Abstract: A semiconductor die includes a substrate having a semiconductor surface layer bon a front side with active circuitry including at last one transistor therein and a back side. The sidewall edges of the semiconductor die have at least one damage region pair including an angled damage feature region relative to a surface normal of the semiconductor die that is above a damage region that is more normal to the surface normal of the die as compared to the angled damage feature region.

Abstract: A semiconductor die includes a substrate having a semiconductor surface layer bon a front side with active circuitry including at last one transistor therein and a back side. The sidewall edges of the semiconductor die have at least one damage region pair including an angled damage feature region relative to a surface normal of the semiconductor die that is above a damage region that is more normal to the surface normal of the die as compared to the angled damage feature region.

Abstract: The following are disclosed: a method for producing a T cell progenitor, including step (1) of culturing CD34+ cell in a medium containing an aryl hydrocarbon receptor antagonist, a medium for T cell progenitor differentiation containing an aryl hydrocarbon receptor antagonist, and a T cell progenitor inducer containing an aryl hydrocarbon receptor antagonist.

Abstract: A method for producing CD4/CD8 double-positive T cells, comprising the steps of: (1) culturing pluripotent stem cells in a medium to induce hematopoietic progenitor cells; and (2) culturing the hematopoietic progenitor cells obtained in the step (1) in a medium containing a p38 inhibitor and/or SDF-1 to induce CD4/CD8 double-positive T cells.

Abstract: In a described example, a method includes: applying a dicing tape over a metal layer covering a portion of a surface of scribe streets on a device side of a semiconductor wafer that includes semiconductor device dies formed thereon separated from one another by the scribe streets; and placing the semiconductor wafer with the device side facing away from a laser in a stealth dicing machine. A power of a laser beam is adjusted to a first power level. The laser beam is focused through the non-device side of the semiconductor wafer to a first focal depth in the metal layer. The laser beam scans across the scribe streets and ablates the metal layer in the scribe streets. The method continues by singulating the semiconductor device dies using stealth dicing along the scribe streets in the stealth dicing machine.

Abstract: A subring for holding tape connected to semiconductor dies and spanning a passage in a frame having a first diameter includes a base. An opening extends through the base and has a second diameter at least as large as the first diameter. A projection extends from the base to ends positioned on opposite sides of the base. The projection is adapted to clamp the tape to the frame and adapted to prevent relative movement between the tape, the subring, and the frame.

Abstract: In a described example, a method includes: applying a dicing tape over a metal layer covering a portion of a surface of scribe streets on a device side of a semiconductor wafer that includes semiconductor device dies formed thereon separated from one another by the scribe streets; and placing the semiconductor wafer with the device side facing away from a laser in a stealth dicing machine. A power of a laser beam is adjusted to a first power level. The laser beam is focused through the non-device side of the semiconductor wafer to a first focal depth in the metal layer. The laser beam scans across the scribe streets and ablates the metal layer in the scribe streets. The method continues by singulating the semiconductor device dies using stealth dicing along the scribe streets in the stealth dicing machine.

Abstract: A method for backside metallization includes inkjet printing a pattern of nanosilver conductive ink on a first surface of a silicon wafer. The silicon wafer includes a plurality of dies. The pattern includes a clearance area along a scribe line between the dies. A laser is focused, through a second surface of the wafer, at a point between the first surface of the silicon wafer and the second surface of the silicon wafer. The second surface is opposite the first surface. The dies are separated along the scribe line.

Abstract: Disclosed is a method for detecting regulatory dendritic cells, the method comprising step a: detecting the presence or absence of one or more types of molecules on a cell surface in a cell population that comprises regulatory dendritic cells; and step b: identifying regulatory dendritic cells on the basis of the presence or absence of the one or more types of molecules. Also disclosed is a method for producing a cell population enriched for regulatory dendritic cells, the method comprising step 1: detecting the presence or absence of one or more types of molecules on a cell surface in a cell population that comprises regulatory dendritic cells; and step 2: obtaining a cell population enriched for regulatory dendritic cells on the basis of the presence or absence of the one or more types of molecules. Further disclosed is a cell population enriched for regulatory dendritic cells obtained by the method.

Abstract: A die matrix expander includes a subring including ?3 pieces, and a wafer frame supporting a dicing tape having an indentation for receiving pieces of the subring. The subring prior to expansion sits below a level of the wafer frame and has an outer diameter <an inner diameter of the wafer frame. A translation guide coupled to the subring driven by mechanical force applier moves the subring pieces in an angled path upwards and outwards for stretching the dicing tape including to a top most stretched position above the wafer frame that is over or outside the wafer frame. A cap placed on the pieces of the subring after being fully expanded over the dicing tape locks the dicing tape in the top most stretched position and secures the pieces of the expanded subring in place including when within the indentation during an additional expansion during a subsequent die pick operation.

Abstract: A subring for holding tape connected to semiconductor dies and spanning a passage in a frame having a first diameter includes a base. An opening extends through the base and has a second diameter at least as large as the first diameter. A projection extends from the base to ends positioned on opposite sides of the base. The projection is adapted to clamp the tape to the frame and adapted to prevent relative movement between the tape, the subring, and the frame.

Abstract: The present invention provides a method for producing a ??T cell from an induced pluripotent stem cell, wherein the induced pluripotent stem cell is derived from a cell other than an ??T cell.

Abstract: Provided is a method for producing a CD4/CD8 double positive cell, including the following steps: step 1: separating, from a cell population containing a hematopoietic progenitor cell, a cell expressing one or more kinds of molecules selected from the first group consisting of CD24, CD62L, CD90, CD143, CD263, Notch3, CD32, CD39, CD49a, CD164, CD317, CD200, CD218a, CD7, CD144, CD56, CD226, CD262 and CD325, and/or a cell not expressing one or more kinds of molecules selected from the second group consisting of CD49f, CD51, CD102, CD42b, CD61, CD62P, CD69, CD102 and CD156c, and step 2: differentiating the cell separated in step 1 into a CD4/CD8 double positive cell.

Abstract: A method for backside metallization includes inkjet printing a pattern of nanosilver conductive ink on a first surface of a silicon wafer. The silicon wafer includes a plurality of dies. The pattern includes a clearance area along a scribe line between the dies. A laser is focused, through a second surface of the wafer, at a point between the first surface of the silicon wafer and the second surface of the silicon wafer. The second surface is opposite the first surface. The dies are separated along the scribe line.

Abstract: A method for backside metallization includes inkjet printing a pattern of nanosilver conductive ink on a first surface of a silicon wafer. The silicon wafer includes a plurality of dies. The pattern includes a clearance area along a scribe line between the dies. A laser is focused, through a second surface of the wafer, at a point between the first surface of the silicon wafer and the second surface of the silicon wafer. The second surface is opposite the first surface. The dies are separated along the scribe line.

Abstract: A method for backside metallization includes inkjet printing a pattern of nanosilver conductive ink on a first surface of a silicon wafer. The silicon wafer includes a plurality of dies. The pattern includes a clearance area along a scribe line between the dies. A laser is focused, through a second surface of the wafer, at a point between the first surface of the silicon wafer and the second surface of the silicon wafer. The second surface is opposite the first surface. The dies are separated along the scribe line.

Abstract: A semiconductor die includes a substrate having a semiconductor surface layer bon a front side with active circuitry including at last one transistor therein and a back side. The sidewall edges of the semiconductor die have at least one damage region pair including an angled damage feature region relative to a surface normal of the semiconductor die that is above a damage region that is more normal to the surface normal of the die as compared to the angled damage feature region.

Abstract: In a described example, a method includes: forming stress induced dislocations along scribe lanes between semiconductor dies on a semiconductor wafer using a laser; mounting a first side of the semiconductor wafer on the first side of a first dicing tape; removing a backgrinding tape from the semiconductor wafer; attaching a second dicing tape to a second side of the semiconductor wafer opposite the first side, the second dicing tape adhering to portions of the first dicing tape that are spaced from the semiconductor wafer, forming a dual taped wafer dicing assembly; separating the semiconductor dies by stretching the first dicing tape and stretching the second dicing tape; removing the second dicing tape from the semiconductor dies; and removing the semiconductor dies from the first dicing tape.

Abstract: A subring for holding tape connected to semiconductor dies and spanning a passage in a frame having a first diameter includes a base. An opening extends through the base and has a second diameter at least as large as the first diameter. A projection extends from the base to ends positioned on opposite sides of the base. The projection is adapted to clamp the tape to the frame and adapted to prevent relative movement between the tape, the subring, and the frame.

Abstract: In a described example, a method includes: applying a dicing tape over a metal layer covering a portion of a surface of scribe streets on a device side of a semiconductor wafer that includes semiconductor device dies formed thereon separated from one another by the scribe streets; and placing the semiconductor wafer with the device side facing away from a laser in a stealth dicing machine. A power of a laser beam is adjusted to a first power level. The laser beam is focused through the non-device side of the semiconductor wafer to a first focal depth in the metal layer. The laser beam scans across the scribe streets and ablates the metal layer in the scribe streets. The method continues by singulating the semiconductor device dies using stealth dicing along the scribe streets in the stealth dicing machine.