Abstract: An optical receiver includes a converter that converts an optical signal into an electrical data signal, a controller that changes an adjustment value of peaking based on a baud rate of the optical signal, and an amplifier that changes a band characteristic of the converter based on the adjustment value changed by the controller.

Abstract: An optical transmit device includes a conversion device configured to convert an electrical data signal into an optical signal, a control unit configured to change an adjustment value for peaking based on a baud rate of the optical signal, and a driver configured to change a band characteristic of the conversion device based on the adjustment value changed by the control unit.

Abstract: An etching method includes etching a material in an etch chamber by alternating normal-flow etch steps and reduced-flow etch steps, where an etchant gas is provided at a normal flow rate into the etch chamber during the normal-flow etch steps, and the etchant gas is provided at a reduced flow rate lower than the normal flow rate into the etch chamber during the reduced-flow etch steps, obtaining optical emission spectroscopy (OES) data during the reduced-flow etch steps, determining an end point for the etching based on the obtained OES data, and ending the etching at the determined end point.

Abstract: An optical transmitter includes an electro-optic modulator, a monitor circuit that monitors output light of the electro-optic modulator, and a processor that controls a bias voltage of the electro-optic modulator using a monitoring result of the monitor circuit, wherein the processor superimposes a first dither signal with a first frequency and a second dither signal with a second frequency different from the first frequency, onto one bias voltage in a time sharing manner, calculates a first control error based on a first component oscillating at the first frequency and a second control error based on a second component oscillating at the second frequency based on the monitoring result, and determines a control value for controlling the bias voltage using the first control error and the second control error.

Abstract: A coherent transceiver includes a modulator, a receiver, a filter, a splitter, a detector, and a controller. The modulator modulates a data on the basis of laser light and outputs transmission light. The receiver receives reception light with same wavelength as the transmission light from input multiplexed light, on the basis of the laser light. The filter is arranged on an input stage of the receiver and includes a first port that inputs the multiplexed light, a filter body that transmits the reception light from the multiplexed light, and a second port that outputs the transmitted reception light. The splitter splits the transmission light travelling from the modulator and inputs the splitted transmission light. The detector detects a level of the splitted transmission light input. The controller adjusts a passband of the filter on the basis of the detected level.

Abstract: An optical transmitter includes an electro-optic modulator, a monitor circuit that monitors output light of the electro-optic modulator, and a processor that controls a bias voltage of the electro-optic modulator using a monitoring result of the monitor circuit, wherein the processor superimposes a first dither signal with a first frequency and a second dither signal with a second frequency different from the first frequency, onto one bias voltage in a time sharing manner, calculates a first control error based on a first component oscillating at the first frequency and a second control error based on a second component oscillating at the second frequency based on the monitoring result, and determines a control value for controlling the bias voltage using the first control error and the second control error.

Abstract: A deposition chamber includes a vacuum enclosure, an electrostatic chuck having a flat top surface located within a vacuum enclosure, a lift-and-rotation unit extending through or laterally surrounding the electrostatic chuck at a position that is laterally offset from a vertical axis passing through a geometrical center of the electrostatic chuck, a gas supply manifold configured to provide influx of gas into the vacuum enclosure, and a pumping port connected to the vacuum enclosure.

Abstract: A coherent transceiver includes a modulator, a receiver, a filter, a splitter, a detector, and a controller. The modulator modulates a data on the basis of laser light and outputs transmission light. The receiver receives reception light with same wavelength as the transmission light from input multiplexed light, on the basis of the laser light. The filter is arranged on an input stage of the receiver and includes a first port that inputs the multiplexed light, a filter body that transmits the reception light from the multiplexed light, and a second port that outputs the transmitted reception light. The splitter splits the transmission light travelling from the modulator and inputs the splitted transmission light. The detector detects a level of the splitted transmission light input. The controller adjusts a passband of the filter on the basis of the detected level.

Abstract: An apparatus includes an electrostatic chuck and located within a vacuum enclosure. A plurality of conductive plates can be embedded in the electrostatic chuck, and a plurality of plate bias circuits can be configured to independently electrically bias a respective one of the plurality of conductive plates. Alternatively or additionally, a plurality of spot lamp zones including a respective set of spot lamps can be provided between a bottom portion of the vacuum enclosure and a backside surface of the electrostatic chuck. The plurality of conductive plates and/or the plurality of spot lamp zones can be employed to locally modify chucking force and to provide local temperature control.

Abstract: An apparatus includes an electrostatic chuck and located within a vacuum enclosure. A plurality of conductive plates can be embedded in the electrostatic chuck, and a plurality of plate bias circuits can be configured to independently electrically bias a respective one of the plurality of conductive plates. Alternatively or additionally, a plurality of spot lamp zones including a respective set of spot lamps can be provided between a bottom portion of the vacuum enclosure and a backside surface of the electrostatic chuck. The plurality of conductive plates and/or the plurality of spot lamp zones can be employed to locally modify chucking force and to provide local temperature control.

Abstract: An optical apparatus includes an attenuator, a photoelectric convertor, an amplifier, and a processor. the attenuator attenuates signal light. The photoelectric convertor converts the signal light attenuated by the attenuator into an electric signal. The amplifier adjusts a gain of the electric signal. The processor detects a monitor value of a target channel from an output signal of the amplifier, calculates a power value of the target channel from the detected monitor value, calculates a difference value between the power value and a target power value, calculates a attenuation amount by adding a current attenuation amount, which is currently set to the attenuator, to the difference value, controls the gain of the amplifier so that the difference value of the target channel is minimized when the set attenuation amount is less than zero, and sets the attenuation amount to the attenuator when the attenuation amount is zero or more.

Abstract: An optical apparatus includes an attenuator, a photoelectric convertor, an amplifier, and a processor. the attenuator attenuates signal light. The photoelectric convertor converts the signal light attenuated by the attenuator into an electric signal. The amplifier adjusts a gain of the electric signal. The processor detects a monitor value of a target channel from an output signal of the amplifier, calculates a power value of the target channel from the detected monitor value, calculates a difference value between the power value and a target power value, calculates a attenuation amount by adding a current attenuation amount, which is currently set to the attenuator, to the difference value, controls the gain of the amplifier so that the difference value of the target channel is minimized when the set attenuation amount is less than zero, and sets the attenuation amount to the attenuator when the attenuation amount is zero or more.

Abstract: An anisotropic etch apparatus contains an electrostatic chuck located in a vacuum enclosure and including a lower electrode, an upper electrode overlying the lower electrode and located in the vacuum enclosure, a main radio frequency (RF) power source configured to provide an RF bias voltage between the lower electrode and the upper electrode, and a plurality of conductive edge ring segments surrounding the electrostatic chuck and configured for at least one of independent vertical movement relative to the electrostatic chuck or for independently receiving a different RF bias voltage.

Abstract: An apparatus includes an electrostatic chuck and located within a vacuum enclosure. A plurality of conductive plates can be embedded in the electrostatic chuck, and a plurality of plate bias circuits can be configured to independently electrically bias a respective one of the plurality of conductive plates. Alternatively or additionally, a plurality of spot lamp zones including a respective set of spot lamps can be provided between a bottom portion of the vacuum enclosure and a backside surface of the electrostatic chuck. The plurality of conductive plates and/or the plurality of spot lamp zones can be employed to locally modify chucking force and to provide local temperature control.

Abstract: An apparatus includes an electrostatic chuck and located within a vacuum enclosure. A plurality of conductive plates can be embedded in the electrostatic chuck, and a plurality of plate bias circuits can be configured to independently electrically bias a respective one of the plurality of conductive plates. Alternatively or additionally, a plurality of spot lamp zones including a respective set of spot lamps can be provided between a bottom portion of the vacuum enclosure and a backside surface of the electrostatic chuck. The plurality of conductive plates and/or the plurality of spot lamp zones can be employed to locally modify chucking force and to provide local temperature control.

Abstract: A deposition chamber includes a vacuum enclosure, an electrostatic chuck having a flat top surface located within a vacuum enclosure, a lift-and-rotation unit extending through or laterally surrounding the electrostatic chuck at a position that is laterally offset from a vertical axis passing through a geometrical center of the electrostatic chuck, a gas supply manifold configured to provide influx of gas into the vacuum enclosure, and a pumping port connected to the vacuum enclosure.

Abstract: One object of the present invention is to provide a method for producing a silicon nitride film having a high hydrofluoric acid resistance, a high moisture resistance and an appropriate internal stress on a substrate of which the temperature is controlled at 250° C. or lower, the present invention provides a method for producing a silicon nitride film (30) by a plasma chemical vapor deposition method, wherein a processing gas obtained by adding a hydrogen reducing gas in a range of 200 to 2000 volumetric flow rate to an organosilane gas of 1 volumetric flow rate is used, a pressure in a process chamber (40) accommodating the substrate (20) is adjusted to be in a range of 35 to 400 Pa, and a density of high-frequency electric power applied to an electrode installed in the process chamber (40) is adjusted to be in a range of 0.2 to 3.5 W/cm2.

Abstract: A method of reducing carbon and/or hydrogen atom content ratio relative to contents of silicon atoms and nitrogen atoms in a silicon nitride film formed by a plasma CVD method using an organic silane as a material, and improving film quality such as electrical properties. A silicon nitride film is formed with the organic silane and at least one additive gas selected from a group consisting of hydrogen and ammonia by a plasma CVD method. The silicon nitride film has a carbon atom content ratio of less than 0.8 assuming that a sum of a silicon atom content and a nitrogen atom content in the silicon nitride film is 1. The silicon nitride film has improved properties such as reduced leakage current.

Abstract: One object of the present invention is to provide a method for producing a silicon nitride film having a high hydrofluoric acid resistance, a high moisture resistance and an appropriate internal stress on a substrate of which the temperature is controlled at 250° C. or lower, the present invention provides a method for producing a silicon nitride film (30) by a plasma chemical vapor deposition method, wherein a processing gas obtained by adding a hydrogen reducing gas in a range of 200 to 2000 volumetric flow rate to an organosilane gas of 1 volumetric flow rate is used, a pressure in a process chamber (40) accommodating the substrate (20) is adjusted to be in a range of 35 to 400 Pa, and a density of high-frequency electric power applied to an electrode installed in the process chamber (40) is adjusted to be in a range of 0.2 to 3.5 W/cm2.

Abstract: In a wavelength division multiplexing transmission system, a controller of a relay node of a post-stage notifies level decrease information to a transmission node, upon detecting a decrease in a level of a wavelength in a wavelength multiplex signal received from the transmission node of a pre-stage by the optical channel monitor of the transmission node. The controller of the transmission node of the pre-stage determines that a failure occurs in the wavelength of the transponder of the transmission node, upon detecting a decrease in the level of the wavelength in the wavelength multiplex signal transmitted to the relay node by the optical channel monitor of the transmission node and upon receiving the level decrease information for the wavelength from the relay node. Therefore, a wavelength channel failure in the transponder can be determined in a preferable manner.