Patents by Inventor Shohei Ogawa
Shohei Ogawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240103157Abstract: A method for installing a radio wave sensor configured to radiate a radio wave to a range including a target area that is set for detection of an object. The method includes: a step of installing a reference object; and a step of adjusting a radio wave radiation direction of the radio wave sensor, using the reference object as a reference. The reference object is installed at a first position outside the target area.Type: ApplicationFiled: September 7, 2020Publication date: March 28, 2024Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Nobuo HIGASHIDA, Shohei OGAWA
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Publication number: 20240085316Abstract: A food selection method includes obtaining one or more spectra corresponding to each of one or more foods, the one or more spectra being a result of measurement of each of the one or more foods using a spectral camera, comparing desire information indicating an attribute of a food desired by a user and a state of each of the one or more foods based on the one or more spectra, and selecting a food that suits the user's desire on a basis of a result of the comparing.Type: ApplicationFiled: November 21, 2023Publication date: March 14, 2024Inventors: Shohei OGAWA, Naomi TOMIYAMA
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Semiconductor device with branch electrode terminal and method of manufacturing semiconductor device
Patent number: 11901326Abstract: An object is to provide a semiconductor device which suppresses poor bonding between a metal pattern and an electrode terminal due to insufficient temperature rise at the time of bonding the metal pattern and the electrode terminal. The electrode terminal is branched into a plurality of branch portions in a width direction on one end side of an extending direction thereof, of the plurality of branch portions, a first branch portion and a second branch portion are bonded on the metal pattern via a bonding material, respectively, the first branch portion has a wider width than that of the second branch portion, and the bonding material between the second branch portion and the metal pattern is thinner than the bonding material between the first branch portion and the metal pattern.Type: GrantFiled: December 9, 2021Date of Patent: February 13, 2024Assignee: Mitsubishi Electric CorporationInventors: Shinsuke Asada, Satoru Ishikawa, Yuki Yano, Shohei Ogawa, Kiyoshi Arai -
Patent number: 11860086Abstract: A food selection method includes obtaining one or more spectra corresponding to each of one or more foods, the one or more spectra being a result of measurement of each of the one or more foods using a spectral camera, comparing desire information indicating an attribute of a food desired by a user and a state of each of the one or more foods based on the one or more spectra, and selecting a food that suits the user's desire on a basis of a result of the comparing.Type: GrantFiled: December 6, 2021Date of Patent: January 2, 2024Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Shohei Ogawa, Naomi Tomiyama
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Publication number: 20230417905Abstract: A radar antenna of the disclosure is a radar antenna unit including a receiving antenna configured to receive a reflected wave of a radar wave. The receiving antenna includes a plurality of receiving antenna elements arranged at an interval so as to form a row along a first direction. The plurality of receiving antenna elements include a first end antenna element positioned at a first end of the row, a second end antenna element positioned at a second end of the row, and a plurality of intermediate antenna elements positioned between the first end antenna element and the second end antenna element. Of a plurality of the intervals between the plurality of receiving antenna elements, at least one interval differs from other interval. The plurality of receiving antenna elements are disposed such that PL+PR?PAVG×2 holds. PAVG is from 0.8 ?0 to 1.2 ?0. PL is a first end interval.Type: ApplicationFiled: November 18, 2021Publication date: December 28, 2023Applicant: Sumitomo Electric Industries, Ltd.Inventors: Yutaro MIKI, Suguru YAMAGISHI, Takanori FUKUNAGA, Ichiro KUWAYAMA, Hideaki SHIRANAGA, Nobuo HIGASHIDA, Eiji MOCHIDA, Shohei OGAWA, Yusuke YAHATA
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Patent number: 11804414Abstract: An object is to provide a semiconductor device in which heat generated in a lead electrode when conducting a large current can be reduced and the bonding quality between the lead electrode and a semiconductor element can be inspected easily. A semiconductor device includes: a base portion; a semiconductor element mounted on the base portion; a metal part erect with respect to the semiconductor element and having one end bonded, with a bonding material, to a principal surface of the semiconductor element opposite to another principal surface of the semiconductor element mounted on the base portion; and a lead electrode connected to the semiconductor element through the metal part. The lead electrode includes a through hole extending in a thickness direction. The metal part connects the semiconductor element to the lead electrode, while inserted into the through hole of the lead electrode together with a part of the bonding material.Type: GrantFiled: January 4, 2022Date of Patent: October 31, 2023Assignee: Mitsubishi Electric CorporationInventors: Kazuhisa Osada, Yuki Yano, Satoru Ishikawa, Shohei Ogawa
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Patent number: 11557531Abstract: A semiconductor device includes: a substrate; a semiconductor element arranged on the substrate; a plate-like member electrically connected to the semiconductor element; a first electrode formed on the semiconductor element and joined to the plate-like member with solder; a second electrode formed on the semiconductor element and spaced from the first electrode, and including a metal capable of forming an alloy with the solder; and a metal film formed on the semiconductor element and spaced from the second electrode in a region on the first electrode side as seen from the second electrode, in a two-dimensional view of the semiconductor element as seen from the plate-like member, and including a metal capable of forming an alloy with the solder.Type: GrantFiled: September 24, 2019Date of Patent: January 17, 2023Assignee: MITSUBISHI ELECTRIC CORPORATIONInventors: Shohei Ogawa, Junji Fujino, Yusuke Ishiyama, Isao Oshima, Takumi Shigemoto
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Publication number: 20220398850Abstract: An information generation device includes: a measurement unit configured to obtain a plurality of measurement results by performing a measurement of a vehicle size with respect to a same traveling vehicle a plurality of times; a detection unit configured to detect an accuracy of each of the plurality of measurement results; and a determination unit configured to determine a vehicle size of the traveling vehicle from the plurality of measurement results on the basis of the accuracies.Type: ApplicationFiled: November 15, 2019Publication date: December 15, 2022Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Shohei OGAWA, Kyohiro YOSHIDA
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Publication number: 20220310463Abstract: An object is to provide a semiconductor device in which heat generated in a lead electrode when conducting a large current can be reduced and the bonding quality between the lead electrode and a semiconductor element can be inspected easily. A semiconductor device includes: a base portion; a semiconductor element mounted on the base portion; a metal part erect with respect to the semiconductor element and having one end bonded, with a bonding material, to a principal surface of the semiconductor element opposite to another principal surface of the semiconductor element mounted on the base portion; and a lead electrode connected to the semiconductor element through the metal part. The lead electrode includes a through hole extending in a thickness direction. The metal part connects the semiconductor element to the lead electrode, while inserted into the through hole of the lead electrode together with a part of the bonding material.Type: ApplicationFiled: January 4, 2022Publication date: September 29, 2022Applicant: Mitsubishi Electric CorporationInventors: Kazuhisa OSADA, Yuki YANO, Satoru ISHIKAWA, Shohei OGAWA
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Publication number: 20220254749Abstract: An object is to provide a semiconductor device which suppresses poor bonding between a metal pattern and an electrode terminal due to insufficient temperature rise at the time of bonding the metal pattern and the electrode terminal. The electrode terminal is branched into a plurality of branch portions in a width direction on one end side of an extending direction thereof, of the plurality of branch portions, a first branch portion and a second branch portion are bonded on the metal pattern via a bonding material, respectively, the first branch portion has a wider width than that of the second branch portion, and the bonding material between the second branch portion and the metal pattern is thinner than the bonding material between the first branch portion and the metal pattern.Type: ApplicationFiled: December 9, 2021Publication date: August 11, 2022Applicant: Mitsubishi Electric CorporationInventors: Shinsuke ASADA, Satoru ISHIKAWA, Yuki YANO, Shohei OGAWA, Kiyoshi ARAI
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Patent number: 11398447Abstract: A semiconductor device includes an insulating substrate formed by integrating a ceramic base plate and a cooling fin; a multiple of plate interconnection members; and a plurality of semiconductor elements. The one faces of the semiconductor elements are bonded to the ceramic base plate of the insulating substrate with a chip-bottom solder, and the other faces thereof are bonded to the plate-interconnection members with a chip-top solder so that plate interconnection members correspond respectively to the semiconductor elements. The chip-bottom solder and the chip-top solder both contain mainly Sn and 0.3-3 wt. % Ag and 0.5-1 wt. % Cu. This allows the semiconductor device to be reduced in size without impairing heat dissipation.Type: GrantFiled: November 29, 2018Date of Patent: July 26, 2022Assignee: MITSUBISHI ELECTRIC CORPORATIONInventors: Shohei Ogawa, Junji Fujino, Satoru Ishikawa, Takumi Shigemoto, Yusuke Ishiyama
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Publication number: 20220091024Abstract: A food selection method includes obtaining one or more spectra corresponding to each of one or more foods, the one or more spectra being a result of measurement of each of the one or more foods using a spectral camera, comparing desire information indicating an attribute of a food desired by a user and a state of each of the one or more foods based on the one or more spectra, and selecting a food that suits the user's desire on a basis of a result of the comparing.Type: ApplicationFiled: December 6, 2021Publication date: March 24, 2022Inventors: SHOHEI OGAWA, NAOMI TOMIYAMA
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Patent number: 11244922Abstract: Provided is a semiconductor device stabilizing bond properties between an electrode terminal provided on a case and an internal wiring connected to a semiconductor element. A semiconductor device includes a base part, a semiconductor element, an electrode terminal, an insulating block, and an internal wiring. The semiconductor element is mounted on the base part. The electrode terminal is held by a case surrounding an outer periphery of the semiconductor element. An end portion of the electrode terminal protrudes toward an inner side of the case. The insulating block is provided on the base part between the semiconductor element and the case. In the internal wiring, one end portion is bonded to the end portion of the electrode terminal on the insulating block, and part of a region extending from the one end portion to the other end portion is bonded to the semiconductor element.Type: GrantFiled: May 28, 2020Date of Patent: February 8, 2022Assignee: Mitsubishi Electric CorporationInventors: Takumi Shigemoto, Shohei Ogawa
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Patent number: 11183479Abstract: In a method for manufacturing a semiconductor device, a plurality of first provisional fixing portions are supplied on a front surface of a substrate such that the plurality of first provisional fixing portions are spaced from each other and thus dispersed. A first solder layer processed into a plate to be a first soldering portion is disposed in contact with the plurality of first provisional fixing portions. A semiconductor chip is disposed on the first solder layer. In addition a conductive member in the form of a flat plate is disposed thereon via a second provisional fixing portion and a second solder layer. A reflow process is performed to solder the substrate, the semiconductor chip and the conductive member together.Type: GrantFiled: March 29, 2018Date of Patent: November 23, 2021Assignee: MITSUBISHI ELECTRIC CORPORATIONInventors: Shohei Ogawa, Junji Fujino, Isao Oshima, Satoru Ishikawa, Takumi Shigemoto
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Publication number: 20210313253Abstract: A semiconductor device includes: a substrate; a semiconductor element arranged on the substrate; a plate-like member electrically connected to the semiconductor element; a first electrode formed on the semiconductor element and joined to the plate-like member with solder; a second electrode formed on the semiconductor element and spaced from the first electrode, and including a metal capable of forming an alloy with the solder; and a metal film formed on the semiconductor element and spaced from the second electrode in a region on the first electrode side as seen from the second electrode, in a two-dimensional view of the semiconductor element as seen from the plate-like member, and including a metal capable of forming an alloy with the solder.Type: ApplicationFiled: September 24, 2019Publication date: October 7, 2021Applicant: Mitsubishi Electric CorporationInventors: Shohei OGAWA, Junji FUJINO, Yusuke ISHIYAMA, Isao OSHIMA, Takumi SHIGEMOTO
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Publication number: 20210193611Abstract: A semiconductor device includes an insulating substrate formed by integrating a ceramic base plate and a cooling fin; a multiple of plate interconnection members; and a plurality of semiconductor elements. The one faces of the semiconductor elements are bonded to the ceramic base plate of the insulating substrate with a chip-bottom solder, and the other faces thereof are bonded to the plate-interconnection members with a chip-top solder so that plate interconnection members correspond respectively to the semiconductor elements. The chip-bottom solder and the chip-top solder both contain mainly Sn and 0.3-3 wt. % Ag and 0.5-1 wt. % Cu. This allows the semiconductor device to be reduced in size without impairing heat dissipation.Type: ApplicationFiled: November 29, 2018Publication date: June 24, 2021Applicant: Mitsubishi Electric CorporationInventors: Shohei OGAWA, Junji FUJINO, Satoru ISHIKAWA, Takumi SHIGEMOTO, Yusuke ISHIYAMA
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Patent number: 10978366Abstract: An object is to provide a power module in which adhesion of a sealing resin is sufficient and which is highly reliable. The power module includes: an insulative board in which a pattern of a conductor layer is formed on a ceramic plate; power semiconductor elements placed on the insulative board; lead frames each in a plate shape connecting from electrodes of the power semiconductor elements to screw-fastening terminal portions; and a sealing resin portion that seals connection portions between the power semiconductor elements and the lead frames, and regions around the connection portions; wherein, in the lead frames, opening portions are formed at positions where each of the lead frames at least partly overlaps, in planar view, with a portion of the insulative board on which the conductor layer is not formed.Type: GrantFiled: April 27, 2018Date of Patent: April 13, 2021Assignee: MITSUBISHI ELECTRIC CORPORATIONInventors: Junji Fujino, Yuji Imoto, Shohei Ogawa, Mikio Ishihara
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Publication number: 20210043598Abstract: Provided is a semiconductor device stabilizing bond properties between an electrode terminal provided on a case and an internal wiring connected to a semiconductor element. A semiconductor device includes a base part, a semiconductor element, an electrode terminal, an insulating block, and an internal wiring. The semiconductor element is mounted on the base part. The electrode terminal is held by a case surrounding an outer periphery of the semiconductor element. An end portion of the electrode terminal protrudes toward an inner side of the case. The insulating block is provided on the base part between the semiconductor element and the case. In the internal wiring, one end portion is bonded to the end portion of the electrode terminal on the insulating block, and part of a region extending from the one end portion to the other end portion is bonded to the semiconductor element.Type: ApplicationFiled: May 28, 2020Publication date: February 11, 2021Applicant: Mitsubishi Electric CorporationInventors: Takumi SHIGEMOTO, Shohei OGAWA
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Patent number: 10727163Abstract: A semiconductor device includes a semiconductor element having a front electrode, an electrode plate having an area larger than the front electrode of the semiconductor element in a two-dimensional view and made of aluminum or aluminum alloy, and a metal member having a joint surface joined to the front electrode of the semiconductor element with solder, having an area smaller than the front electrode of the semiconductor element in a two-dimensional view, made of a metal different from the electrode plate, and fastened to the electrode plate to electrically connect the front electrode of the semiconductor element to the electrode plate.Type: GrantFiled: July 25, 2017Date of Patent: July 28, 2020Assignee: MITSUBISHI ELECTRIC CORPORATIONInventors: Junji Fujino, Yuji Imoto, Shohei Ogawa, Mikio Ishihara
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Publication number: 20200083129Abstract: An object is to provide a power module in which adhesion of a sealing resin is sufficient and which is highly reliable. The power module includes: an insulative board in which a pattern of a conductor layer is formed on a ceramic plate; power semiconductor elements placed on the insulative board; lead frames each in a plate shape connecting from electrodes of the power semiconductor elements to screw-fastening terminal portions; and a sealing resin portion that seals connection portions between the power semiconductor elements and the lead frames, and regions around the connection portions; wherein, in the lead frames, opening portions are formed at positions where each of the lead frames at least partly overlaps, in planar view, with a portion of the insulative board on which the conductor layer is not formed.Type: ApplicationFiled: April 27, 2018Publication date: March 12, 2020Applicant: MITSUBISHI ELECTRIC CORPORATIONInventors: Junji FUJINO, Yuji IMOTO, Shohei OGAWA, Mikio ISHIHARA