Abstract: A light emitting diode includes a first type semiconductor layer, an active layer, a second type semiconductor layer, a patterned electrode layer, a flat layer and a reflective layer. The active layer is disposed on the first type semiconductor layer. The second type semiconductor layer is disposed on the active layer. The second type semiconductor layer includes a first surface and a second surface having a first arithmetic mean roughness. The patterned electrode layer is disposed on the second surface of the second type semiconductor layer. The planarization layer is disposed on the second type semiconductor layer. The planarization layer includes a third surface and a fourth surface. The third surface is in contact with the second surface of the second type semiconductor layer. The fourth surface has a second arithmetic mean roughness that is less than the first arithmetic mean roughness.

Abstract: A light-emitting diode structure includes a first type semiconductor layer, a light-emitting layer, a second type semiconductor layer, a reflective layer, and an ohmic contact layer. The light-emitting layer is disposed under the first type semiconductor layer. The second type semiconductor layer is disposed under the light-emitting layer, wherein the second type semiconductor layer includes a plurality of recesses which are recessed from a lower surface of the second type semiconductor layer toward the light-emitting layer. The reflective layer is disposed in the recesses. The ohmic contact layer is disposed under the lower surface of the second type semiconductor layer and surrounds the recesses. The light-emitting diode structure can increase the luminous efficiency greatly.

Abstract: A light emitting diode structure includes a first type semiconductor layer, a second type semiconductor layer, an active layer disposed therebetween, and a reflective stacked layer. The reflective stacked layer includes a first reflective layer and a second reflective layer. The first reflective layer is disposed at a side of the second type semiconductor layer opposing the active layer. The second reflective layer is disposed at a side of the first reflective layer opposing the second type semiconductor layer, and extends along a side surface of the first reflective layer to a surface of the second type semiconductor layer. A vertical projection area of the second reflective layer on the second-type semiconductor layer is greater than that of the first reflective layer thereon. The second reflective layer has a better resistance to migration than the first reflective layer.

Abstract: A light emitting diode includes a base layer, an electric contact layer, a semiconductor stack, and an insulation layer. The base layer has a maximum of a first width. The electric contact layer has a maximum of a second width and is disposed on the base layer. The semiconductor stack disposed on the electric contact layer has a maximum of a third width, and includes a first type semiconductor layer, a light emitting layer, and a second type semiconductor layer stacked in sequence, wherein a width of the first type semiconductor layer is smaller than the maximum of the third width. The insulation layer covers the sidewalls of the base layer, the electric contact layer, and the semiconductor stack. The maximum of the second width is greater than the maximum of the third width and the maximum of the second width is less than the maximum of the first width.

Abstract: A micro light emitting diode includes a die-bonding substrate, an adhesive layer, an undoped III-V group semiconductor layer, an N-type III-V group semiconductor layer, a light emitting layer, and a P-type III-V group semiconductor layer. The adhesive layer is disposed on the die-bonding substrate. The undoped III-V group semiconductor layer is disposed on the adhesive layer, and the adhesive layer is between the die-bonding substrate and the undoped III-V group semiconductor layer. The N-type III-V group semiconductor layer is disposed on the undoped III-V group semiconductor layer. The light emitting layer is disposed on the N-type III-V group semiconductor layer. The P-type III-V group semiconductor layer is disposed on the N-type III-V group semiconductor layer, and the light emitting layer is between the N-type III-V group semiconductor layer and the P-type III-V group semiconductor layer.

Abstract: A light-emitting diode (LED) chip includes a substrate, a conductive layer, a first insulator layer, a light-emitting component, and an ESD protection component. The conductive layer is disposed on the substrate. The first insulator layer is disposed on the conductive layer and has a first opening and a second opening. The light-emitting component is disposed on the first insulator layer and includes a first semiconductor layer, a first quantum well layer, and a second semiconductor layer. The ESD protection component is disposed on the first insulator layer and separated from the light-emitting component. The ESD protection component includes a third semiconductor layer, a second quantum well layer, and a fourth semiconductor layer. The second quantum well layer is disposed between the third and fourth semiconductor layers. The first and fourth semiconductor layers are electrically isolated from each other before packaging the LED chip.

Abstract: The present invention provides a light-emitting diode (LED) chip. The LED chip includes a LED structure and an electrostatic discharge (ESD) protection structure. The ESD protection structure is in a corner of the LED chip and connects with the LED structure in anti-parallel. An interface between the LED structure and the ESD protection structure is a straight line from a top view.

Abstract: A pixel structure includes a light emitting diode chip and a light blocking structure. The light emitting diode chip includes a P-type semiconductor layer, an active layer, an N-type semiconductor layer, a first electrode, and K second electrodes. The active layer is located on the P-type semiconductor layer. The N-type semiconductor layer is located on the active layer. The N-type semiconductor layer has a first top surface that is distant from the active layer. The first electrode is electrically connected to the P-type semiconductor layer. The light blocking structure is located in the light emitting diode chip and defines K sub-pixel regions. The active layer and the N-type semiconductor layer are divided into K sub-portions respectively corresponding to the K sub-pixel regions by the light blocking structure. The K sub-pixel regions share the P-type semiconductor layer.

Abstract: A micro light emitting diode includes a die-bonding substrate, an adhesive layer, an undoped III-V group semiconductor layer, an N-type III-V group semiconductor layer, a light emitting layer, and a P-type III-V group semiconductor layer. The adhesive layer is disposed on the die-bonding substrate. The undoped III-V group semiconductor layer is disposed on the adhesive layer, and the adhesive layer is between the die-bonding substrate and the undoped III-V group semiconductor layer. The N-type III-V group semiconductor layer is disposed on the undoped III-V group semiconductor layer. The light emitting layer is disposed on the N-type III-V group semiconductor layer. The P-type III-V group semiconductor layer is disposed on the N-type III-V group semiconductor layer, and the light emitting layer is between the N-type III-V group semiconductor layer and the P-type III-V group semiconductor layer.

Abstract: A side-view light emitting laser element includes a support substrate, a first electrode layer, a second electrode layer, and a light emitting multilayer unit sandwiched between the first electrode layer and the second electrode layer. The first electrode layer is disposed on the support substrate. The second electrode layer is disposed on the first electrode layer. The light emitting multilayer unit includes a first semiconductor layer, a second semiconductor layer and an activating layer sandwiched between the first semiconductor layer and the second semiconductor layer. A first refractive index of the first electrode layer and a second refractive index of the second electrode layer are between 1 and 0, respectively.

Abstract: A light-emitting diode (LED) chip includes a substrate, a conductive layer, a first insulator layer, a light-emitting component, and an ESD protection component. The conductive layer is disposed on the substrate. The first insulator layer is disposed on the conductive layer and has a first opening and a second opening. The light-emitting component is disposed on the first insulator layer and includes a first semiconductor layer, a first quantum well layer, and a second semiconductor layer. The ESD protection component is disposed on the first insulator layer and separated from the light-emitting component. The ESD protection component includes a third semiconductor layer, a second quantum well layer, and a fourth semiconductor layer. The second quantum well layer is disposed between the third and fourth semiconductor layers. The first and fourth semiconductor layers are electrically isolated from each other before packaging the LED chip.

Abstract: A light-emitting diode (LED) chip includes a substrate, a light-emitting component, an electrical static discharge (ESD) protection component, and a conductive layer. The light-emitting component is disposed on the substrate and includes a first semiconductor layer, a first quantum well layer, and a second semiconductor layer, in which the first quantum well layer is disposed between the first and second semiconductor layers. The ESD protection component is disposed on the substrate and includes a third semiconductor layer, a second quantum well layer, and a fourth semiconductor layer, in which the second quantum well layer is disposed between the third and the fourth semiconductor layers. The first and the fourth semiconductor layers are electrically connected with each other through the conductive layer, and the second and the third semiconductor layers are electrically isolated from each other before packaging the LED chip.

Abstract: A semiconductor light-emitting structure and a semiconductor package structure thereof are provided. The semiconductor light-emitting structure includes a first-type semiconductor layer, an active layer, a second-type semiconductor layer, a metal layer and a distributed Bragg reflector. The active layer is disposed on the first-type semiconductor layer. The second-type semiconductor layer is disposed on the active layer. The metal layer is disposed on the second-type semiconductor layer as a first reflective structure, wherein the metal layer has an opening portion. The distributed Bragg reflector is disposed on the metal layer and interposed into the opening portion as a second reflective structure. The first reflective structure and the second reflective structure form a reflective surface on the second-type semiconductor layer.

Abstract: A light-emitting diode (LED) chip includes a substrate, a light-emitting component, an electrical static discharge (ESD) protection component, and a conductive layer. The light-emitting component is disposed on the substrate and includes a first semiconductor layer, a first quantum well layer, and a second semiconductor layer, in which the first quantum well layer is disposed between the first and second semiconductor layers. The ESD protection component is disposed on the substrate and includes a third semiconductor layer, a second quantum well layer, and a fourth semiconductor layer, in which the second quantum well layer is disposed between the third and the fourth semiconductor layers. The first and the fourth semiconductor layers are electrically connected with each other through the conductive layer, and the second and the third semiconductor layers are electrically isolated from each other before packaging the LED chip.

Abstract: A flip-chip light emitting diode chip includes a first semiconductor structure, which includes a P-type semiconductor layer, a N-type semiconductor layer, openings, a reflective layer, a barrier layer, a passivation layer, and an electrical contact layer. The openings penetrate the P-type semiconductor layer and a part of the N-type semiconductor layer so as to partially expose the N-type semiconductor layer. The reflective layer is disposed on the P-type semiconductor layer. The barrier layer is disposed on the reflective layer, and the area of the barrier layer is smaller than that of the reflective layer therefore the reflective layer is exposed from the barrier layer. The passivation layer is disposed on the barrier layer and partially fills in the openings. The electrical contact layer disposed on the passivation layer partially penetrates through the passivation layer to contact the exposed part of the N-type semiconductor layer.

Abstract: A side-view light emitting laser element includes a support substrate, a first electrode layer, a second electrode layer, and a light emitting multilayer unit sandwiched between the first electrode layer and the second electrode layer. The first electrode layer is disposed on the support substrate. The second electrode layer is disposed on the first electrode layer. The light emitting multilayer unit includes a first semiconductor layer, a second semiconductor layer and an activating layer sandwiched between the first semiconductor layer and the second semiconductor layer. A first refractive index of the first electrode layer and a second refractive index of the second electrode layer are between 1 and 0, respectively.

Abstract: A light-emitting device is provided, including: a substrate; a reflective layer disposed on the substrate; a patterned contact layer disposed on the reflective layer; a light-emitting unit disposed on the patterned contact layer; a first electrode disposed on a top surface of the light-emitting unit; and a second electrode disposed on a bottom surface of the light-emitting unit; wherein a projection of the first electrode on the substrate and a projection of the patterned contact layer on the substrate are complementary to each other.

Abstract: The disclosure provides a light-emitting diode which includes a first semiconductor layer, a light-emitting layer, a second semiconductor layer, a reflective layer, a current blocking layer and a current spreading layer. The light-emitting layer is positioned on the first semiconductor layer, and the second semiconductor layer is positioned on the light-emitting layer. The reflective layer is positioned on a part of the second semiconductor layer, so as to expose another part of the second semiconductor layer. The current blocking layer covers the reflective layer, and the current spreading layer covers the exposed second semiconductor layer and current blocking layer.

Abstract: A light-emitting element is provided, including: a light-emitting unit sequentially comprising a first-type semiconductor layer, a light-emitting layer and a second-type semiconductor layer, wherein the light-emitting unit has an opening through the second-type semiconductor layer and the light-emitting layer to expose a portion of the first-type semiconductor layer; a current-conduction layer disposed on the second-type semiconductor layer; a first electrode disposed on the current-conduction layer and exposing a portion thereof; a distributed Bragg reflector disposed on the first electrode and covering the exposed portion of the current-conduction layer; and a second electrode disposed on the distributed Bragg reflector and filling the opening to electrically connect to the first-type semiconductor layer.

Abstract: The present invention provides a light-emitting diode (LED) chip. The LED chip includes a LED structure and an electrostatic discharge (ESD) protection structure. The ESD protection structure is in a corner of the LED chip and connects with the LED structure in anti-parallel. An interface between the LED structure and the ESD protection structure is a straight line from a top view.