Patents by Inventor Shoji Ikeda

Shoji Ikeda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11462253
    Abstract: Provided is a magnetoresistance effect element in which the magnetization direction of the recording layer is perpendicular to the film surface and which has a high thermal stability factor ?, and a magnetic memory. A recording layer having a configuration of first magnetic layer/first non-magnetic coupling layer/first magnetic insertion layer/second non-magnetic coupling layer/second magnetic layer is sandwiched between the first and second non-magnetic layers and stacked so that a magnetic coupling force is generated between the first magnetic layer and the second magnetic layer.
    Type: Grant
    Filed: December 28, 2017
    Date of Patent: October 4, 2022
    Assignee: TOHOKU UNIVERSITY
    Inventors: Koichi Nishioka, Tetsuo Endoh, Shoji Ikeda, Hiroaki Honjo, Hideo Sato, Hideo Ohno
  • Publication number: 20220273709
    Abstract: The present invention provides a pharmaceutical for preventing and/or treating non-ischemic cardiomyopathy, the pharmaceutical comprising dendritic cells obtained by a method comprising a step of culturing mononuclear cells in the presence of GM-CSF and IL-2 and a step of pulsing the cultured cells with ?-galactosylceramide.
    Type: Application
    Filed: July 10, 2020
    Publication date: September 1, 2022
    Applicant: KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION
    Inventors: Hiroyuki TSUTSUI, Tomomi IDE, Kisho OHTANI, Shoji MATSUSHIMA, Masataka IKEDA
  • Patent number: 11430498
    Abstract: The present invention provides a magnetoresistance effect element with a high read operation speed, a magnetic memory array, a magnetic memory device, and a write method for a magnetoresistance effect element.
    Type: Grant
    Filed: April 10, 2019
    Date of Patent: August 30, 2022
    Assignee: TOHOKU UNIVERSITY
    Inventors: Yoshiaki Saito, Shoji Ikeda, Tetsuo Endoh
  • Publication number: 20220267598
    Abstract: Provided is a polyamide fiber having excellent color developability, as well as a method for producing such a polyamide fiber, and a fiber structure. The polyamide fiber comprises a polyamide resin composition comprising a polyamide resin and an amino group-containing color enhancer, the polyamide fiber having terminal amino groups at a concentration of from 5.0 ?eq/g to 40.0 ?eq/g. Such a fiber can be produced by a production method at least comprising: melt-kneading a polyamide resin composition including a polyamide resin and an amino group-containing color enhancer to give a melt-kneaded product having a predetermined melt viscosity; and spinning the melt-kneaded product to give fibers.
    Type: Application
    Filed: May 12, 2022
    Publication date: August 25, 2022
    Applicant: KURARAY CO., LTD.
    Inventors: Daisuke OHGA, Hitoshi NAKATSUKA, Shinya KAWAKADO, Takayuki IKEDA, Shoji ONOGI, Kohei YAMASAKI
  • Patent number: 11417378
    Abstract: An integrated circuit device of the invention, includes: a first resistance variable memory element provided on a semiconductor substrate; a second resistance variable memory element provided on the semiconductor substrate; and a semiconductor circuit for controlling write and read of the first resistance variable memory element and the second resistance variable memory element, which is provided on the semiconductor substrate, in which the second resistance variable memory element has a write current that is smaller than a write current of the first resistance variable memory element, and the second resistance variable memory element is disposed farther from the semiconductor substrate than the first resistance variable memory element.
    Type: Grant
    Filed: March 12, 2019
    Date of Patent: August 16, 2022
    Assignee: TOHOKU UNIVERSITY
    Inventors: Tetsuo Endoh, Shoji Ikeda, Hiroki Koike
  • Publication number: 20220115440
    Abstract: Provided are a magnetic stacked film that is capable of improving a write efficiency, and a magnetic memory element and a magnetic memory using the magnetic stacked film. A magnetic stacked film 1 is a stacked film for a magnetic memory element 100, and includes: a heavy metal layer 2 that contains ? phase W1-xTax (0.00<x?0.30); and a recording layer 10 that includes a ferromagnetic layer 18 having a reversible magnetization direction and is adjacent to the heavy metal layer 2, in which a thickness of the heavy metal layer 2 is 2 nm or more and 8 nm or less.
    Type: Application
    Filed: October 30, 2019
    Publication date: April 14, 2022
    Inventors: Yoshiaki Saito, Shoji Ikeda, Hideo Sato, Tetsuo Endoh
  • Patent number: 11264565
    Abstract: An object of the invention is to provide a magnetoresistance effect element which includes a reference layer having three or more magnetic layers and which improves a thermal stability factor ? by decreasing a write error rate using an element structure that enables a wide margin to be secured between a current at which magnetization of the reference layer is reversed and a writing current Ic of a recording layer and by reducing an effect of a stray magnetic field from the reference layer. The magnetoresistance effect element includes: a first recording layer (A1); a first non-magnetic layer (11); and a first reference layer (B1), wherein the first reference layer (B1) including n-number of a plurality of magnetic layers (21, 22, . . . , 2n) and (n?1)?number of a plurality of non-magnetic insertion layers (31, 32, . . . 3(n?1)) adjacently sandwiched by each of the plurality of magnetic layers, where n?3.
    Type: Grant
    Filed: April 8, 2020
    Date of Patent: March 1, 2022
    Assignee: TOHOKU UNIVERSITY
    Inventors: Hiroaki Honjo, Tetsuo Endoh, Hideo Sato, Shoji Ikeda
  • Patent number: 11258006
    Abstract: Provided are a magnetic memory element in which an improvement in properties, such as an improvement in coercive properties or a reduction in a leak current, can be attained, a method for producing the same, and a magnetic memory. The magnetic memory element, includes: a columnar stack ST in which a reference layer FX having a fixed magnetization direction, a barrier layer TL including a non-magnetic body, and a recording layer FR having a reversible magnetization direction are stacked in this order; and an insulating film which contains nitrogen and is provided to cover a lateral surface of the columnar stack, in which in one or both of the recording layer and the barrier layer, a nitrogen concentration is 7×1030 atoms/m2 or more in a position of 2 nm inside from an outer circumferential end of the columnar stack.
    Type: Grant
    Filed: August 18, 2020
    Date of Patent: February 22, 2022
    Assignee: TOHOKU UNIVERSITY
    Inventors: Tetsuo Endoh, Masaaki Niwa, Hiroaki Honjo, Hideo Sato, Shoji Ikeda, Toshinari Watanabe
  • Publication number: 20220052111
    Abstract: Provided are a magnetic film, a magnetoresistance effect element and a magnetic memory which take advantages of atop-pinned structure and a bottom-pinned structure, maintain perpendicular magnetic anisotropy of magnetic layers in a fixing layer and allow strong pinning even in an annealing treatment after a protective film is formed. A fixing layer of a magnetic film has a basic configuration in which a first magnetic layer (21), a first non-magnetic layer (31), a first Pt layer (41), a second magnetic layer (22) disposed adjacent to each other in this order. The magnetization directions of the first magnetic layer (21) and the second magnetic layer (22) are both a direction perpendicular to the film surface, and an antiferromagnetic coupling is formed between the first magnetic layer (21) and the second magnetic layer (22).
    Type: Application
    Filed: August 11, 2021
    Publication date: February 17, 2022
    Inventors: Yoshiaki SAITO, Shoji IKEDA, Tetsuo ENDOH
  • Publication number: 20210399208
    Abstract: For implementation of a magnetoresistance effect element having a quadruple interface, a magnetoresistance effect element having a small resistance area product RA, a high magnetoresistance ratio, and a high effective magnetic anisotropy energy density Kefft* is provided. A magnetoresistance effect element includes a first reference layer (B1), a first junction layer (11), a first divided recording layer (2), a second junction layer (12), a second divided recording layer (3), and a third junction layer (13). The first divided recording layer (2) has a configuration having a high magnetoresistance ratio (MR ratio), and the second divided recording layer (3) has a configuration having a high effective magnetic anisotropy energy density (Kefft).
    Type: Application
    Filed: August 30, 2019
    Publication date: December 23, 2021
    Inventors: Koichi NISHIOKA, Tetsuo ENDOH, Shoji IKEDA, Hideo SATO, Hiroaki HONJO
  • Patent number: 11121310
    Abstract: A structure used in the formation of a spintronics element, the spintronics element to include a plurality of laminated layers, includes a substrate, a plurality of laminated layers formed on the substrate, an uppermost layer of the plurality of laminated layers being a non-magnetic layer containing oxygen, and a protection layer directly formed on the uppermost layer, the protection layer preventing alteration of characteristics of the uppermost layer while exposed in an atmosphere including H2O, a partial pressure of H2O in the atmosphere being equal to or larger than 10?4 Pa, no other layer being directly formed on the protection layer.
    Type: Grant
    Filed: July 16, 2019
    Date of Patent: September 14, 2021
    Assignee: TOHOKU UNIVERSITY
    Inventors: Soshi Sato, Masaaki Niwa, Hiroaki Honjo, Shoji Ikeda, Hideo Ohno, Tetsuo Endo
  • Patent number: 11081641
    Abstract: The present invention provides a magnetoresistance effect element which has a high thermal stability factor ? and in which a magnetization direction of a recording layer is a perpendicular direction with respect to a film surface, and a magnetic memory including the same. Magnetic layers of a recording layer of the magnetoresistance effect element are divided into at least two, and an Fe composition with respect to a sum total of atomic fractions of magnetic elements in each magnetic layer is changed before stacking the magnetic layers.
    Type: Grant
    Filed: January 18, 2017
    Date of Patent: August 3, 2021
    Assignee: TOHOKU UNIVERSITY
    Inventors: Hiroaki Honjo, Tetsuo Endoh, Shoji Ikeda, Hideo Sato, Hideo Ohno
  • Publication number: 20210233577
    Abstract: The present invention provides a magnetoresistance effect element with a high read operation speed, a magnetic memory array, a magnetic memory device, and a write method for a magnetoresistance effect element.
    Type: Application
    Filed: April 10, 2019
    Publication date: July 29, 2021
    Inventors: Yoshiaki Saito, Shoji Ikeda, Tetsuo Endoh
  • Patent number: 11062876
    Abstract: An evaluation method for an electronic device provided with an insulating film between a pair of electrode layers includes preparing a sample that has a tunnel barrier insulating film as the insulating film; irradiating the sample with electron beams from a plurality of angles to acquire a plurality of images; and performing image processing using the plurality of images to reconstruct a stereoscopic image and generate a cross-sectional image of the sample from the stereoscopic image.
    Type: Grant
    Filed: March 21, 2019
    Date of Patent: July 13, 2021
    Assignee: TOHOKU UNIVERSITY
    Inventors: Masaaki Niwa, Tetsuo Endoh, Shoji Ikeda, Kosuke Kimura
  • Publication number: 20210158849
    Abstract: Provided are a magnetoresistive element, a magnetic memory device, and a writing and reading method for a magnetic memory device, in which an aspect ratio of a junction portion can be decreased. A magnetoresistive element 1 of the invention, includes: a heavy metal layer 2 that is an epitaxial layer; and a junction portion 3 including a recording layer 31 that is provided on the heavy metal layer 2 and includes a ferromagnetic layer of an epitaxial layer magnetized in an in-plane direction, which is an epitaxial layer, a barrier layer 32 that is provided on the recording layer 31 and includes an insulating body, and a reference layer 33 that is provided on the barrier layer 32 and has magnetization fixed in the in-plane direction, in which the recording layer 31 is subjected to magnetization reversal by applying a write current to the heavy metal layer 2.
    Type: Application
    Filed: April 11, 2019
    Publication date: May 27, 2021
    Inventors: Yoshiaki Saito, Shoji Ikeda, Hideo Sato, Tetsuo Endoh
  • Publication number: 20210135094
    Abstract: Provided are a magnetoresistance effect element and a magnetic memory having a shape magnetic anisotropy and using a recording layer having an anti-parallel coupling. A first magnetic layer (3) and a second magnetic layer (5) of the magnetoresistance effect element include a ferromagnetic substance, have a magnetization direction variable to the direction perpendicular to a film surface and are magnetically coupled in an anti-parallel direction, and a junction size D (nm), which is a length of the longest straight line on an end face perpendicular to the thickness direction of the first magnetic layer (3) and the second magnetic layer (5), a film thickness t1 (nm) of the first magnetic layer (3), and a film thickness t2 (nm) of the second magnetic layer (5) satisfy relationships D<t1 and D?t1 or D?t1 and D<t2.
    Type: Application
    Filed: February 19, 2019
    Publication date: May 6, 2021
    Inventors: Hiroaki HONJO, Tetsuo ENDOH, Shoji IKEDA, Hideo SATO, Koichi NlSHIOKA
  • Publication number: 20210125654
    Abstract: A magnetic memory device includes: a memory cell array including a plurality of lines arranged parallel to one another at predetermined intervals and extending in one direction, and a plurality of memory cells connected to the plurality of lines and arranged in a matrix along an extending direction of the plurality of lines and along an arrangement direction of the plurality of lines, each of the plurality of memory cells including a magnetoresistance effect element; a selection circuit connected to the plurality of lines and configured to select non-adjacent lines that are not adjacent to one another, from the plurality of lines; and a controller connected to the selection circuit and configured to cause the selection circuit to select the non-adjacent lines and allow a write current to flow through the non-adjacent lines simultaneously in writing data on the memory cell array.
    Type: Application
    Filed: June 20, 2019
    Publication date: April 29, 2021
    Inventors: Tetsuo Endoh, Yoshiaki Saito, Shoji Ikeda
  • Publication number: 20210110857
    Abstract: An integrated circuit device of the invention, includes: a first resistance variable memory element provided on a semiconductor substrate; a second resistance variable memory element provided on the semiconductor substrate; and a semiconductor circuit for controlling write and read of the first resistance variable memory element and the second resistance variable memory element, which is provided on the semiconductor substrate, in which the second resistance variable memory element has a write current that is smaller than a write current of the first resistance variable memory element, and the second resistance variable memory element is disposed farther from the semiconductor substrate than the first resistance variable memory element.
    Type: Application
    Filed: March 12, 2019
    Publication date: April 15, 2021
    Inventors: Tetsuo Endoh, Shoji Ikeda, Hiroki Koike
  • Publication number: 20210091304
    Abstract: [Problem] Provided are a magnetic memory element in which an improvement in properties, such as an improvement in coercive properties or a reduction in a leak current, can be attained, a method for producing the same, and a magnetic memory. [Means for Resolution] The magnetic memory element, includes: a columnar stack ST in which a reference layer FX having a fixed magnetization direction, a barrier layer TL including a non-magnetic body, and a recording layer FR having a reversible magnetization direction are stacked in this order; and an insulating film (a second insulating film 20) which contains nitrogen and is provided to cover a lateral surface of the columnar stack, in which in one or both of the recording layer and the barrier layer, a nitrogen concentration is 7×1030 atoms/m2 or more in a position of 2 nm inside from an outer circumferential end of the columnar stack.
    Type: Application
    Filed: August 18, 2020
    Publication date: March 25, 2021
    Inventors: Tetsuo Endoh, Masaaki Niwa, Hiroaki Honjo, Hideo Sato, Shoji Ikeda, Toshinari Watanabe
  • Publication number: 20210074910
    Abstract: A perpendicular magnetization type three-terminal SOT-MRAM that does not need an external magnetic field is provided. A magnetoresistance effect element where a first magnetic layer/nonmagnetic spacer layer/recording layer are disposed in order, and the first magnetic layer and the nonmagnetic spacer layer are provided to a channel layer.
    Type: Application
    Filed: February 13, 2019
    Publication date: March 11, 2021
    Inventors: Yoshiaki SAITO, Shoji IKEDA, Hideo SATO, Tetsuo ENDOH