Abstract: A semiconductor module 10 includes a ceramic substrate having a front surface on which a semiconductor element 12 is mounted and a rear surface on the opposite side of the front surface, a front metal plate 15 joined to the front surface, a rear metal plate 16 joined to the rear surface, and a heat sink 13 joined to the rear metal plate 16. The rear metal plate 16 includes a joint surface 16b that faces the heat sink 13. The joint surface 16b includes a joint area and a non-joint area. The non-joint area includes recesses 18 which extend in the thickness direction of the rear metal plate 16. The joint area of the rear metal plate 16 is in a range from 65% to 85% of the total area of the joint surface 16b on the rear metal plate 16. As a result, excellent heat dissipating performance can be achieved while occurrence of distortion and cracking due to thermal stress is prevented.

Abstract: A heat radiator 1 includes an insulating substrate 3 whose first side serves as a heat-generating-element-mounting side, and a heat sink 5 fixed to a second side of the insulating substrate 3. A metal layer 7 is formed on a side of the insulating substrate 3 opposite the heat-generating-element-mounting side. A stress relaxation member 4 intervenes between the metal layer 7 of the insulating substrate 3 and the heat sink 5. The stress relaxation member 4 is formed of an aluminum plate 10 having a plurality of through holes 9 formed therein, and the through holes 9 serve as stress-absorbing spaces. The stress relaxation member 4 is brazed to the metal layer 7 of the insulating substrate 3 and to the heat sink 5. This heat radiator 1 is low in material cost and exhibits excellent heat radiation performance.

Abstract: A semiconductor device is disclosed that includes a ceramic substrate having first and second surfaces, a semiconductor element, a radiator, and an interposed portion located between the second surface and the radiator. The interposed portion has coupling regions that couple the second surface to the radiator, and non-coupling regions that do not couple the second surface to the radiator. Each non-coupling region is formed as an elongated groove. In the group of the non-coupling regions, the width of the outermost non-coupling region in the interposed portion is greater than the width of the innermost non-coupling region in the interposed portion. Regarding an adjacent pair of the non-coupling regions in the width direction, the width of the outer non-coupling region is greater than or equal to the width of the inner non-coupling region.

Abstract: A semiconductor device has a ceramic substrate having a first surface and a second surface, a metal layer that is coupled to the second surface, a heat sink that is coupled to the metal layer and a stress relaxation member. The stress relaxation member is arranged between the metal layer and the heat sink and has a first surface that is coupled to the metal layer and a second surface that is coupled to the heat sink. A plurality of stress relaxation spaces are provided over the entire surface of at least one of the first and second surfaces of the stress relaxation member. The stress relaxation spaces that are arranged at the outermost portions of the stress relaxation member are deeper than the other stress relaxation spaces.

Abstract: A method for manufacturing an aluminum heat exchanger includes the steps of: obtaining a heat exchanger tube 2 by forming a Zn thermally sprayed layer on a surface of an aluminum flat tube core so as to adjust Zn adhesion amount to 1 to 10 g/m2; obtaining a heat exchanger core by alternatively arranging the heat exchanger tube 2 and an aluminum fin 3 and brazing the heat exchanger tube and the fin with end portions of the heat exchanger tube connected to aluminum headers in fluid communication; and forming a chemical conversion treatment coat (corrosion resistance coat) on a surface of the heat exchanger core by subjecting the surface of the heat exchanger core to chemical conversion treatment using at least one chemical conversion treatment agent selected from the group consisting of phosphoric acid chromate, chromic acid chromate, phosphoric acid zirconium series, phosphoric acid titanium series, fluoridation zirconium series, and fluoridation titanium series.

Abstract: A method for manufacturing an aluminum heat exchanger includes the steps of: obtaining a heat exchanger tube 2 by forming a Zn thermally sprayed layer on a surface of an aluminum flat tube core so as to adjust Zn adhesion amount to 1 to 10 g/m2; obtaining a heat exchanger core by alternatively arranging the heat exchanger tube 2 and an aluminum fin 3 and brazing the heat exchanger tube and the fin with end portions of the heat exchanger tube connected to aluminum headers in fluid communication; and forming a chemical conversion treatment coat (corrosion resistance coat) on a surface of the heat exchanger core by subjecting the surface of the heat exchanger core to chemical conversion treatment using at least one chemical conversion treatment agent selected from the group consisting of phosphoric acid chromate, chromic acid chromate, phosphoric acid zirconium series, phosphoric acid titanium series, fluoridation zirconium series, and fluoridation titanium series.

Abstract: An evaporator 1 comprises a flat tube 2 bent zigzag, and a corrugated fin 3 disposed between each adjacent pair of straight tube portions 2a of the flat tube 2 and brazed thereto by the flux brazing method. The flux remains on the surface of the portion of the corrugated fin 3 not brazed to the straight tube portions 2a in an amount of 0.03 to 1 g/m2. @ The evaporator 1 is fabricated by a process including applying the flux in an amount of 0.05 to 2.8 g/m2 to the outer surface of a zigzag flat tube 2, disposing a corrugated fin 3 between each adjacent pair of straight tube portions 2a of the flat tube 2 and brazing the fin 3 to the flat tube 2. The evaporator 1 can be effectively inhibited from emanating odor.

Abstract: The heat exchanger according to the present invention includes a heat exchanger component in which a fluoride layer 10 is formed at the surface layer portion. It is preferable that the fluoride layer 10 falls within the range of from 2 nm to 10 &mgr;m in thickness. It is preferable that the component is at least one of a fin and a plate. Furthermore, it is preferable that the fluoride layer 10 is formed on a substrate via an intermediate layer 2. It is preferable that the intermediate layer 2 includes an anodized oxide layer 3 and/or a nickel plated layer 4. The heat exchanger is excellent in corrosion resistance against water, vapor and the like The heat exchanger is preferably used, especially, for a fuel cell.

Abstract: A treatment method for hydrophilicity for a heat exchanger which can maintain the deodorizing property and hydrohilicity even after a long-time use, and a heat exchanger thus treated for hydrophilicity by said method are provided.

Abstract: A treatment method for hydrophilicity for a heat exchanger which can maintain the deodorizing property and hydrohilicity even after a long-time use, and a heat exchanger thus treated for hydrophilicity by said method are provided.