Patents by Inventor Shinsuke Tanaka

Shinsuke Tanaka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190248949
    Abstract: A polymerizable composition for an optical material of the present invention includes (A) a compound of which pKa value is 1 to 9, (B) a di- or higher functional iso(thio)cyanate compound, and (C) a di- or higher functional active hydrogen compound.
    Type: Application
    Filed: October 31, 2017
    Publication date: August 15, 2019
    Applicant: Mitsui Chemicals, Inc.
    Inventors: Shinsuke Ito, Masayuki Furuya, Kouji Suesugi, Takeshi Nishimura, Mamoru Tanaka
  • Publication number: 20190237700
    Abstract: A light emitting apparatus (10) includes a substrate (100), an insulating layer (160), a light emitting element (102), a coating film (140), and a structure (150). The insulating layer (160) is formed over one surface of the substrate (100), and includes an opening (162). The light emitting element (102) is formed in the opening (162). The coating film (140) is formed over the one surface of the substrate (100), and covers a portion of the light emitting element (102), the insulating layer (160), and the one surface of the substrate (100). The coating film (140) does not cover another portion of the substrate (100) (for example, a portion of an end portion: hereinafter, referred to as a first portion). The structure (150) is located between the first portion of the substrate (100) and the insulating layer (160). The coating film (140) also covers the insulating layer (160).
    Type: Application
    Filed: April 8, 2019
    Publication date: August 1, 2019
    Inventors: Koji FUJITA, Shinsuke TANAKA, Yuji SAITO, Shinji NAKAJIMA
  • Publication number: 20190206985
    Abstract: In a first main surface of a silicon carbide semiconductor base, a trench is formed. On a first main surface side of the silicon carbide semiconductor base, an n-type silicon carbide epitaxial layer is deposited. In a surface of the n-type silicon carbide epitaxial layer, an n-type high-concentration region is provided. In the surface of the n-type silicon carbide epitaxial layer, a first p-type base region and a second p+-type base region are selectively provided. The second p+-type base region is formed at the bottom of the trench. A depth of the n-type high-concentration region is deeper than that of the first p-type base region and the second p+-type base region. Thus, by an easy method, the electric field at a gate insulating film at the bottom of the trench is mitigated, enabling the breakdown voltage of the active region to be maintained and the ON resistance to be lowered.
    Type: Application
    Filed: March 6, 2019
    Publication date: July 4, 2019
    Applicant: FUJI ELECTRIC CO., LTD.
    Inventors: Masanobu IWAYA, Akimasa KINOSHITA, Shinsuke HARADA, Yasunori TANAKA
  • Publication number: 20190207142
    Abstract: A light-emitting unit (140) is formed over a first surface (102) of a substrate (100). A first terminal (112) and a second terminal (132) are formed on the first surface (102) of the substrate (100), and are electrically connected to the light-emitting unit (140). A sealing layer (200) is formed over the first surface (102) of the substrate (100), and seals the light-emitting unit (140). In addition, the sealing layer (200) does not cover the first terminal (112) and the second terminal (132). A cover layer (210) is formed over the sealing layer (200), and is formed of a material different from that of the cover layer (210). In at least a portion of a region located next to the first terminal (112) and a region located next to the second terminal (132), a portion of an end of the cover layer (210) protrudes from the sealing layer (200).
    Type: Application
    Filed: February 22, 2019
    Publication date: July 4, 2019
    Inventors: Hirotsugi HATAKEYAMA, Shinsuke TANAKA, Shinji NAKAJIMA
  • Patent number: 10336837
    Abstract: [Problem to be solved] There is provided a process for producing an olefin polymer that is capable of producing an olefin polymer having high heat resistance and high molecular weight with excellent catalytic activity. [Solution to problem] The process for producing an olefin polymer includes a step of polymerizing at least one olefin selected from ethylene and ?-olefins having 4 to 30 carbon atoms in the presence of an olefin polymerization catalyst containing a transition metal compound represented by the general formula [I], the olefin polymer including constituent units derived from ethylene and ?-olefins having 4 to 30 carbon atoms in a total amount between more than 50 mol % and not more than 100 mol %, [in the formula [I], R1, R3 and R5 to R16 are each independently a hydrogen atom, a hydrocarbon group or the like; R2 is a hydrocarbon group or the like; R4 is a hydrogen atom; M is a transition metal of Group IV; Q is a halogen atom or the like; and j is an integer of 1 to 4].
    Type: Grant
    Filed: May 30, 2017
    Date of Patent: July 2, 2019
    Assignee: MITSUI CHEMICALS, INC.
    Inventors: Munehito Funaya, Atsushi Sakuma, Ikuko Ebisawa, Shinsuke Kinoshita, Akiko Matsumoto, Hirokazu Tanaka, Shinya Tanaka
  • Patent number: 10336838
    Abstract: [Problem to be solved] There is provided a process for producing an olefin polymer that is capable of producing an olefin polymer having high heat resistance and high molecular weight with excellent catalytic activity. [Solution to problem] The process for producing an olefin polymer includes a step of polymerizing at least one olefin selected from ethylene and ?-olefins having 4 to 30 carbon atoms in the presence of an olefin polymerization catalyst containing a transition metal compound represented by the general formula [I], the olefin polymer including constituent units derived from ethylene and ?-olefins having 4 to 30 carbon atoms in a total amount between more than 50 mol % and not more than 100 mol %, [in the formula [I], R1, R3 and R5 to R16 are each independently a hydrogen atom, a hydrocarbon group or the like; R2 is a hydrocarbon group or the like; R4 is a hydrogen atom; M is a transition metal of Group IV; Q is a halogen atom or the like; and j is an integer of 1 to 4].
    Type: Grant
    Filed: May 30, 2017
    Date of Patent: July 2, 2019
    Assignee: MITSUI CHEMICALS, INC.
    Inventors: Munehito Funaya, Atsushi Sakuma, Ikuko Ebisawa, Shinsuke Kinoshita, Akiko Matsumoto, Hirokazu Tanaka, Shinya Tanaka
  • Publication number: 20190183348
    Abstract: An optical scanning device includes: an optical scanning unit configured to repeatedly scan an irradiation destination of irradiation light to a predetermined trajectory; a light emission control unit configured to control light emission of the irradiation light to irradiate irradiation points to the predetermined trajectory; and a driving signal generation unit configured to generate a driving signal for driving the optical scanning unit, wherein the light emission control unit irradiates the irradiation points to the predetermined trajectory so that the irradiation points are substantially uniformly dispersed in a region in which a density of the irradiation points is relatively low in a region in which the irradiation light is irradiated.
    Type: Application
    Filed: December 18, 2018
    Publication date: June 20, 2019
    Inventors: Shinsuke ONOE, Takahiro MATSUDA, Yoshiho SEO, Satoshi OUCHI, Tomohiko TANAKA, Taiichi TAKEZAKI, Ryo IMAI
  • Publication number: 20190189952
    Abstract: A substrate (100) includes a resin material. A first stacked film (210) is configured by laminating multiple layers and is formed on a first surface (102) of the substrate (100). A light-emitting unit (140) is formed over the first stacked film (210) and includes an organic layer. A second stacked film (220) is configured by laminating multiple layers and covers the light-emitting unit (140). A third stacked film (310) is configured by laminating multiple layers and is formed on a second surface (104) of the substrate (100). The third stacked film (310) is the same stacked film as the first stacked film (210), and the fourth stacked film (320) is the same stacked film as the second stacked film (220).
    Type: Application
    Filed: February 11, 2019
    Publication date: June 20, 2019
    Inventors: Shuichi SEKI, Shinsuke TANAKA
  • Publication number: 20190169133
    Abstract: An object of the present invention is to provide a method for industrially manufacturing a nitrogen-containing heterocyclic compound which shows excellent FLT3 inhibitory activity and is useful as a pharmaceutical active ingredient of pharmaceutical products. The present invention provides a manufacturing method of a compound represented by General Formula [14] or a salt thereof (in the formula, R1 represents a C1-6 alkyl group which may be substituted; and R8 represents a leaving group or the like).
    Type: Application
    Filed: February 11, 2019
    Publication date: June 6, 2019
    Applicant: FUJIFILM Corporation
    Inventors: Yusuke NAGATO, Shinsuke MIZUMOTO, Tatsuya MURAKAMI, Tomoyuki TANAKA
  • Publication number: 20190167229
    Abstract: An ultrasound imaging probe capable of securing an assembly accuracy of and improving a resolution performance of an obtained image is provided. A photoacoustic catheter includes: a silicon substrate which includes an ultrasonic transducer for detecting an ultrasonic wave formed thereon and a through hole passing through front and rear surfaces; an optical fiber which oscillates a laser; a lens which condenses the laser and is arranged within the through hole; a tubular housing; a glass cover which covers the lens; and a resin which fills a gap between the through hole and the lens. Further, the silicon substrate and the optical fiber are fixed to a part of the housing in the housing.
    Type: Application
    Filed: December 4, 2018
    Publication date: June 6, 2019
    Applicant: HITACHI, LTD.
    Inventors: Taiichi TAKEZAKI, Shuntaro MACHIDA, Hiroaki HASEGAWA, Tomohiko TANAKA, Ryo IMAI, Yoshiho SEO, Takahiro MATSUDA, Shinsuke ONOE
  • Publication number: 20190165166
    Abstract: In a first main surface side of a silicon carbide semiconductor base, a trench is formed. A second base region of a second conductivity type is arranged at a position facing the trench in a depth direction. An end (toward a drain electrode) of the second base region of the second conductivity type, and an end (toward the drain electrode) of a first base region of the second conductivity type reach a position deeper than an end (toward the drain electrode) of a region of a first conductivity type. Thus, the electric field at a gate insulating film at the trench bottom is mitigated, suppressing the breakdown voltage of the active region and enabling breakdown voltage design of the edge termination region to be facilitated. Further, such a semiconductor device may be formed by an easy method of manufacturing.
    Type: Application
    Filed: January 31, 2019
    Publication date: May 30, 2019
    Applicant: FUJI ELECTRIC CO., LTD.
    Inventors: Akimasa KINOSHITA, Shinsuke HARADA, Yasunori TANAKA
  • Patent number: 10297788
    Abstract: A light emitting apparatus (10) includes a substrate (100), an insulating layer (160), a light emitting element (102), a coating film (140), and a structure (150). The insulating layer (160) is formed over one surface of the substrate (100), and includes an opening (162). The light emitting element (102) is formed in the opening (162). The coating film (140) is formed over the one surface of the substrate (100), and covers a portion of the light emitting element (102), the insulating layer (160), and the one surface of the substrate (100). The coating film (140) does not cover another portion of the substrate (100) (for example, a portion of an end portion: hereinafter, referred to as a first portion). The structure (150) is located between the first portion of the substrate (100) and the insulating layer (160). The coating film (140) also covers the insulating layer (160).
    Type: Grant
    Filed: April 23, 2018
    Date of Patent: May 21, 2019
    Assignees: PIONEER CORPORATION, TOHOKU PIONEER CORPORATION
    Inventors: Koji Fujita, Shinsuke Tanaka, Yuji Saito, Shinji Nakajima
  • Patent number: 10243165
    Abstract: A light-emitting unit (140) is formed over a first surface (102) of a substrate (100). A first terminal (112) and a second terminal (132) are formed on the first surface (102) of the substrate (100), and are electrically connected to the light-emitting unit (140). A sealing layer (200) is formed over the first surface (102) of the substrate (100), and seals the light-emitting unit (140). In addition, the sealing layer (200) does not cover the first terminal (112) and the second terminal (132). A cover layer (210) is formed over the sealing layer (200), and is formed of a material different from that of the cover layer (210). In at least a portion of a region located next to the first terminal (112) and a region located next to the second terminal (132), a portion of an end of the cover layer (210) protrudes from the sealing layer (200).
    Type: Grant
    Filed: November 28, 2014
    Date of Patent: March 26, 2019
    Assignees: PIONEER CORPORATION, TOHOKU PIONEER CORPORATION
    Inventors: Hirotsugi Hatakeyama, Shinsuke Tanaka, Shinji Nakajima
  • Patent number: 10243166
    Abstract: A substrate (100) includes a resin material. A first stacked film (210) is configured by laminating multiple layers and is formed on a first surface (102) of the substrate (100). A light-emitting unit (140) is formed over the first stacked film (210) and includes an organic layer. A second stacked film (220) is configured by laminating multiple layers and covers the light-emitting unit (140). A third stacked film (310) is configured by laminating multiple layers and is formed on a second surface (104) of the substrate (100). The third stacked film (310) is the same stacked film as the first stacked film (210), and the fourth stacked film (320) is the same stacked film as the second stacked film (220).
    Type: Grant
    Filed: February 17, 2015
    Date of Patent: March 26, 2019
    Assignees: PIONEER CORPORATION, TOHOKU PIONEER CORPORATION
    Inventors: Shuichi Seki, Shinsuke Tanaka
  • Patent number: 10164713
    Abstract: An optical transmitter includes: a driving circuit that includes drivers each corresponding to a configuration bit of an input electrical data sequence; a MZ optical modulator that includes a first phase shifter provided in an arm and a second phase shifter provided in an arm; first capacitance elements that are electrically connected between the driving unit and the first phase shifter, each include an electric capacity weighted in response to a bit number of the configuration bit, and generate a first multilevel signal to be supplied to the first phase shifter; and second capacitance elements that are electrically connected between the driving circuit and the second phase shifter, each include an electric capacity weighted in response to a bit number of the configuration bit, and generate a second multilevel signal to be supplied to the second phase shifter.
    Type: Grant
    Filed: January 11, 2018
    Date of Patent: December 25, 2018
    Assignees: FUJITSU LIMITED, PHOTONICS ELECTRONICS TECHNOLOGY RESEARCH ASSOCIATION
    Inventors: Shinsuke Tanaka, Tatsuya Usuki, Toshihiko Mori
  • Publication number: 20180248152
    Abstract: A light emitting apparatus (10) includes a substrate (100), an insulating layer (160), a light emitting element (102), a coating film (140), and a structure (150). The insulating layer (160) is formed over one surface of the substrate (100), and includes an opening (162). The light emitting element (102) is formed in the opening (162). The coating film (140) is formed over the one surface of the substrate (100), and covers a portion of the light emitting element (102), the insulating layer (160), and the one surface of the substrate (100). The coating film (140) does not cover another portion of the substrate (100) (for example, a portion of an end portion: hereinafter, referred to as a first portion). The structure (150) is located between the first portion of the substrate (100) and the insulating layer (160). The coating film (140) also covers the insulating layer (160).
    Type: Application
    Filed: April 23, 2018
    Publication date: August 30, 2018
    Inventors: Koji FUJITA, Shinsuke TANAKA, Yuji SAITO, Shinji NAKAJIMA
  • Publication number: 20180205465
    Abstract: An optical transmitter includes: a driving circuit that includes drivers each corresponding to a configuration bit of an input electrical data sequence; a MZ optical modulator that includes a first phase shifter provided in an arm and a second phase shifter provided in an arm; first capacitance elements that are electrically connected between the driving unit and the first phase shifter, each include an electric capacity weighted in response to a bit number of the configuration bit, and generate a first multilevel signal to be supplied to the first phase shifter; and second capacitance elements that are electrically connected between the driving circuit and the second phase shifter, each include an electric capacity weighted in response to a bit number of the configuration bit, and generate a second multilevel signal to be supplied to the second phase shifter.
    Type: Application
    Filed: January 11, 2018
    Publication date: July 19, 2018
    Applicants: FUJITSU LIMITED, Photonics Electronics Technology Research Assocation
    Inventors: Shinsuke Tanaka, Tatsuya Usuki, Toshihiko Mori
  • Patent number: 9978986
    Abstract: A light emitting apparatus (10) includes a substrate (100), an insulating layer (160), a light emitting element (102), a coating film (140), and a structure (150). The insulating layer (160) is formed over one surface of the substrate (100), and includes an opening (162). The light emitting element (102) is formed in the opening (162). The coating film (140) is formed over the one surface of the substrate (100), and covers a portion of the light emitting element (102), the insulating layer (160), and the one surface of the substrate (100). The coating film (140) does not cover another portion of the substrate (100) (for example, a portion of an end portion: hereinafter, referred to as a first portion). The structure (150) is located between the first portion of the substrate (100) and the insulating layer (160). The coating film (140) also covers the insulating layer (160).
    Type: Grant
    Filed: March 13, 2014
    Date of Patent: May 22, 2018
    Assignees: PIONEER CORPORATION, TOHOKU PIONEER CORPORATION
    Inventors: Koji Fujita, Shinsuke Tanaka, Yuji Saito, Shinji Nakajima
  • Patent number: PP29353
    Abstract: A new and distinct cultivar of Hydrangea plant named ‘Kaho’, characterized by its double-type, mophead, medium pink-colored inflorescences dark green-colored foliage, and moderately vigorous, compact-upright growth habit, is disclosed.
    Type: Grant
    Filed: February 15, 2017
    Date of Patent: June 5, 2018
    Inventor: Shinsuke Tanaka
  • Patent number: PP29375
    Abstract: A new and distinct cultivar of Hydrangea plant named ‘Kazan’, characterized by its double-type, mophead, light pink-colored inflorescences, medium green-colored foliage, and vigorous, upright growth habit, is disclosed.
    Type: Grant
    Filed: February 15, 2017
    Date of Patent: June 12, 2018
    Inventor: Shinsuke Tanaka