Abstract: Provided are a semiconductor device with a bonding strength ensured between an electrode of a semiconductor element and a terminal, and a power conversion device including the semiconductor device. A semiconductor device includes: a semiconductor element having an electrode; a substrate; a terminal; and a bonding material. The terminal has a through hole and has a step portion in the inside of the through hole. The bonding material covers the step portion in the inside of the through hole and is in contact with the electrode of the semiconductor element.

Abstract: Provided is a semiconductor device that prevents resin from leaking out from a resin insulating member at a periphery of the resin insulating member and thereby achieves an increase in reliability. The semiconductor device includes a module unit, a resin insulating member bonded to the module unit, a cooling unit coupled to the module unit with the resin insulating member interposed therebetween, and a flow blocking member disposed between the module unit and the cooling unit to surround the resin insulating member, the flow blocking member being more easily compressively deformable than the resin insulating member.

Abstract: A semiconductor module and a power converter are obtained that can be miniaturized while reliably connecting a control signal electrode of a semiconductor chip to a control signal terminal. The semiconductor module includes a base member, a semiconductor chip, a positioning member, and a control signal terminal. The semiconductor chip is mounted on the base member. The semiconductor chip includes a control signal electrode. The positioning member includes a positioning portion that contacts an outer peripheral end portion of the semiconductor chip. The positioning member is disposed on the base member. The control signal terminal is fixed to the positioning member. The control signal terminal is connected to the control signal electrode.

Abstract: A power module includes a first power semiconductor device including a first electrode, a resin frame including first receiving portions, and a first leadframe. The first leadframe has a first main surface facing the first electrode and is electrically and mechanically connected to the first electrode. The first receiving portions face the first main surface of the first leadframe and receive part of the first leadframe. Thus, the power module has high reliability and can be miniaturized.

Abstract: A power semiconductor device having a high degree of reliability even when an operable temperature of a power semiconductor element is sufficiently increased. The power semiconductor device includes: a power semiconductor element including an electrode formed on a first surface; a first stress mitigation portion connected to the electrode with a first bonding portion being interposed; and a wiring portion electrically connected to the first stress mitigation portion with a second bonding portion being interposed. A bonding strength of the first bonding portion is higher than a bonding strength of the second bonding portion.

Abstract: Provided is a semiconductor device having high heat conductivity and high productivity. A semiconductor device includes an insulating substrate, a semiconductor element, a die-bond material, a joining material, and a cooler. The insulating substrate has an insulating ceramic, a first conductive plates disposed on one surface of the insulating ceramic, and a second conductive plate disposed on another surface of the insulating ceramic. The semiconductor element is disposed on the first conductive plate through the die-bond material. The die-bond material contains sintered metal. The semiconductor element has a bending strength degree of 700 MPa or more, and has a thickness of 0.05 mm or more and 0.1 mm or less. The cooler is joined to the second conductive plate through the joining material.

Abstract: Provided are a semiconductor device which is provided with a circuit board and capable of suppressing an increase in its footprint, and a power conversion apparatus including the semiconductor device. The semiconductor device includes a circuit board, a power semiconductor element, an insulating block, a control signal terminal, a first main terminal, and a second main terminal. The insulating block is disposed so as to surround the power semiconductor element. The control signal terminal is inserted into the insulating block and thereby fixed to the insulating block. The control signal terminal includes a bent portion which partially protrudes above the power semiconductor element from the insulating block, and is bonded to the power semiconductor element. The first main terminal is bonded to the same power semiconductor element as the power semiconductor element to which the control signal terminal is bonded. The second main terminal is bonded to the circuit board.

Abstract: A semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device includes an insulating substrate, a semiconductor chip, a plate member, and a cooler. The insulating substrate includes insulating ceramics serving as an insulating plate, and conductive plates provided on opposite surfaces of the insulating ceramics. The semiconductor chip is provided on an upper surface of the insulating substrate. The plate member is bonded to a lower surface of the insulating substrate. The cooler is bonded to a lower surface of the plate member. At least one of bonding between a lower surface of the insulating substrate and the plate member and bonding between a lower surface of the plate member and the cooler is performed via a bonding member composed mainly of tin. Also, a cyclic stress of the plate member is smaller than a tensile strength of the bonding member.

Abstract: Provided are a semiconductor device which is provided with a circuit board and capable of suppressing an increase in its footprint, and a power conversion apparatus including the semiconductor device. The semiconductor device includes a circuit board, a power semiconductor element, an insulating block, a control signal terminal, a first main terminal, and a second main terminal. The insulating block is disposed so as to surround the power semiconductor element. The control signal terminal is inserted into the insulating block and thereby fixed to the insulating block. The control signal terminal includes a bent portion which partially protrudes above the power semiconductor element from the insulating block, and is bonded to the power semiconductor element. The first main terminal is bonded to the same power semiconductor element as the power semiconductor element to which the control signal terminal is bonded. The second main terminal is bonded to the circuit board.

Abstract: A power module includes an insulated circuit board, a semiconductor element, a first buffer plate, and first and second joining materials. The semiconductor element is disposed on a side of one main surface of the insulated circuit board. The first buffer plate is disposed between the insulated circuit board and the semiconductor element. The first joining material is divided into a plurality of portions in a plan view. The first buffer plate is higher in coefficient of linear expansion than the semiconductor element and lower in coefficient of linear expansion than the insulated circuit board. The first buffer plate is lower in Young's modulus than the semiconductor element.

Abstract: A power semiconductor device having a high degree of reliability even when an operable temperature of a power semiconductor element is sufficiently increased. The power semiconductor device includes: a power semiconductor element including an electrode formed on a first surface; a first stress mitigation portion connected to the electrode with a first bonding portion being interposed; and a wiring portion electrically connected to the first stress mitigation portion with a second bonding portion being interposed. A bonding strength of the first bonding portion is higher than a bonding strength of the second bonding portion.

Abstract: Provided is a semiconductor device having high heat conductivity and high productivity. A semiconductor device includes an insulating substrate, a semiconductor element, a die-bond material, a joining material, and a cooler. The insulating substrate has an insulating ceramic, a first conductive plates disposed on one surface of the insulating ceramic, and a second conductive plate disposed on another surface of the insulating ceramic. The semiconductor element is disposed on the first conductive plate through the die-bond material. The die-bond material contains sintered metal. The semiconductor element has a bending strength degree of 700 MPa or more, and has a thickness of 0.05 mm or more and 0.1 mm or less. The cooler is joined to the second conductive plate through the joining material.

Abstract: A power module includes a first power semiconductor device including a first electrode, a resin frame including first receiving portions, and a first leadframe. The first leadframe has a first main surface facing the first electrode and is electrically and mechanically connected to the first electrode. The first receiving portions face the first main surface of the first leadframe and receive part of the first leadframe. Thus, the power module has high reliability and can be miniaturized.

Abstract: An insulated circuit board includes an insulated substrate, a first electrode, and a second electrode. A thin portion is formed in a corner portion, the corner portion being a region occupying, with regard to directions along outer edges from a vertex of at least one of the first and second electrodes in plan view, a portion of a length of the outer edges, and the thin portion has a thickness smaller than that of a region other than the thin portion. The thin portion in at least one of the first and second electrodes has a planar shape surrounded by first and second sides orthogonal to each other as portions of the outer edges from the vertex, and a curved portion away from the vertex of the first and second sides.

Abstract: A power module includes an insulated circuit board, a semiconductor element, a first buffer plate, and first and second joining materials. The semiconductor element is disposed on a side of one main surface of the insulated circuit board. The first buffer plate is disposed between the insulated circuit board and the semiconductor element. The first joining material is divided into a plurality of portions in a plan view. The first buffer plate is higher in coefficient of linear expansion than the semiconductor element and lower in coefficient of linear expansion than the insulated circuit board. The first buffer plate is lower in Young's modulus than the semiconductor element.

Abstract: An insulated circuit board includes an insulated substrate, a first electrode, and a second electrode. A thin portion is formed in a corner portion, the corner portion being a region occupying, with regard to directions along outer edges from a vertex of at least one of the first and second electrodes in plan view, a portion of a length of the outer edges, and the thin portion has a thickness smaller than that of a region other than the thin portion. The thin portion in at least one of the first and second electrodes has a planar shape surrounded by first and second sides orthogonal to each other as portions of the outer edges from the vertex, and a curved portion away from the vertex of the first and second sides.

Abstract: A semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device includes an insulating substrate, a semiconductor chip, a plate member, and a cooler. The insulating substrate includes insulating ceramics serving as an insulating plate, and conductive plates provided on opposite surfaces of the insulating ceramics. The semiconductor chip is provided on an upper surface of the insulating substrate. The plate member is bonded to a lower surface of the insulating substrate. The cooler is bonded to a lower surface of the plate member. At least one of bonding between a lower surface of the insulating substrate and the plate member and bonding between a lower surface of the plate member and the cooler is performed via a bonding member composed mainly of tin. Also, a cyclic stress of the plate member is smaller than a tensile strength of the bonding member.

Abstract: A power semiconductor module includes: a plurality of semiconductor element substrates disposed on the same plane, each of which includes an insulating substrate with a front-side electrode formed on one of the surfaces of an insulator plate and a back-side electrode formed on the other surface of the insulator plate and a power semiconductor element fixed on a surface of the front-side electrode; and a wiring member that electrically connects with each other the semiconductor element substrates adjacent to each other; and the semiconductor element substrates and the wiring member are molded with mold resin; wherein the mold resin is provided with a recessed part, between the insulating substrates adjacent to each other, which is not filled with the resin constituting the mold resin to a predetermined depth from the side of the back-side electrode.

Abstract: A power semiconductor module includes: a plurality of semiconductor element substrates disposed on the same plane, each of which includes an insulating substrate with a front-side electrode formed on one of the surfaces of an insulator plate and a back-side electrode formed on the other surface of the insulator plate and a power semiconductor element fixed on a surface of the front-side electrode; and a wiring member that electrically connects with each other the semiconductor element substrates adjacent to each other; and the semiconductor element substrates and the wiring member are molded with mold resin; wherein the mold resin is provided with a recessed part, between the insulating substrates adjacent to each other, which is not filled with the resin constituting the mold resin to a predetermined depth from the side of the back-side electrode.

Abstract: A plurality of semiconductor element is formed on a substrate. A plurality of sealing windows and a support portion supporting the plurality of sealing windows are formed on a SOI substrate. The SOI substrate is pressured against the substrate by using a pressurizing member and the plurality of sealing windows of the SOI substrate is bonded to the substrate via a low melting point glass member arranged around the plurality of semiconductor elements. The support portion is separated from the plurality of sealing windows bonded to the substrate.