Abstract: The disclosure relates to a power device package structure. By employing the metal substrate of the power device package structure serve as a bottom electrode of a capacitor, the capacitor is integrated into the power device package structure. A dielectric material layer and a upper metal layer sequentially disposed on the metal substrate.

Abstract: The disclosure provides a capacitor structure. A first dielectric layer is disposed over the first electrode layer. A second electrode layer is disposed over the first dielectric layer. At least one of the first electrode layer and the second electrode layer has a peak-valley like structure to create at least two different gap distances therebetween, thereby providing parallel combinations of at least two different capacitances.

Abstract: A plurality of coaxial leads is made within a single via in a circuit substrate to enhance the density of vertical interconnection so as to match the demand for higher density multi-layers circuit interconnection between top circuit layer and bottom circuit layer of the substrate. Coaxial leads provide electromagnetic interference shielding among the plurality of coaxial leads in a single via.

Abstract: A capacitor device is provided. The capacitor device includes at least one capacitor. The capacitor device also includes a first capacitor and a first filter coupling the first capacitor and a conductive region, wherein the first capacitor has a first resonance frequency and the first filter is configured to operate at a first frequency band covering the first resonance frequency.

Abstract: A stepwise capacitor structure includes at least one stepwise conductive layer. The stepwise capacitor represents a feature of multiple capacitors. When currents flow through the stepwise capacitor, different current paths are presented in between an upper conductor and a bottom conductor of the stepwise capacitor in response to different current frequency; different inductor is induced in each path and decoupled by a stepwise capacitor structure as disclosed herein.

Abstract: The disclosure relates to a power device package structure. By employing the metal substrate of the power device package structure serve as a bottom electrode of a capacitor, the capacitor is integrated into the power device package structure. A dielectric material layer and a upper metal layer sequentially disposed on the metal substrate.

Abstract: A capacitive device is provided. The capacitive device includes a first electrode and a second electrode below the first electrode and spaced apart from the first electrode, wherein at least one of the first electrode and the second electrode includes a plurality of conductive step sections, the plurality of conductive step sections having different heights. The capacitive device also includes an insulating region between the first electrode and the second electrode; and at least one slot formed on one of the first electrode and the second electrode.

Abstract: A mirror image shielding structure is provided, which includes an electronic element and a ground shielding plane below the electronic element. The shape of the ground shielding plane is identical to the projection shape of the electronic element, and the horizontal size of the ground shielding plane is greater than or equal to that of the electronic element. Thus, the parasitic effect between the electronic element and the ground shielding plane is effectively reduced, and the vertical coupling effect between electronic elements is also reduced. Furthermore, the vertical impact on the signal integrity of the embedded elements caused by the layout of the transmission lines is prevented.

Abstract: A capacitive module is provided. The capacitive module may include a first capacitor including a first electrode and a second electrode, one of the first electrode and the second electrode being coupled to at least one first conductive via and the other one of the first electrode and the second electrode being coupled to at least one second conductive via. The capacitive module may also include a second capacitor spaced apart from the first capacitor, the second capacitor including a third electrode and a fourth electrode, one of the third electrode and the fourth electrode being coupled to the at least one first conductive via and the other one of the third electrode and the fourth electrode being coupled to the at least one second conductive via.

Abstract: A capacitor device may include a first electrode, a second electrode, a third electrode, a first dielectric layer, and a second dielectric layer. The first electrode may be coupled with a first terminal of the capacitor device. The second electrode is under the first electrode and may be coupled with a second terminal of the capacitor device. The second electrode may be electrically isolated from the first electrode. The third electrode is under the first electrode and the second electrode and may be electrically isolated from the second electrode and electrically coupled with the first electrode. The first dielectric layer has a first dielectric constant and may be sandwiched between the first electrode and the second electrode. The second dielectric layer may have a second dielectric constant and may be sandwiched between the second electrode and the third electrode. In one embodiment, the second dielectric constant is at least five times larger than the first dielectric constant.

Abstract: An electrically conductive structure includes a first conductive structure and a second conductive structure. Each has a conducting section at one end and a coupling section at the other end. The first and second conducting sections are electrically connected to a power and ground contact of an electronic device, respectively. The first and second coupling sections are respectively connected with power and ground layer of a circuit board. The first coupling sections are connected with the first conducting section through first extending sections and the second coupling sections are connected with the second conducting section through second extending sections. At least two coupling sections of the conductive structures are arranged in pairs. The first conductive structure and the second conductive structure are arranged in a staggered array to form two wiring loops having opposite current directions, thereby generating a magnetic flux cancellation effect.

Abstract: A circuit board with embedded components includes a plurality of embedded components and at least one transmission line electrically connected to at least one of the embedded components and having a terminal circuit. Therefore, a measuring device is used to be electrically connected to the transmission line and send out a signal, so as to receive a corresponding reflected signal, and then, compare the received reflected signal with a signal pattern in the database to obtain an electrical parameter of the embedded component.

Abstract: A capacitor device with a capacitance is introduced. The capacitor device includes at least one capacitive element. The at least capacitive element comprises a pair of first conductive layers being opposed to each other, at least one first dielectric layer formed on a surface of at least one of the first conductive layers, and a second dielectric layer being sandwiched between the first conductive layers. The first dielectric layer has a first dielectric constant and the second dielectric layer has a second dielectric constant. The capacitance of the capacitor device depends on dielectric parameters of the first dielectric layer and the second dielectric layer. The dielectric parameters comprise the first dielectric constant and thickness of the at least one first dielectric layer and the second dielectric constant and thickness of the second dielectric layer.

Abstract: An ESD protection structure is provided. A substrate includes a first voltage variable material and has a first surface, a second surface substantially paralleled to the first surface and a via connecting the first and second surfaces. A first metal layer is disposed in the substrate for coupling to a ground terminal. The first voltage variable material is in a conductive state when an ESD event occurs, such that the via is electrically connected with the first metal layer to form a discharge path, and the first voltage variable material is in an isolation state when the ESD event is absent, such that the via is electrically isolated from the first metal layer.

Abstract: The disclosure provides a capacitor structure. A first dielectric layer is disposed over the first electrode layer. A second electrode layer is disposed over the first dielectric layer. At least one of the first electrode layer and the second electrode layer has a peak-valley like structure to create at least two different gap distances therebetween, thereby providing parallel combinations of at least two different capacitances.

Abstract: A capacitor device with a capacitance is introduced. The capacitor device includes at least one capacitive element. The at least capacitive element comprises a pair of first conductive layers being opposed to each other, at least one first dielectric layer formed on a surface of at least one of the first conductive layers, and a second dielectric layer being sandwiched between the first conductive layers. The first dielectric layer has a first dielectric constant and the second dielectric layer has a second dielectric constant. The capacitance of the capacitor device depends on dielectric parameters of the first dielectric layer and the second dielectric layer. The dielectric parameters comprise the first dielectric constant and thickness of the at least one first dielectric layer and the second dielectric constant and thickness of the second dielectric layer.

Abstract: A capacitor device may include a first electrode, a second electrode, a third electrode, a first dielectric layer, and a second dielectric layer. The first electrode may be coupled with a first terminal of the capacitor device. The second electrode is under the first electrode and may be coupled with a second terminal of the capacitor device. The second electrode may be electrically isolated from the first electrode. The third electrode is under the first electrode and the second electrode and may be electrically isolated from the second electrode and electrically coupled with the first electrode. The first dielectric layer has a first dielectric constant and may be sandwiched between the first electrode and the second electrode. The second dielectric layer may have a second dielectric constant and may be sandwiched between the second electrode and the third electrode. In one embodiment, the second dielectric constant is at least five times larger than the first dielectric constant.

Abstract: A capacitor device with a capacitance is introduced. The capacitor device includes at least one capacitive element. The at least capacitive element comprises a pair of first conductive layers being opposed to each other, at least one first dielectric layer formed on a surface of at least one of the first conductive layers, and a second dielectric layer being sandwiched between the first conductive layers. The first dielectric layer has a first dielectric constant and the second dielectric layer has a second dielectric constant. The capacitance of the capacitor device depends on dielectric parameters of the first dielectric layer and the second dielectric layer. The dielectric parameters comprise the first dielectric constant and thickness of the at least one first dielectric layer and the second dielectric constant and thickness of the second dielectric layer.

Abstract: A mirror image shielding structure is provided, which includes an electronic element and a ground shielding plane below the electronic element. The shape of the ground shielding plane is identical to the projection shape of the electronic element, and the horizontal size of the ground shielding plane is greater than or equal to that of the electronic element. Thus, the parasitic effect between the electronic element and the ground shielding plane is effectively reduced, and the vertical coupling effect between electronic elements is also reduced. Furthermore, the vertical impact on the signal integrity of the embedded elements caused by the layout of the transmission lines is prevented.

Abstract: A mirror image shielding structure is provided, which includes an electronic element and a ground shielding plane below the electronic element. The shape of the ground shielding plane is identical to the projection shape of the electronic element, and the horizontal size of the ground shielding plane is greater than or equal to that of the electronic element. Thus, the parasitic effect between the electronic element and the ground shielding plane is effectively reduced, and the vertical coupling effect between electronic elements is also reduced. Furthermore, the vertical impact on the signal integrity of the embedded elements caused by the layout of the transmission lines is prevented.