Abstract: A mechanism that enables developer replenishment by a simpler structure and a mechanism that enables more user-friendly developer replenishment are provided. An attachment port to which a developer supply bottle containing a developer stored therein is detachably attachable is disposed in an interior of an image forming apparatus. The developer supply bottle can be attached when the cover is in an open state. According to this image forming apparatus, when the developer supply bottle is attached to the attachment port, the developer inside the developer supply bottle moves into a developer housing chamber by its own weight.

Abstract: An image forming apparatus to and from which a replenishment container accommodating toner is attachable and detachable includes a replenishment port to allow replenishment of toner from the replenishment container, an opening/closing portion to open the replenishment port in an open position and close the replenishment port in a closed position, a locking member to move between a restricting position in which the locking member restricts movement of the opening/closing portion from the closed position to the open position, and an allowing position in which the movement of the opening/closing portion from the closed position to the open position is allowed. A developer container accepts more toner for replenishment in a case where a second display is in a second state than in a first state, and a first display more accurately displays information related to the toner accommodated in the developer container than the second display.

Abstract: The present invention relates to a high-frequency semiconductor device. A conventional high-frequency semiconductor device including an input second-order harmonic matching circuit has such a problem that gain decrease occurs. In a high-frequency semiconductor device (100) of the present invention, two adjacent unit transistor cells (7) and (8) are connected to one input second-order harmonic matching circuit (19) provided on an upper surface of a semiconductor substrate (1). The input second-order harmonic matching circuit (19) includes a first capacitor (13), a first inductor (14), a second capacitor (15), and a second inductor (16). The first capacitor (13) and the first inductor (14) resonate at the frequency of a fundamental wave, and each of impedances as seen by input electrodes of the two unit transistor cells (7) and (8) is short-circuited at the frequency of a second-order harmonic.

Abstract: A transistor according to the disclosure includes a semiconductor substrate, a source pad provided on an upper surface of the semiconductor substrate, a plurality of source electrodes provided on the upper surface of the semiconductor substrate and arranged in an arrangement direction, the plurality of source electrodes each including a first end connected to the source pad and a second end on a side opposite to the source pad, a plurality of drain electrodes arranged alternately with the plurality of source electrodes in the arrangement direction, a gate electrode and a first wire configured to connect the second ends of a plurality of central electrodes provided at a central part of the semiconductor substrate in the arrangement direction among the plurality of source electrodes, and not to connect the second ends of the source electrodes other than the plurality of central electrodes.

Abstract: A gate electrode (3), a source electrode (4), and a drain electrode (5) is provided on a surface of the semiconductor substrate (1,2). An insulating film (6) covers the surface of the semiconductor substrate (1,2) in a region between the gate electrode (3) and the drain electrode (5). A source field plate (7) is provided on the insulating film (6) and not connected with the drain electrode (5). A diode (8) has a cathode connected with the source field plate (7) and an anode having a constant potential.

Abstract: The present invention relates to a high-frequency semiconductor device. A conventional high-frequency semiconductor device including an input second-order harmonic matching circuit has such a problem that gain decrease occurs. In a high-frequency semiconductor device (100) of the present invention, two adjacent unit transistor cells (7) and (8) are connected to one input second-order harmonic matching circuit (19) provided on an upper surface of a semiconductor substrate (1). The input second-order harmonic matching circuit (19) includes a first capacitor (13), a first inductor (14), a second capacitor (15), and a second inductor (16). The first capacitor (13) and the first inductor (14) resonate at the frequency of a fundamental wave, and each of impedances as seen by input electrodes of the two unit transistor cells (7) and (8) is short-circuited at the frequency of a second-order harmonic.

Abstract: A catalyst for synthesizing a conjugated diene from a raw material including an alcohol, which includes at least Ce and Zn as metal elements constituting the catalyst. An apparatus for producing a conjugated diene, including: a reaction tube (1) provided with the catalyst; a supply means for supplying a raw material gas containing the raw material into the reaction tube (1); and an outlet means for releasing a product from the reaction tube (1). A method for producing a conjugated diene, including contacting a raw material gas containing a raw material with the catalyst to obtain a conjugated diene. The amount of the raw material is preferably 10 to 50% by volume (in terms of gas volume) with respect to 100% by volume (in terms of gas volume) of the raw material gas.

Abstract: A bed apparatus includes: a mattress mounted on a bed body; and, first cells arranged on both left and right sides in a longitudinal direction of the bed body and is configured to change the body position of a patient on the mattress by inflating the first cells alternately. When the first cells on the left and right sides are inflated, and when a difference in pressure between the first cells on the left and right sides has continuously fallen within a decision pressure value range for a decision pressure value continuation time, the body position of the patient is changed, whereas when the difference has not continuously fallen within the pressure value range for the continuation time or when the difference has continuously fallen out of the pressure value range for the continuation time, change of the body position of the patient will not be performed.

Abstract: A bed apparatus includes: a mattress mounted on a bed body; and, first cells arranged on both left and right sides in a longitudinal direction of the bed body and is configured to change the body position of a patient on the mattress by inflating the first cells alternately. When the first cells on the left and right sides are inflated, and when a difference in pressure between the first cells on the left and right sides has continuously fallen within a decision pressure value range for a decision pressure value continuation time, the body position of the patient is changed, whereas when the difference has not continuously fallen within the pressure value range for the continuation time or when the difference has continuously fallen out of the pressure value range for the continuation time, change of the body position of the patient will not be performed.

Abstract: A field effect transistor according to the present invention includes a semiconductor substrate, a plurality of drain electrodes provided on a first surface of the semiconductor substrate and extending in a first direction, an input terminal, an output terminal, and a plurality of metal layers provided in the semiconductor substrate apart from the first surface and extending in a second direction crossing the first direction, in which the plurality of metal layers include a first metal layer and a second metal layer which is longer than the first metal layer and which crosses more drain electrodes than the first metal layer when seen from a direction perpendicular to the first surface, and among the plurality of drain electrodes, those having a smaller length of line from the input terminal to the output terminal are provided with more metal layers directly thereunder.

Abstract: A switch unit includes a substrate, which includes a hard layer and a soft layer; a first contact point above the soft layer; a second contact point around the first contact point; a conduction spring member which is elastically deformable into contact with the first contact point to make a conduction between the first contact point and the second contact point; a first external electrode; a first through-hole electrode which is electrically connected to the first contact point; and a first wiring pattern, which is electrically connected to the first external electrode and the first through-hole electrode.

Abstract: A gate electrode (3), a source electrode (4), and a drain electrode (5) is provided on a surface of the semiconductor substrate (1,2). An insulating film (6) covers the surface of the semiconductor substrate (1,2) in a region between the gate electrode (3) and the drain electrode (5). A source field plate (7) is provided on the insulating film (6) and not connected with the drain electrode (5). A diode (8) has a cathode connected with the source field plate (7) and an anode having a constant potential.

Abstract: A field effect transistor according to the present invention includes a semiconductor substrate, a plurality of drain electrodes provided on a first surface of the semiconductor substrate and extending in a first direction, an input terminal, an output terminal, and a plurality of metal layers provided in the semiconductor substrate apart from the first surface and extending in a second direction crossing the first direction, in which the plurality of metal layers include a first metal layer and a second metal layer which is longer than the first metal layer and which crosses more drain electrodes than the first metal layer when seen from a direction perpendicular to the first surface, and among the plurality of drain electrodes, those having a smaller length of line from the input terminal to the output terminal are provided with more metal layers directly thereunder.

Abstract: A semiconductor device according to the present invention includes: a substrate; a heat generating portion provided on the substrate; a cap substrate provided above the substrate so that a hollow portion is provided between the substrate and the cap substrate; and a reflection film provided above the heat generating portion and reflecting a medium wavelength infrared ray. The reflection film reflects the infrared ray radiated to the cap substrate side through the hollow portion due to the temperature increase of the heat generating portion, so that the temperature increase of the cap substrate side can be suppressed. Because of this function, even if mold resin is provided on the cap substrate, increase of the temperature of the mold resin can be suppressed.

Abstract: A catalyst for synthesizing a conjugated diene from a raw material including an alcohol, which includes at least Ce and Zn as metal elements constituting the catalyst. An apparatus for producing a conjugated diene, including: a reaction tube (1) provided with the catalyst; a supply means for supplying a raw material gas containing the raw material into the reaction tube (1); and an outlet means for releasing a product from the reaction tube (1). A method for producing a conjugated diene, including contacting a raw material gas containing a raw material with the catalyst to obtain a conjugated diene. The amount of the raw material is preferably 10 to 50% by volume (in terms of gas volume) with respect to 100% by volume (in terms of gas volume) of the raw material gas.

Abstract: A semiconductor device according to the present invention includes: a substrate; a heat generating portion provided on the substrate; a cap substrate provided above the substrate so that a hollow portion is provided between the substrate and the cap substrate; and a reflection film provided above the heat generating portion and reflecting a medium wavelength infrared ray. The reflection film reflects the infrared ray radiated to the cap substrate side through the hollow portion due to the temperature increase of the heat generating portion, so that the temperature increase of the cap substrate side can be suppressed. Because of this function, even if mold resin is provided on the cap substrate, increase of the temperature of the mold resin can be suppressed.

Abstract: A spring plate includes a central portion; an opening that is positioned at a center of the central portion; and a strip extending from a part of an inner edge of the opening that is positioned at the center of the central portion. The strip includes a first width that is positioned adjacent to the part of the inner edge of the opening and a second width that is positioned adjacent to an end of the strip. The first width of the strip is wider than the second width that is positioned adjacent to the end of the strip.

Abstract: A low travel switch assembly and systems and methods for using the same are disclosed. The low travel dome may include a domed surface having upper and lower portions, and a set of tuning members integrated within the domed surface between the upper and lower portions. The tuning members may be operative to control a force-displacement curve characteristic of the low travel dome.