Patents by Inventor Shohei Hata
Shohei Hata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7939938Abstract: A packaging structure for hermetically sealing a functional device by solder connection at a wafer level in which a first Si substrate having a concave portion metallized on its internal surface and a second Si substrate metallized at a position opposed to said concave portion are used, the metallization applied to the internal surface of the concave portion of the first Si substrate and the metallization applied to the second Si substrate at the position opposed to the concave portion are connected by molten solder to hermetically seal the functional device between the first Si substrate and the second Si substrate, whereby the wettability of the solder for the two Si substrates is improved, the bondability between the Si substrates is enhanced, and the yield at which the package is manufactured is improved.Type: GrantFiled: February 8, 2008Date of Patent: May 10, 2011Assignee: Hitachi Metals, Inc.Inventors: Shohei Hata, Naoki Matsushima, Eiji Sakamoto, Ryoji Okada, Takanori Aono, Atsushi Kazama, Toshiki Kida
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Publication number: 20110080657Abstract: There is provided means of achieving the improvement of optical coupling efficiency between a surface receiving/emitting element and an optical transmission path with a simple structure and low cost. An optical element and a substrate having an optical waveguide layer and electric wiring are connected with each other through a lens having a Fresnel lens shape. A through via is provided in the lens, and the optical element and the electric wiring in the substrate are electrically connected with each other through the through via. Instead of the lens, a unit in which a lens is mounted inside an optical-element mounting substrate may be used.Type: ApplicationFiled: August 30, 2010Publication date: April 7, 2011Inventors: Toshiaki Takai, Eiji Sakamoto, Shohei Hata
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Publication number: 20100328638Abstract: This invention provides a structurally-simple LED light source that is capable of preventing temperature variations among its multiple LED elements arranged densely on its LED-mounting substrate and also improving the heat release capabilities of the substrate by comprising an LED light source with: a plurality of LED elements each of which is formed by connecting an LED chip to electrodes formed on a ceramic substrate; an LED-mounting substrate on which to mount the plurality of LED elements, the LED-mounting substrate having through holes therein; and a heat sink plate for releasing heat from the LED-mounting substrate, wherein a thermally conductive resin is present between the LED-mounting substrate and the heat sink plate and wherein part of the thermally conductive resin protrudes from the through holes of the LED-mounting substrate and covers the top surface of the LED-mounting substrate on which the plurality of LED elements are mounted, so that the part of the thermally conductive resin is in contactType: ApplicationFiled: June 14, 2010Publication date: December 30, 2010Inventors: SUSUMU ISHIDA, Shohei Hata
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Patent number: 7842889Abstract: The present invention is characterized by a structure having a substrate 1, and metallization layers 2 formed on the substrate 1, on which a Sn solder film 3 and an Ag film 4 are formed. The Ag film 4 is a metal free from oxidization at room temperature in the atmosphere. In a wet process, since only an exposed side of the Sn solder film 3 is oxidized by the cell reaction of Ag and Sn, an upper surface of the Ag film 4 on the solder film, which would otherwise affect the connection, is not oxidized. Since the Ag film 4 melts into the Sn solder simultaneously with melting of the Sn solder film 3, the Ag film 4 does not hinder the connection.Type: GrantFiled: January 13, 2009Date of Patent: November 30, 2010Assignee: Hitachi Kyowa Engineering Co., Ltd.Inventors: Shohei Hata, Naoki Matsushima, Takeru Fujinaga
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Publication number: 20100209103Abstract: There are provided a downsized and low-cost optical module used as a terminal for wavelength multiplexing optical transmission and one-core bidirectional optical transmission which transmits lights of plural wavelengths through one optical fiber, and a method of manufacturing the optical module. A base on which plural optical elements are mounted, and an optical multiplexer and demultiplexer having wavelength selection filters and mirrors formed on both surfaces of a substrate are prepared. Those two parts are packed into a package so that an optical element mounted surface and a filter surface are substantially parallel to each other, and the optical elements are arranged to emit or receive lights obliquely to the base. With this configuration, because the optical multiplexer and demultiplexer can be mounted in parallel to an X-Y plane, a package can be easily machined by using a lathe, thereby enabling a reduction in the costs.Type: ApplicationFiled: November 24, 2009Publication date: August 19, 2010Applicant: HITACHI, LTD.Inventors: Yukio SAKIGAWA, Toshiaki TAKAI, Shohei HATA
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Publication number: 20100002987Abstract: A filter element includes a first glass substrate having a pair of parallel surfaces and a band pass filter arranged on one of the parallel surfaces, a pair of single-crystal substrates (Si wafers) each including a primary surface formed with a depression having an inclined surface with respect to the primary surface occupying at least one half of the opening of the depression, and a second glass substrate having an optical element. The primary surfaces of the single-crystal substrate pair are bonded to a pair of the surfaces of the glass substrate. The depressions are faced through the glass substrate and surround the band pass filter. By this configuration, the filter element can be mass produced with a high accuracy and a low cost by the wafer-level process.Type: ApplicationFiled: June 30, 2009Publication date: January 7, 2010Applicant: HITACHI, LTD.Inventors: Shohei HATA, Naoki MATSUSHIMA, Toshiaki TAKAI, Yukio SAKIGAWA, Satoshi ARAI
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Publication number: 20090219728Abstract: Submounts for mounting optical devices which have an excellent heat radiating property and can be formed in a wafer state in batch are provided. A metallized electrode including optical device mounting parts and wiring parts is formed on a surface of a first substrate containing an insulating material as a main component, a through hole is formed in a glass substrate serving as a second substrate, the optical device mounting parts of the first substrate are aligned to be located inside the through hole of the second substrate, and the first substrate and the second substrate are joined together by use of a method such as anodic bonding.Type: ApplicationFiled: April 4, 2007Publication date: September 3, 2009Applicants: Institut Francias Du Petrole, Institut National De La Recherche AgronomiqueInventors: Shohei Hata, Eiji Sakamoto, Naoki Matsushima, Hideaki Takemori, Masatoshi Seki
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Publication number: 20090126991Abstract: The present invention is characterized by a structure having a substrate 1, and metallization layers 2 formed on the substrate 1, on which a Sn solder film 3 and an Ag film 4 are formed. The Ag film 4 is a metal free from oxidization at room temperature in the atmosphere. In a wet process, since only an exposed side of the Sn solder film 3 is oxidized by the cell reaction of Ag and Sn, an upper surface of the Ag film 4 on the solder film, which would otherwise affect the connection, is not oxidized. Since the Ag film 4 melts into the Sn solder simultaneously with melting of the Sn solder film 3, the Ag film 4 does not hinder the connection.Type: ApplicationFiled: January 13, 2009Publication date: May 21, 2009Inventors: Shohei Hata, Naoki Matsushima, Takeru Fujinaga
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Patent number: 7511232Abstract: The present invention is characterized by a structure having a substrate 1, and metallization layers 2 formed on the substrate 1, on which a Sn solder film 3 and an Ag film 4 are formed. The Ag film 4 is a metal free from oxidization at room temperature in the atmosphere. In a wet process, since only an exposed side of the Sn solder film 3 is oxidized by the cell reaction of Ag and Sn, an upper surface of the Ag film 4 on the solder film, which would otherwise affect the connection, is not oxidized. Since the Ag film 4 melts into the Sn solder simultaneously with melting of the Sn solder film 3, the Ag film 4 does not hinder the connection.Type: GrantFiled: March 20, 2006Date of Patent: March 31, 2009Assignee: Hitachi Kyowa Engineering Co., Ltd.Inventors: Shohei Hata, Naoki Matsushima, Takeru Fujinaga
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Publication number: 20080233349Abstract: The present invention provides a low-cost MEMS functional device by improving air tightness of a jointed section by anode junction in wafer level packaging for MEMS based functional devices. The MEMS functional device comprises a function element section formed by processing a substrate mainly made of Si, a metallized film for sealing formed around the functional element, and a glass substrate jointed to the metallized film for sealing by anode junction. Formed on a surface of the metallized film for sealing is a metallized film containing at least one of Sn and Ti as a main component.Type: ApplicationFiled: October 26, 2007Publication date: September 25, 2008Inventors: Shohei Hata, Eiji Sakamoto, Naoki Matsushima
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Publication number: 20080217752Abstract: A packaging structure for hermitically sealing a functional device by solder connection at a wafer level in which a first Si substrate having a concave portion metallized on its internal surface and a second Si substrate metallized at a position opposed to said concave portion are used, the metallization applied to the internal surface of the concave portion of the first Si substrate and the metallization applied to the second Si substrate at the position opposed to the concave portion are connected by molten solder to hermetically seal the functional device between the first Si substrate and the second Si substrate, whereby the wettability of the solder for the two Si substrates is improved, the bondability between the Si substrates is enhanced, and the yield at which the package is manufactured is improved.Type: ApplicationFiled: February 8, 2008Publication date: September 11, 2008Inventors: Shohei Hata, Naoki Matsushima, Eiji Sakamoto, Ryoji Okada, Takanori Aono, Atsushi Kazama, Toshiki Kida
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Patent number: 7153758Abstract: In anodic bonding between a conductor or semiconductor and glass, in order to attain good adhesion at a lower bonding temperature than usual and improve the toughness at its boundary to obtain higher reliability for a bonded portion even in a case where bonded members are warped or dust is present at the bonding boundary, a soft metal film is formed on the surface of a conductor or semiconductor on which an active metal film having high reactivity with oxygen is formed, whereby a warp or dust, if any, can be absorbed by the deformation of the soft metal film, thereby to improve the adhesion at the boundary. Adhesion at the bonding boundary is improved even at a low bonding temperature of, e.g., about 200° C. Further, the toughness at the bonding boundary can be improved to increase reliability by roughening the bonded surface on the side of the glass.Type: GrantFiled: February 26, 2004Date of Patent: December 26, 2006Assignee: Hitachi, Ltd.Inventors: Shohei Hata, Hideo Sotokawa, Hiroaki Furuichi
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Publication number: 20060237231Abstract: The present invention is characterized by a structure having a substrate 1, and metallization layers 2 formed on the substrate 1, on which a Sn solder film 3 and an Ag film 4 are formed. The Ag film 4 is a metal free from oxidization at room temperature in the atmosphere. In a wet process, since only an exposed side of the Sn solder film 3 is oxidized by the cell reaction of Ag and Sn, an upper surface of the Ag film 4 on the solder film, which would otherwise affect the connection, is not oxidized. Since the Ag film 4 melts into the Sn solder simultaneously with melting of the Sn solder film 3, the Ag film 4 does not hinder the connection.Type: ApplicationFiled: March 20, 2006Publication date: October 26, 2006Inventors: Shohei Hata, Naoki Matsushima, Takeru Fujinaga
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Patent number: 6937406Abstract: The present invention provides an optical module and a method for manufacturing the optical module, in which a V-shaped or trapezoidal groove having a first slope and a second slope facing to the first slope is formed at the surface of a silicon substrate by anisotropic etching, an adhesive is applied to a portion of at least the second slope in a region except the first slope of the groove, and lens is fixedly put in the groove.Type: GrantFiled: August 22, 2003Date of Patent: August 30, 2005Assignee: OpNext Japan, Inc.Inventors: Naoki Matsushima, Hideo Sotokawa, Hideyuki Kuwano, Yoshiaki Niwa, Keiichi Yamada, Masahiro Hirai, Kazumi Kawamoto, Shohei Hata, Toshiaki Takai
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Patent number: 6912363Abstract: An optical module for use in detecting a plurality of different wavelengths by making use of the multiple wavelength selectivity of an etalon. The optical module includes a semiconductor laser, a lens for converting a beam emitted from the semiconductor laser into a substantially parallel beam, a beam splitter for splitting the converted beam into a reflected beam and a transmitted beam, and a light-receiving element disposed such that one of the split beams is incident thereupon through an etalon, wherein a center of the reflected beam from the etalon occurring as the beam is incident upon the etalon is arranged to return to a region other than a beam-emitting portion of the semiconductor laser.Type: GrantFiled: July 31, 2001Date of Patent: June 28, 2005Assignee: OpNext Japan, Inc.Inventors: Hiroaki Furuichi, Kazumi Kawamoto, Katsumi Kuroguchi, Atsuhiro Yamamoto, Keiichi Yamada, Tsutomu Okumura, Kazuo Takai, Shohei Hata
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Publication number: 20040240087Abstract: The present invention provides an optical module and a method for manufacturing the optical module, in which a V-shaped or trapezoidal groove having a first slope and a second slope facing to the first slope is formed at the surface of a silicon substrate by anisotropic etching, an adhesive is applied to a portion of at least the second slope in a region except the first slope of the groove, and lens is fixedly put in the groove.Type: ApplicationFiled: August 22, 2003Publication date: December 2, 2004Applicant: OpNext Japan, Inc.Inventors: Naoki Matsushima, Hideo Sotokawa, Hideyuki Kuwano, Yoshiaki Niwa, Keiichi Yamada, Masahiro Hirai, Kazumi Kawamoto, Shohei Hata, Toshiaki Takai
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Publication number: 20040197949Abstract: In anodic bonding between a conductor or semiconductor and glass, in order to attain good adhesion at a lower bonding temperature than usual and improve the toughness at its boundary to obtain higher reliability for a bonded portion even in a case where bonded members are warped or dust is present at the bonding boundary, a soft metal film is formed on the surface of a conductor or semiconductor on which an active metal film having high reactivity with oxygen is formed, whereby a warp or dust, if any, can be absorbed by the deformation of the soft metal film, thereby to improve the adhesion at the boundary. Adhesion at the bonding boundary is improved even at a low bonding temperature of, e.g., about 200° C. Further, the toughness at the bonding boundary can be improved to increase reliability by roughening the bonded surface on the side of the glass.Type: ApplicationFiled: February 26, 2004Publication date: October 7, 2004Inventors: Shohei Hata, Hideo Sotokawa, Hiroaki Furuichi
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Publication number: 20030076564Abstract: An optical module for use in detecting a plurality of different wavelengths by making use of the multiple wavelength selectivity of an etalon. The optical module includes a semiconductor laser, a lens for converting a beam emitted from the semiconductor laser into a substantially parallel beam, a beam splitter for splitting the converted beam into a reflected beam and a transmitted beam, and a light-receiving element disposed such that one of the split beams is incident thereupon through an etalon, wherein a center of the reflected beam from the etalon occurring as the beam is incident upon the etalon is arranged to return to a region other than a beam-emitting portion of the semiconductor laser.Type: ApplicationFiled: July 31, 2001Publication date: April 24, 2003Inventors: Hiroaki Furuichi, Kazumi Kawamoto, Katsumi Kuroguchi, Atsuhiro Yamamoto, Keiichi Yamada, Tsutomu Okumura, Kazuo Takai, Shohei Hata