Abstract: A method for manufacturing a semiconductor device includes preparing a plurality of semiconductor elements, preparing a support member, attaching the plurality of semiconductor elements to the support member so that second surfaces of the plurality of semiconductor elements face the support member, encapsulating the plurality of semiconductor elements with an encapsulation material, removing the support member from an encapsulation material layer in which the plurality of semiconductor elements is encapsulated with the encapsulation material, bonding a first protective film to a second surface of the encapsulation material layer located on the second surface side of the plurality of semiconductor elements, and forming a re-distribution layer on a first surface of the encapsulation material layer located on the first surface side of the plurality of semiconductor elements after bonding the first protective film to the encapsulation material layer.

Abstract: A control method for gas-shielded arc welding includes providing a normal arc period in which the welding current is maintained at a setting current Icc set in advance, and providing a separation control period after the separation timing of the molten droplet is detected in the normal arc period, the separation control period including a current decreasing section, a current maintaining section, and a current increasing section. In the separation control period, at least one of the following controls for preventing a short circuit is performed: control of an output voltage, control of a feeding speed, and control of a gas ratio.

Abstract: There is provided a semiconductor device including: an n-type semiconductor substrate having a first main surface and a second main surface on an opposite side of the first main surface; an n-type semiconductor layer arranged on the first main surface of the semiconductor substrate; a pair of trenches formed at a distance from each other on a surface of the semiconductor layer on an opposite side of the semiconductor substrate; a pair of gate electrodes buried in the pair of trenches; a gate insulating film interposed between the gate electrodes and the semiconductor layer; a source electrode formed on the surface of the semiconductor layer on the opposite side of the semiconductor substrate; and a drain electrode formed on the second main surface of the semiconductor substrate.

Abstract: A semiconductor device includes a switching element including a control electrode, a first main electrode, and a second main electrode: a gate driver connected between the control electrode and the first main electrode, configured to transmit a gate drive signal for driving the control electrode; a Miller voltage detector detecting a Miller voltage between the control electrode and the first main electrode when the switching element turns off; a current value detector detecting a principal current flowing through the switching element; and a temperature calculator calculating a temperature of the switching element from the detected Miller voltage and principal current.

Abstract: In order to realize a thermistor on a base substrate without restricting the layout of a wiring layer, a thermistor mounting apparatus is provided, the thermistor mounting apparatus including a base substrate, and a thermistor component provided over the base substrate, in which the thermistor component has an insulating substrate, an electrode provided over the insulating substrate, and a thermistor provided over the insulating substrate and electrically connected to the electrode.

Abstract: A drive unit of a semiconductor element including: a drive circuit for driving a control electrode of a voltage control semiconductor element to which a freewheeling diode is connected in anti-parallel; a resistor connected between the control electrode and the drive circuit; a capacitor having one terminal connected between the resistor and the control electrode; and a switch element connected between another terminal of the capacitor and a low-voltage-side electrode of the voltage control semiconductor element, wherein a control electrode of the switch element is connected to a connection point of the resistor and the capacitor.

Abstract: A semiconductor module, an upper and lower arm kit, and a three-level inverter can be provided at low cost and with broad current ratings and voltage ratings using existing packages, without developing new packages. A first semiconductor module on an upper arm side and a second semiconductor module on a lower arm side are made using an existing package, and the semiconductor modules and are used to configure an upper and lower arm kit. Further, the upper and lower arm kit is used to configure a three-level inverter. These devices can be formed using existing packages, and semiconductor modules, the upper and lower arm kit, and the three-level inverter can be therefore provided at low cost and with broad current ratings and voltage ratings.

Abstract: A semiconductor device includes a switching element including a control electrode, a first main electrode, and a second main electrode: a gate driver connected between the control electrode and the first main electrode, configured to transmit a gate drive signal for driving the control electrode; a Miller voltage detector detecting a Miller voltage between the control electrode and the first main electrode when the switching element turns off; a current value detector detecting a principal current flowing through the switching element; and a temperature calculator calculating a temperature of the switching element from the detected Miller voltage and principal current.

Abstract: A semiconductor module, an upper and lower arm kit, and a three-level inverter can be provided at low cost and with broad current ratings and voltage ratings using existing packages, without developing new packages. A first semiconductor module on an upper arm side and a second semiconductor module on a lower arm side are made using an existing package, and the semiconductor modules and are used to configure an upper and lower arm kit. Further, the upper and lower arm kit is used to configure a three-level inverter. These devices can be formed using existing packages, and semiconductor modules, the upper and lower arm kit, and the three-level inverter can be therefore provided at low cost and with broad current ratings and voltage ratings.

Abstract: A drive unit of a semiconductor element including: a drive circuit for driving a control electrode of a voltage control semiconductor element to which a freewheeling diode is connected in anti-parallel; a resistor connected between the control electrode and the drive circuit; a capacitor having one terminal connected between the resistor and the control electrode; and a switch element connected between another terminal of the capacitor and a low-voltage-side electrode of the voltage control semiconductor element, wherein a control electrode of the switch element is connected to a connection point of the resistor and the capacitor.

Abstract: A semiconductor module, an upper and lower arm kit, and a three-level inverter can be provided at low cost and with broad current ratings and voltage ratings using existing packages, without developing new packages. A first semiconductor module (100) on an upper arm side and a second semiconductor module (200) on a lower arm side are made using an existing package, and the semiconductor modules (100) and (200) are used to configure an upper and lower arm kit (300). Further, the upper and lower arm kit (300) is used to configure a three-level inverter (500). These devices can be formed using existing packages (56), and semiconductor modules (100), (200), the upper and lower arm kit (300), and the three-level inverter (500) can be therefore provided at low cost and with broad current ratings and voltage ratings.

Abstract: In order to realize a thermistor on a base substrate without restricting the layout of a wiring layer, a thermistor mounting apparatus is provided, the thermistor mounting apparatus including a base substrate, and a thermistor component provided over the base substrate, in which the thermistor component has an insulating substrate, an electrode provided over the insulating substrate, and a thermistor provided over the insulating substrate and electrically connected to the electrode.

Abstract: A power conversion device for driving a load, including a power conversion device main body configured to receive an input of a power supply voltage and to drive the load, and a brake circuit configured to protect the power conversion device main body from overvoltage applied thereto. The brake circuit includes a Zener diode that becomes conductive when the voltage applied to the power conversion device main body exceeds a predetermined value, to thereby suppress the voltage.

Abstract: A circuit assembly is disclosed which includes first and second substrates disposed on a heat dissipation base, and first and second semiconductor elements mounted on the first and second substrates. The first and second substrates are wired together, and three main electrode terminals are provided when the first and second semiconductor elements are connected in series, while two main electrode terminals are provided when the first and second semiconductor element are connected in parallel. In both cases, the circuit assembly is covered with a common exterior case so that one portion of each main electrode terminal or one portion of each main electrode terminal is exposed. Parts used in the circuit assembly are shared, and by changing the wiring between the first and second substrates, semiconductor modules with different functions are realized at low cost.

Abstract: A circuit assembly is disclosed which includes first and second substrates disposed on a heat dissipation base, and first and second semiconductor elements mounted on the first and second substrates. The first and second substrates are wired together, and three main electrode terminals are provided when the first and second semiconductor elements are connected in series, while two main electrode terminals are provided when the first and second semiconductor element are connected in parallel. In both cases, the circuit assembly is covered with a common exterior case so that one portion of each main electrode terminal or one portion of each main electrode terminal is exposed. Parts used in the circuit assembly are shared, and by changing the wiring between the first and second substrates, semiconductor modules with different functions are realized at low cost.

Abstract: A power conversion device for driving a load, including a power conversion device main body configured to receive an input of a power supply voltage and to drive the load, and a brake circuit configured to protect the power conversion device main body from overvoltage applied thereto. The brake circuit includes a Zener diode that becomes conductive when the voltage applied to the power conversion device main body exceeds a predetermined value, to thereby suppress the voltage.

Abstract: A semiconductor module, an upper and lower arm kit, and a three-level inverter can be provided with low cost and broad current ratings and voltage ratings using existing packages, without developing new packages. A first semiconductor module (100) on an upper arm side and a second semiconductor module (200) on a lower arm side are formed using an existing package, and the semiconductor modules (100) and (200) are used to configure an upper and lower arm kit (300). Further, the upper and lower arm kit (300) is used to configure a three-level inverter (500). These devices can be formed using existing packages (56), and semiconductor modules (100), (200), an upper and lower arm kit (300), and a three-level inverter (500) can be therefore provided with low cost and broad current ratings and voltage ratings.

Abstract: Certain embodiments provide an image reading apparatus including: a monochrome CCD sensor including a first photo-diode array; plural color CCD sensors each including a second photodiode array; an AD converter configured to apply analog-to-digital conversion to each of analog outputs from the second photodiode array and the first photodiode array; a delay processing unit configured to delay at least one of color image data of plural colors from the AD converter and interpolate, with delayed any one or more of the color image data, a blank of image data that is to be read on a line in a sub-scanning direction; and an inter-line correction unit configured to correct, by the intervals and a set reduction magnification, a positional deviation in the sub-scanning direction between the monochrome image data and the color image data, respective timings of which are aligned on the line by the delay processing unit.

Abstract: Certain embodiments provide an image reading apparatus including: a monochrome CCD sensor including a first photo-diode array; plural color CCD sensors each including a second photodiode array; an AD converter configured to apply analog-to-digital conversion to each of analog outputs from the second photodiode array and the first photodiode array; a delay processing unit configured to delay at least one of color image data of plural colors from the AD converter and interpolate, with delayed any one or more of the color image data, a blank of image data that is to be read on a line in a sub-scanning direction; and an inter-line correction unit configured to correct, by the intervals and a set reduction magnification, a positional deviation in the sub-scanning direction between the monochrome image data and the color image data, respective timings of which are aligned on the line by the delay processing unit.

Abstract: A polyarylene sulfide resin composition having an excellent fluidability and a good moldability is disclosed. The resin composition is useful as a material for an optical pick-up part which has a high reliability and a high tenacity and does not generate deviation of an optical axis with changes in environmental conditions such as temperature and humidity. The polyarylene sulfide resin composition comprises, as main components, a polyarylene sulfide resin, a fibrous filler and a particulate filler, and, optionally, a silane coupling agent and an alicyclic hydrocarbon.