Patents by Inventor Shohei SHIMADA
Shohei SHIMADA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240121529Abstract: To provide a solid-state imaging device and an electronic apparatus capable of achieving both of a high dynamic range operation and an auto focus operation in a pixel configuration in which a plurality of unit pixels includes two or more subpixels. There is provided a solid-state imaging device including: a first pixel separation region that separates a plurality of unit pixels including two or more subpixels; a second pixel separation region that separates each of the plurality of unit pixels separated by the first pixel separation region; and an overflow region that causes signal charges accumulated in the subpixels to overflow to at least one of adjacent subpixels, in which the overflow region is formed between a first subpixel and a second subpixel.Type: ApplicationFiled: December 19, 2023Publication date: April 11, 2024Inventors: HIROFUMI YAMASHITA, SHOHEI SHIMADA, YUSUKE OTAKE, YUSUKE TANAKA, TOSHIFUMI WAKANO
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Patent number: 11937002Abstract: Provided is a solid-state imaging device and an electronic apparatus capable of achieving both of a high dynamic range operation and an auto focus operation in a pixel configuration in which a plurality of unit pixels includes two or more subpixels. The solid-state imaging device includes a first pixel separation region that separates a plurality of unit pixels including two or more subpixels, a second pixel separation region that separates each of the plurality of unit pixels separated by the first pixel separation region and an overflow region that causes signal charges accumulated in the subpixels to overflow to at least one of adjacent subpixels, in which the overflow region is formed between a first subpixel and a second subpixel.Type: GrantFiled: November 8, 2022Date of Patent: March 19, 2024Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Hirofumi Yamashita, Shohei Shimada, Yusuke Otake, Yusuke Tanaka, Toshifumi Wakano
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Publication number: 20240072192Abstract: Provided is an optical detection device capable of suppressing a fluctuation of a drive starting voltage in a pixel. The optical detection device according to the present disclosure includes: a semiconductor substrate that has a first surface as a light incident surface and a second surface on an opposite side to the light incident surface; a first pixel that is in the semiconductor substrate and has an avalanche amplification region including a first conductive region and a second conductive region; a pixel isolation portion that isolates the first pixel from an adjacent pixel; a first insulation film that is provided on the second surface side and in contact with the pixel isolation portion; and a second insulation film that is provided between the first insulation film and the avalanche amplification region, in which a film thickness of the second insulation film is larger than the film thickness of the first insulation film.Type: ApplicationFiled: January 5, 2022Publication date: February 29, 2024Inventors: Yuma Jibiki, Shohei Shimada, Yusuke Otake
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Patent number: 11916093Abstract: The present technology relates to a solid-state imaging device, a driving method therefor, and an electronic apparatus capable of acquiring a signal to detect phase difference and a signal to generate a high dynamic range image at the same time. The solid-state imaging device includes a pixel array unit in which a plurality of pixels that receives light of a same color is arranged under one on-chip lens. The plurality of pixels uses at least one pixel transistor in a sharing manner, some pixels out of the plurality of pixels are set to have a first exposure time, and other pixels are set to have a second exposure time shorter than the first exposure time. The present technology can be applied to, for example, a solid-state imaging device or the like.Type: GrantFiled: November 12, 2021Date of Patent: February 27, 2024Assignee: SONY GROUP CORPORATIONInventors: Akira Tanaka, Shohei Shimada
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Publication number: 20240047502Abstract: The present technology relates to a solid-state imaging device, a driving method therefor, and an electronic apparatus capable of acquiring a signal to detect phase difference and a signal to generate a high dynamic range image at the same time. The solid-state imaging device includes a pixel array unit in which a plurality of pixels that receives light of a same color is arranged under one on-chip lens. The plurality of pixels uses at least one pixel transistor in a sharing manner, some pixels out of the plurality of pixels are set to have a first exposure time, and other pixels are set to have a second exposure time shorter than the first exposure time. The present technology can be applied to, for example, a solid-state imaging device or the like.Type: ApplicationFiled: October 13, 2023Publication date: February 8, 2024Applicant: SONY GROUP CORPORATIONInventors: Akira TANAKA, Shohei SHIMADA
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Publication number: 20240038791Abstract: The present technology relates to a solid-state imaging device and an electronic apparatus capable of improving the accuracy of phase difference detection while suppressing degradation of a picked-up image. There is provided a solid-state imaging device including: a pixel array unit, a plurality of pixels being two-dimensionally arranged in the pixel array unit, a plurality of photoelectric conversion devices being formed with respect to one on-chip lens in each of the plurality of pixels, a part of at least one of an inter-pixel separation unit formed between the plurality of pixels and an inter-pixel light blocking unit formed between the plurality of pixels protruding toward a center of the corresponding pixel in a projecting shape to form a projection portion. The present technology is applicable to, for example, a CMOS image sensor including a pixel for detecting the phase difference.Type: ApplicationFiled: October 10, 2023Publication date: February 1, 2024Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Shouichirou SHIRAISHI, Takuya MARUYAMA, Shinichiro YAGI, Shohei SHIMADA, Shinya SATO
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Patent number: 11888001Abstract: The present technology relates to a solid-state imaging device and an electronic apparatus capable of improving the accuracy of phase difference detection while suppressing degradation of a picked-up image. There is provided a solid-state imaging device including: a pixel array unit, a plurality of pixels being two-dimensionally arranged in the pixel array unit, a plurality of photoelectric conversion devices being formed with respect to one on-chip lens in each of the plurality of pixels, a part of at least one of an inter-pixel separation unit formed between the plurality of pixels and an inter-pixel light blocking unit formed between the plurality of pixels protruding toward a center of the corresponding pixel in a projecting shape to form a projection portion. The present technology is applicable to, for example, a CMOS image sensor including a pixel for detecting the phase difference.Type: GrantFiled: March 31, 2023Date of Patent: January 30, 2024Assignee: Sony Semiconductor Solutions CorporationInventors: Shouichirou Shiraishi, Takuya Maruyama, Shinichiro Yagi, Shohei Shimada, Shinya Sato
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Publication number: 20230268365Abstract: The present disclosure relates to a light reception element and an electronic device that make it possible to achieve better performance. Provided is a SPAD element including an avalanche multiplication region provided at a junction surface between an N-type diffusion layer and a P-type diffusion layer provided on a side of a sensor substrate opposite from a light reception surface of the sensor substrate, a hole accumulation layer provided so as to surround a lateral surface and a light reception surface of a well provided in the sensor substrate, a pinning layer provided outside the hole accumulation layer, and an in-pixel trench structure provided in a pixel region, the pinning layer being formed all over an outer peripheral surface of the in-pixel trench structure. The present technology is applicable to, for example, a distance image sensor that performs time-of-flight (ToF)-based distance measurement.Type: ApplicationFiled: July 7, 2021Publication date: August 24, 2023Inventors: Kenji Kurata, Yusuke Otake, Shohei Shimada
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Publication number: 20230238404Abstract: There is provided a solid-state imaging device including: a pixel array unit, a plurality of pixels being two-dimensionally arranged in the pixel array unit, a plurality of photoelectric conversion devices being formed with respect to one on-chip lens in each of the plurality of pixels, a part of at least one of an inter-pixel separation unit formed between the plurality of pixels and an inter-pixel light blocking unit formed between the plurality of pixels protruding toward a center of the corresponding pixel in a projecting shape to form a projection portion.Type: ApplicationFiled: March 31, 2023Publication date: July 27, 2023Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Shouichirou SHIRAISHI, Takuya MARUYAMA, Shinichiro YAGI, Shohei SHIMADA, Shinya SATO
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Publication number: 20230238405Abstract: Provided is a semiconductor device capable of achieving high detection efficiency and low jitter without depending on an increase in thickness of a substrate. A semiconductor device is provided with a plurality of pixels in each of which an avalanche photodiode element that photoelectrically converts incident light is formed, and each of the plurality of pixels is provided with a substrate including a first semiconductor material, and a stacked portion stacked on a surface on a light incident side of the substrate and including a second semiconductor material different from the first semiconductor material.Type: ApplicationFiled: May 7, 2021Publication date: July 27, 2023Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Shohei SHIMADA, Yusuke OTAKE, Toshifumi WAKANO
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Patent number: 11688747Abstract: There is provided a solid-state imaging device including: a pixel array unit, a plurality of pixels being two-dimensionally arranged in the pixel array unit, a plurality of photoelectric conversion devices being formed with respect to one on-chip lens in each of the plurality of pixels, a part of at least one of an inter-pixel separation unit formed between the plurality of pixels and an inter-pixel light blocking unit formed between the plurality of pixels protruding toward a center of the corresponding pixel in a projecting shape to form a projection portion.Type: GrantFiled: June 22, 2021Date of Patent: June 27, 2023Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Shouichirou Shiraishi, Takuya Maruyama, Shinichiro Yagi, Shohei Shimada, Shinya Sato
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Publication number: 20230112018Abstract: In a solid-state imaging element that measures a distance on the basis of a light receiving timing of reflected light, the shortest distance that can be measured is shortened. A photoelectric conversion region generates charges through photoelectric conversion. A multiplication region multiplies the generated charges. An output electrode outputs the multiplied charges. A detection circuit detects the presence or absence of photons contained in reflected light with respect to radiation light on the basis of the charges output from the output electrode. An additional electrode discharges the charges from the photoelectric conversion region in a case where a predetermined potential is applied to the additional electrode. A control circuit applies the predetermined potential to the additional electrode at a radiation timing when the radiation light is radiated.Type: ApplicationFiled: December 15, 2020Publication date: April 13, 2023Inventors: YASUNORI TSUKUDA, KYOSUKE ITO, SHOHEI SHIMADA
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Publication number: 20230067160Abstract: To provide a solid-state imaging device and an electronic apparatus capable of achieving both of a high dynamic range operation and an auto focus operation in a pixel configuration in which a plurality of unit pixels includes two or more subpixels. There is provided a solid-state imaging device including: a first pixel separation region that separates a plurality of unit pixels including two or more subpixels; a second pixel separation region that separates each of the plurality of unit pixels separated by the first pixel separation region; and an overflow region that causes signal charges accumulated in the subpixels to overflow to at least one of adjacent subpixels, in which the overflow region is formed between a first subpixel and a second subpixel.Type: ApplicationFiled: November 8, 2022Publication date: March 2, 2023Inventors: HIROFUMI YAMASHITA, SHOHEI SHIMADA, YUSUKE OTAKE, YUSUKE TANAKA, TOSHIFUMI WAKANO
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Patent number: 11523078Abstract: Provided is a solid-state imaging device and an electronic apparatus capable of achieving both of a high dynamic range operation and an auto focus operation in a pixel configuration in which a plurality of unit pixels includes two or more subpixels. The solid-state imaging device includes a first pixel separation region that separates a plurality of unit pixels including two or more subpixels, a second pixel separation region that separates each of the plurality of unit pixels separated by the first pixel separation region and an overflow region that causes signal charges accumulated in the subpixels to overflow to at least one of adjacent subpixels, in which the overflow region is formed between a first subpixel and a second subpixel.Type: GrantFiled: July 8, 2019Date of Patent: December 6, 2022Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Hirofumi Yamashita, Shohei Shimada, Yusuke Otake, Yusuke Tanaka, Toshifumi Wakano
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Publication number: 20220199668Abstract: The present technology relates to a solid-state imaging device capable of increasing sensitivity while reducing color mixing degradation. A solid-state imaging device includes: a substrate; a plurality of photoelectric conversion regions formed in the substrate; a trench that is formed between the photoelectric conversion regions, and penetrates the substrate; and a recessed region that includes a plurality of concave portions, and is provided above the photoelectric conversion regions and on the side of the light receiving surface of the substrate, in which the substrate includes a III-V semiconductor or polycrystalline SiXGe (1-x) (x=0 to 1). The recessed region is also provided below the photoelectric conversion regions and on the side of a surface of the substrate, the surface facing the light receiving surface. The present technology can be applied to back-illuminated solid-state imaging devices and the like, for example.Type: ApplicationFiled: March 27, 2020Publication date: June 23, 2022Inventors: NATSUKO OOTANI, MIKINORI ITO, TAKASHI TANAKA, MASUMI ABE, SHOHEI SHIMADA
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Publication number: 20220077220Abstract: The present technology relates to a solid-state imaging device, a driving method therefor, and an electronic apparatus capable of acquiring a signal to detect phase difference and a signal to generate a high dynamic range image at the same time. The solid-state imaging device includes a pixel array unit in which a plurality of pixels that receives light of a same color is arranged under one on-chip lens. The plurality of pixels uses at least one pixel transistor in a sharing manner, some pixels out of the plurality of pixels are set to have a first exposure time, and other pixels are set to have a second exposure time shorter than the first exposure time. The present technology can be applied to, for example, a solid-state imaging device or the like.Type: ApplicationFiled: November 12, 2021Publication date: March 10, 2022Applicant: SONY GROUP CORPORATIONInventors: Akira TANAKA, Shohei SHIMADA
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Patent number: 11201186Abstract: The present technology relates to a solid-state imaging device, a driving method therefor, and an electronic apparatus capable of acquiring a signal to detect phase difference and a signal to generate a high dynamic range image at the same time. The solid-state imaging device includes a pixel array unit in which a plurality of pixels that receives light of a same color is arranged under one on-chip lens. The plurality of pixels uses at least one pixel transistor in a sharing manner, some pixels out of the plurality of pixels are set to have a first exposure time, and other pixels are set to have a second exposure time shorter than the first exposure time. The present technology can be applied to, for example, a solid-state imaging device or the like.Type: GrantFiled: January 6, 2017Date of Patent: December 14, 2021Assignee: Sony CorporationInventors: Akira Tanaka, Shohei Shimada
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Publication number: 20210313362Abstract: There is provided a solid-state imaging device including: a pixel array unit, a plurality of pixels being two-dimensionally arranged in the pixel array unit, a plurality of photoelectric conversion devices being formed with respect to one on-chip lens in each of the plurality of pixels, a part of at least one of an inter-pixel separation unit formed between the plurality of pixels and an inter-pixel light blocking unit formed between the plurality of pixels protruding toward a center of the corresponding pixel in a projecting shape to form a projection portion.Type: ApplicationFiled: June 22, 2021Publication date: October 7, 2021Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Shouichirou SHIRAISHI, Takuya MARUYAMA, Shinichiro YAGI, Shohei SHIMADA, Shinya SATO
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Patent number: 11075236Abstract: The present technology relates to a solid-state imaging device and an electronic apparatus capable of improving the accuracy of phase difference detection while suppressing degradation of a picked-up image. There is provided a solid-state imaging device including: a pixel array unit, a plurality of pixels being two-dimensionally arranged in the pixel array unit, a plurality of photoelectric conversion devices being formed with respect to one on-chip lens in each of the plurality of pixels, a part of at least one of an inter-pixel separation unit formed between the plurality of pixels and an inter-pixel light blocking unit formed between the plurality of pixels protruding toward a center of the corresponding pixel in a projecting shape to form a projection portion. The present technology is applicable to, for example, a CMOS image sensor including a pixel for detecting the phase difference.Type: GrantFiled: May 28, 2018Date of Patent: July 27, 2021Assignee: Sony Semiconductor Solutions CorporationInventors: Shouichirou Shiraishi, Takuya Maruyama, Shinichiro Yagi, Shohei Shimada, Shinya Sato
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Publication number: 20210144321Abstract: To provide a solid-state imaging device and an electronic apparatus capable of achieving both of a high dynamic range operation and an auto focus operation in a pixel configuration in which a plurality of unit pixels includes two or more subpixels. There is provided a solid-state imaging device including: a first pixel separation region that separates a plurality of unit pixels including two or more subpixels; a second pixel separation region that separates each of the plurality of unit pixels separated by the first pixel separation region; and an overflow region that causes signal charges accumulated in the subpixels to overflow to at least one of adjacent subpixels, in which the overflow region is formed between a first subpixel and a second subpixel.Type: ApplicationFiled: July 8, 2019Publication date: May 13, 2021Inventors: HIROFUMI YAMASHITA, SHOHEI SHIMADA, YUSUKE OTAKE, YUSUKE TANAKA, TOSHIFUMI WAKANO