Abstract: A lamination includes: a substrate made of a metal or an alloy; an intermediate layer formed on a surface of the substrate and made of nickel or an alloy including nickel; and a metal film formed by accelerating, towards a surface of the intermediate layer, a powder material of aluminum or an aluminum alloy together with a gas heated to a temperature lower than a melting point of the powder material and spraying the powder material in a solid phase to the intermediate layer and causing the powder material to be deposited on the intermediate layer.

Abstract: A conductive member includes: a conductive member main body portion that has Vickers hardness equal to or greater than 100Hv and is made of copper or a copper alloy; and a film layer that is formed on an end face of the conductive member main body portion and is made of aluminum or an aluminum alloy. The film layer is formed by accelerating a powder material of aluminum or an aluminum alloy together with a gas heated to a temperature lower than a melting point of the powder material, spraying the powder material still remaining in a solid phase onto an end face of the conductive member main body portion, and causing the powder material to be deposited thereon.

Abstract: A space transformer includes: a ceramic substrate that contains enstatite and boron nitride as components; a through hole running through in a thickness direction with respect to a sintered body in which the boron nitride is oriented in one direction; conductive material provided inside the through hole; and a wiring pattern including a plurality of electrodes provided on each of two principal surfaces, wherein a wiring pitch in the wiring pattern on one principal surface is different from a wiring pitch in the wiring pattern on the other principal surface.

Abstract: There is provided a ceramic member which is a sintered body containing enstatite and boron nitride as constituents, in which boron nitride is oriented in a single direction, a probe holder formed using the ceramic member, and a manufacturing method of the ceramic member. In the ceramic member, an index of orientation degree is not less than 0.8. In so doing, it is possible to provide a ceramic member which has a free machining property, a coefficient of thermal expansion which is close to that of silicon, and high strength, and a probe holder which is formed using the ceramic member, and a manufacturing method of the ceramic member.

Abstract: A space transformer includes: a ceramic substrate that contains enstatite and boron nitride as components; a through hole running through in a thickness direction with respect to a sintered body in which the boron nitride is oriented in one direction; conductive material provided inside the through hole; and a wiring pattern including a plurality of electrodes provided on each of two principal surfaces, wherein a wiring pitch in the wiring pattern on one principal surface is different from a wiring pitch in the wiring pattern on the other principal surface.

Abstract: To provide a ceramic member having a thermal expansion coefficient close to that of silicon and has satisfactory workability, a probe holder formed by using this ceramic member, and a method of manufacturing the ceramic member. For this purpose, at least mica and silicon dioxide are mixed and an external force oriented in one direction is caused to act on this mixed mixture to sinter the mixture. It is more preferable that, in the mixture, a volume content of the mica is 70 to 90 volume % and a volume content of the silicon dioxide is 10 to 30 volume %.

Abstract: There is provided a ceramic member which is a sintered body containing enstatite and boron nitride as constituents, in which boron nitride is oriented in a single direction, a probe holder formed using the ceramic member, and a manufacturing method of the ceramic member. In the ceramic member, an index of orientation degree is not less than 0.8. In so doing, it is possible to provide a ceramic member which has a free machining property, a coefficient of thermal expansion which is close to that of silicon, and high strength, and a probe holder which is formed using the ceramic member, and a manufacturing method of the ceramic member.

Abstract: Provided are a ceramic member being a sintered body including at least forsterite and boron nitride as major components, and in which the boron nitride is oriented in one direction, a probe holder formed by using the ceramic member, and a method for manufacturing the ceramic member. In the ceramic member, the index of orientation preference is equal to or lower than 0.07, and the coefficient of thermal expansion at 20 to 300° C. in a direction parallel to the direction of orientation is (3 to 5)×10?6/° C., or the three-point bending strength based on JIS R 1601 is equal to or higher than 250 MPa.

Abstract: An insulation coating method for a metal base comprises a thermal spraying step, an impregnation step, and a beam irradiation step. In the thermal spraying step, a first insulation coating is formed by thermally spraying a first metal oxide to the surface of the metal base. In the impregnation step, pores formed in the surface of the first insulation coating are impregnated with a sol that contains, as a dispersoid, a metal oxide, a hydrate of a metal oxide, or a metal hydroxide. In the beam irradiation step, a second insulation coating that is composed of a second metal oxide is formed by irradiating the first insulation coating and the sol with a high energy beam after the impregnation step.

Abstract: A wiring substrate that allows wiring at a fine pitch and has a coefficient of thermal expansion close to the coefficient of thermal expansion of silicone, and a probe card that includes the wiring substrate are provided. To this end, there are provided a wiring substrate that includes a ceramic substrate having a coefficient of thermal expansion of 3×10?6 to 5×10?6/° C. and one or more thin-film wiring sheets stacked on one surface of the ceramic substrate, and a probe head on which a plurality of conductive proves are arranged in accordance with wiring on the thin-film wiring sheet, which holds individual probes while preventing the probes from coming off and allowing both ends of each probe to be exposed, and which is stacked on the wiring substrate while one end of each probe is brought into contact with the thin-film wiring sheet.

Abstract: Provided are a ceramic member being a sintered body including at least forsterite and boron nitride as major components, and in which the boron nitride is oriented in one direction, a probe holder formed by using the ceramic member, and a method for manufacturing the ceramic member. In the ceramic member, the index of orientation preference is equal to or lower than 0.07, and the coefficient of thermal expansion at 20 to 300° C. in a direction parallel to the direction of orientation is (3 to 5)×10?6/° C., or the three-point bending strength based on JIS R 1601 is equal to or higher than 250 MPa.

Abstract: A conductive contact holder includes a holder substrate and a holding member. The holder substrate is made of a conductive material and has an opening for holding a conductive contact for inputting and outputting a signal to and from a circuit structure. The holding member is formed by filling the opening with an insulating material, smoothing the surface of the insulating material, and forming a hole through the insulating material for inserting the conductive contact.

Abstract: A wiring substrate that allows wiring at a fine pitch and has a coefficient of thermal expansion close to the coefficient of thermal expansion of silicone, and a probe card that includes the wiring substrate are provided. To this end, there are provided a wiring substrate that includes a ceramic substrate having a coefficient of thermal expansion of 3×10?6 to 5×10?6/° C. and one or more thin-film wiring sheets stacked on one surface of the ceramic substrate, and a probe head on which a plurality of conductive proves are arranged in accordance with wiring on the thin-film wiring sheet, which holds individual probes while preventing the probes from coming off and allowing both ends of each probe to be exposed, and which is stacked on the wiring substrate while one end of each probe is brought into contact with the thin-film wiring sheet.

Abstract: When a branch instruction is decoded by the instruction decoders 409a˜409c, the upper 29 bits of the PC relative value included in the branch instruction are sent to the upper PC calculator 411 and the lower 3 bits are sent to the lower PC calculator 405. The lower PC calculator 405 adds the lower 3 bits of the PC relative value and the lower 3 bits of the present lower PC 404 and sends the result to the lower PC 404 as the updated lower PC. The upper PC calculator 411 adds the upper 29 bits of the PC relative value, the upper 29 bits of the present upper PC 403, and a carry that may be received from the lower PC calculator 405, and sends the result to the upper PC 403 as the updated upper PC.

Abstract: A conductive contact holder includes a holder substrate and a holding member. The holder substrate is made of a conductive material and has an opening for holding a conductive contact for inputting and outputting a signal to and from a circuit structure. The holding member is formed by filling the opening with an insulating material, smoothing the surface of the insulating material, and forming a hole through the insulating material for inserting the conductive contact.

Abstract: To provide a ceramic member having a thermal expansion coefficient close to that of silicon and has satisfactory workability, a probe holder formed by using this ceramic member, and a method of manufacturing the ceramic member. For this purpose, at least mica and silicon dioxide are mixed and an external force oriented in one direction is caused to act on this mixed mixture to sinter the mixture. It is more preferable that, in the mixture, a volume content of the mica is 70 to 90 volume % and a volume content of the silicon dioxide is 10 to 30 volume %.

Abstract: The present invention discloses a program converting unit for generating a machine language instruction from a source program for a processor that manages an N-bit address while processing M-bit data, N being greater than M, and such a processor that runs the converted program. The program converting unit comprising: a parameter holding unit for holding a data width and a pointer width designated by a user; the data width representing the number of bits of data used in the source program while the pointer width representing the number of bits of an address; and a generating unit for generating an instruction to manage the data width when a variable operated by the instruction represents the data, and for generating an instruction to manage the pointer width when a variable operated by the instruction represents the address.

Abstract: A sprayed coating is proposed in which a problem of a condition of oxygen defect which cannot be solved by conventional densification of the sprayed coating is solved, whereby excellent electrical insulation and corrosion resistance can be simultaneously obtained. A sprayed coating formed by plasma spraying inside a semiconductor processing device comprises a metal oxide or a semiconductor oxide, and composition ratio of oxygen with respect to a metal or a semiconductor which composes oxides, that is (oxygen/(metal or semiconductor)) is not less than 80% of a composition ratio in the case of stoichiometric composition.

Abstract: The present invention discloses a program converting unit for generating a machine language instruction from a source program for a processor that manages an N-bit address while processing M-bit data, N being greater than M, and such a processor that runs the converted program. The program converting unit comprising: a parameter holding unit for holding a data width and a pointer width designated by a user; the data width representing the number of bits of data used in the source program while the pointer width representing the number of bits of an address; and a generating unit for generating an instruction to manage the data width when a variable operated by the instruction represents the data, and for generating an instruction to manage the pointer width when a variable operated by the instruction represents the address.

Abstract: The present invention discloses a program converting unit for generating a machine language instruction from a source program for a processor that manages an N-bit address while processing M-bit data, N being greater than M, and such a processor that runs the converted program. The program converting unit comprising: a parameter holding unit for holding a data width and a pointer width designated by a user; the data width representing the number of bits of data used in the source program while the pointer width representing the number of bits of an address; and a generating unit for generating an instruction to manage the data width when a variable operated by the instruction represents the data, and for generating an instruction to manage the pointer width when a variable operated by the instruction represents the address.