Abstract: A method of preserving a harvested organ, a harvested organ tissue or a part thereof for a long time, which comprises perfusing and/or immersing the harvested organ with a solution containing HGF having a temperature of 0 to 6° C., and which method is capable of maintaining harvested organs for transplantation in a high physiological state and preventing ischemia/reperfusion injury of the organs transplanted.

Abstract: This invention has a scroll means for displaying GUI operation members consisting of calendar information on the computer screen, and moving the screen display field to a date position containing information corresponding to the date of the operated GUI operation member upon operation of one of the GUI operation members. The user can very easily see the information compared to a conventional scroll bar display, and can quickly observe corresponding information by only operating the GUI operation member of his or her desired date.

Abstract: This invention has a scroll means for displaying GUI operation members consisting of calendar information on the computer screen, and moving the screen display field to a date position containing information corresponding to the date of the operated GUI operation member upon operation of one of the GUI operation members. The user can very easily see the information compared to a conventional scroll bar display, and can quickly observe corresponding information by only operating the GUI operation member of his or her desired date.

Abstract: Ferritic heat-resisting cast steel, which intends to highten the applicability for use of the exhaust manifold of a vehicle engine without losing oxidation resistance, machinability and structural stability, containing, on a weight basis, 0.05 to 0.5% C, 1.0 to 2.0% Si, less than 0.6% Mn, less than 0.04% P, less than 0.04% S, less than 0.5% Ni, 10 to 20% Cr, 0.1 to 1.0% V, 0.5 to 1.0% Nb, 0.08 to 0.50% Mo, less than 0.01% W and 0.01 to 0.2% Ce, the balance of its composition being iron. Alternatively, it may contain 0.1 to 1.5% Mn and 0.01 to 0.2% S, and may further contain 0.01 to 0.2% Te and/or 0.01 to 0.3% Al. Further, it may contain 0.1 to 5.0% Co and/or 0.1 to 5.0% Ti. The cast steel is annealed at a temperature of 850.degree. C. to 1000.degree. C. for one to five hours.

Abstract: Black sintered bodies of aluminum nitride are produced by adding a sintering aid selected from the group consisting of (a) an oxide mixture of calcium oxide and at least one of tungsten oxide and molybdenum oxide, (b) an oxide containing calcium and at least one of tungsten and molybdenum and (c) a mixture of compounds capable of being converted into said oxide mixture (a) or said oxide (b) by sintering to aluminum nitride so that the resulting composition consists essentially of 0.1 to 20 wt. % in the total amount (calculated as oxides of Ca, W and Mo) of the sintering aid and balance aluminum nitride, molding the composition and sintering the molded composition at relatively low temperature. The black sintered bodies thus obtained are especially useful as materials for insulating substrate, heat sink and packaging for semiconductor device due to their high density, good thermal conductivity and superior light-shielding ability.

Abstract: Sintered bodies of aluminum nitride are produced by adding, as a sintering aid, an oxide mixture consisting essentially of calcium oxide, yttrium oxide and one or more oxides of tungsten oxide and molybdenum oxide or a mixture of compounds (precursors) capable of being converted into said oxide mixture by firing to aluminum nitride as a main component in such proportions that total amounts of the sintering aid is in the range 0.1 to 20% by weight (calculated as oxides of CaO, Y.sub.2 O.sub.3, WO.sub.3 and MoO.sub.3) based on the sum of the weight as the oxide forms of the sintering aid and aluminum nitride, molding the resulting composition and sintering the molded composition. The composition can be sintered at relatively low temperature. The black sintered bodies thus obtained are especially useful as materials for insulating substrate, heat sink, packaging for semiconductor device, etc. due to their high density and good thermal conductivity.