Abstract: A plurality of semiconductor element is formed on a substrate. A plurality of sealing windows and a support portion supporting the plurality of sealing windows are formed on a SOI substrate. The SOI substrate is pressured against the substrate by using a pressurizing member and the plurality of sealing windows of the SOI substrate is bonded to the substrate via a low melting point glass member arranged around the plurality of semiconductor elements. The support portion is separated from the plurality of sealing windows bonded to the substrate.

Abstract: A semiconductor device includes: a substrate; a semiconductor element on the substrate; an interconnection on the substrate and electrically connected to the semiconductor element; a window frame member on the substrate, surrounding the semiconductor element, and in contact with the interconnection; and a sealing window bonded to the window frame member and encapsulating the semiconductor element. The window frame member is a low melting glass and has a sheet resistance of 106-1010 ?/?.

Abstract: A method for manufacturing a semiconductor device includes: forming a semiconductor element on a main surface of a substrate; forming a low melting glass film having a melting point of 450° C. or less on the main surface and the semiconductor element; heat treating the substrate while pressing the low melting glass film toward the main surface of the substrate with a pressurizing jig that is insulating or semi-insulating, and sintering the low melting glass film; and leaving the pressurizing jig on the low melting glass film after sintering the low melting glass film.

Abstract: A semiconductor device includes: a substrate; a semiconductor element on the substrate; an interconnection on the substrate and electrically connected to the semiconductor element; a window frame member on the substrate, surrounding the semiconductor element, and in contact with the interconnection; and a sealing window bonded to the window frame member and encapsulating the semiconductor element. The window frame member is a low melting glass and has a sheet resistance of 106-1010 ?/?.

Abstract: There is provided a variable device circuit according to the present invention, including: a substrate; at least one movable switch device formed on a first principal surface of the substrate; at least one fixed capacitor device formed on the first principal surface of the substrate; at least one variable capacitor device formed on the first principal surface of the substrate; at least one variable inductor device formed on the first principal surface of the substrate; and wiring lines for electrically connecting the devices to one another, the wiring lines being formed on the first principal surface of the substrate; wherein electrical connections among the devices can be selected by operation of the movable switch device, whereby achieving stable, low-loss circuit characteristics with lower manufacturing cost.

Abstract: A switch circuit includes: a first input and output terminal; a first inductor connected with the first input and output terminal; a capacitor connected with the first inductor; a second input and output terminal connected with the capacitor; a first MEMS switch connected with one end of the capacitor; a second MEMS switch connected with the other end of the capacitor; and a second inductor connected between the first MEMS switch and the second MEMS switch, and satisfies a relationship of f=1/(2??CL1)=1/(2??CL2), where L1 is an inductance of the first inductor, L2 is an inductance of the second inductor, C is a capacitance of the capacitor, and f is a use frequency.

Abstract: A comb-teeth electrode, a frame electrode, and an inter-electrode wire are formed on a first major surface of a substrate made of a ferroelectric material. A back-face electrode is formed on a second major surface of the substrate. A periodically-poled structure is formed by applying a voltage between the frame electrode and the back-face electrode. A region equivalent to the periodically-poled structure is cut from the substrate thereby fabricating an optical functional element. The inter-electrode wire is formed on an insulating layer that is formed on the substrate.

Abstract: A switch circuit including: a plurality of MEMS switches connected in parallel or in series, which have different drive voltages; and a single voltage supply for driving the plurality of MEMS switches by the plurality of drive voltages, is used for a microwave circuit or an antenna circuit, to vary a configuration of the microwave circuit or the antenna circuit based on the drive voltage value. That is, the configuration of the microwave circuit or the antenna circuit can be varied based on the drive voltage value by using the switch circuit including the MEMS switches having the different drive voltages for the microwave circuit or the antenna circuit.

Abstract: There is provided a variable device circuit according to the present invention, including: a substrate; at least one movable switch device formed on a first principal surface of the substrate; at least one fixed capacitor device formed on the first principal surface of the substrate; at least one variable capacitor device formed on the first principal surface of the substrate; at least one variable inductor device formed on the first principal surface of the substrate; and wiring lines for electrically connecting the devices to one another, the wiring lines being formed on the first principal surface of the substrate; wherein electrical connections among the devices can be selected by operation of the movable switch device, whereby achieving stable, low-loss circuit characteristics with lower manufacturing cost.

Abstract: A switch circuit includes: a first input and output terminal; a first inductor connected with the first input and output terminal; a capacitor connected with the first inductor; a second input and output terminal connected with the capacitor; a first MEMS switch connected with one end of the capacitor; a second MEMS switch connected with the other end of the capacitor; and a second inductor connected between the first MEMS switch and the second MEMS switch, and satisfies a relationship of f=1/(2??CL1)=1/(2??CL2), where L1 is an inductance of the first inductor, L2 is an inductance of the second inductor, C is a capacitance of the capacitor, and f is a use frequency.