Abstract: In a semiconductor device including evaluation elements comprising a plurality of first wirings composed of a first wiring layer, a plurality of second wirings composed of a second wiring layer and vias connecting the first wirings and the second wirings, the first wirings and the second wirings are formed in directions almost perpendicular with each other, and relative to the plurality of first wirings juxtaposed with a prescribed interval, the plurality of second wirings connecting the adjacent first wirings are juxtaposed in the length direction of the first wirings, and a plurality of current paths are formed in parallel.

Abstract: In a semiconductor device including evaluation elements comprising a plurality of first wirings composed of a first wiring layer, a plurality of second wirings composed of a second wiring layer and vias connecting the first wirings and the second wirings, the first wirings and the second wirings are formed in directions almost perpendicular with each other, and relative to the plurality of first wirings juxtaposed with a prescribed interval, the plurality of second wirings connecting the adjacent first wirings are juxtaposed in the length direction of the first wirings, and a plurality of current paths are formed in parallel.

Abstract: An interconnect of a semiconductor device having a multilayer interconnect structure is designed by predicting the life of the interconnect governed by an electromigration with different predicting models that are classified according to a void incubation period and a void growth period of a void that occurs in the vicinity of a junction between the interconnect and a via which connects upper and lower interconnect, and designing the interconnect based on the predicted life. The different predicting models are classified according to whether the interconnect with the void is positioned above or below the via.