Abstract: A method for fixing a steering support capable of improving efficiency when the steering support is fixed to an instrument panel reinforcement body is provided. The method for fixing the steering support according to one aspect of the present disclosure includes processes of: passing an instrument panel reinforcement body through a first through-hole formed in a steering support; and increasing the pressure inside an area of the instrument panel reinforcement body covered with the steering support, plastically deforming the area of the instrument panel reinforcement body from an inside to an outside, and pressing a circumferential surface of the first through-hole of the steering support by an outer circumferential surface of the area of the instrument panel reinforcement body.

Abstract: A device management system for configuring a configuration target device includes: a candidate determiner configured to determine, from among a plurality of installed devices, based on position information of each of the plurality of installed devices and position information of the configuration target device, a candidate device of a reference device to be referred to for configuring the configuration target device; a reference device selector configured to select the reference device from among a plurality of the candidate devices determined by the candidate determiner, based on a device operation on the configuration target device; and a configuration processor configured to perform a process of configuring, for the configuration target device, configuration information configured for the reference device selected by the reference device selector.

Abstract: A method for fixing a steering support capable of improving efficiency when the steering support is fixed to an instrument panel reinforcement body is provided. The method for fixing the steering support according to one aspect of the present disclosure includes processes of: passing an instrument panel reinforcement body through a first through-hole formed in a steering support; and increasing the pressure inside an area of the instrument panel reinforcement body covered with the steering support, plastically deforming the area of the instrument panel reinforcement body from an inside to an outside, and pressing a circumferential surface of the first through-hole of the steering support by an outer circumferential surface of the area of the instrument panel reinforcement body.

Abstract: A mobile electronic device according to an embodiment includes an annunciator that performs notification about an event, and a controller that causes the annunciator to perform the notification about the event when a lifting operation that lifts the mobile electronic device has been detected. A mobile electronic device includes an annunciator performing notification about an event, and a controller causing the annunciator to perform the notification about the event when it is detected that the mobile electronic device has made a transition to a handheld state.

Abstract: In one embodiment, a mobile electronic device includes at least one controller that enables a silent mode setting when a state of being in a vehicle is determined and that enables the silent mode setting when a set time is reached, and the at least one controller suspends the enabling of the silent mode setting based on the set time when the set time is reached after having determined the state of being in a vehicle. When in the state of being in a vehicle, the mobile electronic device does not enable the silent mode setting based on the set time but enables the silent mode setting based on the state of being in a vehicle even when the time of enabling the silent mode setting based on the set time is reached.

Abstract: A high electron mobility transistor (HEMT) made of nitride semiconductor materials, and a method to form the HEMT are disclosed. The HEMT includes a channel layer made of GaN, a barrier layer made of one of AlGaN, InAlN, and InAlGaN on the GaN channel layer, a cap layer made of n-type GaN on the barrier layer, and an insulating layer on the cap layer. The insulating layer has an opening into which the gate is formed. The cap layer has a region in the opening that has a thickness smaller than a thickness of portions of the cap layer that are outside of such region. The outside portions have a thickness that is preferably 5 nm at most.

Abstract: In one embodiment, a mobile electronic device includes at least one controller that enables a silent mode setting when a state of being in a vehicle is determined and that enables the silent mode setting when a set time is reached, and the at least one controller suspends the enabling of the silent mode setting based on the set time when the set time is reached after having determined the state of being in a vehicle. When in the state of being in a vehicle, the mobile electronic device does not enable the silent mode setting based on the set time but enables the silent mode setting based on the state of being in a vehicle even when the time of enabling the silent mode setting based on the set time is reached.

Abstract: A mobile electronic device according to an embodiment includes an annunciator that performs notification about an event, and a controller that causes the annunciator to perform the notification about the event when a lifting operation that lifts the mobile electronic device has been detected. A mobile electronic device includes an annunciator performing notification about an event, and a controller causing the annunciator to perform the notification about the event when it is detected that the mobile electronic device has made a transition to a handheld state.

Abstract: A high electron mobility transistor (HEMT) made of nitride semiconductor materials, and a method to form the HEMT are disclosed. The HEMT includes a channel layer made of GaN, a barrier layer made of one of AlGaN, InAlN, and InAlGaN on the GaN channel layer, a cap layer made of n-type GaN on the barrier layer, and an insulating layer on the cap layer. The insulating layer has an opening into which the gate is formed. The cap layer has a thickness in the portion of the opening smaller than a thickness of portions of the cap layer except for the opening, which is preferably 5 nm at most.

Abstract: A work is subjected to a heat treatment in a heat-treating furnace. First, the work is carried into the heat-treating furnace. The work in the heat-treating furnace is immersed in a heat source solvent. In the heat-treating furnace, a superheated steam atmosphere is formed. The work is exposed in the heat-treating furnace under the superheated steam atmosphere. Then, the work is carried out of the heat-treating furnace.

Abstract: In some embodiments, an electronic device includes an imaging device, a display configured to display an image acquired by the imaging device, a sensor configured to measure information that is used to detect a change in a surrounding environment of the electronic device, and at least one controller configured to determine the surrounding environment continuously based on a measurement result of the sensor to switch an operational setting related to an operation of the imaging device and a setting related to automatic correction of the image acquired by the imaging device, based on a determination result of the surrounding environment, when the change in the surrounding environment is detected. The at least one controller switches the setting related to the automatic correction, when the imaging device has already started capturing a moving image when the change in the surrounding environment is detected, without switching the operational setting.

Abstract: An electronic apparatus that may be enabled by a user's simple operation to a touch panel, a control method of the electronic apparatus, and a control program of the electronic apparatus are provided. An electronic apparatus includes a contact detector for detecting a contact, an acceleration detector for detecting acceleration, a display for displaying an image, and controllers for controlling the display to start displaying the image when the acceleration detector detects predetermined acceleration caused by a first tap and, within a predetermined period therefrom, the contact detector detects a contact caused by a second touch.

Abstract: A method for fabricating a semiconductor device includes forming ohmic electrodes on a source region and a drain region of a nitride semiconductor layer, forming a low-resistance layer between an uppermost surface of the nitride semiconductor layer and the ohmic electrodes by annealing the nitride semiconductor layer, removing the ohmic electrodes from at least one of the source region and the drain region after forming the low-resistance layer, and forming at least one of a source electrode and a drain electrode on the low-resistance layer, the at least one of a source electrode and a drain electrode having an edge, a distance between the edge and a gate electrode is longer than a distance between an edge of the low-resistance layer and the gate electrode.

Abstract: A work is subjected to a heat treatment in a heat-treating furnace. First, the work is carried into the heat-treating furnace. The work in the heat-treating furnace is immersed in a heat source solvent. In the heat-treating furnace, a superheated steam atmosphere is formed. The work is exposed in the heat-treating furnace under the superheated steam atmosphere. Then, the work is carried out of the heat-treating furnace.

Abstract: A method for fabricating a semiconductor device includes forming ohmic electrodes on a source region and a drain region of a nitride semiconductor layer, forming a low-resistance layer between an uppermost surface of the nitride semiconductor layer and the ohmic electrodes by annealing the nitride semiconductor layer, removing the ohmic electrodes from at least one of the source region and the drain region. after forming the low-resistance layer, and forming at least one of a source electrode and a drain electrode on the low-resistance layer, the at least one of a source electrode and a drain electrode having an edge, a distance between the edge and a gate electrode is longer than a distance between an edge of the low-resistance layer and the gate electrode.

Abstract: A method for fabricating a semiconductor device includes forming ohmic electrodes on a source region and a drain region of a nitride semiconductor layer, forming a low-resistance layer between an uppermost surface of the nitride semiconductor layer and the ohmic electrodes by annealing the nitride semiconductor layer, removing the ohmic electrodes from at least one of the source region and the drain region after forming the low-resistance layer, and forming at least one of a source electrode and a drain electrode on the low-resistance layer, the at least one of a source electrode and a drain electrode having an edge, a distance between the edge and a gate electrode is longer than a distance between an edge of the low-resistance layer and the gate electrode.

Abstract: A slide handler 1 mounted on a top end side of a handle lever 5 of which a base end side is attached to a slider 9 of an operated portion has a handler body 2 that has a lever reception portion 7 in which the handler lever 5 is received, a mount attachment 3 that has a lever locking portion 21 relatively fitted and mounted in the lever reception portion 7 in a state that the lever locking portion 21 is locked on the handle lever 5 and that has a hook portion 22 hooked in the lever reception portion 7 in a state that the fitting and mounting is completed, and a pressing member 4 that is detachably mounted on the handler body 2 and presses the hook portion 22 in the lever reception portion 7 in a hooking direction.

Abstract: A device for low-pressure casting wherein the stalk or the guiding tube is filled with inert gas by causing the space formed over the molten metal in the pressurizing room to communicate with the stalk or the guiding tube.

Abstract: A method for fabricating a semiconductor device includes forming ohmic electrodes on a source region and a drain region of a nitride semiconductor layer, forming a low-resistance layer between an uppermost surface of the nitride semiconductor layer and the ohmic electrodes by annealing the nitride semiconductor layer, removing the ohmic electrodes from at least one of the source region and the drain region after forming the low-resistance layer, and forming at least one of a source electrode and a drain electrode on the low-resistance layer, the at least one of a source electrode and a drain electrode having an edge, a distance between the edge and a gate electrode is longer than a distance between an edge of the low-resistance layer and the gate electrode.

Abstract: The object of the present invention is to provide a device for low-pressure casting wherein the stalk or the guiding hole is filled with inert gas by causing the space formed over the molten metal in the pressurizing room to communicate with the stalk or the guiding hole.