Abstract: According to one embodiment, an apparatus includes an average calculation portion which performs a average calculating process between frames by use of an input signal and one-frame delay signal and acquires an output signal having cross color and dot disturbance components reduced, and an up-convert signal detecting portion which sets the inter-frame mean delay processing portion into an operative state when the input signal is an up-convert signal obtained by up-converting a low-resolution signal into a high-resolution signal.

Abstract: In a switching apparatus having a pair of electrodes including a first electrode and a third electrode, which are provided with a piezoelectric element therebetween and a pair of electrodes including a second electrode and a fourth electrode, which are provided adjacently to the pair of the first and third electrodes in a state where they are electrically insulated from the first and third electrodes, an electric field in a first direction is generated between the first electrode and the third electrode, and simultaneously an electric field in a second direction is generated between the second electrode and the fourth electrode.

Abstract: A ferroelectric element is described which has a structure including a common electrode 11, a ferroelectric film 10 formed on the common electrode 11, an individual electrode 3 formed on the ferroelectric film 10, a lead wire 15 for feeding electric power to the individual electrode 3, which is formed on the same plane as of the individual electrode 3, and a protection film 16 entirely covering the exposed parts of the ferroelectric film 10 and the individual electrode 3, and covering the lead wire 15. The protection film 16 is preferably made of a material whose Young's modulus is smaller than that of the ferroelectric film 10, exactly 1/20 or smaller of the Young's modulus of the ferroelectric film 10. Further, the ferroelectric film is formed with the insulation reinforcing film containing at least one of the elements constituting the ferroelectric film.

Abstract: A piezoelectric actuator 21 has: a piezoelectric actuator part 22 made up of a common electrode 27, a piezoelectric element 29, and an individual electrode 33; an electrical interconnection joint part 43 formed on the individual electrode 33; an electrical interconnection 45 formed on the electrical interconnection joint part 43; a head block 47 fixed to a nozzle plate 39 through the electrical interconnection 45; and a PI tape 49 disposed within the head block 47. A closed space 57 is defined between the head block 47 and the nozzle plate 39. The closed space 57 is divided by the PI tape 49 into two sections. Of these two sections of the closed space 57, the one on the side of the head block 47 constitutes a first closed space 57a. A moisture absorbent 52 is sealed within the first closed space 57a. Relative humidity within the closed space 57 of the ink jet head 1 is not less than 0% nor more than 20%.

Abstract: A piezoelectric actuator 21 has: a piezoelectric actuator part 22 made up of a common electrode 27, a piezoelectric element 29, and an individual electrode 33; an electrical interconnection joint part 43 formed on the individual electrode 33; an electrical interconnection 45 formed on the electrical interconnection joint part 43; a head block 47 fixed to a nozzle plate 39 through the electrical interconnection 45; and a PI tape 49 disposed within the head block 47. A closed space 57 is defined between the head block 47 and the nozzle plate 39. The closed space 57 is divided by the PI tape 49 into two sections. Of these two sections of the closed space 57, the one on the side of the head block 47 constitutes a first closed space 57a. A moisture absorbent 52 is sealed within the first closed space 57a. Relative humidity within the closed space 57 of the ink jet head 1 is not less than 0% nor more than 20%.

Abstract: A piezoelectric actuator is constructed by forming a common electrode 27 of Cr, a piezoelectric layer 29 of Pb(Zr,Ti)O3, a cover layer 31 of BaTiO3, and an individual electrode 33 of Pt in this order into a laminate. The thickness of the piezoelectric layer 29 in the lamination direction (T1) and the thickness of the cover layer 31 in the lamination direction (T2) satisfy the relationship of 0.08?T2/T1?1. The relative dielectric constant of the piezoelectric layer 29 (?r1) and the relative dielectric constant of the cover layer 31 (?r2) satisfy the relationship of ?r2/?r1?0.2.

Abstract: It is an object of the invention to provide an aberration correcting mirror which has a small size, power saving, a low voltage, a low price and high precision. In particular, it is an object to provide a practical mirror for correcting a spherical aberration.

Abstract: To provide a form variable mirror element and a form variable mirror unit which are extremely thin with a simple structure and large in an amount of deformation even under low applied voltage, a form variable mirror element comprising: a form variable part including a piezoelectric film, a first electrode film and a second electrode film for supplying voltage to the piezoelectric film and a reflection mirror film provided in the piezoelectric film; and a base for supporting the form variable part. The form variable part is provided with an elastic unit forgiving elasticity to the form variable part. Thus, the films are laminated on the thin base by a thin film forming technique. Accordingly, the extremely thin form variable mirror element can be formed with a simple structure, so that a large amount of deformation can be effectively obtained even when low voltage is applied.

Abstract: In a film bulk acoustic resonator, a multi-layered member is placed on a substrate. The multi-layered member has: a common electrode; a piezoelectric layer formed on the common electrode; a first electrode which is formed on the piezoelectric layer, and which is used for a resonator; a second electrode which surrounds the edge of the first electrode with forming a gap therebetween, and which is used for a spurious suppressing element; a first wiring through which an electric power is supplied to the first electrode; and a second wiring through which an electric power is supplied to the second electrode. In the film bulk acoustic resonator, the piezoelectric layer includes a ferroelectric film, and a polarization state of the ferroelectric film corresponding to the resonator is different from a polarization state of the ferroelectric film corresponding to the spurious suppressing element.

Abstract: In a switching apparatus having a pair of electrodes comprising a first electrode and a third electrode which are provided with a piezoelectric element between and a pair of electrodes comprising a second electrode and a fourth electrode which are provided adjacently to a pair of the first and third electrodes in a state where they are electrically insulated from a pair of the first and third electrodes, an electric field in a first direction is generated between the first electrode and the third electrode, and simultaneously an electric field in a second direction is generated between the second electrode and the fourth electrode.

Abstract: A method and apparatus for a piezo-electric thin film element includes a substrate, a first electrode formed on the substrate, a dielectric thin film formed on the first electrode, and a second electrode formed on the dielectric film. The dielectric film includes a piezo-electric layer exhibiting piezo-electric characteristics, and a stress-reducing layer for lowering the stress between the substrate and the dielectric film.

Abstract: A piezoelectric actuator 21 has: a piezoelectric actuator part 22 made up of a common electrode 27, a piezoelectric element 29, and an individual electrode 33; an electrical interconnection joint part 43 formed on the individual electrode 33; an electrical interconnection 45 formed on the electrical interconnection joint part 43; a head block 47 fixed to a nozzle plate 39 through the electrical interconnection 45; and a PI tape 49 disposed within the head block 47. A closed space 57 is defined between the head block 47 and the nozzle plate 39. The closed space 57 is divided by the PI tape 49 into two sections. Of these two sections of the closed space 57, the one on the side of the head block 47 constitutes a first closed space 57a. A moisture absorbent 52 is sealed within the first closed space 57a. Relative humidity within the closed space 57 of the ink jet head 1 is not less than 0% nor more than 20%.

Abstract: A ferroelectric element is described which has a structure including a common electrode 11, a ferroelectric film 10 formed on the common electrode 11, an individual electrode 3 formed on the ferroelectric film 10, a lead wire 15 for feeding electric power to the individual electrode 3, which is formed on the same plane as of the individual electrode 3, and a protection film 16 entirely covering the exposed parts of the ferroelectric film 10 and the individual electrode 3, and covering the lead wire 15. The protection film 16 is preferably made of a material whose Young's modulus is smaller than that of the ferroelectric film 10, exactly {fraction (1/20)} or smaller of the Young's modulus of the ferroelectric film 10. Further, the ferroelectric film is formed with the insulation reinforcing film containing at least one of the elements constituting the ferroelectric film.

Abstract: A carbon dioxide gas sensor for detecting carbon dioxide gas concentration wherein the carbon dioxide gas detection part consists essentially of a carbonate, a carbonate decomposition catalyst and a semiconductor oxide, particularly preferably BaCO3, CeO.sub.2 and CuO mixed in a specific molar ratio.A process for producing the carbon dioxide detection part of a carbon dioxide gas sensor, wherein the raw-materials in the form of acetic acid salts are uniformly dissolved in a solvent, then dried and ground to produce a ceramic material with a small average particle diameter.

Abstract: In a thin film capacitor in which a lower electrode,a dielectric film and an upper electrode are formed in order on a substrate, both the lower and upper electrodes are respectively formed with a first conductive layer made of Ti, Ta, Mo and W and a second conductive layer made of Pt, Pd, Rh and Al in this order from the substrate. In addition, a conductive metal oxide film such as made of PdO and others is formed, as required, at least between the lower electrode and the dielectric film or between the upper electrode and the dielectric film.

Abstract: A thin-film capacitor comprises a substrate, a first electrode, of polycrystalline silicon, a second electrode, a dielectric, and a third electrode such as aluminum in the structure stacked in sequence from bottom to top. The second electrode directly on which the dielectric layer is formed is made from a member selected from the group consisting of ruthenium, ruthenium oxide, ruthenium silicide, rhenium, rhenium oxide, rhemium silicide, osmium, osmium oxide, osmium silicide, rhodium, rhodium oxide, rhodium silicide, iridium, iridium oxide and iridium silicide.

Abstract: An electronic device substrate includes a spinel epitaxial film formed on a silicon single-crystal substrate and an oxide superconductor layer formed on the spinel film. The oxide superconductor layer is represented by formula P.sub.x (Q,Ca).sub.y Cu.sub.z O.sub..delta. and contains at least one element of Bi and Tl as P and at least one element of Sr and Ba as Q. Composition ratios fall within ranges of 0.08.ltoreq.x/(x+y+z).ltoreq.0.41, 0.29.ltoreq.y/(x+y+z).ltoreq.0.47 and 1.ltoreq.Q/Ca.ltoreq.3.

Abstract: This film capacitors in accordance with the present invention include a silicon electrode, a first electrode layer consisting of either one of titanium, titanium silicide, titanium nitride, tantalum, molybdenum, tungsten, tantalum silicide, molybdenum silicide, tungsten silicide, alloys thereof and compounds thereby, formed on the silicon electrode, a second electrode layer formed on it consisting of platinum, palladium or rhodium, a dielectric layer formed on it consisting of an oxide ferroelectric substance such as BaTiO.sub.3 and a third electrode layer formed on top of it. As the first electrode layer, use may also be made of rhenium oxide, osmium oxide, rhodium oxide or iridium oxide.