Patents by Inventor Sho Kumakura
Sho Kumakura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240128092Abstract: In one exemplary embodiment, a substrate processing method includes: (a) providing a substrate including a metal-containing film and a mask provided on the metal-containing film; (b) forming a protective film on the mask; and (c) etching the metal-containing film after (b). (c) includes (c1) forming a second metal-containing substance from a first metal-containing substance contained in the metal-containing film by using a first processing gas including a fluorine-containing gas, and (c2) removing the second metal-containing substance by using a second processing gas including a precursor.Type: ApplicationFiled: December 27, 2023Publication date: April 18, 2024Applicant: Tokyo Electron LimitedInventors: Yuta NAKANE, Sho KUMAKURA
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Patent number: 11961746Abstract: A substrate processing method includes (a) forming a recess on a workpiece by partially etching the workpiece; and (b) forming a film having a thickness that differs along a depth direction of the recess, on a side wall of the recess. Step (b) includes (b-1) supplying a first reactant, and causing the first reactant to be adsorbed to the side wall of the recess; and (b-2) supplying a second reactant, and causing the second reactant to react with the first reactant thereby forming a film.Type: GrantFiled: August 12, 2022Date of Patent: April 16, 2024Assignee: TOKYO ELECTRON LIMITEDInventors: Sho Kumakura, Hironari Sasagawa, Maju Tomura, Yoshihide Kihara
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Publication number: 20240120187Abstract: A plasma processing method includes providing a substrate having a recess is provided in a processing container; generating plasma in the processing container to form a film on the recess; monitoring a state of the plasma generated in the generating; and determining necessity of re-execution of the generating and processing conditions for the re-execution based on the monitored plasma state.Type: ApplicationFiled: December 20, 2023Publication date: April 11, 2024Applicant: Tokyo Electron LimitedInventors: Hironari SASAGAWA, Sho KUMAKURA
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Publication number: 20240047223Abstract: A substrate processing method according to the present disclosure includes: providing a substrate in a chamber, the substrate having an etching target film and a tin-containing film, the tin-containing film defining at least one opening on the etching target film; and forming a modified film by supplying a processing gas to the chamber to form the modified film on a surface of the tin-containing film, the processing gas including a halogen-containing gas or an oxygen-containing gas.Type: ApplicationFiled: October 12, 2023Publication date: February 8, 2024Inventors: Sho KUMAKURA, Kenta ONO, Shinya ISHIKAWA
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Patent number: 11862441Abstract: A plasma processing method includes providing a substrate having a recess is provided in a processing container; generating plasma in the processing container to form a film on the recess; monitoring a state of the plasma generated in the generating; and determining necessity of re-execution of the generating and processing conditions for the re-execution based on the monitored plasma state.Type: GrantFiled: May 26, 2021Date of Patent: January 2, 2024Assignee: TOKYO ELECTRON LIMITEDInventors: Hironari Sasagawa, Sho Kumakura
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Publication number: 20230282447Abstract: A plasma processing method includes: providing a substrate including a silicon-containing film and a mask film having an opening pattern, on a substrate support; and etching the silicon-containing film using the mask film as a mask, with a plasma generated by a plasma generator provided in the chamber. The etching includes: supplying a processing gas containing one or more gases including carbon, hydrogen, and fluorine into the chamber; generating a plasma from the processing gas by supplying a source RF signal to the plasma generator; and supplying a bias RF signal to the substrate support unit. In the etching, the silicon-containing film is etched by at least hydrogen fluoride generated from the processing gas, while forming a carbon-containing film on at least a part of a surface of the mask film.Type: ApplicationFiled: February 28, 2023Publication date: September 7, 2023Applicant: Tokyo Electron LimitedInventors: Takahiro YONEZAWA, Takayuki KATSUNUMA, Shinya ISHIKAWA, Koki TANAKA, Sho KUMAKURA
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Patent number: 11728166Abstract: Provided is a method of processing a substrate including an etching target film and a mask having an opening formed on the etching target film. The method includes a) providing the substrate on a stage in a chamber and b) forming a film having a thickness that differs along a film thickness direction of the mask, on a side wall of the opening.Type: GrantFiled: February 27, 2020Date of Patent: August 15, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Sho Kumakura, Maju Tomura, Yoshihide Kihara, Hironari Sasagawa
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Patent number: 11637025Abstract: Generation of a deposit can be suppressed and high selectivity can be acquired when etching a first region made of silicon nitride selectively against a second region made of silicon oxide. A method includes preparing a processing target object having the first region and the second region within a chamber provided in a chamber main body of a plasma processing apparatus; generating plasma of a first gas including a gas containing hydrogen within the chamber to form a modified region by modifying a part of the first region with active species of the hydrogen; and generating plasma of a second gas including a gas containing fluorine within the chamber to remove the modified region with active species of the fluorine.Type: GrantFiled: February 19, 2020Date of Patent: April 25, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Masahiro Tabata, Sho Kumakura
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Patent number: 11574806Abstract: A technique regarding film formation capable of forming a three-dimensional pattern successfully is provided. A film forming method for a processing target object is provided. The processing target object has a supporting base body and a processing target layer. The processing target layer is provided on a main surface of the supporting base body and includes protrusion regions. Each protrusion region is extended upwards from the main surface, and an end surface of each protrusion region is exposed when viewed from above the main surface. The film forming method includes a first process of forming a film on the end surface of each protrusion region; and a second process of selectively exposing one or more end surfaces by anisotropically etching the film formed through the first process.Type: GrantFiled: May 13, 2020Date of Patent: February 7, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Sho Kumakura, Masahiro Tabata
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Publication number: 20230010069Abstract: A method of processing a substrate is provided. The substrate includes an etching target region and a patterned region. The patterned region is provided on the etching target region. In the method, an organic film is formed on a surface of the substrate. Subsequently, the etching target region is etched by plasma generated from a processing gas. The organic film is formed in a state that the substrate is placed in a processing space within a chamber. When the organic film is formed, a first gas containing a first organic compound is supplied toward the substrate, and then, a second gas containing a second organic compound is supplied toward the substrate. An organic compound constituting the organic film is generated by polymerization of the first organic compound and the second organic compound.Type: ApplicationFiled: August 18, 2022Publication date: January 12, 2023Inventors: Masahiro Tabata, Toru Hisamatsu, Sho Kumakura, Ryuichi Asako, Shinya Ishikawa, Masanobu Honda
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Publication number: 20220411928Abstract: A plasma processing apparatus in the present disclosure includes a plasma processing chamber, a gas supply, a power supply, and a controller. The controller causes (a) forming a first film on side walls of an opening of a processing target using the plasma so that the first film has different thicknesses along a spacing between pairs of side walls facing each other, and (b) forming a second film by performing a film forming cycle one or more times after (a) so that the second film has different thicknesses along the spacing between the pairs of side walls facing each other.Type: ApplicationFiled: August 31, 2022Publication date: December 29, 2022Applicant: Tokyo Electro LimitedInventors: Michiko NAKAYA, Toru Hisamatsu, Shinya Ishikawa, Sho Kumakura, Masanobu Honda, Yoshihide Kihara
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Publication number: 20220406609Abstract: A plasma processing method includes: providing a substrate including: (a) an etching target film; (b) a photoresist film on an upper surface of the etching target film, having a side surface that defines at least one opening in the upper surface of the etching target film; and (c) a first film including a first portion on an upper surface of the photoresist film and second portion on the side surface of the photoresist film, the first portion having a film thickness larger than that of the second portion; and trimming at least a part of the side surface of the photoresist film and at least a part of the second portion of the first film.Type: ApplicationFiled: June 22, 2022Publication date: December 22, 2022Applicant: Tokyo Electron LimitedInventors: Takahiro YONEZAWA, Sho KUMAKURA
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Publication number: 20220399212Abstract: A substrate processing method includes (a) forming a recess on a workpiece by partially etching the workpiece; and (b) forming a film having a thickness that differs along a depth direction of the recess, on a side wall of the recess. Step (b) includes (b-1) supplying a first reactant, and causing the first reactant to be adsorbed to the side wall of the recess; and (b-2) supplying a second reactant, and causing the second reactant to react with the first reactant thereby forming a film.Type: ApplicationFiled: August 12, 2022Publication date: December 15, 2022Applicant: Tokyo Electron LimitedInventors: Sho KUMAKURA, Hironari SASAGAWA, Maju TOMURA, Yoshihide KIHARA
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Publication number: 20220384151Abstract: In one exemplary embodiment, a substrate processing method is provided. This substrate processing method comprises the steps of: providing a substrate including a metal compound film and a mask defining an opening on the metal compound film to a plasma processing chamber; and etching the metal compound film by forming a plasma from a first processing gas including a boron- and halogen-containing gas and a hydrogen-containing gas.Type: ApplicationFiled: March 22, 2022Publication date: December 1, 2022Inventors: Yuta NAKANE, Sho KUMAKURA, Shinya ISHIKAWA
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Patent number: 11488836Abstract: A method of processing a substrate is provided. The substrate includes an etching target region and a patterned region. The patterned region is provided on the etching target region. In the method, an organic film is formed on a surface of the substrate. Subsequently, the etching target region is etched by plasma generated from a processing gas. The organic film is formed in a state that the substrate is placed in a processing space within a chamber. When the organic film is formed, a first gas containing a first organic compound is supplied toward the substrate, and then, a second gas containing a second organic compound is supplied toward the substrate. An organic compound constituting the organic film is generated by polymerization of the first organic compound and the second organic compound.Type: GrantFiled: August 21, 2020Date of Patent: November 1, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Masahiro Tabata, Toru Hisamatsu, Sho Kumakura, Ryuichi Asako, Shinya Ishikawa, Masanobu Honda
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Patent number: 11459655Abstract: A plasma processing method executed by a plasma processing apparatus in the present disclosure includes a first step and a second step. In the first step, the plasma processing apparatus forms a first film on the side walls of an opening in the processing target, the first film having different thicknesses along a spacing between pairs of side walls facing each other. In the second step, the plasma processing apparatus forms a second film by performing a film forming cycle once or more times after the first step, the second film having different thicknesses along the spacing between the pairs of side walls facing each other.Type: GrantFiled: July 26, 2019Date of Patent: October 4, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Michiko Nakaya, Toru Hisamatsu, Shinya Ishikawa, Sho Kumakura, Masanobu Honda, Yoshihide Kihara
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Publication number: 20220301881Abstract: A technique improves pattern features formed by etching and the uniformity of the features across the surface of a substrate. An etching method includes steps a), b), c), d), and e). Step a) includes placing, on a support, a substrate including a target film. Step b) includes partially etching the target film and forming a recess. Step c) includes setting the temperature of the support at a first temperature, and forming, on a sidewall of the recess, a first film having a first film thickness distribution. Step d) includes partially further etching the target film having the first film formed on the target film. Step e) includes setting the temperature of the support at a second temperature different from the first temperature, and forming, on the sidewall of the recess, a second film having a second film thickness distribution different from the first film thickness distribution.Type: ApplicationFiled: June 6, 2022Publication date: September 22, 2022Applicant: Tokyo Electron LimitedInventors: Maju TOMURA, Sho KUMAKURA, Hironari SASAGAWA, Yoshihide KIHARA
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Patent number: 11450537Abstract: A substrate processing method includes (a) forming a recess on a workpiece by partially etching the workpiece; and (b) forming a film having a thickness that differs along a depth direction of the recess, on a side wall of the recess. Step (b) includes (b-1) supplying a first reactant, and causing the first reactant to be adsorbed to the side wall of the recess; and (b-2) supplying a second reactant, and causing the second reactant to react with the first reactant thereby forming a film.Type: GrantFiled: February 28, 2020Date of Patent: September 20, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Sho Kumakura, Hironari Sasagawa, Maju Tomura, Yoshihide Kihara
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Publication number: 20220246440Abstract: A substrate processing method includes: (a) providing a substrate including an etching target film, a first mask formed on the etching target film, and a second mask formed on the first mask, the second mask being different in film type from the first mask and having an opening; (b) selectively etching the first mask with respect to the second mask, thereby forming an opening in the first mask such that an opening dimension of at least a portion of the first mask is larger than an opening dimension of a bottom of the second mask; and (c) etching the etching target film.Type: ApplicationFiled: January 27, 2022Publication date: August 4, 2022Applicant: Tokyo Electron LimitedInventors: Sho KUMAKURA, Yusuke TAKINO
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Patent number: 11380555Abstract: A technique improves pattern features formed by etching and the uniformity of the features across the surface of a substrate. An etching method includes steps a), b), c), d), and e). Step a) includes placing, on a support, a substrate including a target film. Step b) includes partially etching the target film and forming a recess. Step c) includes setting the temperature of the support at a first temperature, and forming, on a sidewall of the recess, a first film having a first film thickness distribution. Step d) includes partially further etching the target film having the first film formed on the target film. Step e) includes setting the temperature of the support at a second temperature different from the first temperature, and forming, on the sidewall of the recess, a second film having a second film thickness distribution different from the first film thickness distribution.Type: GrantFiled: November 20, 2020Date of Patent: July 5, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Maju Tomura, Sho Kumakura, Hironari Sasagawa, Yoshihide Kihara