Abstract: An optical waveguide may include a silicon portion and a silicon nitride portion positioned over the silicon portion. The silicon portion may include a taper that decreases a width of the silicon portion. The optical waveguide may include a transition between a loaded single mode or multimode waveguide to a single mode waveguide. The silicon nitride portion may confine optical signals traveling through the optical waveguide in the silicon portion.

Abstract: An example system includes a grating coupled laser, a laser optical interposer (LOI), an optical isolator, and a light redirector. The grating coupled laser includes a laser cavity and a transmit grating optically coupled to the laser cavity. The transmit grating is configured to diffract light emitted by the laser cavity out of the grating coupled laser. The LOI includes an LOI waveguide with an input end and an output end. The optical isolator is positioned between the surface coupled edge emitting laser and the LOI. The light redirector is positioned to redirect the light, after the light passes through the optical isolator, into the LOI waveguide of the LOI.

Abstract: A system includes a grating coupled laser and a photonic integrated circuit (PIC). The grating coupled laser includes a first waveguide and a transmit grating coupler optically coupled to the first waveguide. The PIC includes a second waveguide and a receive grating coupler optically coupled to the second waveguide. The receive grating coupler is in optical alignment with the transmit grating coupler. The receive grating coupler includes a first grating and a second grating spaced apart from and above the first grating within the PIC.

Abstract: An example system includes a grating coupled laser, a laser optical interposer (LOI), an optical isolator, and a light redirector. The grating coupled laser includes a laser cavity and a transmit grating optically coupled to the laser cavity. The transmit grating is configured to diffract light emitted by the laser cavity out of the grating coupled laser. The LOI includes an LOI waveguide with an input end and an output end. The optical isolator is positioned between the surface coupled edge emitting laser and the LOI. The light redirector is positioned to redirect the light, after the light passes through the optical isolator, into the LOI waveguide of the LOI.

Abstract: Various embodiments relate to polarization splitters. A polarization splitter may include a silicon nitride (SiN) waveguide core configured to receive an input light signal having a first polarization mode and a second polarization mode. The polarization splitter may further include a silicon (Si) slot waveguide core disposed proximate the SiN waveguide core. The Si slot waveguide core may include a tapered portion at a first end configured to couple the first polarization mode to the Si slot waveguide.

Abstract: In one example embodiment, an integrated silicon photonic wavelength division demultiplexer includes an input waveguide, an input port, a plurality of output waveguides, a plurality of output ports, a first auxiliary waveguide, and a plurality of auxiliary waveguides. The input waveguide may be formed in a first layer and having a first effective index n1. The input port may be optically coupled to the input waveguide. The output waveguides may be formed in the first layer and may have the first effective index n1. Each of the output ports may be optically coupled to a corresponding output waveguide. The first auxiliary waveguide may be formed in a second layer below the input waveguide in the first layer. The first auxiliary waveguide may have a second effective index n2 and may have two tapered ends, and n2 may be higher than n1.

Abstract: A PCR can include: a substrate; a primary through waveguide formed in the substrate having a custom tapered top region over a bottom region; a secondary cross waveguide formed in the substrate having a custom body shape; and a gap between the primary through waveguide and secondary cross waveguide. The custom tapered top region forces the TM mode to convert to a TE mode and cross into the secondary cross waveguide.

Abstract: Various embodiments relate to polarization splitters. A polarization splitter may include a silicon nitride (SiN) waveguide core configured to receive an input light signal having a first polarization mode and a second polarization mode. The polarization splitter may further include a silicon (Si) slot waveguide core disposed proximate the SiN waveguide core. The Si slot waveguide core may include a tapered portion at a first end configured to couple the first polarization mode to the Si slot waveguide.

Abstract: An example system includes a grating coupled laser, a laser optical interposer (LOI), an optical isolator, and a light redirector. The grating coupled laser includes a laser cavity and a transmit grating optically coupled to the laser cavity. The transmit grating is configured to diffract light emitted by the laser cavity out of the grating coupled laser. The LOI includes an LOI waveguide with an input end and an output end. The optical isolator is positioned between the surface coupled edge emitting laser and the LOI. The light redirector is positioned to redirect the light, after the light passes through the optical isolator, into the LOI waveguide of the LOI.

Abstract: A dual-ring-modulated laser includes a gain medium having a reflective end coupled to a gain-medium reflector and an output end coupled to a reflector circuit to form a lasing cavity. This reflector circuit comprises: a first ring modulator; a second ring modulator; and a shared waveguide that optically couples the first and second ring modulators. The first and second ring modulators have resonance peaks, which are tuned to have an alignment separation from each other. During operation, the first and second ring modulators are driven in opposing directions based on the same electrical input signal, so the resonance peaks of the first and second ring modulators shift wavelengths in the opposing directions during modulation. The modulation shift for each of the resonance peaks equals the alignment separation, so the resonance peaks interchange positions during modulation to cancel out reflectivity changes in the lasing cavity caused by the modulation.

Abstract: An optical modulator is described. This optical modulator may be implemented using silicon-on-insulator (SOI) technology. In particular, a semiconductor layer in an SOI platform may include a photonic crystal having a group velocity of light that is less than that of the semiconductor layer. Moreover, an optical modulator (such as a Mach-Zehnder interferometer) may be implemented in the photonic crystal with a vertical junction in the semiconductor layer. During operation of the optical modulator, an input optical signal may be split into two different optical signals that feed two optical waveguides, and then subsequently combined into an output optical signal. Furthermore, during operation, time-varying bias voltages may be applied across the vertical junction in the optical modulator using contacts defined along a lateral direction of the optical modulator.

Abstract: A hybrid optical source comprises an optical gain chip containing an optical gain material that provides an optical signal, and an optical reflector chip including an optical reflector. It also includes a semiconductor-on-insulator (SOI) chip, which comprises a semiconductor layer having a planarized surface facing the semiconductor reflector. The semiconductor layer includes: an optical coupler to redirect the optical signal to and from the planarized surface; and an optical waveguide to convey the optical signal from the optical coupler. While assembling these chips, a height of the optical gain material is referenced against the planarized surface of the semiconductor layer, a height of the optical reflector is referenced against the planarized surface of the semiconductor layer, and the optical reflector is aligned with the optical coupler, so that the optical signal emanating from the optical gain material is reflected by the optical reflector and into the optical coupler.

Abstract: A hybrid optical source comprises an optical gain chip containing an optical gain material that provides an optical signal, and an optical reflector chip including an optical reflector. It also includes a semiconductor-on-insulator (SOI) chip, which comprises a semiconductor layer having a planarized surface facing the semiconductor reflector. The semiconductor layer includes: an optical coupler to redirect the optical signal to and from the planarized surface; and an optical waveguide to convey the optical signal from the optical coupler. While assembling these chips, a height of the optical gain material is referenced against the planarized surface of the semiconductor layer, a height of the optical reflector is referenced against the planarized surface of the semiconductor layer, and the optical reflector is aligned with the optical coupler, so that the optical signal emanating from the optical gain material is reflected by the optical reflector and into the optical coupler.

Abstract: A dual-ring-modulated laser includes a gain medium having a reflective end coupled to an associated gain-medium reflector and an output end, which is coupled to a reflector circuit through an input waveguide to form a lasing cavity. The reflector circuit comprises: a first ring modulator; a second ring modulator; and a shared waveguide that optically couples the first and second ring modulators together. The first and second ring modulators have resonance peaks that are tuned to be offset in alignment from each other to provide an effective reflectance having a flat-top response, which is aligned with an associated lasing cavity mode. The first and second ring modulators are driven in tandem based on the same electrical input signal, whereby the resonance peaks of the first and second ring modulators shift wavelengths in the same direction during modulation, and an effective reflectance stays within the flat-top wavelength range.

Abstract: An optical modulator is described. This optical modulator may be implemented using silicon-on-insulator (SOI) technology. In particular, a semiconductor layer in an SOI platform may include a photonic crystal having a group velocity of light that is less than that of the semiconductor layer. Moreover, an optical modulator (such as a Mach-Zehnder interferometer) may be implemented in the photonic crystal with a vertical junction in the semiconductor layer. During operation of the optical modulator, an input optical signal may be split into two different optical signals that feed two optical waveguides, and then subsequently combined into an output optical signal. Furthermore, during operation, time-varying bias voltages may be applied across the vertical junction in the optical modulator using contacts defined along a lateral direction of the optical modulator.

Abstract: An optical modulator is described. This optical modulator may be implemented using silicon-on-insulator (SOI) technology. In particular, a semiconductor layer in an SOI platform may include a photonic crystal having a group velocity of light that is less than that of the semiconductor layer. Moreover, an optical modulator (such as a Mach-Zehnder interferometer) may be implemented in the photonic crystal with a vertical junction in the semiconductor layer. During operation of the optical modulator, an input optical signal may be split into two different optical signals that feed two optical waveguides, and then subsequently combined into an output optical signal. Furthermore, during operation, time-varying bias voltages may be applied across the vertical junction in the optical modulator using contacts defined along a lateral direction of the optical modulator.

Abstract: An optical modulator is described. This optical modulator may be implemented using silicon-on-insulator (SOI) technology. In particular, the optical modulator may include a carrier-accumulation-type micro-disk resonator fabricated using optical waveguides having a composite structure. Moreover, the composite structure may embed a metal-oxide semiconductor capacitor in the disk resonator. For example, the composite structure may include polysilicon disposed on an oxide layer, which is disposed on a silicon layer in an SOI platform. The optical modulator may have high modulation efficiency and high-speed operation. In addition, the optical modulator may have a compact footprint with low power consumption.

Abstract: A dual-ring-modulated laser includes a gain medium having a reflective end coupled to a gain-medium reflector and an output end coupled to a reflector circuit to form a lasing cavity. This reflector circuit comprises: a first ring modulator; a second ring modulator; and a shared waveguide that optically couples the first and second ring modulators. The first and second ring modulators have resonance peaks, which are tuned to have an alignment separation from each other. During operation, the first and second ring modulators are driven in opposing directions based on the same electrical input signal, so the resonance peaks of the first and second ring modulators shift wavelengths in the opposing directions during modulation. The modulation shift for each of the resonance peaks equals the alignment separation, so the resonance peaks interchange positions during modulation to cancel out reflectivity changes in the lasing cavity caused by the modulation.

Abstract: An integrated circuit includes an optical reflector with one or two bus optical waveguides and a one-dimensional, photonic crystal nanobeam cavity to provide single-mode reflection with a narrow bandwidth. In particular, the nanobeam cavity may be implemented on a nanobeam-cavity optical waveguide (such as a channel or ridge optical waveguide), which is optically coupled to the one or two bus optical waveguides. The nanobeam-cavity optical waveguide may include notches along a symmetry axis of the nanobeam-cavity optical waveguide that are partially etched from edges of the nanobeam-cavity optical waveguide toward a center of the nanobeam-cavity optical waveguide. Furthermore, a fill factor of the notches may vary as a function of location along the symmetry axis, while a pitch of the notches is unchanged, to define the nanobeam cavity.

Abstract: An optical modulator is described. This optical modulator may be implemented using silicon-on-insulator (SOI) technology. In particular, the optical modulator may include a carrier-accumulation-type micro-disk resonator fabricated using optical waveguides having a composite structure. Moreover, the composite structure may embed a metal-oxide semiconductor capacitor in the disk resonator. For example, the composite structure may include polysilicon disposed on an oxide layer, which is disposed on a silicon layer in an SOI platform. The optical modulator may have high modulation efficiency and high-speed operation. In addition, the optical modulator may have a compact footprint with low power consumption.