Abstract: The present disclosure relates to methods and apparatuses for depositing a transition metal nitride-containing material on a substrate in the field of manufacturing semiconductor devices. Methods according to the current disclosure comprise a cyclic deposition process, in which a substrate is provided in a reaction chamber, an organometallic transition metal precursor is provided to the reaction chamber in a vapor phase, and a nitrogen precursor is provided into the reaction chamber in a vapor phase to form a transition metal nitride on the substrate. The disclosure further relates to a transition metal nitride layer, to a semiconductor structure and a device, as well as to a deposition assembly for depositing a transition metal nitride on a substrate.

Abstract: The disclosure relates to methods of selectively depositing material comprising a group 3 to 6 transition metal on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process. The method includes providing a substrate in a reaction chamber, providing a transition metal precursor into the reaction chamber in a vapor phase, wherein the transition metal precursor comprises an aromatic ligand and providing a second precursor into the reaction chamber in a vapor phase to deposit transition metal on the first surface of the substrate. The disclosure further relates to a transition metal layers, and to deposition assemblies.

Abstract: An image sensor includes a plurality of pixels. Each pixel includes a photoelectric conversion portion, a reset gate for controlling removal of a charge accumulated in the photoelectric conversion portion, a charge accumulation portion, an accumulation gate for controlling a transfer of the charge from the photoelectric conversion portion to the charge accumulation portion, and a readout gate for controlling readout of the charge from the charge accumulation portion. The reset gate removes the charge generated in the photoelectric conversion portion by excitation light. The accumulation gate transfers the charge generated in the photoelectric conversion portion by fluorescence to the charge accumulation portion. The readout gate performs control for reading out the charge after the charge transfer is performed n times. The number n of the charge transfers is set for each pixel.

Abstract: Methods are provided for depositing a transition metal nitride-containing material on a substrate in the field of manufacturing semiconductor devices. Methods according to the current disclosure comprise a cyclic deposition process, in which a substrate is provided in a reaction chamber, an organometallic transition metal precursor is provided to the reaction chamber in a vapor phase, and a nitrogen precursor is provided into the reaction chamber in a vapor phase to form a transition metal nitride on the substrate. A transition metal nitride layer, a semiconductor structure and a device, as well as a deposition assembly for depositing a transition metal nitride on a substrate are further provided.

Abstract: Systems and methods are described for depositing a TiN liner layer and a cobalt seed layer on a semiconductor wafer in a cobalt metallization process. In some embodiments the wafer is cooled after deposition of the TiN liner layer and/or the cobalt seed layer. In some embodiments the TiN liner layer and cobalt seed layer are deposited in process modules that are part of a semiconductor processing apparatus that also includes one or more modules for cooling the substrate. In some embodiments the cobalt seed layer may comprise a mixture of TiN and cobalt, a nanolaminate of TiN and cobalt layers or a graded TiN/Co layer.

Abstract: A multi-nozzle device includes a nozzle body having a chamber into which fluid enters, a reference nozzle and a specific nozzle. The reference nozzle and the specific nozzle are each provided in the nozzle body. The inflow ends of the nozzles are communicated to the chamber. The outflow ends of the nozzles protrude from an end surface of the nozzle body. A length of the specific nozzle and a length of the reference nozzle differ from each other depending on the target discharge amount of the reference nozzle and the target discharge amount of the specific nozzle. An inner diameter of the specific nozzle and an inner diameters and of the reference nozzles and may be different from each other.

Abstract: When a titanium-containing gas and an oxidizing gas, or a silicon-containing gas and a nitriding gas, are alternately supplied from a gas supplier and radio frequency power is supplied to each of a first electrode and a second electrode from a power supply, parallel to the supply of the oxidizing gas or the nitriding gas, so as to generate plasma and to perform a film formation, a magnitude of the radio frequency power to be supplied to each of the first electrode and the second electrode is controlled.

Abstract: Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method comprises filling the gap with a metal-containing material.

Abstract: A film forming apparatus includes a vacuum-evacuable processing chamber, a lower electrode for mounting thereon a target substrate, an upper electrode disposed to face the lower electrode, a gas supply unit, a voltage application unit and a switching unit. The gas supply unit supplies a film forming source gas to be formed into plasma to a processing space between the upper and the lower electrode. The voltage application unit applies to the upper electrode a voltage outputted from at least one of a high frequency power supply and a DC power supply included therein. The switching unit selectively switches the voltage to be applied to the upper electrode among a high frequency voltage outputted from the high frequency power supply, a DC voltage outputted from the DC power supply, and a superimposed voltage in which the DC voltage is superimposed with the high frequency voltage.

Abstract: A control apparatus, an access control method, and non-transitory recording medium storing a plurality of instructions. The control apparatus transmits to an administrator terminal, screen data for accepting input of requested settings including host information for identifying the access target server and condition information indicating conditions for controlling access to the access target server, receives the requested settings from the administrator terminal, stores access control settings associating the host information and the condition information based on the received requested settings, receives an access request to a particular access target server from the communication terminal, and transmits a response to the access request to the communication terminal based on a scheduled access time indicated by the received access request and a condition indicated by condition information associated with host information for identifying the particular access target server.

Abstract: A plasma processing method according to an embodiment is performed in a state in which a substrate is placed on a support stage in an internal space of a chamber body. In the plasma processing method, a plasma treatment is performed on the substrate. Subsequently, a phase of a voltage of a lower electrode is relatively adjusted with respect to a phase of a voltage of an upper electrode by a phase adjustment circuit, such that a thickness of a sheath between the support stage and plasma without extinguishing the plasma generated in order to perform the plasma treatment. Thereafter, in a state in which supply of a high-frequency power is stopped, gases and particles in the internal space of the chamber body are discharged using an exhaust device.

Abstract: Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises at least partially filling the gap with a gap filling fluid. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

Abstract: The current disclosure relates to methods of depositing molybdenum on a substrate. The disclosure further relates to a molybdenum layer, to a structure and to a device comprising a molybdenum layer. In the method, molybdenum is deposited on a substrate by a cyclical deposition process, and the method comprises providing a substrate in a reaction chamber, providing a molybdenum precursor to the reaction chamber in a vapor phase and providing a reactant to the reaction chamber in a vapor phase to form molybdenum on the substrate. The molybdenum precursor comprises a molybdenum atom and a hydrocarbon ligand, and the reactant comprises a hydrocarbon comprising two or more halogen atoms, and at least two halogen atoms are attached to different carbon atoms.

Abstract: Methods for cleaning a substrate are disclosed. The substrate comprises a dielectric surface and a metal surface. The methods comprise providing a cleaning agent to the reaction chamber.

Abstract: In a plasma processing apparatus, a processing chamber is provided. First electrodes are disposed inside the processing chamber and supplied with radio frequency powers. The second electrode is disposed inside the processing chamber and functions as a counter electrode for the first electrodes. The power supply source supplies radio frequency powers to the first electrodes to generate plasma between the first electrodes and the second electrode and process a target object using the plasma. The allocation setting unit is disposed between the power supply source and at least one of the first electrodes to set power allocations of the radio frequency powers to be supplied to the first electrodes. Further, the allocation setting unit has series circuits in each of which an impedance circuit and a switching element are connected in series. The series circuits are connected in parallel. The control device controls the switching elements in the series circuits.

Abstract: When a titanium-containing gas and an oxidizing gas, or a silicon-containing gas and a nitriding gas, are alternately supplied from a gas supplier and radio frequency power is supplied to each of a first electrode and a second electrode from a power supply, parallel to the supply of the oxidizing gas or the nitriding gas, so as to generate plasma and to perform a film formation, a magnitude of the radio frequency power to be supplied to each of the first electrode and the second electrode is controlled.

Abstract: A film forming apparatus includes: a processing container; a support mechanism configured to support a substrate to be capable of being raised and lowered; a first gas supplier configured to supply a first gas to a front surface of the substrate supported on the support mechanism; a second gas supplier configured to supply a second gas to a rear surface of the substrate supported on the support mechanism; and a third gas supplier configured to supply a third gas to at least one of the front surface and the rear surface of the substrate supported on the support mechanism.

Abstract: A film forming apparatus 1 includes a plasma generating mechanism 47 commonly used for plasmarizing a processing gas and a cleaning gas supplied into a processing vessel 11 in which a vacuum atmosphere is formed; an exhaust device 17 configured to evacuate an exhaust line 61 connected to a processing gas discharge unit 43 while the plasmarization of the cleaning gas is being performed by the plasma generating mechanism 47; a tank 62 provided at the exhaust line 61; and a valve V2 which is provided at the exhaust line 61 between the tank 62 and the processing gas discharge unit 43. The valve V2 is configured to be closed to reduce an internal pressure of the tank 62 and opened to attract the plasmarized cleaning gas into the tank 62 from a processing space 40 through the processing gas discharge unit 43.

Abstract: Systems and methods are described for depositing a TiN liner layer and a cobalt seed layer on a semiconductor wafer in a cobalt metallization process. In some embodiments the wafer is cooled after deposition of the TiN liner layer and/or the cobalt seed layer. In some embodiments the TiN liner layer and cobalt seed layer are deposited in process modules that are part of a semiconductor processing apparatus that also includes one or more modules for cooling the substrate. In some embodiments the cobalt seed layer may comprise a mixture of TiN and cobalt, a nanolaminate of TiN and cobalt layers or a graded TiN/Co layer.

Abstract: A network device includes a plurality of network interfaces respectively connected to a plurality of authentication servers that reside on different communication networks; and circuitry to: in response to reception of an authentication request from an information processing apparatus, select one of the plurality of authentication servers to be a transmission destination of the authentication request, based on condition information associated with the plurality of network interfaces; transmit the authentication request to the selected authentication server using one of the plurality of networks associated with the selected authentication server, and control transmission of authentication information to the information processing apparatus, based on an authentication result received from the selected authentication server in response to the authentication request.