Abstract: An optimization unit in an optical receiver divides a symbol region out of a plurality of symbol regions into which signal points that specifies symbol information included in an optical signal are classified, into a plurality of division regions from the symbol center coordinate of the symbol region. Moreover, the optimization unit accumulates the signal points of the symbol information for every division region in the symbol region. Furthermore, based on the accumulated number of signal points for every division region, the optimization unit controls the average length of a phase estimation unit when the phase noise of the optical signal is calculated.

Abstract: An optical transmission system includes a transmitting device and a receiving device, wherein the transmitting device includes a modulating unit that changes a frequency of an optical signal, and the receiving device includes a filtering unit that passes an optical signal in a predetermined frequency band; a measuring unit that measures an intensity of an optical signal that passes through the filtering unit; a detecting unit that detects a center wavelength of the optical signal in accordance with an intensity of the optical signal that is measured when a frequency of the optical signal is changed in a state of a passed band that corresponds to the optical signal; and an output unit that outputs information that indicates the detected center wavelength to the transmitting device, wherein the transmitting device controls a wavelength of the optical signal in accordance with the information from the receiving device.

Abstract: The invention provides a method capable of reducing carbon atom content ratio and/or hydrogen atom content ratio relative to contents of silicon atoms and nitrogen atoms in a silicon nitride film formed by a plasma CVD method using an organic silane as a material, as well as improving film quality such as electrical properties. A silicon nitride film according to the invention is formed by forming a plasma of an organic silane and at least one additive gas selected from the group consisting of hydrogen and ammonia by a plasma CVD method. The silicon nitride film has a carbon atom content ratio of less than 0.8 assuming that a sum of a silicon atom content and a nitrogen atom content in the silicon nitride film is 1. The silicon nitride film has a hydrogen atom content ratio of less than 0.9 assuming that a sum of the silicon atom content and the nitrogen atom content in the silicon nitride film is 1.

Abstract: This invention relates to novel aminoglycoside antibiotics, which have potent antimicrobial activity against bacteria, which induce infectious diseases, particularly MRSA, and has no significant nephrotoxicity, and process for producing them. More particularly, the present invention relates to compounds represented by formula (Ia) or their pharmacologically acceptable salts or solvates, or their diastereomer mixtures, antimicrobial agents comprising them, and a process for producing them.

Abstract: An optical transmission system includes a transmitting device and a receiving device, wherein the transmitting device includes a modulating unit that changes a frequency of an optical signal, and the receiving device includes a filtering unit that passes an optical signal in a predetermined frequency band; a measuring unit that measures an intensity of an optical signal that passes through the filtering unit; a detecting unit that detects a center wavelength of the optical signal in accordance with an intensity of the optical signal that is measured when a frequency of the optical signal is changed in a state of a passed band that corresponds to the optical signal; and an output unit that outputs information that indicates the detected center wavelength to the transmitting device, wherein the transmitting device controls a wavelength of the optical signal in accordance with the information from the receiving device.

Abstract: This invention relates to novel aminoglycoside antibiotics, which have potent antimicrobial activity against bacteria, which induce infectious diseases, particularly MRSA, and has no significant nephrotoxicity, and process for producing them. More particularly, the present invention relates to compounds represented by formula (Ia) or their pharmacologically acceptable salts or solvates, or their diastereomer mixtures, antimicrobial agents comprising them, and a process for producing them.

Abstract: A plasma etching method forms a tapered recess portion in a wide-gap semiconductor substrate. The method includes forming on the substrate K an etching film having an etching speed higher than that of the substrate K, and forming a mask M having an opening on the high-speed etching film. The substrate K with the etching film and the mask is then placed on a platen and heated to a temperature equal to or higher than 200 ° C., a plasma is generated from an etching gas supplied into a processing chamber, and a bias potential is applied to the platen to etch substrate.

Abstract: A nitride film manufacturing apparatus forms a nitride film on a substrate provided in a chamber by a plasma CVD technique. Specifically, the nitride film manufacturing apparatus includes a controller for calculating a first period for applying first high-frequency power having a relatively high frequency and a second period for applying second high-frequency power having a relatively low frequency in order to obtain desired compressive stress or tensile stress of the nitride film, based on distribution of a refractive index of the nitride film and/or distribution of a deposition rate of the nitride film, the distribution falling within a predetermined numerical range and being obtained using the first high-frequency power and/or the second high-frequency power applied independently for forming the nitride film.

Abstract: An optimization unit in an optical receiver divides a symbol region out of a plurality of symbol regions into which signal points that specifies symbol information included in an optical signal are classified, into a plurality of division regions from the symbol center coordinate of the symbol region. Moreover, the optimization unit accumulates the signal points of the symbol information for every division region in the symbol region. Furthermore, based on the accumulated number of signal points for every division region, the optimization unit controls the average length of a phase estimation unit when the phase noise of the optical signal is calculated.

Abstract: The present invention relates to an etching method of capable of etching a silicon carbide substrate with a higher accuracy. A first etching step in which a silicon carbide substrate K is heated to a temperature equal to or higher than 200 ° C, SF6 gas is supplied into a processing chamber and plasma is generated from the SF6 gas, and a bias potential is applied to a platen, thereby isotropically etching the silicon carbide substrate K, and a second etching step in which the silicon carbide substrate K is heated to a temperature equal to or higher than 200 ° C., SF6 gas and O2 gas are supplied into the processing chamber and plasma is generated from the SF6 gas and the O2 gas, and a bias potential is applied to the platen on which the silicon carbide substrate K is placed, thereby etching the silicon carbide substrate K while forming a silicon oxide film as passivation film on the silicon carbide substrate K are alternately repeated.

Abstract: A nitride film manufacturing apparatus forms a nitride film on a substrate provided in a chamber by a plasma CVD technique. Specifically, the nitride film manufacturing apparatus includes a controller for calculating a first period for applying first high-frequency power having a relatively high frequency and a second period for applying second high-frequency power having a relatively low frequency in order to obtain desired compressive stress or tensile stress of the nitride film, based on distribution of a refractive index of the nitride film and/or distribution of a deposition rate of the nitride film, the distribution falling within a predetermined numerical range and being obtained using the first high-frequency power and/or the second high-frequency power applied independently for forming the nitride film.

Abstract: An object of the present invention is to provide a plasma etching method capable of forming a tapered recess portion in a wide-gap semiconductor substrate. As a solving means therefor, a high speed etching film E an etching speed of which is higher than that of a wide-gap semiconductor substrate K is formed on the wide-gap semiconductor substrate K, and a mask M having an opening is formed on the high speed etching film E. Thereafter, the wide-gap semiconductor substrate K having the high speed etching film E and the mask M formed thereon is placed on a platen and is heated to a temperature equal to or higher than 200° C., then a plasma is generated form an etching gas supplied into a processing chamber and a bias potential is applied to the platen, and thereby the wide-gap semiconductor substrate K is etched.

Abstract: The present invention relates to a plasma etching method with which a wide-gap semiconductor substrate can be etched with high accuracy. An inert gas is supplied into a processing chamber and plasma is generated from the inert gas, a bias potential is applied to a platen on which a wide-gap semiconductor substrate is placed, thereby making ions generated by the generation of plasma from the inert gas incident on the semiconductor substrate on the platen to thereby heat the semiconductor substrate. After the temperature of the semiconductor substrate reaches an etching temperature between 200° C. and 400° C., an etching gas is supplied into the processing chamber and plasma is generated from the etching gas and a bias potential is applied to the platen, thereby etching the semiconductor substrate while maintaining the temperature of the semiconductor substrate at the etching temperature.

Abstract: This invention relates to novel aminoglycoside antibiotics, which have potent antimicrobial activity against bacteria, which induce infectious diseases, particularly MRSA, and has no significant nephrotoxicity, and process for producing them. More particularly, the present invention relates to compounds represented by formula (Ia) or their pharmacologically acceptable salts or solvates, or their diastereomer mixtures, antimicrobial agents comprising them, and a process for producing them.

Abstract: A deposition method capable of forming an oxide film with a predetermined film thickness ratio using a deposition gas with which a small film thickness ratio is obtained and a deposition gas with which a large film thickness ratio is obtained. When forming an oxide film having a larger film thickness on the surface of a substrate than on the bottom surface of the hole so that the film thickness ratio of the oxide film formed on the surface of the substrate to the oxide film formed on the bottom surface of the hole becomes a predetermined ratio, plasma is generated from a gas mixture including tetraethoxysilane and oxygen to form an oxide film and then plasma is generated from a gas mixture including silane and nitrous oxide.

Abstract: This invention relates to novel aminoglycoside antibiotics, which have potent antimicrobial activity against bacteria, which induce infectious diseases, particularly MRSA, and has no significant nephrotoxicity, and process for producing them. More particularly, the present invention relates to compounds represented by formula (Ia) or their pharmacologically acceptable salts or solvates, or their diastereomer mixtures, antimicrobial agents comprising them, and a process for producing them.

Abstract: The present invention relates to a plasma etching method in which a special area for detecting an end point needs not to be set and an equipment therefor. At an etching step of forming SF6 gas into plasma to etch an etching ground on a Si film, the step is configured by two steps of: a large-amount supply step of supplying a large amount of SF6 gas; and a small-amount supply step of supplying a small amount of SF6 gas. An end-point detecting processor 34 measures an emission intensity of Si or SiFx in the plasma at the small-amount supply step, and determines that an etching end point is reached when the measured emission intensity becomes equal to or less than a previously set reference value.

Abstract: The present invention relates to an etching method of capable of etching a silicon carbide substrate with a higher accuracy. A first etching step in which a silicon carbide substrate K is heated to a temperature equal to or higher than 200° C., SF6 gas is supplied into a processing chamber and plasma is generated from the SF6 gas, and a bias potential is applied to a platen, thereby isotropically etching the silicon carbide substrate K, and a second etching step in which the silicon carbide substrate K is heated to a temperature equal to or higher than 200° C., SF6 gas and O2 gas are supplied into the processing chamber and plasma is generated from the SF6 gas and the O2 gas, and a bias potential is applied to the platen on which the silicon carbide substrate K is placed, thereby etching the silicon carbide substrate K while forming a silicon oxide film as passivation film on the silicon carbide substrate K are alternately repeated.

Abstract: A deposition method capable of forming an oxide film with a predetermined film thickness ratio using a deposition gas with which a small film thickness ratio is obtained and a deposition gas with which a large film thickness ratio is obtained. When forming an oxide film having a larger film thickness on the surface of a substrate than on the bottom surface of the hole so that the film thickness ratio of the oxide film formed on the surface of the substrate to the oxide film formed on the bottom surface of the hole becomes a predetermined ratio, plasma is generated from a gas mixture including tetraethoxysilane and oxygen to form an oxide film and then plasma is generated from a gas mixture including silane and nitrous oxide.

Abstract: This invention relates to novel aminoglycoside antibiotics, which have potent antimicrobial activity against bacteria, which induce infectious diseases, particularly MRSA, and has no significant nephrotoxicity, and process for producing them. More particularly, the present invention relates to compounds represented by formula (Ia) or their pharmacologically acceptable salts or solvates, or their diastereomer mixtures, antimicrobial agents comprising them, and a process for producing them.