Patents by Inventor Sho Kumakura
Sho Kumakura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220199371Abstract: A substrate processing method includes forming a pre-coat film on an in-chamber part disposed in a chamber, and subsequently processing one or more substrates. The forming a pre-coat film includes forming a first film on the in-chamber part without using plasma or by using a first plasma generated under a condition that sputtering is suppressed on the in-chamber part, and forming a second film on a surface of the first film by using a second plasma.Type: ApplicationFiled: December 21, 2021Publication date: June 23, 2022Applicant: Tokyo Electron LimitedInventors: Sho KUMAKURA, Yuta NAKANE
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Publication number: 20220115241Abstract: A substrate processing apparatus includes: a chamber having at least one gas inlet and at least one gas outlet; a substrate support disposed in the chamber; and a controller. The controller causes (a) placing a substrate on the substrate support, the substrate including a base layer and a first layer formed on the base layer; (b) etching the first layer to form a recess in the first layer; (c) when determined that the recess satisfies a predetermined condition, forming a first film on a bottom surface of the recess by forming an inhibitor on the bottom surface of the recess, a predetermined gas species being not adsorbed to the first film; (c) after (b), forming a second film on a side wall of the recess using the predetermined gas species as a precursor gas; and (d) etching the first layer through the recess.Type: ApplicationFiled: December 22, 2021Publication date: April 14, 2022Applicant: Tokyo Electron LimitedInventors: Masahiro Tabata, Sho Kumakura
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Patent number: 11239090Abstract: A plasma processing method executed by a plasma processing apparatus includes steps of an opening formation, a first film formation, a second film formation, and an etching. In the opening formation, the plasma processing apparatus performs etching on a substrate including a base layer and a first layer formed on the base layer so as to form an opening in the first layer. When determined that the opening satisfies a predetermined condition, in the first film formation, the plasma processing apparatus forms an inhibitor on a bottom surface of the opening so as to form a first film to which a predetermined gas species is not adsorbed. After the formation of the first film, the plasma processing apparatus forms a second film on the side wall of the opening in the second film formation. The plasma processing apparatus also performs etching in the opening in the etching.Type: GrantFiled: July 24, 2019Date of Patent: February 1, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Masahiro Tabata, Sho Kumakura
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Publication number: 20220005700Abstract: A selectivity can be improved in a desirable manner when etching a processing target object containing silicon carbide. An etching method of processing the processing target object, having a first region containing silicon carbide and a second region containing silicon nitride and in contact with the first region, includes etching the first region to remove the first region atomic layer by atomic layer by repeating a sequence comprising: generating plasma from a first gas containing nitrogen to form a mixed layer containing ions contained in the plasma generated from the first gas in an atomic layer of an exposed surface of the first region; and generating plasma from a second gas containing fluorine to remove the mixed layer by radicals contained in the plasma generated from the second gas.Type: ApplicationFiled: September 14, 2021Publication date: January 6, 2022Inventors: Sho Kumakura, Masahiro Tabata
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Publication number: 20210375602Abstract: A plasma processing method includes providing a substrate having a recess is provided in a processing container; generating plasma in the processing container to form a film on the recess; monitoring a state of the plasma generated in the generating; and determining necessity of re-execution of the generating and processing conditions for the re-execution based on the monitored plasma state.Type: ApplicationFiled: May 26, 2021Publication date: December 2, 2021Applicant: TOKYO ELECTRON LIMITEDInventors: Hironari SASAGAWA, Sho KUMAKURA
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Patent number: 11145518Abstract: A selectivity can be improved in a desirable manner when etching a processing target object containing silicon carbide. An etching method of processing the processing target object, having a first region containing silicon carbide and a second region containing silicon nitride and in contact with the first region, includes etching the first region to remove the first region atomic layer by atomic layer by repeating a sequence comprising: generating plasma from a first gas containing nitrogen to form a mixed layer containing ions contained in the plasma generated from the first gas in an atomic layer of an exposed surface of the first region; and generating plasma from a second gas containing fluorine to remove the mixed layer by radicals contained in the plasma generated from the second gas.Type: GrantFiled: October 23, 2019Date of Patent: October 12, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Sho Kumakura, Masahiro Tabata
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Patent number: 11139169Abstract: An etching method and an etching apparatus improve the shape of a mask deformed by an etching process. The etching method for etching a film with plasma includes a step of providing a substrate, an etching step, and a correction step. In the step of providing a substrate, a substrate having a mask formed on a first film is provided. In the etching step, the first film is etched with plasma generated from a first gas containing Xe, Kr, or Rn so that an aspect ratio of a hole or a groove formed in the first film is 30 or more. In the correction step, the shape of the mask is corrected with plasma generated from a second gas.Type: GrantFiled: June 15, 2020Date of Patent: October 5, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Sho Kumakura, Satoshi Ohuchida, Maju Tomura
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Patent number: 11114304Abstract: A substrate processing method includes providing a processing target substrate having a pattern, forming a film on the substrate, forming a reaction layer on a surface layer of the substrate by plasma, and removing the reaction layer by applying energy to the substrate.Type: GrantFiled: September 9, 2019Date of Patent: September 7, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Takayuki Katsunuma, Toru Hisamatsu, Shinya Ishikawa, Yoshihide Kihara, Masanobu Honda, Maju Tomura, Sho Kumakura
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Patent number: 11094550Abstract: An etching method include: etching a silicon-containing film or a metal-containing film formed on a substrate; and heating the substrate by temporarily irradiating the substrate with electromagnetic waves during the etching.Type: GrantFiled: January 16, 2020Date of Patent: August 17, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Sho Kumakura, Ryutaro Suda
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Publication number: 20210233778Abstract: An etching method includes forming a film on a surface of a substrate having a region to be etched and a mask. The mask is provided on the region and includes an opening that partially exposes the region. The film is made of the same material as that of the region. The etching method further includes etching the region.Type: ApplicationFiled: January 28, 2021Publication date: July 29, 2021Applicant: TOKYO ELECTRON LIMITEDInventors: Maju TOMURA, Tomohiko NIIZEKI, Takayuki KATSUNUMA, Hironari SASAGAWA, Yuta NAKANE, Shinya ISHIKAWA, Kenta ONO, Sho KUMAKURA, Yusuke TAKINO, Masanobu HONDA
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Publication number: 20210159084Abstract: A technique improves pattern features formed by etching and the uniformity of the features across the surface of a substrate. An etching method includes steps a), b), c), d), and e). Step a) includes placing, on a support, a substrate including a target film. Step b) includes partially etching the target film and forming a recess. Step c) includes setting the temperature of the support at a first temperature, and forming, on a sidewall of the recess, a first film having a first film thickness distribution. Step d) includes partially further etching the target film having the first film formed on the target film. Step e) includes setting the temperature of the support at a second temperature different from the first temperature, and forming, on the sidewall of the recess, a second film having a second film thickness distribution different from the first film thickness distribution.Type: ApplicationFiled: November 20, 2020Publication date: May 27, 2021Applicant: Tokyo Electron LimitedInventors: Maju Tomura, Sho Kumakura, Hironari Sasagawa, Yoshihide Kihara
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Patent number: 10916420Abstract: A substrate processing method includes: providing a substrate in a processing container; selectively forming a first film on a surface of a substrate by plasma enhanced vapor deposition (PECVD); and forming a second film by atomic layer deposition (ALD) in a region of the substrate where the first film does not exist. The second film is formed by repeatedly performing a sequence including: forming a precursor layer on the surface of the substrate; purging an interior of the processing container after forming of the precursor; converting the precursor layer into the second film; and purging a space in the processing container after the converting. A plasma processing apparatus performing the method is also provided.Type: GrantFiled: August 29, 2019Date of Patent: February 9, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Masahiro Tabata, Toru Hisamatsu, Maju Tomura, Sho Kumakura, Hironari Sasagawa
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Publication number: 20200402800Abstract: An etching method and an etching apparatus improve the shape of a mask deformed by an etching process. The etching method for etching a film with plasma includes a step of providing a substrate, an etching step, and a correction step. In the step of providing a substrate, a substrate having a mask formed on a first film is provided. In the etching step, the first film is etched with plasma generated from a first gas containing Xe, Kr, or Rn so that an aspect ratio of a hole or a groove formed in the first film is 30 or more. In the correction step, the shape of the mask is corrected with plasma generated from a second gas.Type: ApplicationFiled: June 15, 2020Publication date: December 24, 2020Applicant: TOKYO ELECTRON LIMITEDInventors: Sho Kumakura, Satoshi Ohuchida, Maju Tomura
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Publication number: 20200381265Abstract: A method of processing a substrate is provided. The substrate includes an etching target region and a patterned region. The patterned region is provided on the etching target region. In the method, an organic film is formed on a surface of the substrate. Subsequently, the etching target region is etched by plasma generated from a processing gas. The organic film is formed in a state that the substrate is placed in a processing space within a chamber. When the organic film is formed, a first gas containing a first organic compound is supplied toward the substrate, and then, a second gas containing a second organic compound is supplied toward the substrate. An organic compound constituting the organic film is generated by polymerization of the first organic compound and the second organic compound.Type: ApplicationFiled: August 21, 2020Publication date: December 3, 2020Inventors: Masahiro Tabata, Toru Hisamatsu, Sho Kumakura, Ryuichi Asako, Shinya Ishikawa, Masanobu Honda
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Patent number: 10777425Abstract: A method of processing a substrate is provided. The substrate includes an etching target region and a patterned region. The patterned region is provided on the etching target region. In the method, an organic film is formed on a surface of the substrate. Subsequently, the etching target region is etched by plasma generated from a processing gas. The organic film is formed in a state that the substrate is placed in a processing space within a chamber. When the organic film is formed, a first gas containing a first organic compound is supplied toward the substrate, and then, a second gas containing a second organic compound is supplied toward the substrate. An organic compound constituting the organic film is generated by polymerization of the first organic compound and the second organic compound.Type: GrantFiled: December 21, 2018Date of Patent: September 15, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Masahiro Tabata, Toru Hisamatsu, Sho Kumakura, Ryuichi Asako, Shinya Ishikawa, Masanobu Honda
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Publication number: 20200279733Abstract: Provided is a method of processing a substrate including an etching target film and a mask having an opening formed on the etching target film. The method includes a) providing the substrate on a stage in a chamber and b) forming a film having a thickness that differs along a film thickness direction of the mask, on a side wall of the opening.Type: ApplicationFiled: February 27, 2020Publication date: September 3, 2020Applicant: TOKYO ELECTRON LIMITEDInventors: Sho KUMAKURA, Maju TOMURA, Yoshihide KIHARA, Hironari SASAGAWA
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Publication number: 20200279757Abstract: A substrate processing method includes (a) forming a recess on a workpiece by partially etching the workpiece; and (b) forming a film having a thickness that differs along a depth direction of the recess, on a side wall of the recess. Step (b) includes (b-1) supplying a first reactant, and causing the first reactant to be adsorbed to the side wall of the recess; and (b-2) supplying a second reactant, and causing the second reactant to react with the first reactant thereby forming a film.Type: ApplicationFiled: February 28, 2020Publication date: September 3, 2020Applicant: TOKYO ELECTRON LIMITEDInventors: Sho KUMAKURA, Hironari SASAGAWA, Maju TOMURA, Yoshihide KIHARA
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Publication number: 20200273699Abstract: A technique regarding film formation capable of forming a three-dimensional pattern successfully is provided. A film forming method for a processing target object is provided. The processing target object has a supporting base body and a processing target layer. The processing target layer is provided on a main surface of the supporting base body and includes protrusion regions. Each protrusion region is extended upwards from the main surface, and an end surface of each protrusion region is exposed when viewed from above the main surface. The film forming method includes a first process of forming a film on the end surface of each protrusion region; and a second process of selectively exposing one or more end surfaces by anisotropically etching the film formed through the first process.Type: ApplicationFiled: May 13, 2020Publication date: August 27, 2020Inventors: Sho Kumakura, Masahiro Tabata
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Patent number: 10755944Abstract: An etching method selectively etches a first region of a substrate with respect to a second region of the substrate. At least a portion of the first region, which includes the surface of the first region, is modified by plasma to form a first modified region. At least a portion of the second region, which includes the surface of the second region, is modified by plasma to form a second modified region. The first modified region is selectively etched with respect to the second modified region by plasma.Type: GrantFiled: December 7, 2018Date of Patent: August 25, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Masahiro Tabata, Sho Kumakura
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Publication number: 20200234963Abstract: An etching method include: etching a silicon-containing film or a metal-containing film formed on a substrate; and heating the substrate by temporarily irradiating the substrate with electromagnetic waves during the etching.Type: ApplicationFiled: January 16, 2020Publication date: July 23, 2020Applicant: TOKYO ELECTRON LIMITEDInventors: Sho KUMAKURA, Ryutaro SUDA