Abstract: In preparing a commercial transaction document by remote negotiation, the same window of a predetermined format is presented on both a salesperson terminal (6) used by a salesperson and a user terminal (5) used by a customer. As necessary information contents are input on the salesperson terminal (6), the input information contents are also reflected to the user terminal (5). The customer and salesperson can recognize the information contents in real time. Hence, the commercial transaction document is prepared while the customer and salesperson properly recognize items to which both parties have agreed as detailed information contents on the windows corresponding to the commercial transaction document.

Abstract: For a car as merchandise specified by remote negotiation, a commercial transaction document such as an estimate, a contract, or a purchase order which decides an amount related to providing of the merchandise is prepared on the same system and stored in a database in accordance with an operation on a salesperson terminal by a salesperson (provider). A receiver such as a customer can browse (display) the prepared commercial transaction document by using a user terminal. The commercial transaction document to be browsed is provided as document data or a printing product.

Abstract: A copper wiring is desirable for a high-speed logic circuit integrated on a semiconductor substrate, and is patterned through a chemical mechanical polishing, wherein polishing particles are brushed away from the major surface of the resultant semiconductor structure by using aqueous ammonia at 0.0001-0.5 weight percent, catholyte or hydrogen-containing water without damage to the copper wiring, and, thereafter, metallic contaminants such as copper is removed by using washer containing decontaminating agent selected from polycarboxylic acid, ammonium salts thereof and polyaminocarboxylic acid also without damage to the copper wiring.

Abstract: An etching/cleaning apparatus is provided, which makes it possible to effectively remove an unnecessary material or materials existing on a semiconductor wafer without damaging the device area with good controllability. The apparatus comprises (a) a rotating means for holding a semiconductor wafer and for rotating the wafer in a horizontal plane; the wafer having a device area and a surface peripheral area on its surface; the surface peripheral area being located outside the device area; and (b) an edge nozzle for emitting an etching/cleaning liquid toward a surface peripheral area of the wafer. The etching/cleaning liquid emitted from the edge nozzle selectively removes an unnecessary material existing in the surface peripheral area.

Abstract: An etching/cleaning method makes it possible to effectively remove unnecessary materials on a semiconductor wafer, having a surface peripheral area and a surface device area, without damaging the device area. The semiconductor is rotated in a horizontal plane while an etching/cleaning liquid is emitted by an edge nozzle toward the surface peripheral area, thereby selectively etching an unnecessary material in the surface peripheral area. The etching/cleaning liquid emitted from the edge nozzle preferably has an emission direction oriented along a rotation direction of the wafer or outward with respect to a tangent of the wafer formed near a contact point of the liquid with the surface peripheral area of the wafer.

Abstract: A copper wiring is desirable for a high-speed logic circuit integrated on a semiconductor substrate, and is patterned through a chemical mechanical polishing, wherein polishing particles are brushed away from the major surface of the resultant semiconductor structure by using aqueous ammonia at 0.0001-0.5 weight percent, catholyte or hydrogen-containing water without damage to the copper wiring, and, thereafter, metallic contaminants such as copper is removed by using washer containing decontaminating agent selected from polycarboxylic acid, ammonium salts thereof and polyaminocarboxylic acid also without damage to the copper wiring.

Abstract: A copper wiring is desirable for a high-speed logic circuit integrated on a semiconductor substrate, and is patterned through a chemical mechanical polishing, wherein polishing particles are brushed away from the major surface of the resultant semiconductor structure by using hydrogen-containing water without damage to the copper wiring, and, thereafter, metallic contaminants such as copper is removed by using washer containing decontaminating agent selected from polycarboxylic acid, ammonium salts thereof and polyaminocarboxylic acid also without damage to the copper wiring.

Abstract: A first insulating film with a dielectric constant lower than that of a silicon oxide film is formed on a semiconductor substrate. Next, a metal film or a second insulating film, which has degrees of moisture absorption and deformation in an oxygen plasma process and exposure to a resist releasing solution equal to or less than those of a silicon oxide film, is formed on the first insulating film. Then, the metal film or the second insulating film is patterned to a prescribed pattern. An opening is formed in the first insulating film using the metal film or the second insulating film as a mask.

Abstract: A first insulating film with a dielectric constant lower than that of a silicon oxide film is formed on a semiconductor substrate. Next, a second insulating film, which has degrees of moisture absorption and deformation in an oxygen plasma process and exposure to a resist releasing solution equal to or less than those of a silicon oxide film, is formed on the first insulating film. Then, a third insulating film, which has degrees of moisture absorption and deformation in an oxygen plasma process and exposure to a resist releasing solution equal to or less than those of a silicon oxide film are formed on the second insulating film. Thereafter, the third insulating film is patterned to a prescribed pattern. An opening is formed in the first and second insulating films using the third insulating film as a mask.

Abstract: A semiconductor device having a non-doped polysilicon and a doped polysilicon containing group III element is selectively wet-etched the non-doped polysilicon by using an etching liquid. The etching liquid is an electrolytic liquid obtained on a side of a cathode electrode and the electrolytic liquid is formed by electrolyzing a liquid containing pure water added with ammonium ion.

Abstract: A sampling method for collecting metallic contaminants from a surface of a wafer having an oxide film thereon. A sampling vessel comprises a bottom having a concave inner surface and a convex outer surface, a cylindrical wall extending from the edge of the bottom, and a step section having a plane intercepting an arc plane of the cylindrical wall for adapting the orientation flat of the wafer. Sampling liquid containing 0.1 to 10% HF and hydrogen peroxide dissolves the oxide film and collects the metallic contaminants by swinging the sampling vessel on the convex outer surface of the bottom.

Abstract: In a wet processing apparatus including a first processing chamber for carrying out a first process with first chemicals and a second processing chamber for carrying out a second process with second chemicals, a separation cell is provided between the first and second processing chambers and receives pure water therein. Also, a movable partitioning plate is provided between the first and second processing chambers, to partition the first processing chamber from the second processing chamber. A lower end of the movable partitioning plate is immersed below a surface of pure water of the separation cell.