Abstract: A panel retention structure includes a retention member including a head portion, a neck portion and a flange portion being provided in the aforementioned order from an end of the retention member. The neck portion includes a dimension which is set smaller than a dimension of a first hole and a dimension of a second hole, and passes through the first hole and the second hole. The head portion is in contact with a confronting surface serving as a surface of a retention wall facing a panel body in one of a state where the head portion is elastically in contact with the panel body, and a state where an elastic wall being elastically in contact with an opposing surface serving as a surface of the retention wall which opposes the panel body is provided.

Abstract: An inverter driver includes: a switching device; a drive circuit driving the switching device; a current detection device generating a voltage signal corresponding to a current flowing through the switching device; a noise filter removing noise superposed on the voltage signal; an excess current detection circuit outputting an excess current detection signal when the voltage signal input via the noise filter exceeds a first threshold value; and a short circuit detection circuit outputting an error signal when the excess current detection signal is input or the voltage signal input by bypassing the noise filter exceeds a second threshold value.

Abstract: To provide a discharge tube having improved stability of operating voltage to repeated discharges. The discharge tube includes a cylindrical insulating hollow body having openings at least at both ends and at least a pair of sealing electrodes facing to each other for closing the openings so as to seal a discharge control gas inside the body, wherein a discharge trigger film made of a conductive material is formed on the inner circumferential surface of the insulating hollow body, each of the sealing electrodes has a convex portion projecting into the insulating hollow body and a discharge active layer(s) that is/are made of a material having higher electron emission characteristics than that of the sealing electrodes.

Abstract: A sunroof device includes a sunroof unit, a looped first seal, and a second seal. The sunroof unit supports a panel capable of closing an opening of a roof of a vehicle. The sunroof unit includes a frame provided with two guide rails placed on two edges of the opening in a vehicle widthwise direction and two housings placed on two edges of the opening in a vehicle front-to-rear direction to connect front ends of the two guide rails to each other and rear ends of the two guide rails to each other in the vehicle widthwise direction. The first seal is arranged between an entire periphery of the opening and the frame. The second seal is arranged between opposing surfaces of the guide rails and the housings at portions where the guide rails are coupled to the housings. The second seal is butt against the first seal.

Abstract: A sunroof device includes support members, which are attached to a movable panel, sliding members, which are slidable along guide rails, movable members, rotating bodies, two front-side rack gears, and two rear-side rack gears. Each movable member is fixed to one of the sliding members and supported by the corresponding one of the support members to be movable. Front and rear-side rotating bodies are respectively supported by front and rear portions of the movable panel. The front-side rack gears are coupled to the front-side rotating body such that the distances from the center of the movable panel to the front ends of the two movable members are equal. The rear-side rack gears are coupled to the rear-side rotating body such that distances from the center of the movable panel to the rear ends of the two movable members are equal.

Abstract: To provide a technique to complement overcurrent protection and short circuit protection. An LVIC includes an overcurrent detector configured to detect whether or not a first current flowing through a load and a semiconductor switching element is abnormal and a short-circuit detector configured to detect whether or not a second current flowing not through the load but through the semiconductor switching element is abnormal. The LVIC interrupts the semiconductor switching element based on a detection result of the overcurrent detector and a detection result of the short-circuit detector.

Abstract: Provided is a technique for reducing the size and cost of a semiconductor device. A semiconductor device includes an IGBT module having an IGBT, and a MOSFET module having a MOSFET whose operational property is different from that of the IGBT, the MOSFET module being connected to the IGBT module in parallel. The semiconductor device is capable of selectively executing an operation mode in which switching timing in the IGBT module and switching timing in the MOSFET module are non-identical.

Abstract: A surge protective device of the present invention includes an insulating tube, a pair of sealing electrodes for closing openings on both ends of the insulating tube so as to seal a discharge control gas inside the tube, wherein the pair of sealing electrodes has a pair of convex electrode portions projecting inwardly so as to face to each other, and at least one groove part extending in a circumferential direction is formed on the inner circumferential surface of the insulating tube.

Abstract: A panel retention structure includes a retention member including a head portion, a neck portion and a flange portion being provided in the aforementioned order from an end of the retention member. The neck portion includes a dimension which is set smaller than a dimension of a first hole and a dimension of a second hole, and passes through the first hole and the second hole.

Abstract: A high-side gate drive circuit includes pulse generating circuits that generate a first pulse synchronized with an input signal, and level shift circuits that shift a level of a reference voltage for the first pulse to a power supply voltage of a high-side switching element. The level shift circuits include MOSFETs to be driven by the first pulse. The high-side gate drive circuit includes a mask signal generating circuit that generates a mask signal that becomes a high level in a period in which source potential of the MOSFETs becomes a high level, and reshot circuits that input, when the first pulse is input into the level shift circuits during a mask period that is a period in which the mask signal is a high level, a second pulse into the level shift circuits after the mask period.

Abstract: A control circuit includes an inverter circuit including a high-side MOSFET and a low-side MOSFET connected to form a totem-pole, a first gate driver configured to switch the low-side MOSFET, a second gate driver configured to switch the high-side MOSFET, a bootstrap circuit configured to supply a voltage to the second gate driver, and a detection section configured to issue an anomaly signal when a current larger than a predetermined value flows in the inverter circuit. In response to the issuing of the anomaly signal, the low-side MOSFET is turned off, and the high-side MOSFET is turned off. After that, in a state in which a freewheeling current is flowing through the low-side MOSFET, the low-side MOSFET is turned on to prevent a bootstrap capacitor of the bootstrap circuit from being overcharged.

Abstract: A sunroof device includes support members, which are attached to a movable panel, sliding members, which are slidable along guide rails, movable members, rotating bodies, two front-side rack gears, and two rear-side rack gears. Each movable member is fixed to one of the sliding members and supported by the corresponding one of the support members to be movable. Front and rear-side rotating bodies are respectively supported by front and rear portions of the movable panel. The front-side rack gears are coupled to the front-side rotating body such that the distances from the center of the movable panel to the front ends of the two movable members are equal. The rear-side rack gears are coupled to the rear-side rotating body such that distances from the center of the movable panel to the rear ends of the two movable members are equal.

Abstract: To provide a surge protective device that can suppress the sublimation and disappearance of a discharge-assisting part and can improve the durability thereof. The surge protective device comprises an insulating tube, a pair of sealing electrodes for closing openings on the both ends of the insulating tube so as to seal a discharge control gas inside the tube, and a discharge-assisting part formed on the inner circumferential surface of the insulating tube, wherein the pair of sealing electrodes have a pair of convex electrode portions projecting inwardly and facing to each other, and the discharge-assisting part is composed of a laminate of an insulating layers made of an insulating material and ion-source layers made of an ion-source material that are formed on the top and bottom surfaces of the insulating layer.

Abstract: A sunroof device includes a sunroof unit, a looped first seal, and a second seal. The sunroof unit supports a panel capable of closing an opening of a roof of a vehicle. The sunroof unit includes a frame provided with two guide rails placed on two edges of the opening in a vehicle widthwise direction and two housings placed on two edges of the opening in a vehicle front-to-rear direction to connect front ends of the two guide rails to each other and rear ends of the two guide rails to each other in the vehicle widthwise direction. The first seal is arranged between an entire periphery of the opening and the frame. The second seal is arranged between opposing surfaces of the guide rails and the housings at portions where the guide rails are coupled to the housings. The second seal is butt against the first seal.

Abstract: A control circuit includes an inverter circuit including a high-side MOSFET and a low-side MOSFET connected to form a totem-pole, a first gate driver configured to switch the low-side MOSFET, a second gate driver configured to switch the high-side MOSFET, a bootstrap circuit configured to supply a voltage to the second gate driver, and a detection section configured to issue an anomaly signal when a current larger than a predetermined value flows in the inverter circuit. In response to the issuing of the anomaly signal, the low-side MOSFET is turned off, and the high-side MOSFET is turned off. After that, in a state in which a freewheeling current is flowing through the low-side MOSFET, the low-side MOSFET is turned on to prevent a bootstrap capacitor of the bootstrap circuit from being overcharged.

Abstract: To provide a discharge tube having improved stability of operating voltage to repeated discharges. The discharge tube includes a cylindrical insulating hollow body having openings at least at both ends and at least a pair of sealing electrodes facing to each other for closing the openings so as to seal a discharge control gas inside the body, wherein a discharge trigger film made of a conductive material is formed on the inner circumferential surface of the insulating hollow body, each of the sealing electrodes has a convex portion projecting into the insulating hollow body and a discharge active layer(s) that is/are made of a material having higher electron emission characteristics than that of the sealing electrodes.

Abstract: The present technique relates to a protection circuit for a MOSFET and a protection circuit system including the protection circuit all of which can reduce losses in the main current and increase in the manufacturing costs for ensuring a sense area. The protection circuit includes: a first MOSFET for power through which a main current flows; an IGBT which is connected in parallel to the first MOSFET and through which a current diverted from the main current flows; a sense resistor connected in series with the IGBT; and a first control circuit that controls a gate voltage of the first MOSFET based on a value of a voltage to be applied to the sense resistor, wherein a ratio of the diverted current flowing through the IGBT to the main current flowing through the first MOSFET in current value ranges from 0.018% to 0.022%.

Abstract: An object is to provide a preparation for forming emboli highly safe in a living body and capable of retaining and controlled-releasing an anticancer agent, occluding a blood vessel when injected into the blood vessel, unlikely to be washed out and having a controlled decomposition time (i.e., occludes a blood vessel for a while and quickly decomposes to prevent the necrosis of the entire tissues when the function is completed). The preparation for forming emboli according to the present invention comprises a solution comprising a phenolic hydroxyl group-modified polymer represented by the following formula (1): wherein P is a biocompatible polymer, A is a single bond or an —OCO—C2-C4-alkenylene group, a —CONH—C1-C4-alkylene group or an —HNCO—C1-C4-alkylene group, and X is hydrogen or a C1-C3-alkoxy group, a solution comprising at least one selected from a peroxidase, a laccase, a tyrosinase, a catalase and an iron porphyrin complex and a solution comprising hydrogen peroxide.

Abstract: A semiconductor module includes a voltage generator, and a heat dissipating mechanism composed of, for example, an insulating heat dissipating sheet and a heat sink. The voltage generator is capable of generating, by using a built-in linear regulator function, a power source voltage to drive a boost converter based on a voltage boosted by the boost converter. The voltage generator is mounted on the heat dissipating mechanism.

Abstract: A transistor being one of an IGBT and a MOSFET and arranged near a gate control circuit applies a gate control signal from the gate control circuit to the gate of a transistor arranged far from the gate control circuit. A gate control signal is applied via a resistive element to the transistor arranged near the gate control circuit.