Abstract: An air conditioner includes a refrigerant circuit in which indoor units are connected to an outdoor unit. The conditioner includes a a processor to detect a state quantity related to control on the air conditioner, acquire a detected value of the detected quantity and estimate occurrence of abnormality of the circuit by using a detected value of a feature value by assuming that the quantity related to abnormality of the circuit is adopted as the feature value. The estimating adopts the outdoor unit and each of the indoor units as a single pair, estimates occurrence of abnormality in the circuit for each of the pairs, estimates that abnormality has occurred in the indoor unit of a subject pair when estimating that abnormality has occurred in any of the pair, and estimates that abnormality has occurred in the outdoor unit when estimating that abnormality has occurred in all of the pairs.

Abstract: A vibration monitoring device includes: a rotation sensor for outputting a rotation signal synchronized with rotation of a rotational shaft; an output device for outputting a filter command value corresponding to a rotation speed of the rotational shaft calculated from the rotation signal; and at least one filter for extracting, in response to input of the rotation signal and the filter command value, a signal in a passband set according to the filter command value from the rotation signal as a vibration signal from which vibration information of the rotational shaft can be obtained.

Abstract: A three-dimensional measuring apparatus includes a projection unit that projects a pattern onto a subject, a plurality of image capturing units that capture images of the subject from mutually different points of view, and a processing unit that calculates a distance value to the subject by performing association using image groups captured of the subject by the plurality of image capturing units, wherein the processing unit integrates information based on a first image group that was captured by projecting the pattern onto the subject, and information based on a second image group that was captured without projecting the pattern onto the subject, into integrated images or evaluation values to be used during the association such that features of the images from both the first image group and the second image group remain, and calculates the distance value using the integrated images that have been integrated or the evaluation values.

Abstract: The liquid crystal display device of the present invention includes an active matrix substrate including a first electrode, a first insulating layer, and second electrodes including a first linear electrode; a color filter substrate including a black matrix, a color filter layer, a third electrode including second linear electrodes, and a fourth electrode which is a floating electrode. The third electrode and the fourth electrode are disposed between the black matrix and the liquid crystal layer. The second linear electrodes extend in a second direction and each overlap a portion of the black matrix extending in the second direction. The fourth electrode is disposed between the second linear electrodes and overlaps the black matrix in a plan view. The control circuit switches between application of driving voltage and application of constant voltage to the third electrode.

Abstract: A microwavable frozen steamed dumpling including a noodle-strip food and a batter, the batter containing water in an amount of at least 70 wt. %, based on a total weight of the batter, thereby enabling microwaving from a frozen state to provide cooked steamed dumplings with excellent mouthfeel, textural properties, and appearance. Also provided is a method of making the microwavable frozen steamed dumpling whereby the noodle-strip food is contacted with the batter and subsequently frozen to form the microwavable frozen steamed dumpling, and a method of preparing a cooked steamed dumpling whereby the microwavable frozen steamed dumpling is heated in a microwave oven.

Abstract: In an alcohol detection system, face authentication is performed on a person to be measured before an alcohol detection device starts measurement, and the success of the face authentication performed on the person to be measured triggers the acquisition of camera image information that are images of the face of the person to be measured continuously shot by a camera. In other words, when the face authentication performed on the person to be measured succeeds, the person to be measured starts alcohol detection and images of the face of the person to be measured are continuously shot during the measurement.

Abstract: An aluminium gallium indium phosphide (AlGaInP)-based semiconductor laser device is provided. On a main surface of a semiconductor substrate formed of n-type GaAs (gallium arsenide), from the bottom layer, an n-type buffer layer, an n-type cladding layer formed of an AlGaInP-based semiconductor containing silicon (Si) as a dopant, an active layer, a p-type cladding layer formed of an AlGaInP-based semiconductor containing magnesium (Mg) or zinc (Zn) as a dopant, an etching stopper layer, and a p-type contact layer are formed. Here, when an Al composition ratio x of the AlGaInP-based semiconductor is taken as a composition ratio of Al and Ga defined as (AlxGa1-x)0.5In0.5P, a composition of the n-type cladding layer is expressed as (AlxnGa1-xn)0.5In0.5P (0.9<xn<1) and a composition of the p-type cladding layer is expressed as (AlxpGa1-xp)0.5In0.5P (0.9<xp?1), and xn and xp satisfy a relationship of xn<xp.

Abstract: To provide a semiconductor optical device with device resistance reduced for optical communication. The semiconductor optical device includes an active layer (306) for emitting light through recombination of an electron and a hole; a diffraction grating (309) having a pitch defined in accordance with an output wavelength of the light emitted; a first semiconductor layer (311) including at least Al, made of In and group-V compound, and formed on the diffraction grating; and a second semiconductor layer (307) including Mg, made of In and group-V compound, and formed on the first semiconductor layer (311).

Abstract: An aluminium gallium indium phosphide (AlGaInP)-based semiconductor laser device is provided. On a main surface of a semiconductor substrate formed of n-type GaAs (gallium arsenide), from the bottom layer, an n-type buffer layer, an n-type cladding layer formed of an AlGaInP-based semiconductor containing silicon (Si) as a dopant, an active layer, a p-type cladding layer formed of an AlGaInP-based semiconductor containing magnesium (Mg) or zinc (Zn) as a dopant, an etching stopper layer, and a p-type contact layer are formed. Here, when an Al composition ratio x of the AlGaInP-based semiconductor is taken as a composition ratio of Al and Ga defined as (AlxGa1-x)0.5In0.5P, a composition of the n-type cladding layer is expressed as (AlxnGa1-xn)0.5In0.5P (0.9<xn<1) and a composition of the p-type cladding layer is expressed as (AlxpGa1-xp)0.5In0.5P (0.9<xp?1), and xn and xp satisfy a relationship of xn<xp.

Abstract: According to one embodiment, a magnetic head includes a write element, a read element, and a heating element disposed between the write element and the read element. When power is applied to the heating element, either the read element or the write element projects beyond a plane of an air-bearing surface (ABS) of the magnetic head, and when power is not applied to the heating element, a portion of the ABS of the magnetic head facing a magnetic disk close to the heating element has a concave shape. In another embodiment, when power is applied to the heating element, at least one of a portion of the read element and a portion of the write element approaches a magnetic disk, and when power is not applied to the heating element, a portion of the ABS of the magnetic head facing a magnetic disk close to the heating element has a concave shape.

Abstract: An aluminium gallium indium phosphide (AlGaInP)-based semiconductor laser device is provided. On a main surface of a semiconductor substrate formed of n-type GaAs (gallium arsenide), from the bottom layer, an n-type buffer layer, an n-type cladding layer formed of an AlGaInP-based semiconductor containing silicon (Si) as a dopant, an active layer, a p-type cladding layer formed of an AlGaInP-based semiconductor containing magnesium (Mg) or zinc (Zn) as a dopant, an etching stopper layer, and a p-type contact layer are formed. Here, when an Al composition ratio x of the AlGaInP-based semiconductor is taken as a composition ratio of Al and Ga defined as (AlxGa1?x)0.5In0.5P, a composition of the n-type cladding layer is expressed as (AlxnGa1?xn)0.5In0.5P (0.9<xn<1) and a composition of the p-type cladding layer is expressed as (AlxpGa1?xp)0.5In0.5P (0.9<xp?1), and xn and xp satisfy a relationship of xn<xp.

Abstract: In one embodiment, a device includes a near-field light transducer having multiple apexes including a trailing-side apex positioned on a trailing side of the near-field light transducer. The device also includes a first material positioned near the trailing-side apex of the near-field light transducer, and a second material positioned near another apex of the near-field light transducer. The first material is physically characterized as etching more slowly than the second material.

Abstract: In one embodiment, a device includes a near-field light transducer having multiple apexes including a trailing-side apex positioned on a trailing side of the near-field light transducer. The device also includes a first material positioned near the trailing-side apex of the near-field light transducer, and a second material positioned near another apex of the near-field light transducer. The first material is physically characterized as etching more slowly than the second material.

Abstract: A flexure element used in a load cell comprises a rectangular strain region, two first arms, a first connection portion, which is connected to one end of the strain region and the first arms, two second arms, and a second connection portion which is connected to the other end of the strain region and the second arms, wherein one of the pair of first arms and the pair of second arms receives a load in a direction perpendicular to the flexure element, and the other of the pair of first arms and the pair of second arms is fixed to a support body, and a gap between the first arm and the second arm and a gap between the second arm and the strain region are equal to or smaller than a half of the thickness.

Abstract: To provide a semiconductor optical device with device resistance reduced for optical communication. The semiconductor optical device includes an active layer (306) for emitting light through recombination of an electron and a hole; a diffraction grating (309) having a pitch defined in accordance with an output wavelength of the light emitted; a first semiconductor layer (311) including at least Al, made of In and group-V compound, and formed on the diffraction grating; and a second semiconductor layer (307) including Mg, made of In and group-V compound, and formed on the first semiconductor layer (311).

Abstract: In one embodiment, a device includes a light source, a near-field light transducer including an electroconductive scattering body configured for generating near-field light when irradiated by light from the light source, the near-field light transducer including a triangular shape at a media-facing surface thereof having three apexes including a trailing-side apex positioned on a trailing side of the near-field light transducer, a main pole configured for writing data to a magnetic medium, the main pole being positioned in a down-track direction from the near-field light transducer, a first material positioned near the trailing-side apex of the near-field light transducer, and a second material positioned near other apexes of the near-field light transducer, the first material being more difficult to etch than the second material, wherein the near-field light transducer is configured to assist the main pole in writing data to the magnetic medium by production of the near-field light.

Abstract: In one embodiment, a device includes a light source, a near-field light transducer including an electroconductive scattering body configured for generating near-field light when irradiated by light from the light source, the near-field light transducer including a triangular shape at a media-facing surface thereof having three apexes including a trailing-side apex positioned on a trailing side of the near-field light transducer, a main pole configured for writing data to a magnetic medium, the main pole being positioned in a down-track direction from the near-field light transducer, a first material positioned near the trailing-side apex of the near-field light transducer, and a second material positioned near other apexes of the near-field light transducer, the first material being more difficult to etch than the second material, wherein the near-field light transducer is configured to assist the main pole in writing data to the magnetic medium by production of the near-field light.

Abstract: An aluminium gallium indium phosphide (AlGaInP)-based semiconductor laser device is provided. On a main surface of a semiconductor substrate formed of n-type GaAs (gallium arsenide), from the bottom layer, an n-type buffer layer, an n-type cladding layer formed of an AlGaInP-based semiconductor containing silicon (Si) as a dopant, an active layer, a p-type cladding layer formed of an AlGaInP-based semiconductor containing magnesium (Mg) or zinc (Zn) as a dopant, an etching stopper layer, and a p-type contact layer are formed. Here, when an Al composition ratio x of the AlGaInP-based semiconductor is taken as a composition ratio of Al and Ga defined as (AlxGa1-x)0.5In0.5P, a composition of the n-type cladding layer is expressed as (AlxGa1-x)0.5In0.5P (0.9<xn<1) and a composition of the p-type cladding layer is expressed as (AlxpGa1-xp)0.5In0.5P (0.9<xp?1), and xn and xp satisfy a relationship of xn<xp.

Abstract: A flexure element used for weight measurement includes a load-applied part to which load is applied, a supported part supported by a supporter, and a flexure part connected to the load-applied part and the supported part, strain gauges being attached to the flexure part. The load-applied part, the supported part, and the flexure part include surfaces that lie on the same plane. The thickness of the flexure part is less than the thickness of the load-applied part and the thickness of the supported part. The flexure part has a recess at a side opposite to the plane, the recess being located between the load-applied part and the supported part.

Abstract: A flexure element used in a load cell comprises a rectangular strain region, two first arms, a first connection portion, which is connected to one end of the strain region and the first arms, two second arms, and a second connection portion which is connected to the other end of the strain region and the second arms, wherein one of the pair of first arms and the pair of second arms receives a load in a direction perpendicular to the flexure element, and the other of the pair of first arms and the pair of second arms is fixed to a support body, and a gap between the first arm and the second arm and a gap between the second arm and the strain region are equal to or smaller than a half of the thickness.