Abstract: Methods and apparatus are disclosed for exposing a reticle pattern onto a sensitive substrate (such as a sensitized semiconductor wafer) by projection-exposure at high focusing precision. According to the method, multiple evaluation marks are projected onto an area of the surface to form images of the evaluation marks. An image of a measurement mark is projected on or near at least some of the evaluation marks. Respective Z-direction displacements of each evaluation mark relative to a reference plane are detected by detecting a characteristic of the respective measurement mark that varies with a change in position of the measurement mark relative to the respective evaluation mark. Based on such measurements, an axial relationship of the projection-optical system relative to the substrate can be changed to place the substrate at a best-focus position before exposing the substrate with a reticle pattern. Associated apparatus are also disclosed.

Abstract: A projection exposure apparatus comprises a projection optical system for projecting a pattern of a mask on a photosensitive substrate, a stage, for holding the photosensitive substrate, movable in an optical-axis direction of the projection optical system and in a direction perpendicular to the optical axis, a position detection system for outputting a detection signal corresponding to a deviation of the projection optical system in the optical-axis direction between an imaging plane of the projection optical system and the surface of the photosensitive substrate by projecting a beam of light assuming a predetermined shape on the photosensitive substrate and, at the same time, photoelectrically detecting the reflected light from the photosensitive substrate, a fiducial member provided on the stage and having a fiducial pattern assuming a predetermined shape, and a device for detecting an irradiation position of the light beam within a plane perpendicular to the optical axis of the projection optical system o

Abstract: A step-and-scan exposure method in which a mask has a plurality of patterns and the number of patterns to be transferred to each shot area of a photosensitive substrate varies. The scanning and stepping movements are controlled in accordance with the number of patterns transferred, and dimensions of a pattern illumination area are varied in accordance with the patterns to be transferred. Transfer of a pattern to a shot area is omitted when an image of the pattern on the shot area would extend beyond the photosensitive substrate. Elimination of exposure scanning movements for patterns that are not to be transferred permits rapid movements of the mask and the substrate to scanning start positions.

Abstract: An exposure apparatus for transferring a pattern formed on a mask to a photosensitive substrate is provided with an illumination optical system for illuminating a local area on the mask with a light beam, a projection optical system for projecting the pattern of the mask to the photosensitive substrate and a relative scanning device for relatively scanning the mask and the photosensitive substrate in a perpendicular direction to the optical axis of the projection optical system so as to transfer the pattern of the mask to the photosensitive substrate.

Abstract: An inclination detecting apparatus is for detecting an inclination of a front surface of a transparent wafer placed on a perpendicular to an optical axis of a projection objective in an exposure apparatus. The inclination detecting apparatus includes an illumination optical system and a condenser optical system. The illumination optical system obliquely supplies a collimated beam onto the front surface of the wafer. The condenser optical system can condense the collimated beam supplied from the illumination optical system and reflected by the wafer, and it has a quartered photodetector for receiving the reflected beam and generating a position signal corresponding to a light receiving position. The apparatus further includes a first slit plate and a second slit plate located in the illumination optical system and the condenser optical system respectively.

Abstract: A plane positioning apparatus comprises a projector for projecting beams to a given portion on the surface of a substrate in a diagonal direction, a light receiving device to receive beams reflected from the substrate surface and output photoelectric signals in accordance with variation of the light receiving position, a calculating circuit to output deviation signals in accordance with the deviation amount of the substrate surface with respect to a predetermined fiducial plane based on the deviation signals, a substrate shifting device to shift and set the substrate at a given position in a direction perpendicular to the fiducial plane in accordance with the deviation signals, a level variation detecting device to detect level variation of the deviation signals generated when the substrate surface and the fiducial plane are displaced interrelatedly, an inclination calculating device to calculate, in accordance with the level variation characteristics, the value of the inclination of the level variation chara

Abstract: An inclination detecting device has a light emitting system for emitting a parallel light flux to a substrate; a light receiving system for condensing the light reflected from the substrate, detecting the reflected light photoelectrically and outputting a photoelectric signal in accordance with the intensity of the reflected light; a stop member for changing at least one of the shape and the size of an illumination area of the parallel light flux on the substrate; an adjusting unit for changing the intensity of the photoelectric signal in accordance with the change of at least one of the shape and the size of the illumination area defined by the stop member; and a unit for detecting an inclination of the substrate with respect to a predetermined reference plane based on the photoelectric signal from the light receiving system.

Abstract: In an apparatus which positions an average plane thereof parallel to a best focus plane of a projection optical system even if there is unevenness on a wafer, a leveling stage is tilted on the basis of detection signal from an auto-leveling system and a surface of a shot area on a wafer is positioned in a predetermined tilt position relative to a focus plane of the projection optical system. While such a position being kept unchanged, a deviation between the focus plane of the projection optical system and the surface of the shot area is detected at each of multi-points. Within the shot area, by the use of auto-focus system, an amount of relative tilt between an average plane of the shot area obtained from plural deviations and the focus plane of the projection optical system is calculated, and by the use of thus calculated amount of tilt and the detection signal of auto-leveling system, the focus plane of the projection optical system is positioned in parallel with the average plane of the shot area.