Abstract: A gas generator includes a plurality of gas discharge openings arranged in a circumferential wall portion along a circumferential direction as not overlapping with each other. The plurality of gas discharge openings consist of one group or two or more groups of first gas discharge openings, one group or two or more groups of second discharge openings, and one group or two or more groups of third gas discharge openings. The gas discharge openings included in each of the groups of first to third gas discharge openings are set to be opened at an identical opening pressure. The second gas discharge openings are higher in opening pressure than the first gas discharge openings and lower in opening pressure than the third gas discharge openings. The gas discharge openings included in each group of gas discharge openings are evenly arranged in rotation symmetry at an angle not greater than 120°.

Abstract: A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing the sidewall portion of the film by wet etching which removes the sidewall portion of the film more predominantly than the top/bottom portion according to the different chemical resistance properties.

Abstract: A gas generator includes a housing constructed by combining and joining a plurality of shell members. One of the plurality of shell members includes a cylindrical portion and a flange portion. The cylindrical portion is provided with a plurality of gas discharge openings including gas discharge openings different in opening area from one another. The flange portion is shaped such that a distance from an axial line of the cylindrical portion to an outer edge of the flange portion is non-uniform. When a perpendicular line is drawn to the axial line from a maximum outer geometry position in the outer edge of the flange portion most distant from the axial line, a gas discharge opening arranged closest to the perpendicular line is a gas discharge opening other than a gas discharge opening largest in opening area among the plurality of gas discharge openings.

Abstract: A gas generator includes an igniter, a cup-shaped member, and a fixing member. The cup-shaped member accommodating an enhancer agent bursts or melts at the time of activation. The fixing member fixing a filter does not burst and melt even at the time of activation. Ra and Ha satisfy a condition of Ra/Ha 1.00 where Ra represents an inner diameter of a sidewall portion of the cup-shaped member and Ha represents a distance between a top wall portion of the cup-shaped member and the igniter. The sidewall portion includes a first region surrounded by a partition wall portion of the fixing member and a second region not surrounded by the partition wall portion. The partition wall portion has an end portion arranged closer to a top plate portion than the igniter. A gas generating agent is arranged to face the top wall portion, the second region, and the partition wall portion.

Abstract: A composite material 100 is obtained by laminating and tightly adhering a fabric 60 containing fibers made of spider silk fibroin and a synthetic resin film 50 having a tensile elongation equal to or greater than that of the fabric 60.

Abstract: A steam supplying device includes: a heater that heats fluid; and a heating tube through which the fluid flows, the heating tube being spirally wound around the heater.

Abstract: Methods for forming silicon nitride films are provided. In some embodiments, silicon nitride can be deposited by atomic layer deposition (ALD), such as plasma enhanced ALD. One or more silicon nitride deposition cycle comprise a sequential plasma pretreatment phase in which the substrate is sequentially exposed to a hydrogen plasma and then to a nitrogen plasma in the absence of hydrogen plasma, and a deposition phase in which the substrate is exposed to a silicon precursor. In some embodiments a silicon hydrohalide precursors is used for depositing the silicon nitride. The silicon nitride films may have a high side-wall conformality and in some embodiments the silicon nitride film may be thicker at the bottom of the sidewall than at the top of the sidewall in a trench structure. In gap fill processes, the silicon nitride deposition processes can reduce or eliminate voids and seams.

Abstract: A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing either one of but not both of the top/bottom portion and the sidewall portion of the film by wet etching which removes the one of the top/bottom portion and the sidewall portion of the film more predominantly than the other according to the different chemical resistance properties.

Abstract: Methods for forming silicon nitride films are provided. In some embodiments, silicon nitride can be deposited by atomic layer deposition (ALD), such as plasma enhanced ALD. One or more silicon nitride deposition cycle comprise a sequential plasma pretreatment phase in which the substrate is sequentially exposed to a hydrogen plasma and then to a nitrogen plasma in the absence of hydrogen plasma, and a deposition phase in which the substrate is exposed to a silicon precursor. In some embodiments a silicon hydrohalide precursors is used for depositing the silicon nitride. The silicon nitride films may have a high side-wall conformality and in some embodiments the silicon nitride film may be thicker at the bottom of the sidewall than at the top of the sidewall in a trench structure. In gap fill processes, the silicon nitride deposition processes can reduce or eliminate voids and seams.

Abstract: The toughness of a laminate is improved. A fiber-reinforced resin material contains a fiber material in a resin; and the fiber material contains high-rigidity fibers and fibroin fibers. According to the present invention, a laminate is formed by laminating and bonding a plurality of fiber-reinforced resin layers. A fiber-reinforced resin layer contains the high-rigidity fibers in a resin. A fiber-reinforced resin layer contains the fibroin fibers in a resin.

Abstract: Methods for forming a silicon nitride film by a plasma enhanced atomic layer deposition (PEALD) process are provided. The methods may include: providing a substrate into a reaction chamber; and performing at least one unit deposition cycle of a PEALD process, wherein a unit cycle comprises, contacting the substrate with a vapor phase reactant comprising a silicon precursor; and contacting the substrate with a reactive species generated from a gas mixture comprising a nitrogen precursor and an additional gas. Methods for improving the etch characteristics of a silicon nitride film utilizing a post deposition plasma treatment are also provided.

Abstract: A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing the sidewall portion of the film by wet etching which removes the sidewall portion of the film more predominantly than the top/bottom portion according to the different chemical resistance properties.

Abstract: Provided is a heating cooker that can efficiently apply steam to the entire food and can also cook the food quickly. A heating cooker (1A) includes a toasting grill (16) provided within a cooking chamber (10) and a lower heater (17b) provided at a lower section within the cooking chamber (10). Steam is blown between the toasting grill (16) and the lower heater (17b) from a steam outlet (25) provided in at least one sidewall of the cooking chamber (10).

Abstract: A gas generator includes a plurality of gas discharge openings arranged in a circumferential wall portion along a circumferential direction as not overlapping with each other. The plurality of gas discharge openings consist of one group or two or more groups of first gas discharge openings, one group or two or more groups of second discharge openings, and one group or two or more groups of third gas discharge openings. The gas discharge openings included in each of the groups of first to third gas discharge openings are set to be opened at an identical opening pressure. The second gas discharge openings are higher in opening pressure than the first gas discharge openings and lower in opening pressure than the third gas discharge openings. The gas discharge openings included in each group of gas discharge openings are evenly arranged in rotation symmetry at an angle not greater than 120°.

Abstract: A gas generator includes a housing containing an accommodation space, a gas generating agent, an igniter, and a sealing tape. The housing includes a cylindrical circumferential wall portion including plural gas discharge openings and the plural gas discharge openings are closed by the sealing tape. The plural gas discharge openings include gas discharge openings set to be different from one another in opening pressure so as to be opened stepwise with increase in pressure in the accommodation space as a result of burning of the gas generating agent. A condition of T>1.8 [mm] and SA?60 [mm2] is satisfied where T represents a thickness of a portion of the housing and SA represents a total opening area of the plurality of gas discharge openings. At least one of the plural gas discharge openings is in a shape of an elongated hole.

Abstract: A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing either one of but not both of the top/bottom portion and the sidewall portion of the film by wet etching which removes the one of the top/bottom portion and the sidewall portion of the film more predominantly than the other according to the different chemical resistance properties.

Abstract: A gas generator includes a cylindrical partition wall portion including a plurality of gas passage holes through which a gas generated as a result of burning of a gas generating agent passes. Two sealing tapes in a form of a band are contiguously bonded to the partition wall portion such that a direction of extension thereof matches with a circumferential direction of the partition wall portion and each one of a pair of end portions located in each direction of extension is layered on an adjacent sealing tape. The gas passage hole is closed by a layered bonding region which is a portion where adjacent sealing tapes are layered on each other, and the gas passage hole is closed by a non-layered bonding region which is a portion where adjacent sealing tapes are not layered on each other.

Abstract: A steam generating device (100) includes a heat source (103), a steam generating container (101) made of a metal having the heat source (103) cast therein, and a lid portion (102) covering an upper opening of the steam generating container (101) and forming a steam generating space (P1) together with the steam generating container (101).

Abstract: PCI (Plasmacluster Ion) ions are released for approximately five minutes to a food such as vegetables, at a temperature of around 40° C. in a no-air flowing state and with no steam present.

Abstract: PCI (Plasmacluster Ion) ions are released for approximately five minutes to a food such as vegetables, at a temperature of around 40° C. in a no-air flowing state and with no steam present.