Abstract: A bed apparatus includes: a mattress mounted on a bed body; and, first cells arranged on both left and right sides in a longitudinal direction of the bed body and is configured to change the body position of a patient on the mattress by inflating the first cells alternately. When the first cells on the left and right sides are inflated, and when a difference in pressure between the first cells on the left and right sides has continuously fallen within a decision pressure value range for a decision pressure value continuation time, the body position of the patient is changed, whereas when the difference has not continuously fallen within the pressure value range for the continuation time or when the difference has continuously fallen out of the pressure value range for the continuation time, change of the body position of the patient will not be performed.

Abstract: The present invention relates to a high-frequency semiconductor device. A conventional high-frequency semiconductor device including an input second-order harmonic matching circuit has such a problem that gain decrease occurs. In a high-frequency semiconductor device (100) of the present invention, two adjacent unit transistor cells (7) and (8) are connected to one input second-order harmonic matching circuit (19) provided on an upper surface of a semiconductor substrate (1). The input second-order harmonic matching circuit (19) includes a first capacitor (13), a first inductor (14), a second capacitor (15), and a second inductor (16). The first capacitor (13) and the first inductor (14) resonate at the frequency of a fundamental wave, and each of impedances as seen by input electrodes of the two unit transistor cells (7) and (8) is short-circuited at the frequency of a second-order harmonic.

Abstract: A gate electrode (3), a source electrode (4), and a drain electrode (5) is provided on a surface of the semiconductor substrate (1,2). An insulating film (6) covers the surface of the semiconductor substrate (1,2) in a region between the gate electrode (3) and the drain electrode (5). A source field plate (7) is provided on the insulating film (6) and not connected with the drain electrode (5). A diode (8) has a cathode connected with the source field plate (7) and an anode having a constant potential.

Abstract: A catalyst for synthesizing a conjugated diene from a raw material including an alcohol, which includes at least Ce and Zn as metal elements constituting the catalyst. An apparatus for producing a conjugated diene, including: a reaction tube (1) provided with the catalyst; a supply means for supplying a raw material gas containing the raw material into the reaction tube (1); and an outlet means for releasing a product from the reaction tube (1). A method for producing a conjugated diene, including contacting a raw material gas containing a raw material with the catalyst to obtain a conjugated diene. The amount of the raw material is preferably 10 to 50% by volume (in terms of gas volume) with respect to 100% by volume (in terms of gas volume) of the raw material gas.

Abstract: A bed apparatus includes: a mattress mounted on a bed body; and, first cells arranged on both left and right sides in a longitudinal direction of the bed body and is configured to change the body position of a patient on the mattress by inflating the first cells alternately. When the first cells on the left and right sides are inflated, and when a difference in pressure between the first cells on the left and right sides has continuously fallen within a decision pressure value range for a decision pressure value continuation time, the body position of the patient is changed, whereas when the difference has not continuously fallen within the pressure value range for the continuation time or when the difference has continuously fallen out of the pressure value range for the continuation time, change of the body position of the patient will not be performed.

Abstract: A field effect transistor according to the present invention includes a semiconductor substrate, a plurality of drain electrodes provided on a first surface of the semiconductor substrate and extending in a first direction, an input terminal, an output terminal, and a plurality of metal layers provided in the semiconductor substrate apart from the first surface and extending in a second direction crossing the first direction, in which the plurality of metal layers include a first metal layer and a second metal layer which is longer than the first metal layer and which crosses more drain electrodes than the first metal layer when seen from a direction perpendicular to the first surface, and among the plurality of drain electrodes, those having a smaller length of line from the input terminal to the output terminal are provided with more metal layers directly thereunder.

Abstract: A semiconductor device according to the present invention includes: a substrate; a heat generating portion provided on the substrate; a cap substrate provided above the substrate so that a hollow portion is provided between the substrate and the cap substrate; and a reflection film provided above the heat generating portion and reflecting a medium wavelength infrared ray. The reflection film reflects the infrared ray radiated to the cap substrate side through the hollow portion due to the temperature increase of the heat generating portion, so that the temperature increase of the cap substrate side can be suppressed. Because of this function, even if mold resin is provided on the cap substrate, increase of the temperature of the mold resin can be suppressed.

Abstract: A spring plate includes a central portion; an opening that is positioned at a center of the central portion; and a strip extending from a part of an inner edge of the opening that is positioned at the center of the central portion. The strip includes a first width that is positioned adjacent to the part of the inner edge of the opening and a second width that is positioned adjacent to an end of the strip. The first width of the strip is wider than the second width that is positioned adjacent to the end of the strip.

Abstract: A low travel switch assembly and systems and methods for using the same are disclosed. The low travel dome may include a domed surface having upper and lower portions, and a set of tuning members integrated within the domed surface between the upper and lower portions. The tuning members may be operative to control a force-displacement curve characteristic of the low travel dome.

Abstract: A primary object of this invention is to provide a method for operating a continuous casting machine with which a mold can oscillate with a predetermined oscillation waveform since the start of operation of an oscillator. This invention is a method for operating a continuous casting machine, the method comprising: withdrawing a slab from a mold while vertically oscillating the mold with an oscillation waveform represented by the following formula (1) by selecting a value of ? according to a value of b so that the following formula (1) satisfies r(0)=0: r(t)=(S/2){sin(?t+?)+b cos 2(?t+?)+b}??(1) where r(t): displacement of the mold (mm), S: vibration stroke of the mold S (mm), ?: angular velocity (=2?f) (rad/s), f: oscillation frequency of the mold (Hz), t: time(s), ?: initial phase (°), and b: non-sine coefficient (0<b?0.25).

Abstract: According to the present invention, a semiconductor device includes a transistor provided in a first substrate, a gate pad of the transistor, a conductive bump provided on the gate pad, a second substrate provided above the first substrate, a first electrode passing through from a first face to a second face of the second substrate and connected with the conductive bump on the second face side, a resistor connected to the first face side of the first electrode with its one end and connected to an input terminal with the other end and a second electrode provided adjacent to the first electrode on the first face and connected to the input terminal without interposing the resistor, wherein a gate leakage current of the transistor flows from the first electrode to the input terminal through a base material of the second substrate and the second electrode.

Abstract: Provided are a switch module and a push switch that have a soft sensation when pressed. A push switch and a switch module have a substrate, a first fixed contact point disposed on the substrate surface, a second fixed contact point disposed around the first fixed contact point on the substrate surface, a convex dome-shaped upper spring disposed on the substrate surface so that an end part is in contact with the second fixed contact point, the upper spring being pressed so as to invert the dome shape and to establish conduction between the first fixed contact point and the second fixed contact point, and a lower spring disposed below the upper spring, the lower spring adjusting the operation load applied to the upper spring during inversion of the dome shape.

Abstract: A field effect transistor includes: a semiconductor substrate having a main surface; a plurality of source electrodes and a plurality of drain electrodes alternately disposed and ohmic-connected with the main surface of the semiconductor substrate; a plurality of gate electrodes Schottky-connected with the main surface of the semiconductor substrate and respectively disposed between the plurality of source electrodes and the plurality of drain electrodes; and a Schottky electrode Schottky-connected with the main surface of the semiconductor substrate, wherein each of the plurality of drain electrodes has first and second portions separated from each other, a sum of widths of the first and second portions of each drain electrode is smaller than a width of one source electrode, the Schottky electrode is disposed between the first portion and the second portion of the drain electrode.

Abstract: A transistor includes: a semiconductor substrate; a plurality of gate electrodes, a plurality of source electrodes, and a plurality of drain electrodes on the semiconductor substrate; a drain pad on the semiconductor substrate and connected to the plurality of drain electrodes; a metal wiring on the semiconductor substrate and arranged spaced apart from, adjacent to and parallel to the drain pad; and a ground pad on the semiconductor substrate and connected to both ends of the metal wiring.

Abstract: Provided is a push switch that can be made thin without requiring that a notch be made into a mounting board. The push switch includes a substrate having a L-shaped cross section and wherein the substrate has a front surface, a back surface and a side face, an accommodating recess provided on the front surface, a center contact provided so as to be substantially centralized in the accommodating recess, a pair of peripheral contacts each provided at a circumferential edge of the accommodating recess, a movable contact spring constructed so as to extend across the pair of peripheral contacts and designed to be brought into contact with the center contact when pressed, a connection pad provided on the back surface and electrically connected to the mounting substrate, and an electrode provided on the side face and electrically connected to the connection pad.

Abstract: A low travel switch assembly and systems and methods for using the same are disclosed. The low travel dome may include a domed surface having upper and lower portions, and a set of tuning members integrated within the domed surface between the upper and lower portions. The tuning members may be operative to control a force-displacement curve characteristic of the low travel dome.

Abstract: A main purpose of the present invention is to provide a continuous casting method for a slab satisfying reductions of center segregation and center porosity, and inhibitions of surface cracks and internal cracks of a slab. The method includes a step of carrying out reduction on a slab having an unsolidified part by horizontal rolls and a step of alternatively carrying out reduction on the slab completely solidified by horizontal rolls and vertical rolls, wherein in the former step, reduction ratio of the slab is more than 0.5% and no more than 3% and a ratio of a width of the unsolidified part at the cross section of the slab to a width of a contact part of the slab and the rolls is 0 to 7.15, and in the latter step, each reduction ratio of the slab by the rolls is 5.4% to 6.8%.

Abstract: A low travel switch assembly and systems and methods for using the same are disclosed. The low travel dome may include a domed surface having upper and lower portions, and a set of tuning members integrated within the domed surface between the upper and lower portions. The tuning members may be operative to control a force-displacement curve characteristic of the low travel dome.