Abstract: The throttle device 1 includes a throttle body 10 having an intake passage 11, a throttle valve 12 arranged to rotate within the intake passage 11 for opening and closing the intake passage 11, and a throttle shaft 13 rotatably arranged with respect to the throttle body 10 which is integrally formed with and concomitantly rotatable with the throttle valve 12. A throttle gear 16 is fixed to the throttle shaft 13 and rotated by the actuator. A spring 20 biases the throttle gear 16 in a predetermined initial opening angle. A full-close stopper 15 is provided in the throttle body 10. The full-close stopper 15 restricts the throttle gear 16, which rotates in the opening and closing directions, from rotating past the fully closed angle position. A stopper member 20f is formed at the spring. An initial-open stopper 18 is provided in the throttle body 10 to restrict the stopper member 20f from rotating past the initial opening angle.

Abstract: A hot rolled steel sheet has a chemical composition including, by mass %, C: 0.060% to 0.120%; Si: 0.10% to 0.70%; Mn: 1.00% to 1.80%; P: 0.10% or less; S: 0.010% or less; Al: 0.01% to 0.10%; N: 0.010% or less; Nb: 0.010% to 0.100%, wherein Nb is contained so that content of solute Nb is 5% or more relative to the total Nb content; the balance being Fe and incidental impurities. The hot rolled steel sheet has a microstructure containing ferrite of not more than 15 ?m in average crystal grain diameter by a volume fraction of not less than 75%, the balance being low-temperature-induced phases. The hot rolled steel sheet can be suitably utilized for manufacturing a cold rolled steel sheet or hot-dip galvanized steel sheet having a tensile strength of 590 MPa or more, excellent in material homogeneity and capable of giving excellent cold rolling property.

Abstract: A sensor apparatus includes a semiconductor sensor device including a first attachment surface, a base part being wire-bonded to the semiconductor sensor device and including a second attachment surface, and a spacer being interposed between the first and second attachment surfaces and having a target attachment surface to which at least one of the first and second attachment surfaces is adhered via a die-bond resin. A total area of the target attachment surface is smaller than a total area of the first attachment surface.

Abstract: A hot rolled steel sheet has a chemical composition including, by mass %, C: 0.060% to 0.120%; Si: 0.10% to 0.70%; Mn: 1.00% to 1.80%; P: 0.10% or less; S: 0.010% or less; Al: 0.01% to 0.10%; N: 0.010% or less; Nb: 0.010% to 0.100%, wherein Nb is contained so that content of solute Nb is 5% or more relative to the total Nb content; the balance being Fe and incidental impurities. The hot rolled steel sheet has a microstructure containing ferrite of not more than 15 ?m in average crystal grain diameter by a volume fraction of not less than 75%, the balance being low-temperature-induced phases. The hot rolled steel sheet can be suitably utilized for manufacturing a cold rolled steel sheet or hot-dip galvanized steel sheet having a tensile strength of 590 MPa or more, excellent in material homogeneity and capable of giving excellent cold rolling property.

Abstract: It is possible to manufacture a large-size, high-accuracy organic EL display using a plastic substrate and an organic EL display using a roll-shaped long plastic substrate. The organic EL display includes an organic EL device A having at least a lower electrode 300, an organic layer including at least a light emitting layer, and an upper electrode 305 and a thin film transistor B on a transparent plastic substrate 100, a source electrode or drain electrode of the thin film transistor B is connected to the lower electrode 300, the plastic substrate 100 has a gas barrier layer 101a, the thin film transistor B is formed on the gas barrier layer 101a, the thin film transistor B includes an active layer 203 containing a non-metallic element which a mixture of oxygen (O) and nitrogen (N) and has a ratio of N to O (N number density/O number density) from 0 to 2, and the organic EL device A is formed at least on the gas barrier layer 101a or one the thin film transistor B.

Abstract: It is possible to manufacture a large-size, high-accuracy organic EL display using a plastic substrate and an organic EL display using a roll-shaped long plastic substrate. The organic EL display includes an organic EL device A having at least a lower electrode 300, an organic layer including at least a light emitting layer, and an upper electrode 305 and a thin film transistor B on a transparent plastic substrate 100, a source electrode or drain electrode of the thin film transistor B is connected to the lower electrode 300, the plastic substrate 100 has a gas barrier layer 101a, the thin film transistor B is formed on the gas barrier layer 101a, the thin film transistor B includes an active layer 203 containing a non-metallic element which a mixture of oxygen (O) and nitrogen (N) and has a ratio of N to O (N number density/O number density) from 0 to 2, and the organic EL device A is formed at least on the gas barrier layer 101a or one the thin film transistor B.

Abstract: It is possible to prevent a decrease in contrast due to external light reflection and to implement a small-size, thin apparatus. The liquid crystal display is configured by interposing alignment films and liquid crystal between a first substrate and a second substrate and adhering the first and second substrates through a gap retaining member and a sealant, wherein the first substrate is a substrate where a light blocking layer, a coloration layer, and a common electrode layer are formed on a plastic film substrate, wherein the second substrate is a substrate where a glass substrate where an active device is formed in advance adhered on a plastic film substrate, and wherein a barrier film is formed on one surface or two surfaces of at least one of the plastic film substrates.

Abstract: In order to provide a semiconductor device having a field effect transistor with a low power consumption and a high speed by use of the combination of Si and an element such as Ge, C or the like of the same group as Si, a strain is applied by a strain applying semiconductor layer 2 to a channel forming layer I having a channel of the field effect transistor formed therein so that the mobility of carriers in the channel is made larger than the mobility of carriers in that material of the channel forming layer which is unstrained.

Abstract: To provide an image display which is capable of preventing fracturing of a substrate which is attributable to a substrate expansion arising from heating or humidification during a manufacture process, impact in use, or distortion when curved display is conducted, a connection failure between a semiconductor chip and a wiring terminal which are mounted on the substrate, and crack occurring in the substrate in the vicinity of an area where the semiconductor chip is mounted, with no need to add members and with no limit of pulling the wiring around. An image display part is formed on one surface of a flexible substrate, and a groove with a depth not reaching a thickness of the substrate is continuously or intermittently defined in another surface of the substrate.

Abstract: The invention aims at providing an engine control experimenting apparatus which enables to easily carry out a confirmation test of an operation in all operation states with regard to the performance of various engine control parts constituting an engine system. In this engine control experimenting apparatus, various engine control parts, which are actually mounted on an engine and are required for engine control, are constructed in a state where electrical transmission and fuel supply are enabled in a manner similar to a case where the engine control parts are mounted on a real engine, and a model-based control is performed on the same conditions as those of the actual engine, on the basis of experimental data of the real engine written in an electronic control unit constituting each of the engine control parts.

Abstract: One of the pixel electrode and the counter electrode includes, on a protective film formed so as to cover the thin film transistor, a planar metal electrode formed so as to cover a rough surface formed in the reflective pixel part; and a planar transparent electrode formed in the reflective pixel part and the transparent pixel part so as to cover the metal electrode. Another one of the pixel electrode and the counter electrode includes, on an insulating film formed so as to cover the one of the pixel electrode and the counter electrode, a plurality of linear electrodes provided in parallel with one another so as to overlap the one of the pixel electrode and the counter electrode. The transparent electrode included in the one of the pixel electrode and the counter electrode is formed of a transparent conductive film which is formed through application.

Abstract: A sensor apparatus includes a semiconductor sensor device including a first attachment surface, a base part being wire-bonded to the semiconductor sensor device and including a second attachment surface, and a spacer being interposed between the first and second attachment surfaces and having a target attachment surface to which at least one of the first and second attachment surfaces is adhered via a die-bond resin. A total area of the target attachment surface is smaller than a total area of the first attachment surface.

Abstract: Various engine control parts, which are actually attached to the engine and are necessary for engine control, are constructed in a state where electrical transmission and fuel supply are enabled in a manner similar to a case where the engine control parts are mounted on an actual engine, and model-based control is performed using numerical formulas on the same conditions as those of the actual engine on the basis of test data of the actual engine written in an electronic control unit constituting one of the engine control parts.

Abstract: A method of forming a semiconductor thin film includes a highly sensitive inspection method for detecting lateral crystals and a crystallizing method. In the crystallizing method, the time-based pulse width of a laser SXL is modulated and an approximate band-like crystal silicon film SPSI is formed in a desired region while scanning the substrate SUB1 bidirectionally in the X and ?X directions. In the inspection method, an inspection beam PRO1 is irradiated to the substrate just after the laser SXL is turned off. A protrusion TOKI will be formed on the silicon film portion where the laser SXL is turned off if the state of the silicon film is that of a lateral crystal SPSI. The inspection beam PRO1 is scattered by the protrusion TOKI and observed by a detector. If the state of the silicon film is granular crystal GGSI or aggregated film AGSI, such a protrusion TOKI is not observed.

Abstract: A thin film semiconductor device is provided which includes an insulating substrate, a Si thin film formed over the insulating substrate, and a transistor with the Si thin film as a channel thereof. The Si thin film includes a polycrystal where a plurality of narrow, rectangular crystal grains are arranged. A surface of the polycrystal is flat at grain boundaries thereof. Also, an average film thickness of the boundaries of crystals of the Si thin film ranges from 90 to 110% of an intra-grain average film thickness.

Abstract: A process for producing an image display device using a thin film semiconductor device is provided which includes forming a polycrystalline semiconductor thin film on a substrate. A substantially belt-shaped crystal is formed which is crystallized so as to grow crystal grains in a direction substantially parallel to a scanning direction of a CW laser beam by scanning the CW laser beam along the substrate, thereby irradiating the CW laser beam on portions of the polycrystalline semiconductor thin film formed onto the substrate.

Abstract: A liquid crystal display device comprises a first electrode disposed in a pixel area including an upper layer of a thin film transistor formed on a main surface of a first insulating substrate, a capacitive insulating layer disposed on the first electrode, and a second electrode disposed on the capacitive insulating layer. The first electrode and the second electrode are formed using a coated transparent electroconductive film and the capacitive insulating layer is formed using a coated insulating film.

Abstract: A TFT device having a pixel portion and a driving circuit portion formed on a glass substrate; wherein at least the active layer (active region) of a transistor constituting said driving circuit comprises polycrystalline silicon including crystals that do not have crystal grain boundaries which cross the direction of current flow.

Abstract: A liquid crystal display device is provided having a transmissive region and a reflective region in a pixel region in which a protective film is formed covering a thin film transistor over a substrate, wherein in the reflective region, an uneven surface is formed on a surface of the protective film, and a capacitor electrode which comprises a transparent conductive film and which is electrically connected to a source electrode of the thin film transistor, a first capacitor insulating film, and a reflective plate which also functions as an opposing electrode and in which the uneven surface formed on the protective film surfaces and appears with the capacitor electrode and the first capacitor insulating film therebetween are formed over the surface of the protective film, a second capacitor insulating film and a pixel electrode are formed covering the reflective region and the transmissive region.

Abstract: Provided is an image display device, including: a first flexible substrate; and a circuit-forming layer constituting an image display area, the circuit-forming layer being made to adhere to one of surfaces of the first flexible substrate, in which, when the first flexible substrate has a thickness of t2, the circuit-forming layer has a thickness of t1 satisfying the following Equation (1): t1?3/40×(t2-23)??(1).