Abstract: In a communication terminal apparatus such as a portable telephone apparatus, it is made possible to sound a ring tones of good tone quality simply by arbitrary music or the like. In a communication terminal that conducts radio communication with a predetermined station and incorporates a music or speech data reproduction function, a ring tones according to selected data included in previously prepared data for ring tones is outputted in response to call incoming, when a first mode has been set, whereas a ring tones according to data of a previously set section included in music or speech data stored in a reproduction function section is outputted, in response to call incoming, when a second mode has been set.

Abstract: When a radio communication is made between a predetermined base station and a communication terminal, the communication terminal is allowed to make a communication if a predetermined registration processing is made. If the above registration processing is not executed, then predetermined functions other than a communication function of the communication terminal are limited. Moreover, when a predetermined operation mode is set by an operation means, at least a transmission processing at a radio communication means is stopped and an execution of predetermined functions other than the radio communication processing is not restricted. Thus, when a communication terminal apparatus incorporates therein other functions than an audio reproducing function, operation of such function can be limited properly.

Abstract: A condensed-indan derivative represented by formula (1) and a pharmaceutically acceptable salt thereof: wherein ring A represents an optionally substituted benzene ring or naphthalene ring, or a benzene ring having a lower alkylenedioxy group, ring B represents an optionally substituted benzene ring or a benzene ring having a lower alkylenedioxy group. Y represents --N.dbd.CR-- or --CR.dbd.N--, R represents a --NR.sub.1 R.sub.2 group, an optionally substituted nitrogen-containing heterocyclic group or a --OR.sub.3 group, wherein R.sub.1 and R.sub.2 are the same or different and each is a hydrogen atom; a phenyl group; an optionally substituted nitrogen-containing heterocyclic group; or a lower alkyl group which may be substituted by at least one selected from the group consisting of an optionally substituted amino group, a lower alkoxy group, a phenyl group, a nitrogen-containing heterocyclic group, an amine oxide group substituted by a lower alkyl group or a hydroxyl group(s); R.sub.

Abstract: To prevent positional shifts of the image forming plane during the exposure process using the two-layer phase shift mask, the height position of the semiconductor wafer 14 is moved in the optical axis direction according to the mask substrate thickness of the second component mask 12b, prior to performing the exposure process which uses the stacked-layer mask 12 that comprises a first component mask 12a formed with a pattern of light-shielding areas and light-transmitting areas and a second component mask 12b formed with a phase shift pattern to produce a phase shift in the transmitted light.

Abstract: To prevent positional shifts of the image forming plane during the exposure process using the two-layer phase shift mask, the height position of the semiconductor wafer 14 is moved in the optical axis direction according to the mask substrate thickness of the second component mask 12b, prior to performing the exposure process which uses the stacked-layer mask 12 that comprises a first component mask 12a formed with a pattern of light-shielding areas and light-transmitting areas and a second component mask 12b formed with a phase shift pattern to produce a phase shift in the transmitted light.

Abstract: To prevent positional shifts of the image forming plane during the exposure process using the two-layer phase shift mask, the height position of the semiconductor wafer 14 is moved in the optical axis direction according to the mask substrate thickness of the second component mask 12b, prior to performing the exposure process which uses the stacked-layer mask 12 that comprises a first component mask 12a formed with a pattern of light-shielding areas and light-transmitting areas and a second component mask 12b formed with a phase shift pattern to produce a phase shift in the transmitted light.

Abstract: A photomask used for printing a mask pattern by projection optics, in which a main pattern formed of a transparent area is provided in a semitransparent area formed of a semitransparent film and a phase shifter, and the phase angles of light beams passing through respective areas are different from each other substantially by 180.degree.. The photomask is intended to prevent a reduction in a production yield due to a resolution failure of the photomask, and to prevent generation of an unnecessary projected image. In this photomask, a transparent auxiliary pattern having the same phase angle of light as that of the transparent area is disposed around a main pattern formed of the transparent area, and a distance D between the center or a desired center line of the main pattern and that of the auxiliary pattern satisfies the relationship of D=b.lambda./NAm , where NAm is a mask-side numerical aperture of a projection lens, .lambda.

Abstract: A condensed indan derivative represented by the formula (1) ##STR1## wherein the ring A is an optionally substituted benzene ring or a benzene ring which has lower alkylenedioxy group(s), the ring B is an optionally substituted benzene ring or a benzene ring which has lower alkylene dioxy group(s), and R is a group --NR.sub.1 R.sub.2, an optionally substituted nitrogen-containing heterocyclic group, a group --OR.sub.3 or a group --SR.sub.4 (wherein R.sub.1 and R.sub.2 are the same or different and each represent a hydrogen atom, a phenyl group, an optionally substituted nitrogen-containing heterocyclic group, or a lower alkyl group which may be substituted by optionally substituted amino group(s), lower alkoxy group(s), phenyl group(s), nitrogen-containing heterocyclic group(s) or hydroxyl group(s), and R.sub.3 and R.sub.

Abstract: Selective pattern exposure with high reliability is made possible by a desired pattern of repeated pattern and a non-repeated pattern. Exposure technology is obtained to enable improvement of preparation efficiency of pattern data and to secure inspection of an aperture pattern. With the invention, an electron beam is used as focused beam, and a pattern exposure apparatus of a batch transfer system for transferring repeated pattern and non-repeated pattern of plural graphics of a semiconductor integrated circuit or the like comprises an EB drawing section for controlling the beam and irradiating beam onto a sample, a control I/O section, a drawing control section and a data storage section. In the EB drawing section, a semiconductor wafer is mounted on a platform, and in the path of the electron beam from the electron beam source to the stage, a first mask, a blanking electrode, an electron lens, a first deflector, a second deflector, a second mask and a third deflector are installed.

Abstract: A condensed-indan derivative represented by formula (1) and a pharmaceutically acceptable salt thereof: ##STR1## wherein ring A represents an optionally substituted benzene ring or naphthalene ring, or a benzene ring having a lower alkylenedioxy group, ring B represents an optionally substituted benzene ring or a benzene ring having a lower alkylenedioxy group. Y represents --N.dbd.CR-- or --CR=N--, R represents a --NR.sub.1 R.sub.2 group, an optionally substituted nitrogen-containing heterocyclic group or a --OR.sub.3 group, wherein R.sub.1 and R.sub.2 are the same or different and each is a hydrogen atom; a phenyl group; an optionally substituted nitrogen-containing heterocyclic group; or a lower alkyl group which may be substituted by at least one selected from the group consisting of an optionally substituted amino group, a lower alkoxy group, a phenyl group, a nitrogen-containing heterocyclic group, an amine oxide group substituted by a lower alkyl group or a hydroxyl group(s); R.sub.

Abstract: A condensed-indan derivative represented by formula (1) and a pharmaceutically acceptable salt thereof: ##STR1## wherein ring A represents an optionally substituted naphthalene ring, ring B represents an optionally substituted benzene ring or a benzene ring having a lower alkylenedioxy group. Y represents --N.dbd.CR-- or --CR.dbd.N--, R represents a --NR.sub.1 R.sub.2 group, an optionally substituted nitrogen-containing heterocyclic group or a --OR.sub.3 group, wherein R.sub.1 and R.sub.2 are the same or different and each is a hydrogen atom; a phenyl group; an optionally substituted nitrogen-containing heterocyclic group; or a lower alkyl group which may be substituted by at least one selected from the group consisting of an optionally substituted amino group, a lower alkoxy group, a phenyl group, a nitrogen-containing heterocyclic group, an amine oxide group substituted by a lower alkyl group or a hydroxyl group(s); R.sub.3 represents a lower alkyl group optionally substituted by a substituted amino group.

Abstract: A photomask used for printing a mask pattern by projection optics, in which a main pattern formed of a transparent area is provided in a semitransparent area formed of a semitransparent film and a phase shifter, and the phase angles of light beams passing through respective areas are different from each other substantially by 180.degree.. The photomask is intended to prevent a reduction in a production yield due to a resolution failure of the photomask, and to prevent generation of an unnecessary projected image. In this photomask, a transparent auxiliary pattern having the same phase angle of light as that of the transparent area is disposed around a main pattern formed of the transparent area, and a distance D between the center or a desired center line of the main pattern and that of the auxiliary pattern satisfies the relationship of D=b.lambda./NAm , where NAm is a mask-side numerical aperture of a projection lens, .lambda.

Abstract: To prevent positional shifts of the image forming plane during the exposure process using the two-layer phase shift mask, the height position of the semiconductor wafer 14 is moved in the optical axis direction according to the mask substrate thickness of the second component mask 12b, prior to performing the exposure process which uses the stacked-layer mask 12 that comprises a first component mask 12a formed with a pattern of light-shielding areas and light-transmitting areas and a second component mask 12b formed with a phase shift pattern to produce a phase shift in the transmitted light.

Abstract: An object of this invention is to provide a method of previously calculating the thickness of each of portions of a wiring harness to be produced prior to actually producing the wiring harness. A wiring harness constructed by bundling electric wires of a plurality of types which differ in diameter is assumed as having been converted to a bundle of electric wires of a single type with respect to the electric wires of each type, to find the number of electric wires. The perimeters and the diameters of the bundles of electric wires whose number is found are calculated for electric wires of each type, and the respective average values are respectively regarded as the perimeter and the diameter of the wiring harness. Thus, the thickness of a wiring harness can be approximately calculated in accordance with electric wires constituting the wiring harness.

Abstract: Disclosed is a pattern forming method including the steps of preparing second grating stripes disposed near a reticle having a mask pattern to be projected, modulating the mask pattern by emission of a light, and demodulating the modulated mask pattern by first grating stripes formed within a photosensitive film made of a material capable of reversibly inducing photochemical reaction, thereby forming the modulated image of the mask pattern within a resist film disposed under the photosensitive film. With this method, various kinds of fine patterns each being smaller than the resolution limit of a projection exposure tool used are formed.

Abstract: Selective pattern exposure with high reliability is made possible by a desired pattern of repeated pattern and a non-repeated pattern. Exposure technology is obtained to enable improvement of preparation efficiency of pattern data and to secure inspection of an aperture pattern. With the invention, an electron beam is used as focused beam, and a pattern exposure apparatus of a batch transfer system for transferring repeated pattern and non-repeated pattern of plural graphics of a semiconductor integrated circuit or the like comprises an EB drawing section for controlling the beam and irradiating beam onto a sample, a control I/O section, a drawing control section and a data storage section. In the EB drawing section, a semiconductor wafer is mounted on a platform, and in the path of the electron beam from the electron beam source to the stage, a first mask, a blanking electrode, an electron lens, a first deflector, a second deflector, a second mask and a third deflector are installed.

Abstract: In forming a thin film pattern, first a seed material film is formed on a substrate and then exposed using electron beam lithography, for example, in the shape of the pattern. The latent image is then removed and an oriented material is deposited on one of the seed material and the substrtate, which have different hydrophilicity properties, to form the pattern. The oriented film is formed by an LB film forming method, in one example, and in another example the LB film material is a cresol novolak resin having a proportion of p-cresol novolak to m-cresol novolak of at least 20%.

Abstract: A system and method are provided for compensating for proximity effects between selected adjacent portions of pattern elements on an integrated circuit wafer where it is determined by simulation that undesirable resist patterns will result. The subject lithography system includes projecting an electron beam onto the wafer through an aperture plate of pattern elements to obtain the desired beam pattern. An aperture mask includes a plurality of first portions corresponding to first wafer circuit element portions spaced for avoiding proximity effects on the wafer and a plurality of second portions corresponding to second element portions spaced for obtaining proximity effects between elements on the wafer. The plurality of second portions are sized to have an increased adjacent spacing relative to a resultant adjacent spacing of the corresponding second element portions whereby the resultant adjacent spacing of the second element portions on the wafer is selectively reduced by the proximity effects.

Abstract: A high density storage medium which stores predetermined information by matching it on one-to-one basis with multiple levels of depth or height formed in predetermined plural areas of substrate surface, a storing method, a reading method and various systems using them have been disclosed.

Abstract: An electron beam lithography system and method which provide an in-plane current density distribution of an electron beam focussed onto a specimen so as to prevent a proximity effect and space charge effect.