to suppress the occurrence of ESD, but also possible to eliminate the need to sever an electrostatic discharge prevention circuit from a display panel, resulting in a reduced cost of manufacturing a display device.

Abstract: Provided is a method for manufacturing a semiconductor device, the semiconductor device including a substrate, and an oxide semiconductor TFT that is supported by the substrate and includes an oxide semiconductor film as an active layer. The method includes: (A) preparing MO gas containing a first organometallic compound that contains In and a second organometallic compound that contains Zn; and (B) supplying gas containing the MO gas and oxygen to the substrate placed in a chamber under a condition in which the substrate is heated to 500° C. or lower, and growing an oxide semiconductor film containing In and Zn on the substrate using an MOCVD method. Step (B) is performed under a condition in which plasma is formed in the chamber.

Abstract: A wiring delay is prevented or reduced by lowering a wiring resistance without making a wire wider. The present invention includes: a light blocking film (102); a light-transmitting film (106); and a first wiring layer (105A) which serves as part of a wire configured to electrically control an amount of transmitted light for each pixel, the first wiring layer (105A) being provided over the light blocking film (102), and the light-transmitting film (106) being provided over the first wiring layer (105A) so as to cover a side surface of the first wiring layer.

Abstract: To provide an organic EL element having good injection properties and transport properties of a carrier. Included are: an InGaZnO layer with a composition rich in In2O3 as a transparent electrode contacting a negative electrode; an InGaZnO layer with a stoichiometric ratio of In:Ga:Zn:O=1:1:1:4 as an electron injecting layer; and an InGaZnO layer with a composition rich in Ga2O3 as an electron transport layer contacting a light emitting layer.

Abstract: A light emitting apparatus (10) includes a substrate (100), an insulating layer (160), a light emitting element (102), a coating film (140), and a structure (150). The insulating layer (160) is formed over one surface of the substrate (100), and includes an opening (162). The light emitting element (102) is formed in the opening (162). The coating film (140) is formed over the one surface of the substrate (100), and covers a portion of the light emitting element (102), the insulating layer (160), and the one surface of the substrate (100). The coating film (140) does not cover another portion of the substrate (100) (for example, a portion of an end portion: hereinafter, referred to as a first portion). The structure (150) is located between the first portion of the substrate (100) and the insulating layer (160). The coating film (140) also covers the insulating layer (160).

Abstract: A light-emitting unit (140) is formed over a first surface (102) of a substrate (100). A first terminal (112) and a second terminal (132) are formed on the first surface (102) of the substrate (100), and are electrically connected to the light-emitting unit (140). A sealing layer (200) is formed over the first surface (102) of the substrate (100), and seals the light-emitting unit (140). In addition, the sealing layer (200) does not cover the first terminal (112) and the second terminal (132). A cover layer (210) is formed over the sealing layer (200), and is formed of a material different from that of the cover layer (210). In at least a portion of a region located next to the first terminal (112) and a region located next to the second terminal (132), a portion of an end of the cover layer (210) protrudes from the sealing layer (200).

Abstract: A light emitting apparatus (10) includes a substrate (100), an insulating layer (160), a light emitting element (102), a coating film (140), and a structure (150). The insulating layer (160) is formed over one surface of the substrate (100), and includes an opening (162). The light emitting element (102) is formed in the opening (162). The coating film (140) is formed over the one surface of the substrate (100), and covers a portion of the light emitting element (102), the insulating layer (160), and the one surface of the substrate (100). The coating film (140) does not cover another portion of the substrate (100) (for example, a portion of an end portion: hereinafter, referred to as a first portion). The structure (150) is located between the first portion of the substrate (100) and the insulating layer (160). The coating film (140) also covers the insulating layer (160).

Abstract: Provided are an active-matrix substrate, a method for manufacturing the same, and a display device, which render it possible to inhibit electrostatic discharge from occurring during the process of manufacturing a display panel and suppress manufacturing cost. An IGZO film, which is positioned between a silicon oxide film included in a gate insulating film and an etch-stop layer, is annealed at 200 to 350° C. after a passivation film for protecting a TFT is formed. As a result, the passivation film is annealed, and the IGZO film is changed from a conductor to a semiconductor. Consequently, it is not only possible to suppress the occurrence of ESD, but also possible to eliminate the need to sever an electrostatic discharge prevention circuit from a display panel, resulting in a reduced cost of manufacturing a display device.

Abstract: A wiring delay is prevented or reduced by lowering a wiring resistance without making a wire wider. The present invention includes: a light blocking film (102); a light-transmitting film (106); and a first wiring layer (105A) which serves as part of a wire configured to electrically control an amount of transmitted light for each pixel, the first wiring layer (105A) being provided over the light blocking film (102), and the light-transmitting film (106) being provided over the first wiring layer (105A) so as to cover a side surface of the first wiring layer.

Abstract: A light-emitting unit (140) is formed over a first surface (102) of a substrate (100). A first terminal (112) and a second terminal (132) are formed on the first surface (102) of the substrate (100), and are electrically connected to the light-emitting unit (140). A sealing layer (200) is formed over the first surface (102) of the substrate (100), and seals the light-emitting unit (140). In addition, the sealing layer (200) does not cover the first terminal (112) and the second terminal (132). A cover layer (210) is formed over the sealing layer (200), and is formed of a material different from that of the cover layer (210). In at least a portion of a region located next to the first terminal (112) and a region located next to the second terminal (132), a portion of an end of the cover layer (210) protrudes from the sealing layer (200).

Abstract: To provide an organic EL element having good injection properties and transport properties of a carrier. Included are: an InGaZnO layer with a composition rich in In2O3 as a transparent electrode contacting a negative electrode; an InGaZnO layer with a stoichiometric ratio of In:Ga:Zn:O=1:1:1:4 as an electron injecting layer; and an InGaZnO layer with a composition rich in Ga2O3 as an electron transport layer contacting a light emitting layer.

Abstract: A display device according to an embodiment of the present invention includes: one or a plurality of display elements provided in a display region; and an organic sealing film provided above the display element in the display region and a picture-frame region outside the display region, the organic sealing film being formed of an organic insulating material, the organic sealing film including, in at least a portion of the picture-frame region, a high surface portion whose surface is higher than a surface of the organic sealing film in the display region.

Abstract: A light emitting apparatus (10) includes a substrate (100), an insulating layer (160), a light emitting element (102), a coating film (140), and a structure (150). The insulating layer (160) is formed over one surface of the substrate (100), and includes an opening (162). The light emitting element (102) is formed in the opening (162). The coating film (140) is formed over the one surface of the substrate (100), and covers a portion of the light emitting element (102), the insulating layer (160), and the one surface of the substrate (100). The coating film (140) does not cover another portion of the substrate (100) (for example, a portion of an end portion: hereinafter, referred to as a first portion). The structure (150) is located between the first portion of the substrate (100) and the insulating layer (160). The coating film (140) also covers the insulating layer (160).

Abstract: A light emitting apparatus (10) includes a substrate (100), an insulating layer (160), a light emitting element (102), a coating film (140), and a structure (150). The insulating layer (160) is formed over one surface of the substrate (100), and includes an opening (162). The light emitting element (102) is formed in the opening (162). The coating film (140) is formed over the one surface of the substrate (100), and covers a portion of the light emitting element (102), the insulating layer (160), and the one surface of the substrate (100). The coating film (140) does not cover another portion of the substrate (100) (for example, a portion of an end portion: hereinafter, referred to as a first portion). The structure (150) is located between the first portion of the substrate (100) and the insulating layer (160). The coating film (140) also covers the insulating layer (160).

Abstract: An organic EL element (102) is formed on a substrate (100), and an insulating layer (120) surrounds the organic EL element (102). A conductive layer (300) is located between the substrate (100) and the insulating layer (120) in a thickness direction, and is across an edge (126) of the insulating layer (120) opposite the organic EL element (102). The conductive layer (300) includes a first layer (310) and a second layer (320). The second layer (320) is formed on the first layer (310). The conductive layer (300) does not include a portion of the second layer (320) in a portion overlapped with the edge (126) of the insulating layer (120).

Abstract: A light-emitting unit (140) is formed over a first surface (102) of a substrate (100). A first terminal (112) and a second terminal (132) are formed on the first surface (102) of the substrate (100), and are electrically connected to the light-emitting unit (140). A sealing layer (200) is formed over the first surface (102) of the substrate (100), and seals the light-emitting unit (140). In addition, the sealing layer (200) does not cover the first terminal (112) and the second terminal (132). A cover layer (210) is formed over the sealing layer (200), and is formed of a material different from that of the cover layer (210). In at least a portion of a region located next to the first terminal (112) and a region located next to the second terminal (132), a portion of an end of the cover layer (210) protrudes from the sealing layer (200).

Abstract: A light emitting device (10) includes a substrate (100), an organic EL element (102), a buffer film (210), and a sealing film (220). The organic EL element (102) is formed over the substrate (100). The sealing film (220) is located over the substrate (100) and over the organic EL element (102), and seals the organic EL element (102). In addition, the buffer film (210) is located between the organic EL element (102) and the sealing film (220), and comes into close contact with the sealing film (220). The sealing film (220) includes at least one layer formed of, for example, an oxide.

Abstract: An ultrasonic diagnosis device wherein a movable mechanism for supporting an operation panel is configured so that the degree of freedom in the position and attitude thereof is increased. Specifically, a movable section comprises the operation panel, a base, an arm mechanism, and a display unit. The movable mechanism has a lifting mechanism and a horizontal movement mechanism. The horizontal movement mechanism has a layered structure. The layered structure has, stacked from bottom to top, a left-right slide mechanism, a forward-backward slide mechanism, a rotation mechanism, and a rotation limitation mechanism. The rotation limitation mechanism changes a rotation range according to a sliding position in the forward-backward direction.

Abstract: A light emitting element (102) is formed on a substrate (100), and includes an organic layer (120). Terminals (112 and 132) are formed on the substrate (100), and are connected to the light emitting element (102). A protective film (140) covers the light emitting element (102) and the terminals (112 and 132). An intermediate layer (150) is provided between the terminal (112) and the protective film (140) and between the terminal (132) and the protective film (140). For example, the glass transition temperature or phase transition temperature of the intermediate layer (150) is lower than the glass transition temperature or phase transition temperature of the protective film (140).