Abstract: A pattern forming method performs a multiple exposure process, the multiple exposure process comprising: exposing a resist film with actinic rays or radiation a plurality of times, wherein a contact angle of the resist film for water is 75° or more.

Abstract: A chemical amplification resist composition comprising (A) a resin increasing the solubility in an alkali developer by the action of an acid, (B) a compound capable of generating an acid upon irradiation with actinic ray or radiation, (C) a compound having a fluorine atom and a hydroxyl group, and a pKa value of from 4 to 15, and (D) a solvent, and a pattern-forming method using the same.

Abstract: The invention provides a positive resist composition suitably usable at the time of using an ArF excimer laser light as the exposure light source, assured of excellent performance in view of resist profile, sensitivity, resolution and line edge roughness, and free from occurrence of pattern falling and development defect, and a pattern forming method using the composition, which are a positive resist composition comprising (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation, (B) a resin having an alicyclic hydrocarbon structure, which decomposes under the action of an acid to increase the solubility in an alkali, and (C) a chain compound having one or two group(s) selected from a hydroxyl group and a group where the hydrogen atom of a hydroxyl group is substituted with an organic group, in which the chain compound is a solid at ordinary temperature under atmospheric pressure, and a pattern forming method using the composition.

Abstract: A production process of a chemical amplification-type resist composition, which is a process for producing a chemical amplification-type composition comprising: (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (B) a resin of which solubility in an alkali developer is changed under an action of an acid; (C) a basic compound; (D) a surfactant; and (E) a solvent, the production process comprising: preparing a solution containing the component (A); and mixing the solution containing the component (A) with the components (B) to (E), and a chemical amplification-type resist composition produced by the production process.

Abstract: A pattern forming method comprising: coating a resist composition on a substrate; adjusting a rotational speed of the substrate within a range of 500 to 1,500 rpm so that a film thickness of the resist composition coated is adjusted; and subjecting the resist composition to drying, exposure and development, wherein the resist composition includes: (A) a compound capable of generating an acid upon irradiation with one of actinic rays and radiation; (B) a resin of which dissolution rate in an alkali developer increases under the action of an acid; (C) a mixed solvent; and (D) a surfactant, and the mixed solvent (C) includes at least one member selected from a group A of solvents and at least one member selected from a group B of solvents, or includes at least one member selected from the group A of solvents and at least one member selected from a group C of solvents: Group A: propylene glycol monoalkyl ether carboxylates, Group B: propylene glycol monoalkyl ethers, alkyl lactates, acetic acid esters, one of cha

Abstract: A production process of a chemical amplification-type resist composition, which is a process for producing a chemical amplification-type composition comprising: (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (B) a resin of which solubility in an alkali developer is changed under an action of an acid; (C) a basic compound; (D) a surfactant; and (E) a solvent, the production process comprising: preparing a solution containing the component (A); and mixing the solution containing the component (A) with the components (B) to (E), and a chemical amplification-type resist composition produced by the production process.

Abstract: A micropattern forming material is formed on a resist pattern containing an acidic group. The micropattern forming material comprises a compound that penetrates the resist pattern. The penetration of the compound causes the resist pattern to form a crosslinked layer and thereby swell resulting in formation of a film insoluble in water or alkali.

Abstract: The invention provides a positive resist composition suitably usable at the time of using an ArF excimer laser light as the exposure light, source, assured of excellent performance in view of resist profile, sensitivity, resolution and line edge roughness, and free from occurrence of pattern falling and development defect, and a pattern forming method using the composition, which are a positive resist composition comprising (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation, (B) a resin having an alicyclic hydrocarbon structure, which decomposes under the action of an acid to increase the solubility in an alkali, and (C) a chain compound having one or two group(s) selected from a hydroxyl group and a group where the hydrogen atom of a hydroxyl group is substituted with an organic group, in which the chain compound is a solid at ordinary temperature under atmospheric pressure, and a pattern forming method using the composition.

Abstract: A chemical amplification resist composition comprising (A) a resin increasing the solubility in an alkali developer by the action of an acid, (B) a compound capable of generating an acid upon irradiation with actinic ray or radiation, (C) a compound having a fluorine atom and a hydroxyl group, and a pKa value of from 4 to 15, and (D) a solvent, and a pattern-forming method using the same.

Abstract: A developer and a method of a developing process which improve upon uniformity in a size of a resist pattern are provided. The developer includes a wafer rotating system (10) and a wafer oscillating system (20) which oscillates whole of the wafer rotating system (10) in one-dimensional direction, and the wafer oscillating system (20) has a motor supporting part (4) which mounts and fixes a motor part (1), a rail (5) which engages a rail groove (41) formed on a bottom side of the motor supporting part (4) and also enables the motor supporting part (4) to slide smoothly in one-dimensional direction, a guide bar (6) which is coupled with the motor part (1) and transmits a propulsion which enables the motor part (1) to slide along the rail (5) and a linear motor part (7) which engages the guide bar (6) and is a propulsion supplying source which supplies the propulsion with the wafer rotating system (10) by sliding the guide bar (6) in the axial direction of the guide bar (6).

Abstract: A micropattern forming material comprising a water-soluble component, water and/or an organic solvent miscible with water is used. The water-soluble component is made of at least one selected from the group water-soluble monomers, water-soluble oligomers, copolymers of water-soluble monomers and salts thereof, having a functional group reactable with a carboxyl group. The micropattern forming material is formed on a resist pattern 4 capable of supplying an acid, and a film 6 insoluble in water or an alkali is formed through crosslinking reaction of the water-soluble component at a portion in contact with the resist pattern 4 by the action of the acid from the resist pattern.

Abstract: A micropattern forming material comprises a polar change material formed on a resist pattern capable of generating an acid, the polar change material being soluble in water or an alkali, a portion of the polar change material in contact with the resist pattern undergoing a polar change caused by the acid from the resist pattern to form an insolubilized film insoluble in water and the alkali; and water or a mixed solvent of water and a water-soluble organic solvent.

Abstract: A resist pattern formation method is characterized in that, after a resist pattern is formed on a wafer, a residue generated between resist sidewalls forming the resist pattern is irradiated with an electron beam under a reduced pressure. It is also preferable to detect the residue with pattern defect inspection equipment, and irradiate the detected residue site with an electron beam under a reduced pressure using an electron microscope. The reduced pressure is preferably equal to or lower than 5.0×102 Pa, and an acceleration voltage is preferably equal to or lower than 1200 V. A manufacturing method of a semiconductor device according to the present invention uses the above-described formation method to form a resist pattern. Thus, the residue generated between resist sidewalls can be removed without varying a dimension of a resist pattern spacing.

Abstract: A developer and a method of a developing process which improve upon uniformity in a size of a resist pattern are provided.

Abstract: An automatic disc changer has a casing for the automatic disc changer, and a plurality of disc holders arranged in the casing. The disc holder stores a plurality of discs in vertical position so that each disc can be removed from the disc holder. A plurality of reproducing devices are provided in the casing to be moved along the disc holder. The reproducing device has an opening at a side confronting the disc holder. A loading arm is provided for loading the disc passing through the opening. A wire is connected to opposite sides of the casing along the disc holders so as to prevent the disc stored in the disc holder from removing. A plurality of rollers are disposed in the reproducing device around the opening. The wire is engaged with the rollers so as not to obstruct the opening and to allow each reproducing device to be independently moved from the other reproducing device.

Abstract: An automatic disc changer has a casing for the automatic disc changer, and a plurality of disc holders arranged in the casing. The disc holder stores a plurality of disks in vertical positions. A reproducing device is provided in the casing to be moved along the disc holder. A movable frame is provided on the disc holder to be shifted by a pitch of the space in a direction of the arrangement of the disc holders. A plurality of guide projections are provided on the movable frame, which are disposed adjacent to ends of the holding plates. The guide projections are arranged by a pitch which is twice as much as the pitch of the space. Each guide projection has a triangular section, the bottom of which is approximately equal to a width of the space, so as to close a corresponding space.