Abstract: A plasma processing method according to an embodiment is performed in a state in which a substrate is placed on a support stage in an internal space of a chamber body. In the plasma processing method, a plasma treatment is performed on the substrate. Subsequently, a phase of a voltage of a lower electrode is relatively adjusted with respect to a phase of a voltage of an upper electrode by a phase adjustment circuit, such that a thickness of a sheath between the support stage and plasma without extinguishing the plasma generated in order to perform the plasma treatment. Thereafter, in a state in which supply of a high-frequency power is stopped, gases and particles in the internal space of the chamber body are discharged using an exhaust device.

Abstract: Disclosed is a film forming method including forming a metal oxide film on a base film by alternately supplying a metal-containing gas and a plasmatized oxidizing gas. The metal-containing gas is changed from a first metal-containing gas having no halogen to a second metal-containing gas different from the first metal-containing gas during the film forming of the metal oxide film.

Abstract: A communication control apparatus includes circuitry that includes a memory that stores a first list including a first condition that associates an address indicating a location on a network with information and a second list including a second condition that associates identification information identifying a communication protocol with information indicating whether or not allow communication using the communication protocol and circuitry that outputs display control information to display the first list and the second list, receives an input of a request to modify the displayed first list and the second list, generates communication control information in accordance with the modified first list and the second list in response to the input request, and transfers the generated communication control information via the network to a transfer apparatus, to cause the transfer apparatus to control communication to be performed via a first communication interface for connecting the network and a second communicati

Abstract: A control apparatus, an access control method, and non-transitory recording medium storing a plurality of instructions. The control apparatus transmits to an administrator terminal, screen data for accepting input of requested settings including host information for identifying the access target server and condition information indicating conditions for controlling access to the access target server, receives the requested settings from the administrator terminal, stores access control settings associating the host information and the condition information based on the received requested settings, receives an access request to a particular access target server from the communication terminal, and transmits a response to the access request to the communication terminal based on a scheduled access time indicated by the received access request and a condition indicated by condition information associated with host information for identifying the particular access target server.

Abstract: A film forming apparatus includes a vacuum-evacuable processing chamber, a lower electrode for mounting thereon a target substrate, an upper electrode disposed to face the lower electrode, a gas supply unit, a voltage application unit and a switching unit. The gas supply unit supplies a film forming source gas to be formed into plasma to a processing space between the upper and the lower electrode. The voltage application unit applies to the upper electrode a voltage outputted from at least one of a high frequency power supply and a DC power supply included therein. The switching unit selectively switches the voltage to be applied to the upper electrode among a high frequency voltage outputted from the high frequency power supply, a DC voltage outputted from the DC power supply, and a superimposed voltage in which the DC voltage is superimposed with the high frequency voltage.

Abstract: A substrate processing method for removing an oxide film formed on the surface of a substrate includes modifying the oxide film into a reaction product by supplying a halogen element-containing gas and an alkaline gas onto the substrate accommodated in the interior of a processing chamber, and sublimating the reaction product by stopping the supply of the halogen element-containing gas into the processing chamber for removal from the substrate, wherein an internal pressure of the processing chamber in the sublimating is set to be higher than an internal pressure of the processing chamber in the modifying by supplying an inert gas into the processing chamber.

Abstract: A network device includes a plurality of network interfaces respectively connected to a plurality of authentication servers that reside on different communication networks; and circuitry to: in response to reception of an authentication request from an information processing apparatus, select one of the plurality of authentication servers to be a transmission destination of the authentication request, based on condition information associated with the plurality of network interfaces; transmit the authentication request to the selected authentication server using one of the plurality of networks associated with the selected authentication server, and control transmission of authentication information to the information processing apparatus, based on an authentication result received from the selected authentication server in response to the authentication request.

Abstract: Disclosed is a film forming method including forming a metal oxide film on a base film by alternately supplying a metal-containing gas and a plasmatized oxidizing gas. The metal-containing gas is changed from a first metal-containing gas having no halogen to a second metal-containing gas different from the first metal-containing gas during the film forming of the metal oxide film.

Abstract: A control apparatus, connectable with an external terminal and an information processing apparatus, includes circuitry configured to identify the information processing apparatus to receive target data, output from the external terminal, based on a condition uniquely set for the information processing apparatus, receive the target data output from the external terminal, and transmit the target data, received from the external terminal, to the identified information processing apparatus being a data transmission destination.

Abstract: A film forming apparatus 1 includes a plasma generating mechanism 47 commonly used for plasmarizing a processing gas and a cleaning gas supplied into a processing vessel 11 in which a vacuum atmosphere is formed; an exhaust device 17 configured to evacuate an exhaust line 61 connected to a processing gas discharge unit 43 while the plasmarization of the cleaning gas is being performed by the plasma generating mechanism 47; a tank 62 provided at the exhaust line 61; and a valve V2 which is provided at the exhaust line 61 between the tank 62 and the processing gas discharge unit 43. The valve V2 is configured to be closed to reduce an internal pressure of the tank 62 and opened to attract the plasmarized cleaning gas into the tank 62 from a processing space 40 through the processing gas discharge unit 43.

Abstract: A communication control apparatus includes circuitry that includes a memory that stores a first list including a first condition that associates an address indicating a location on a network with information and a second list including a second condition that associates identification information identifying a communication protocol with information indicating whether or not allow communication using the communication protocol and circuitry that outputs display control information to display the first list and the second list, receives an input of a request to modify the displayed first list and the second list, generates communication control information in accordance with the modified first list and the second list in response to the input request, and transfers the generated communication control information via the network to a transfer apparatus, to cause the transfer apparatus to control communication to be performed via a first communication interface for connecting the network and a second communicati

Abstract: A substrate processing method for removing an oxide film formed on the surface of a substrate includes modifying the oxide film into a reaction product by supplying a halogen element-containing gas and an alkaline gas onto the substrate accommodated in the interior of a processing chamber, and sublimating the reaction product by stopping the supply of the halogen element-containing gas into the processing chamber for removal from the substrate, wherein an internal pressure of the processing chamber in the sublimating is set to be higher than an internal pressure of the processing chamber in the modifying by supplying an inert gas into the processing chamber.