Patents by Inventor Sho Kumakura

Sho Kumakura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11145518
    Abstract: A selectivity can be improved in a desirable manner when etching a processing target object containing silicon carbide. An etching method of processing the processing target object, having a first region containing silicon carbide and a second region containing silicon nitride and in contact with the first region, includes etching the first region to remove the first region atomic layer by atomic layer by repeating a sequence comprising: generating plasma from a first gas containing nitrogen to form a mixed layer containing ions contained in the plasma generated from the first gas in an atomic layer of an exposed surface of the first region; and generating plasma from a second gas containing fluorine to remove the mixed layer by radicals contained in the plasma generated from the second gas.
    Type: Grant
    Filed: October 23, 2019
    Date of Patent: October 12, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Sho Kumakura, Masahiro Tabata
  • Patent number: 11139169
    Abstract: An etching method and an etching apparatus improve the shape of a mask deformed by an etching process. The etching method for etching a film with plasma includes a step of providing a substrate, an etching step, and a correction step. In the step of providing a substrate, a substrate having a mask formed on a first film is provided. In the etching step, the first film is etched with plasma generated from a first gas containing Xe, Kr, or Rn so that an aspect ratio of a hole or a groove formed in the first film is 30 or more. In the correction step, the shape of the mask is corrected with plasma generated from a second gas.
    Type: Grant
    Filed: June 15, 2020
    Date of Patent: October 5, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Sho Kumakura, Satoshi Ohuchida, Maju Tomura
  • Patent number: 11114304
    Abstract: A substrate processing method includes providing a processing target substrate having a pattern, forming a film on the substrate, forming a reaction layer on a surface layer of the substrate by plasma, and removing the reaction layer by applying energy to the substrate.
    Type: Grant
    Filed: September 9, 2019
    Date of Patent: September 7, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Takayuki Katsunuma, Toru Hisamatsu, Shinya Ishikawa, Yoshihide Kihara, Masanobu Honda, Maju Tomura, Sho Kumakura
  • Patent number: 11094550
    Abstract: An etching method include: etching a silicon-containing film or a metal-containing film formed on a substrate; and heating the substrate by temporarily irradiating the substrate with electromagnetic waves during the etching.
    Type: Grant
    Filed: January 16, 2020
    Date of Patent: August 17, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Sho Kumakura, Ryutaro Suda
  • Publication number: 20210233778
    Abstract: An etching method includes forming a film on a surface of a substrate having a region to be etched and a mask. The mask is provided on the region and includes an opening that partially exposes the region. The film is made of the same material as that of the region. The etching method further includes etching the region.
    Type: Application
    Filed: January 28, 2021
    Publication date: July 29, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Maju TOMURA, Tomohiko NIIZEKI, Takayuki KATSUNUMA, Hironari SASAGAWA, Yuta NAKANE, Shinya ISHIKAWA, Kenta ONO, Sho KUMAKURA, Yusuke TAKINO, Masanobu HONDA
  • Publication number: 20210159084
    Abstract: A technique improves pattern features formed by etching and the uniformity of the features across the surface of a substrate. An etching method includes steps a), b), c), d), and e). Step a) includes placing, on a support, a substrate including a target film. Step b) includes partially etching the target film and forming a recess. Step c) includes setting the temperature of the support at a first temperature, and forming, on a sidewall of the recess, a first film having a first film thickness distribution. Step d) includes partially further etching the target film having the first film formed on the target film. Step e) includes setting the temperature of the support at a second temperature different from the first temperature, and forming, on the sidewall of the recess, a second film having a second film thickness distribution different from the first film thickness distribution.
    Type: Application
    Filed: November 20, 2020
    Publication date: May 27, 2021
    Applicant: Tokyo Electron Limited
    Inventors: Maju Tomura, Sho Kumakura, Hironari Sasagawa, Yoshihide Kihara
  • Patent number: 10916420
    Abstract: A substrate processing method includes: providing a substrate in a processing container; selectively forming a first film on a surface of a substrate by plasma enhanced vapor deposition (PECVD); and forming a second film by atomic layer deposition (ALD) in a region of the substrate where the first film does not exist. The second film is formed by repeatedly performing a sequence including: forming a precursor layer on the surface of the substrate; purging an interior of the processing container after forming of the precursor; converting the precursor layer into the second film; and purging a space in the processing container after the converting. A plasma processing apparatus performing the method is also provided.
    Type: Grant
    Filed: August 29, 2019
    Date of Patent: February 9, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Masahiro Tabata, Toru Hisamatsu, Maju Tomura, Sho Kumakura, Hironari Sasagawa
  • Publication number: 20200402800
    Abstract: An etching method and an etching apparatus improve the shape of a mask deformed by an etching process. The etching method for etching a film with plasma includes a step of providing a substrate, an etching step, and a correction step. In the step of providing a substrate, a substrate having a mask formed on a first film is provided. In the etching step, the first film is etched with plasma generated from a first gas containing Xe, Kr, or Rn so that an aspect ratio of a hole or a groove formed in the first film is 30 or more. In the correction step, the shape of the mask is corrected with plasma generated from a second gas.
    Type: Application
    Filed: June 15, 2020
    Publication date: December 24, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Sho Kumakura, Satoshi Ohuchida, Maju Tomura
  • Publication number: 20200381265
    Abstract: A method of processing a substrate is provided. The substrate includes an etching target region and a patterned region. The patterned region is provided on the etching target region. In the method, an organic film is formed on a surface of the substrate. Subsequently, the etching target region is etched by plasma generated from a processing gas. The organic film is formed in a state that the substrate is placed in a processing space within a chamber. When the organic film is formed, a first gas containing a first organic compound is supplied toward the substrate, and then, a second gas containing a second organic compound is supplied toward the substrate. An organic compound constituting the organic film is generated by polymerization of the first organic compound and the second organic compound.
    Type: Application
    Filed: August 21, 2020
    Publication date: December 3, 2020
    Inventors: Masahiro Tabata, Toru Hisamatsu, Sho Kumakura, Ryuichi Asako, Shinya Ishikawa, Masanobu Honda
  • Patent number: 10777425
    Abstract: A method of processing a substrate is provided. The substrate includes an etching target region and a patterned region. The patterned region is provided on the etching target region. In the method, an organic film is formed on a surface of the substrate. Subsequently, the etching target region is etched by plasma generated from a processing gas. The organic film is formed in a state that the substrate is placed in a processing space within a chamber. When the organic film is formed, a first gas containing a first organic compound is supplied toward the substrate, and then, a second gas containing a second organic compound is supplied toward the substrate. An organic compound constituting the organic film is generated by polymerization of the first organic compound and the second organic compound.
    Type: Grant
    Filed: December 21, 2018
    Date of Patent: September 15, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Masahiro Tabata, Toru Hisamatsu, Sho Kumakura, Ryuichi Asako, Shinya Ishikawa, Masanobu Honda
  • Publication number: 20200279733
    Abstract: Provided is a method of processing a substrate including an etching target film and a mask having an opening formed on the etching target film. The method includes a) providing the substrate on a stage in a chamber and b) forming a film having a thickness that differs along a film thickness direction of the mask, on a side wall of the opening.
    Type: Application
    Filed: February 27, 2020
    Publication date: September 3, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Sho KUMAKURA, Maju TOMURA, Yoshihide KIHARA, Hironari SASAGAWA
  • Publication number: 20200279757
    Abstract: A substrate processing method includes (a) forming a recess on a workpiece by partially etching the workpiece; and (b) forming a film having a thickness that differs along a depth direction of the recess, on a side wall of the recess. Step (b) includes (b-1) supplying a first reactant, and causing the first reactant to be adsorbed to the side wall of the recess; and (b-2) supplying a second reactant, and causing the second reactant to react with the first reactant thereby forming a film.
    Type: Application
    Filed: February 28, 2020
    Publication date: September 3, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Sho KUMAKURA, Hironari SASAGAWA, Maju TOMURA, Yoshihide KIHARA
  • Publication number: 20200273699
    Abstract: A technique regarding film formation capable of forming a three-dimensional pattern successfully is provided. A film forming method for a processing target object is provided. The processing target object has a supporting base body and a processing target layer. The processing target layer is provided on a main surface of the supporting base body and includes protrusion regions. Each protrusion region is extended upwards from the main surface, and an end surface of each protrusion region is exposed when viewed from above the main surface. The film forming method includes a first process of forming a film on the end surface of each protrusion region; and a second process of selectively exposing one or more end surfaces by anisotropically etching the film formed through the first process.
    Type: Application
    Filed: May 13, 2020
    Publication date: August 27, 2020
    Inventors: Sho Kumakura, Masahiro Tabata
  • Patent number: 10755944
    Abstract: An etching method selectively etches a first region of a substrate with respect to a second region of the substrate. At least a portion of the first region, which includes the surface of the first region, is modified by plasma to form a first modified region. At least a portion of the second region, which includes the surface of the second region, is modified by plasma to form a second modified region. The first modified region is selectively etched with respect to the second modified region by plasma.
    Type: Grant
    Filed: December 7, 2018
    Date of Patent: August 25, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Masahiro Tabata, Sho Kumakura
  • Publication number: 20200234963
    Abstract: An etching method include: etching a silicon-containing film or a metal-containing film formed on a substrate; and heating the substrate by temporarily irradiating the substrate with electromagnetic waves during the etching.
    Type: Application
    Filed: January 16, 2020
    Publication date: July 23, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Sho KUMAKURA, Ryutaro SUDA
  • Publication number: 20200185238
    Abstract: Generation of a deposit can be suppressed and high selectivity can be acquired when etching a first region made of silicon nitride selectively against a second region made of silicon oxide. A method includes preparing a processing target object having the first region and the second region within a chamber provided in a chamber main body of a plasma processing apparatus; generating plasma of a first gas including a gas containing hydrogen within the chamber to form a modified region by modifying a part of the first region with active species of the hydrogen; and generating plasma of a second gas including a gas containing fluorine within the chamber to remove the modified region with active species of the fluorine.
    Type: Application
    Filed: February 19, 2020
    Publication date: June 11, 2020
    Inventors: Masahiro Tabata, Sho Kumakura
  • Publication number: 20200176265
    Abstract: A substrate processing method includes providing a processing target substrate having a pattern, forming a film on the substrate, forming a reaction layer on a surface layer of the substrate by plasma, and removing the reaction layer by applying energy to the substrate.
    Type: Application
    Filed: September 9, 2019
    Publication date: June 4, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Takayuki KATSUNUMA, Toru HISAMATSU, Shinya ISHIKAWA, Yoshihide KIHARA, Masanobu HONDA, Maju TOMURA, Sho KUMAKURA
  • Patent number: 10672605
    Abstract: A technique regarding film formation capable of forming a three-dimensional pattern successfully is provided. A film forming method for a processing target object is provided. The processing target object has a supporting base body and a processing target layer. The processing target layer is provided on a main surface of the supporting base body and includes protrusion regions. Each protrusion region is extended upwards from the main surface, and an end surface of each protrusion region is exposed when viewed from above the main surface. The film forming method includes a first process of forming a film on the end surface of each protrusion region; and a second process of selectively exposing one or more end surfaces by anisotropically etching the film formed through the first process.
    Type: Grant
    Filed: April 13, 2018
    Date of Patent: June 2, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Sho Kumakura, Masahiro Tabata
  • Patent number: 10600660
    Abstract: Generation of a deposit can be suppressed and high selectivity can be acquired when etching a first region made of silicon nitride selectively against a second region made of silicon oxide. A method includes preparing a processing target object having the first region and the second region within a chamber provided in a chamber main body of a plasma processing apparatus; generating plasma of a first gas including a gas containing hydrogen within the chamber to form a modified region by modifying a part of the first region with active species of the hydrogen; and generating plasma of a second gas including a gas containing fluorine within the chamber to remove the modified region with active species of the fluorine.
    Type: Grant
    Filed: April 25, 2019
    Date of Patent: March 24, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Masahiro Tabata, Sho Kumakura
  • Publication number: 20200058512
    Abstract: A selectivity can be improved in a desirable manner when etching a processing target object containing silicon carbide. An etching method of processing the processing target object, having a first region containing silicon carbide and a second region containing silicon nitride and in contact with the first region, includes etching the first region to remove the first region atomic layer by atomic layer by repeating a sequence comprising: generating plasma from a first gas containing nitrogen to form a mixed layer containing ions contained in the plasma generated from the first gas in an atomic layer of an exposed surface of the first region; and generating plasma from a second gas containing fluorine to remove the mixed layer by radicals contained in the plasma generated from the second gas.
    Type: Application
    Filed: October 23, 2019
    Publication date: February 20, 2020
    Inventors: Sho Kumakura, Masahiro Tabata