Abstract: A Schottky barrier diode includes a graphene nanoribbon, a first electrode connected to one end of the graphene nanoribbon, and a second electrode connected to the other end of the graphene nanoribbon. The graphene nanoribbon includes a first part and a second part which are connected in the length direction of the graphene nanoribbon and which differ in electronic state. For example, edges of the first part in a length direction of the graphene nanoribbon are terminated with a first modifying group and edges of the second part in the length direction of the graphene nanoribbon are terminated with a second modifying group.

Abstract: Based on a user operation on an operation unit, an operation target is controlled in a virtual space, and it is determined whether or not the operation target is in a predetermined situation in the virtual space. Then, a vibration signal for vibrating a vibration unit is generated in accordance with the state of the operation target in the virtual space, and the vibration signal is generated by associating a plurality of types of vibrations with a plurality of states of the operation target. When it is determined that the operation target is in the predetermined situation, the vibration signal is generated so that regarding a first type of vibration among the plurality of types of vibrations, the vibration is weaker than in a case where it is not determined that the operation target is in the predetermined situation, or the vibration disappears.

Abstract: An electronic device includes: a nanocarbon material; a pair of electrodes that is electrically connected to the nanocarbon material; a lower layer that is formed under the nanocarbon material and is made of at least one kind of a molecular material having a doping function; and an upper layer that is formed on the nanocarbon material and is made of at least two kinds of molecular materials having doping functions whose polarities are reverse to each other, in which the nanocarbon material constitutes one type selected from among an NPN structure, a PNP structure, an N+P?P+ structure, and a P+N?N+ structure in a region between the pair of electrodes by the lower layer and the upper layer. By this constitution, a highly reliable electronic device including a band gap formed by the molecular materials and using the nanocarbon material as a channel with a relatively simple structure is fabricated.

Abstract: An information processing system includes a controller which receives an operation input of a user and an information processing unit which performs an information process based on the operation input received by the controller. The information processing unit includes a game progress unit which controls an own character in the virtual space based on the operation input of the user to draw the virtual space with the corresponding color of the own character and a battle determination unit which performs a battle determination based on a drawing state of a corresponding color of an enemy character, which is different from the corresponding color of the own character, to a virtual space and a drawing state of the corresponding color of the own character to the virtual space.

Abstract: An information processing system includes a controller which receives an operation input of a user and an information processing unit which performs an information process based on the operation input received by the controller. The information processing unit includes a game progress unit which controls an own character in the virtual space based on the operation input of the user to draw the virtual space with the corresponding color of the own character and a battle determination unit which performs a battle determination based on a drawing state of a corresponding color of an enemy character, which is different from the corresponding color of the own character, to a virtual space and a drawing state of the corresponding color of the own character to the virtual space.

Abstract: A connecting structure includes: a Si substrate; a nanocarbon material formed above the Si substrate; and an electrode electrically connected to the nanocarbon material, wherein a molecular material having a doping function is inserted between the Si substrate and the nanocarbon material. With this configuration, a highly-reliable connecting structure and a method for manufacturing the same are obtained which realize, even though using the nanocarbon material, a sufficiently low contact resistance between the nanocarbon material and the electrode.

Abstract: A gas sensor includes: a semiconductor layer; a graphene film provided above the semiconductor layer and having at least a portion in contact with gas; and a barrier film between the semiconductor layer and the graphene film.

Abstract: An example information processing system includes a main body apparatus, a handheld console controller, and a wireless controller. The handheld console controller is configured to be unified with the main body apparatus. The wireless controller is configured to be wirelessly connected to the main body apparatus. The main body apparatus sets one of the handheld console controller and the wireless controller, a predetermined button of which has been pressed down, to “active,” and performs a game process based on operation data from the activate controller.

Abstract: An information processing system includes a controller which receives an operation input of a user and an information processing unit which performs an information process based on the operation input received by the controller. The information processing unit includes a game progress unit which controls an own character in the virtual space based on the operation input of the user to draw the virtual space with the corresponding color of the own character and a battle determination unit which performs a battle determination based on a drawing state of a corresponding color of an enemy character, which is different from the corresponding color of the own character, to a virtual space and a drawing state of the corresponding color of the own character to the virtual space.

Abstract: A GNR is a ribbon-shaped graphene film which includes: five or more (for example, five, seven, or nine) six-membered rings of carbon atoms which are bonded and arranged in line in a short side direction; and a complete armchair type edge structure along a long side direction. By such a constitution, without using a transfer method, there are materialized a highly reliable graphene film which has an armchair type edge structure with a uniform width at a desired value and which enables an electric current on-off ratio of 105 or more that is practically sufficient for exhibiting a desired band gap.

Abstract: A semiconductor device including a graphene layer and a method of manufacturing the same are disclosed. A method in which graphene is grown on a catalyst metal by a chemical vapor deposition or the like is known. However, the graphene cannot be used as a channel, since the graphene is in contact with the catalyst metal, which is conductive. There is disclosed a method in which a catalyst film (2) is formed over a substrate (1), a graphene layer (3) is grown originating from the catalyst film (2), an electrode (4) in contact with the graphene layer (3) is formed, and the catalyst film (2) is removed.

Abstract: A Schottky barrier diode includes a graphene nanoribbon, a first electrode connected to one end of the graphene nanoribbon, and a second electrode connected to the other end of the graphene nanoribbon. The graphene nanoribbon includes a first part and a second part which are connected in the length direction of the graphene nanoribbon and which differ in electronic state. For example, edges of the first part in a length direction of the graphene nanoribbon are terminated with a first modifying group and edges of the second part in the length direction of the graphene nanoribbon are terminated with a second modifying group.

Abstract: A gas sensor includes: a channel layer in which a F-terminated GNR, a H-terminated GNR, and a F-terminated GNR whose edge portions are terminated with different modifying groups are bonded to each other; a source electrode formed on one end of the channel layer; and a drain electrode formed on the other end of the channel layer, in which a surface of the H-terminated GNR is exposed, and this exposed portion is a gas sensing part.

Abstract: A transistor includes a channel layer in which a plurality of graphene whose edge portions are terminated with modifying groups different from each other are bonded to each other; a gate electrode formed on the channel layer via a gate insulating film; and a source electrode and a drain electrode formed on the channel layer.

Abstract: A wiring structure is made up by electrically connecting a via part made up by forming CNTs in a via hole and a wiring part made up of multilayer graphene on an interlayer insulating film via a metal block such as Cu. In the wiring structure using the CNTs at the via part and the graphene at the wiring part, it is thereby possible to obtain the wiring structure with high reliability enabling a certain electrical connection between the CNTs and the graphene with a relatively simple configuration.

Abstract: The graphite structure includes a plurality of domains of graphite where a layer body of graphene sheets is curved in domelike, wherein the plurality of domains are arranged in plane, and the domains adjacent each other are in contact with each other.

Abstract: A gas sensor includes: a channel layer in which a F-terminated GNR, a H-terminated GNR, and a F-terminated GNR whose edge portions are terminated with different modifying groups are bonded to each other; a source electrode formed on one end of the channel layer; and a drain electrode formed on the other end of the channel layer, in which a surface of the H-terminated GNR is exposed, and this exposed portion is a gas sensing part.

Abstract: A semiconductor device including a graphene layer and a method of manufacturing the same are disclosed. A method in which graphene is grown on a catalyst metal by a chemical vapor deposition or the like is known. However, the graphene cannot be used as a channel, since the graphene is in contact with the catalyst metal, which is conductive. There is disclosed a method in which a catalyst film (2) is formed over a substrate (1), a graphene layer (3) is grown originating from the catalyst film (2), an electrode (4) in contact with the graphene layer (3) is formed, and the catalyst film (2) is removed.

Abstract: A semiconductor device including a graphene layer and a method of manufacturing the same are disclosed. A method in which graphene is grown on a catalyst metal by a chemical vapor deposition or the like is known. However, the graphene cannot be used as a channel, since the graphene is in contact with the catalyst metal, which is conductive. There is disclosed a method in which a catalyst film (2) is formed over a substrate (1), a graphene layer (3) is grown originating from the catalyst film (2), an electrode (4) in contact with the graphene layer (3) is formed, and the catalyst film (2) is removed.

Abstract: A method manufactures a semiconductor device which allows nanocarbon materials, such as high-quality graphene and carbon nanotube to be used. The method of manufacturing the semiconductor device comprises forming on a substrate a wiring structure including wires of nanocarbon material; forming on the wiring structure an element structure including a semiconductor element; and interconnecting the wires of the wiring structure and the semiconductor element of the element structure.