Abstract: Provided is a display device, including: a barrier layer formed of a plurality of material layers being laminated; and a first material layer and a second material layer that sandwich the barrier layer, in which: the first material layer, the plurality of material layers forming the barrier layer, and the second material layer have light refractive indexes that are set so as to sequentially change from the first material layer to the second material layer in one of decreasing order and increasing order; and the plurality of material layers forming the barrier layer include a high stress film and a low stress film which are alternately laminated on each other. Therefore, the display device of the present invention can achieve crack prevention, enhancement in adhesion between the respective layers and enhancement in barrier property, together with reducing a light reflectance of the barrier layer.

Abstract: To provide an image display which is capable of preventing fracturing of a substrate which is attributable to a substrate expansion arising from heating or humidification during a manufacture process, impact in use, or distortion when curved display is conducted, a connection failure between a semiconductor chip and a wiring terminal which are mounted on the substrate, and crack occurring in the substrate in the vicinity of an area where the semiconductor chip is mounted, with no need to add members and with no limit of pulling the wiring around. An image display part is formed on one surface of a flexible substrate, and a groove with a depth not reaching a thickness of the substrate is continuously or intermittently defined in another surface of the substrate.

Abstract: There is provided a method for fabricating an image display device having an active matrix substrate including high-performance transistor circuits operating with high mobility as drive circuits for driving pixel portions which are arranged as a matrix. The portion of a polysilicon film formed in a drive circuit region DAR1 provided on the periphery of the pixel region PAR of the active matrix substrate SUB1 composing the image display device is irradiated and scanned with a pulse modulated laser beam or a pseudo CW laser beam to be reformed into a quasi-strip-like-crystal silicon film having a crystal boundary continuous in the scanning direction so that discrete reformed regions each composed of the quasi-strip-like-crystal silicon film are formed.

Abstract: The object of the present invention is to provide a document processing apparatus capable of extracting written-in notes on a paper document and printing a document only of written-in notes or a document with a part of written-in notes by a writer left behind, and setting a limit on printing on each written-in note. The above object is achieved by apparatus for processing a document by providing a paper document to print with information for identifying an electronic document as the origin of printing, comprising: written-in notes extracting means for extracting a difference (written-in notes) between the paper document and an electronic document and storing written-notes as image information; text conversion means for converting extracted written-in notes into text as character information, and storing the text; and means for generating a print document by laying out image information of written-in notes and written-in information in text form.

Abstract: One of the pixel electrode and the counter electrode includes, on a protective film formed so as to cover the thin film transistor, a planar metal electrode formed so as to cover routh surface formed in the reflective pixel part; and a planar transparent electrode formed in the reflective pixel part and the transparent pixel part so as to cover the metal electrode. Another one of the pixel electrode and the counter electrode includes, on an insulating film formed so as to cover the one of the pixel electrode and the counter electrode, a plurality of linear electrodes provided in parallel with one another so as to overlap the one of the pixel electrode and the counter electrode. The transparent electrode included in the one of the pixel electrode and the counter electrode is formed of a transparent conductive film which is formed through application.

Abstract: In order to provide a semiconductor device having a field effect transistor with a low power consumption and a high speed by use of the combination of Si and an element such as Ge, C or the like of the same group as Si, a strain is applied by a strain applying semiconductor layer 2 to a channel forming layer I having a channel of the field effect transistor formed therein so that the mobility of carriers in the channel is made larger than the mobility of carriers in that material of the channel forming layer which is unstrained.

Abstract: A process for producing an image display device using a thin film semiconductor device is provided which includes forming a polycrystalline semiconductor thin film on a substrate. A substantially belt-shaped crystal is formed which is crystallized so as to grow crystal grains in a direction substantially parallel to a scanning direction of a CW laser beam by scanning the CW laser beam along the substrate, thereby irradiating the CW laser beam on portions of the polycrystalline semiconductor thin film formed onto the substrate.

Abstract: There are provided a disc tray, a traverse unit, and a main chassis unit. The main chassis unit has a main chassis, which has, as observed when the traverse unit is in a stand-by position, a latch portion that engages with a projection portion of a sub rack and a stopper member that restricts the movement of the cam slider. The stopper member has a rotary shaft in the shape of a circular column, a lever portion which the projection portion makes contact, and a lock portion that makes contact with the cam slider and thereby restricts the sliding movement of the cam slider.

Abstract: Provided is a gas detection apparatus comprising an optical waveguide, wherein the optical waveguide comprises: a core formed on a substrate, the core having a refraction index of n1; and a clad to cover an upper part of the core, the clad having a refraction index of n2, wherein at least one side of a cross-sectional surface of the core, perpendicular to a light propagation direction, is formed by a straight line, and wherein the clad is formed from a sensitive resin which makes a magnitude relation of the refraction index of the core and the refraction index of the clad satisfy n1?n2 in an atmosphere where a density of a detection gas is less than a predetermined density, and which makes the magnitude relation satisfy n1>n2 in an atmosphere where the density of the detection gas is not less than the predetermined density.

Abstract: The invention aims at providing an engine control experimenting apparatus which enables to easily carry out a confirmation test of an operation in all operation states with regard to the performance of various engine control parts constituting an engine system. In this engine control experimenting apparatus, various engine control parts, which are actually mounted on an engine and are required for engine control, are constructed in a state where electrical transmission and fuel supply are enabled in a manner similar to a case where the engine control parts are mounted on a real engine, and a model-based control is performed on the same conditions as those of the actual engine, on the basis of experimental data of the real engine written in an electronic control unit constituting each of the engine control parts.

Abstract: The problem to be solved by the present invention is to make it possible to scientifically test the performance of various engine control parts constituting a control system of an engine in various operation states when being mounted on an engine. Various engine control parts, which are actually attached to the engine and are necessary for engine control, are constructed in a state where electrical transmission and fuel supply are enabled in a manner similar to a case where the engine control parts are mounted on an actual engine, and model-based control is performed using numerical formulas on the same conditions as those of the actual engine on the basis of test data of the actual engine written in an electronic control unit constituting one of the engine control parts.

Abstract: In order to provide a semiconductor device having a field effect transistor with a low power consumption and a high speed by use of the combination of Si and an element such as Ge, C or the like of the same group as Si, a strain is applied by a strain applying semiconductor layer 2 to a channel forming layer I having a channel of the field effect transistor formed therein so that the mobility of carriers in the channel is made larger than the mobility of carriers in that material of the channel forming layer which is unstrained.

Abstract: A thin film semiconductor device has a semiconductor thin film with a film thickness of 200 nm or less. The semiconductor thin film is formed over a dielectric substrate with a warping point of 600° C. or lower. The semiconductor thin film has a region in which a first semiconductor thin film region with the defect density of 1×1017 cm?3 or less and a second semiconductor thin film region with the defect density of 1×1017 cm?3 or more are disposed alternately in the form of stripes. The width of the first semiconductor thin film region is larger than the width of the semiconductor thin film region. The grain boundaries, grain size and orientation of crystals over the dielectric substrate are controlled, so that a high quality thin film semiconductor device is obtained.

Abstract: A process for producing an image display device using a thin film semiconductor device is provided which includes forming a polycrystalline semiconductor thin film on a substrate. A substantially belt-shaped crystal is formed which is crystallized so as to grow crystal grains in a direction substantially parallel to a scanning direction of a CW laser beam by scanning the CW laser beam along the substrate, thereby irradiating the CW laser beam on portions of the polycrystalline semiconductor thin film formed onto the substrate.

Abstract: The invention achieves a good engine speed control without increasing a cost and a lowering a reliability of an apparatus in a general purpose engine. In a rotating speed control apparatus of an engine in which an electronic control unit (10) controls an engine speed by operating so as to open and close a throttle valve (40) by an electronic governor apparatus (4) on the basis of an engine speed detected by a crank angle sensor (7) corresponding to an engine speed detecting means and regulating an intake air amount, the opening and closing operation of the throttle valve (40) in the electronic governor apparatus (4) is carried out by a rotating force of a motor rotationally driven only in one direction and an elastic repulsive force of a return spring energizing in a reverse direction.

Abstract: A liquid crystal display device is provided having a transmissive region and a reflective region in a pixel region in which a protective film is formed covering a thin film transistor over a substrate, wherein in the reflective region, an uneven surface is formed on a surface of the protective film, and a capacitor electrode which comprises a transparent conductive film and which is electrically connected to a source electrode of the thin film transistor, a first capacitor insulating film, and a reflective plate which also functions as an opposing electrode and in which the uneven surface formed on the protective film surfaces and appears with the capacitor electrode and the first capacitor insulating film therebetween are formed over the surface of the protective film, a second capacitor insulating film and a pixel electrode are formed covering the reflective region and the transmissive region.

Abstract: A liquid crystal display device comprises a first electrode disposed in a pixel area including an upper layer of a thin film transistor formed on a main surface of a first insulating substrate, a capacitive insulating layer disposed on the first electrode, and a second electrode disposed on the capacitive insulating layer. The first electrode and the second electrode are formed using a coated transparent electroconductive film and the capacitive insulating layer is formed using a coated insulating film.

Abstract: A thin film semiconductor device is provided which includes an insulating substrate, a Si thin film formed over the insulating substrate, and a transistor with the Si thin film as a channel thereof. The Si thin film includes a polycrystal where a plurality of narrow, rectangular crystal grains are arranged. A surface of the polycrystal is flat at grain boundaries thereof. Also, an average film thickness of the boundaries of crystals of the Si thin film ranges from 90 to 100% of an intra-grain average film thickness.

Abstract: A large number of pixels PXL are arranged in a matrix fashion in a display region DSP on an insulating substrate. Disposed around the display region DSP are a drain-side pixel-driving circuit including a drain shift register DSR, a digital-to-analog converter circuit DAC, a drain level shifter DLS, a buffer BF and sampling switches SSW; and a gate-side pixel-driving circuit including a gate shift register GSR and a gate level shifter GLS, and various kinds of circuits. Current mobility of thin film transistors constituting a circuit region SX requiring high-speed operation of these pixel-driving circuits is improved by optimizing a combination of plural layouts, arrangements and configurations for the respective circuits to meet the specifications special for the respective circuits.

Abstract: A thin film semiconductor device is provided which includes an insulating substrate, a Si thin film formed over the insulating substrate, and a transistor with the Si thin film as a channel thereof. The Si thin film includes a polycrystal where a plurality of narrow, rectangular crystal grains are arranged. A surface of the polycrystal is flat at grain boundaries thereof. Also, an average film thickness of the boundaries of crystals of the Si thin film ranges from 90 to 100% of an intra-grain average film thickness.